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Diodes Incorporated DMN2024UVT-13
- Part No.:
- DMN2024UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2024UVT-13.pdf
- Description:
- MOSFET 2N-CH 20V 7A TSOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,501
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Product details
Overview
DMN2024UVT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V VDSS, 24 mΩ RDS(ON) @ 4.5V VGS, and 7A continuous drain current at +25°C. It delivers low conduction loss and fast switching for compact DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMN2024UVT-13 datasheet, DMN2024UVT-13 pinout, DMN2024UVT-13 application, or DMN2024UVT-13 equivalent, key selection criteria include gate threshold voltage (0.5–0.9 V), junction-to-ambient thermal resistance (78 °C/W on 1"×1" 2oz copper), and ESD-protected gate with ±10 V VGSS rating.
Technical Context
This MOSFET uses a trench-gate process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 7.1 nC) and fast switching (tr = 140 ns, tf = 434 ns). Its 647 pF Ciss and 38 pF Crss support stable operation in synchronous buck topologies.
The device integrates a body diode with VSD = 0.9–1.2 V at 5 A and QRR = 149 nC, enabling efficient freewheeling in high-frequency power stages. Thermal performance is validated under JEDEC-standard PCB layouts with RθJA = 78 °C/W (high-copper) and 124 °C/W (standard FR-4).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(ON) | 24 mΩ @ 4.5 V VGS - Enables <170 mW conduction loss at 7 A, critical for thermally constrained space |
| ID (continuous) | 7 A @ +25°C - Supports up to 12 W load in 1"×1" 2oz copper layout before thermal derating |
| Qg | 7.1 nC - Low gate drive energy reduces controller IC loading and enables 1–2 MHz switching |
| Crss | 38 pF - Minimizes Miller effect, improving noise immunity and turn-off robustness in hard-switched apps |
| TJ range | −55 to +150 °C - Qualified for industrial and automotive ambient environments without derating |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), RoHS-compliant matte tin finish, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; ESD-protected; requires ≤±10 V drive; threshold 0.5–0.9 V enables 1.8 V logic compatibility |
| 2 (S) | Source | Reference node for gate drive; common return path for load current; tied to PCB ground plane for thermal conduction |
| 3 (D) | Drain | Main power output node; connected to inductor or load; internal bonding optimized for low-inductance current path |
| 4 (S) | Source (tie bar) | Second source connection; electrically identical to Pin 2; enhances thermal dissipation and current sharing |
| 5 (D) | Drain (tie bar) | Second drain connection; electrically identical to Pin 3; reduces package parasitic inductance in high-dI/dt paths |
| 6 (G) | Gate (tie bar) | Second gate connection; electrically identical to Pin 1; improves gate drive impedance matching and signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 28 mΩ @ 2.5 V VGS - supports direct drive from 2.5 V microcontrollers without level-shifting |
| Fast switching with low Qgd | 0.7 nC gate-drain charge - limits Miller plateau duration, reducing overlap loss in synchronous rectification |
| ESD-protected gate | HBM rating ≥2 kV - eliminates need for external gate protection in standard assembly environments |
| Green compound packaging | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets IPC-1752A Tier 1 reporting requirements |
| Thermal efficiency | RθJA = 78 °C/W on 1"×1" 2oz copper - allows 1.6 W continuous dissipation without heatsink in compact designs |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
Use Scenario: Driving white LED strings in LCD displays using PWM dimming at 1–20 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; operates in hard-switched mode with 100 ns–1 µs transition times. Use Value: 24 mΩ RDS(ON) minimizes I²R loss during PWM on-time, preserving >92% efficiency at 500 mA per string. |
Use Scenario: High-efficiency 5 V → 1.2 V point-of-load conversion for FPGA core supplies. IC Role / Device Role / Timing Role: Synchronous rectifier in 1.5 MHz buck regulator; body diode conducts during dead time. Use Value: Low QRR (149 nC) and fast trr (245 ns) reduce reverse recovery loss and EMI generation. |
| USB Power Delivery Switch | Load Switch for Industrial Sensor Node |
Use Scenario: Enabling/disabling 5 V/3 A USB-C power path with inrush control. IC Role / Device Role / Timing Role: Single-pole, single-throw load switch; gate driven by dedicated enable logic. Use Value: 0.9 V typical VGS(TH) ensures reliable turn-on with 3.3 V GPIO; low leakage (<1 µA) prevents standby drain. |
Use Scenario: Isolating 3.3 V sensor rail in battery-powered IIoT node during sleep cycles. IC Role / Device Role / Timing Role: High-side power switch; controlled via low-power MCU GPIO with soft-start RC network. Use Value: 22 mΩ RDS(ON) @ 2.5 V VGS enables direct 2.5 V logic drive while limiting dropout to <110 mV at 5 mA load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2026UVT-13 | RDS(ON) = 26 mΩ @ 4.5 V; higher Qg (8.2 nC); same TSOT26 package | Marginally lower efficiency in high-current DC-DC; slightly slower switching | Select when tighter RDS(ON) tolerance (±15%) is required over absolute minimum value |
| AO3400A | RDS(ON) = 28 mΩ @ 4.5 V; no ESD protection; RθJA = 150 °C/W (FR-4) | Requires external gate ESD clamp; unsuitable for uncontrolled assembly environments | Choose only for cost-sensitive consumer apps where gate protection and thermal specs are relaxed |
Compared with DMN2024UVT-13, DMN2026UVT-13 trades 8% higher RDS(ON) for improved production consistency, while AO3400A lacks integrated ESD protection and delivers 92% higher thermal resistance-making DMN2024UVT-13 optimal for reliability-critical, space-constrained industrial power switches.
Availability
DMN2024UVT-13 is available at Aetrix Electronics and suitable for LED backlighting, synchronous buck converters, and industrial load switching requiring stable component supply across multi-year production cycles.
Supply support for DMN2024UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ISO/TS 16949-certified facilities.
This MOSFET belongs to Diodes' "Ultra-Low RDS(ON) TrenchMOS" product line, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained portable and industrial systems.
FAQ
What is the maximum safe operating temperature for DMN2024UVT-13?
The junction temperature must not exceed +150 °C under any condition. With RθJA = 78 °C/W on a 1"×1" 2oz copper board, the device sustains 7 A continuous current only if ambient temperature stays below +60 °C. Derating curves in Figure 5 confirm 5 A max at +85 °C ambient.
Can DMN2024UVT-13 be driven directly by a 1.8 V GPIO?
Yes-its VGS(TH) min is 0.5 V, and RDS(ON) = 34 mΩ @ 1.8 V VGS (ID = 3.5 A). This enables direct interface with 1.8 V logic without level shifters, though conduction loss rises ~42% versus 4.5 V drive.
Does DMN2024UVT-13 require external gate resistors in typical applications?
A 6 Ω gate resistor is recommended per Figure 11 test conditions to dampen ringing and limit peak gate current. Omitting it risks overshoot exceeding ±10 V VGSS, especially with fast drivers and long PCB traces (>2 cm).
Is this part qualified for automotive use per AEC-Q101?
No-DMN2024UVT-13 is not AEC-Q101 qualified. Diodes offers the pin-compatible DMN2024LVT-13 variant for automotive applications, which undergoes extended stress testing and is manufactured in IATF 16949-certified facilities.
DMN2024UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 647pF @ 10V
- Power - Max:
- 1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
DMN2024UVT-13 FAQ
1.How can I place an order for DMN2024UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2024UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2024UVT-13 reliable?
The price and inventory of DMN2024UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2024UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN2024UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2024UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2024UVT-13?
DMN2024UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2024UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2024UVT-13?
For technical support, including DMN2024UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2024UVT-13 requirements.
6.How does Aetrix verify that DMN2024UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN2024UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2024UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN2024UVT-13?
All DMN2024UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2024UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2024UVT-13 part is unused and in its original packaging.
Return procedure for DMN2024UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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