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Diodes Incorporated DMN2025UFDB-13
- Part No.:
- DMN2025UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2025UFDB-13.pdf
- Description:
- MOSFET 2N-CH 20V 6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,681
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Product details
Overview
DMN2025UFDB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 20V VDSS, 25 mΩ RDS(ON) @ 4.5V VGS, and 6.0A ID at TA = +25°C. It integrates two matched low-RDS(ON) switches with ESD-protected gates and fast switching for compact DC-DC converter power stages.
For engineers reviewing the DMN2025UFDB-13 datasheet, DMN2025UFDB-13 pinout, DMN2025UFDB-13 application, or DMN2025UFDB-13 equivalent, key selection criteria include dual-channel thermal coupling in ultra-thin 0.6mm profile, gate threshold voltage range (0.5–1.0V), normalized RDS(ON) stability up to 150°C, and compatibility with 2.5V/4.5V logic-level drive in battery management systems.
Technical Context
This dual MOSFET uses planar trench-gate technology to achieve low on-resistance while maintaining <17.6 ns turn-off delay and 77 pF Crss at 10V VDS. Its symmetric internal structure supports synchronous rectification or half-bridge configurations without external balancing components.
The device features integrated gate protection diodes per channel and operates across –55°C to +150°C junction temperature, with RθJA of 98°C/W under enhanced PCB copper layout-enabling high-density power conversion where thermal resistance and footprint are constrained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 1-cell Li-ion and USB PD 5V rail applications |
| RDS(ON) @ 4.5V | 25 mΩ max - Enables ≤150 mW conduction loss at 6A in high-efficiency buck converters |
| ID (TA=25°C) | 6.0 A - Continuous current rating with 1.4 W power dissipation on 1-inch² copper pad |
| VGS(TH) | 0.5–1.0 V - Ensures reliable turn-on with 1.8V/2.5V microcontroller GPIOs without level-shifting |
| Ciss | 486 pF - Low input capacitance reduces gate drive power and improves PWM efficiency above 1 MHz |
| tF | 9.3 ns - Fast fall time minimizes switching transition losses in synchronous rectifiers |
| Qg @ 4.5V | 5.9 nC - Low total gate charge enables direct drive from low-power MCU outputs |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0 mm × 2.0 mm × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Q1 | High-side switch node for first MOSFET; connects to input rail in buck topology |
| S1 | Source of Q1 | Return path for Q1; tied to common source node or SW node in half-bridge |
| G1 | Gate of Q1 | Logic-level control input; ESD-protected, compatible with 1.8V CMOS drivers |
| D2 | Drain of Q2 | Second switch node; used for synchronous rectification or dual-phase output |
| S2 | Source of Q2 | Shared source with S1 in common-source configuration; electrically isolated in dual-switch mode |
| G2 | Gate of Q2 | Independent gate control; allows asymmetric PWM or phase-shifted operation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.6 mm) | Enables integration into space-constrained portable electronics such as Bluetooth earbuds and wearables |
| PCB footprint: 4 mm² | Reduces board area by >40% vs. SO-8 dual MOSFETs, supporting miniaturized power modules |
| ESD-protected gate (HBM >2 kV) | Eliminates need for external gate protection in automated assembly lines and field-replaceable modules |
| Lead-free & halogen-free | Complies with IPC-J-STD-020 Level 1 and RoHS 3 (2015/863/EU) for global environmental compliance |
| Thermal resistance RθJC = 22°C/W | Direct die-to-pad conduction path enables >1.2 W power handling with minimal heatsinking |
Applications
| Battery Protection Circuit | USB-C Power Delivery Module |
|---|---|
Use Scenario: Dual-MOSFET reverse-polarity and overcurrent protection in single-cell Li-ion packs. IC Role / Device Role / Timing Role: Back-to-back configured N-ch switches controlling bidirectional current flow with <100 ns fault response. Use Value: 25 mΩ RDS(ON) limits voltage drop to <150 mV at 6A, preserving battery runtime and enabling accurate coulomb counting. | Use Scenario: Synchronous rectification stage in 5V/3A USB-C buck converter for portable chargers. IC Role / Device Role / Timing Role: Low-side switch paired with external high-side FET; driven by dedicated gate controller. Use Value: 5.9 nC Qg and 9.3 ns tF support 2 MHz switching with <3% duty-cycle dead-time overhead. |
| Wireless Charging Transmitter | Industrial Sensor Node Power Supply |
Use Scenario: Half-bridge inverter driving 110–205 kHz resonant tank for Qi-compliant transmitters. IC Role / Device Role / Timing Role: Complementary switching pair operating in phase-shifted PWM mode with shared source node. Use Value: Matched RDS(ON) tracking (<±5% over temperature) ensures balanced conduction loss and thermal stress distribution. | Use Scenario: Step-down regulator supplying 3.3V to ultra-low-power MCU and BLE radio in battery-operated sensors. IC Role / Device Role / Timing Role: Integrated power switch in discrete buck converter with 2.5V logic-compatible gate drive. Use Value: 0.5–1.0V VGS(TH) guarantees turn-on with 1.8V I/O rails, eliminating external level shifters and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2026UFDB-13 | RDS(ON) = 28 mΩ @ 4.5V; higher threshold (0.6–1.2V); same package | Slightly lower efficiency at 6A; better noise immunity in noisy industrial environments | Select when gate drive margin >0.5V is available and thermal headroom is limited |
| SI2302DS-T1-GE3 | Single-channel, 20V, 35 mΩ @ 4.5V; SOT-23 package; no ESD protection | Requires two devices and external gate protection; larger footprint (5.5 mm²) | Choose only if dual-channel integration is unnecessary and cost-per-switch is prioritized |
Compared with DMN2025UFDB-13, DMN2026UFDB-13 trades 12% higher RDS(ON) for improved VGS(TH) consistency, while SI2302DS-T1-GE3 sacrifices integration and reliability for legacy footprint compatibility-making the DMN2025UFDB-13 optimal for new designs demanding density, efficiency, and robustness.
Availability
DMN2025UFDB-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and wireless charging transmitters requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for DMN2025UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN2025UFDB-13 belongs to Diodes' U-DFN PowerMOS family, engineered specifically for high-density, high-efficiency DC-DC conversion in portable and battery-powered equipment where thermal performance and footprint are critical.
FAQ
What is the maximum continuous drain current for DMN2025UFDB-13 at 70°C ambient?
The maximum continuous drain current is 4.8 A at TA = +70°C with 1-inch² copper pad (PD = 1.4 W, RθJA = 98°C/W). This derating reflects thermal limits under typical PCB layout conditions-not absolute silicon capability-and assumes no additional heatsinking.
Does DMN2025UFDB-13 support 1.8V logic-level gate drive?
Yes. With VGS(TH) specified from 0.5 V to 1.0 V and RDS(ON) tested down to 2.5 V VGS, the device fully turns on using 1.8 V CMOS outputs. At 1.8 V, RDS(ON) rises to ~42 mΩ (typical), sufficient for ≤3 A loads in low-duty-cycle applications.
How is thermal performance affected by PCB pad design?
Thermal resistance drops from 170°C/W (minimum pad) to 98°C/W (1-inch² copper), directly impacting safe operating current. The exposed thermal pad must be soldered to ≥100 mm² internal or external copper plane; insufficient pad area causes premature thermal shutdown at <4 A continuous load.
Can DMN2025UFDB-13 be used in automotive applications?
Standard DMN2025UFDB-13 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN2025UFDBQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. For automotive use, contact Diodes' automotive sales team to obtain qualified part numbers and test reports.
DMN2025UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 486pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN2025UFDB-13 FAQ
1.How can I place an order for DMN2025UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2025UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2025UFDB-13 reliable?
The price and inventory of DMN2025UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2025UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMN2025UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2025UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2025UFDB-13?
DMN2025UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2025UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2025UFDB-13?
For technical support, including DMN2025UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2025UFDB-13 requirements.
6.How does Aetrix verify that DMN2025UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMN2025UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2025UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMN2025UFDB-13?
All DMN2025UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2025UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2025UFDB-13 part is unused and in its original packaging.
Return procedure for DMN2025UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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