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Diodes Incorporated DMN2024UVT-7

Part No.:
DMN2024UVT-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMN2024UVT-7.pdf
Description:
MOSFET 2N-CH 20V 7A TSOT23-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,743

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Product details

Overview

DMN2024UVT from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power switching in compact DC-DC converters and LED backlighting circuits, featuring 20V VDSS, 24 mΩ RDS(ON) @ 4.5V VGS, 7A ID at +25°C, and TSOT26 package with ESD-protected gate.

For engineers reviewing the DMN2024UVT datasheet, DMN2024UVT pinout, DMN2024UVT application, or DMN2024UVT equivalent, this device supports low-voltage, high-current load switching where fast turn-on (98 ns tD(ON)), low gate charge (7.1 nC), and thermal robustness (TJ = –55°C to +150°C) are critical.

Technical Context

This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining controlled Ciss (647 pF) and Crss (38 pF), enabling efficient operation in synchronous buck topologies up to 1 MHz. Its 0.5–0.9 V gate threshold ensures reliable turn-on with 1.8V–4.5V logic-level drive.

The device integrates a body diode with 0.9–1.2 V forward voltage and 245 ns reverse recovery time, supporting continuous conduction mode (CCM) and discontinuous conduction mode (DCM) in boost and flyback configurations without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V - Maximum drain-source blocking voltage compatible with 12V/15V input rails and USB PD auxiliary power paths.
RDS(ON) 24 mΩ @ 4.5V VGS - Enables ≤150 mW conduction loss at 6.5A, suitable for thermally constrained PCB layouts.
ID 7 A @ +25°C - Continuous current rating sufficient for single-phase point-of-load (POL) regulators delivering up to 10W.
Qg 7.1 nC - Low total gate charge reduces driver power demand and enables use with low-power microcontroller GPIOs.
tD(ON)/tF 98 ns / 434 ns - Fast switching minimizes overlap loss in high-frequency PWM control (≥500 kHz).
TJ Range –55°C to +150°C - Qualified for industrial and extended-temperature automotive cabin applications.

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin small-outline transistor with exposed drain pad for enhanced thermal dissipation; 0.013 g mass; moisture sensitivity level 1 per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal accepting 1.8–4.5V logic-level drive; ESD-protected (HBM >2 kV) to prevent latch-up during board handling.
2 (S) Source Reference node for gate drive and current return path; tied to ground or low-side switch node in buck topology.
3 (D) Drain Main current-carrying terminal connected to input rail or inductor node; electrically bonded to exposed pad for thermal conduction.
4 (S) Source Second source connection-internally paralleled with Pin 2 to reduce source inductance and improve switching stability.
5 (D) Drain Second drain connection-internally paralleled with Pin 3 to lower RDS(ON) and enhance current sharing under high dI/dt.
6 (D) Drain Third drain connection-bonded to exposed thermal pad; primary thermal path to PCB copper pour for RθJA = 78°C/W (2 oz Cu).

Key Features

Feature Design Value
Low RDS(ON) at 2.5V VGS 28 mΩ - Enables stable operation with battery-powered controllers or low-VCC microcontrollers (e.g., 2.8V LDO outputs).
Low Ciss and Crss 647 pF / 38 pF - Reduces Miller effect-induced shoot-through risk and eases gate driver selection in half-bridge designs.
Fast tR/tF 140 ns / 434 ns - Supports high-duty-cycle, high-frequency switching without excessive switching loss penalties.
ESD-protected gate HBM >2 kV - Eliminates need for external gate protection components in automated assembly environments.
Green compound & RoHS3 Br+Cl <1500 ppm, Sb <1000 ppm - Complies with IPC-1752a reporting requirements and EU environmental directives.

Applications

LED Backlighting USB-C Power Delivery Switch

Use Scenario: Driving parallel white LED strings in thin-profile monitors and tablets using constant-current buck drivers.

IC Role / Device Role: Low-side synchronous rectifier and current-sink switch controlling LED cathode current.

Use Value: 24 mΩ RDS(ON) limits thermal rise to <15°C at 5A, enabling single-layer PCB layout without heatsinks.

Use Scenario: Load switching between USB-C VBUS and system input in portable power banks with dual-role port support.

IC Role / Device Role: High-side power path switch managing 5–20V input routing with reverse-blocking capability.

Use Value: 20V VDSS and 7A ID accommodate full USB PD 3.0 range; fast tD(OFF) (1024 ns) ensures clean hot-plug sequencing.

Industrial Sensor Node PMIC Automotive Cabin Lighting

Use Scenario: Power gating of RF transceivers and ADC subsystems in battery-operated IIoT edge nodes.

IC Role / Device Role: Load switch isolating downstream circuitry during sleep mode to reduce quiescent current leakage.

Use Value: 1 µA IDSS and ±10 µA IGSS minimize standby power loss; –55°C to +150°C rating supports unheated outdoor enclosures.

Use Scenario: Dimmable ambient lighting control in vehicle door panels and center consoles using PWM-driven LED arrays.

IC Role / Device Role: Low-side PWM modulator interfacing directly with 3.3V microcontroller timers.

Use Value: 0.5–0.9 V VGS(TH) ensures full enhancement at 3.3V logic; 28 mΩ @ 2.5V VGS maintains brightness linearity down to 10% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2024LVT-7 Same die, but in SOT-23-6 package with higher RθJA (124°C/W) and no exposed drain pad. Limited to ≤3.5A continuous due to thermal derating; unsuitable for >5W POL converters. Select when board space permits larger footprint and thermal budget allows higher junction temperature rise.
AO3414 20V VDSS, 30 mΩ RDS(ON) @ 4.5V, but higher Qg (12 nC) and slower tF (600 ns). Higher switching loss in >1 MHz applications; requires stronger gate driver for same edge rates. Prefer for cost-sensitive, lower-frequency (<300 kHz) applications where gate drive strength is not constrained.

Compared with DMN2024LVT-7 and AO3414, DMN2024UVT delivers superior thermal performance via its TSOT26 exposed-pad construction and lowest gate charge in its class-enabling smaller magnetics, reduced driver complexity, and higher efficiency in space-constrained 1–10W DC-DC stages.

Availability

DMN2024UVT is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery switches, and industrial sensor node PMICs requiring stable component supply across production lifecycles.

Supply support for DMN2024UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

DMN2024UVT belongs to Diodes' logic-level MOSFET product line engineered for energy-efficient, space-constrained DC-DC conversion and load switching in portable and automotive electronics.

FAQ

Is DMN2024UVT suitable for automotive AEC-Q101 qualification?

No-DMN2024UVT is not AEC-Q101 qualified. Diodes offers AEC-Q101 variants under different part numbers (e.g., DMN2024UVTQ) with PPAP documentation, IATF 16949 manufacturing, and extended reliability testing. This standard version is rated for industrial temperature range only.

What is the maximum recommended PCB copper area for optimal thermal performance?

For RθJA = 78°C/W, Diodes specifies a 1" × 1" FR-4 board with 2 oz. copper on one side and high-coverage layout matching the TSOT26 pad dimensions (E1 = 1.6 mm, D = 2.9 mm). Minimum recommended copper area is 25 mm² connected directly to the exposed drain pad.

Can DMN2024UVT be used in a high-side configuration?

Yes-but only with appropriate gate drive. As an N-channel device, it requires a gate voltage ≥ VDS + VGS(TH). For 20V VDSS, a bootstrap or charge-pump driver capable of ≥22V gate swing is necessary to ensure full enhancement and avoid linear-mode operation.

Does the body diode support synchronous rectification in buck converters?

No-the internal body diode has 245 ns reverse recovery time and 149 nC QRR, making it unsuitable for synchronous rectification above ~200 kHz. Use external Schottky or dedicated synchronous MOSFETs for high-frequency CCM operation.

DMN2024UVT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual) Common Drain
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Rds On (Max) @ Id, Vgs:
24mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
647pF @ 10V
Power - Max:
1W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-23-6

DMN2024UVT-7 FAQ

1.How can I place an order for DMN2024UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2024UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2024UVT-7 reliable?

The price and inventory of DMN2024UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2024UVT-7 is usually 5 days.

3.What payment methods are accepted for DMN2024UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2024UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2024UVT-7?

DMN2024UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2024UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2024UVT-7?

For technical support, including DMN2024UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2024UVT-7 requirements.

6.How does Aetrix verify that DMN2024UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN2024UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2024UVT-7 meets industry standards.

7.What is the process for return or replacement of DMN2024UVT-7?

All DMN2024UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2024UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2024UVT-7 part is unused and in its original packaging.

Return procedure for DMN2024UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2024UVT-7 Tags

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