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Diodes Incorporated DMN2025UFDB-7
- Part No.:
- DMN2025UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2025UFDB-7.pdf
- Description:
- MOSFET 2N-CH 20V 6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,160
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Product details
Overview
DMN2025UFDB-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 20V VDSS, 25 mΩ RDS(ON) @ 4.5V VGS, and 6.0A continuous drain current at +25°C. It integrates two matched low-RDS(ON) switches with ESD-protected gates and fast switching for compact DC-DC converter power stages.
For engineers reviewing the DMN2025UFDB-7 datasheet, DMN2025UFDB-7 pinout, DMN2025UFDB-7 application, or DMN2025UFDB-7 equivalent, key selection criteria include gate threshold voltage (0.5–1.0V), thermal resistance (98 °C/W on 1-inch copper), dual-channel layout compatibility, and 0.6mm profile for ultra-thin battery management PCBs.
Technical Context
This dual MOSFET uses planar silicon process technology to achieve symmetric channel matching and low gate charge (Qg = 5.9 nC @ 4.5V). Its gate threshold voltage range (0.5–1.0V) enables direct drive from 1.8V/2.5V logic, while the integrated body diodes support synchronous rectification in buck converters.
The device features a thermally enhanced U-DFN2020-6 (Type B) package with NiPdAu-plated terminals and 22 °C/W junction-to-case thermal resistance. Its 486 pF input capacitance and 77 pF reverse transfer capacitance are optimized for high-frequency switching up to 1 MHz in portable power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for battery-input DC-DC stages up to 3S Li-ion (12.6 V max). |
| RDS(ON) | 25 mΩ @ 4.5V VGS - Enables <150 mW conduction loss at 6 A in high-efficiency 5 V output converters. |
| ID (max) | 6.0 A @ +25°C - Supports peak load currents in USB-C PD sink circuits and PMIC load switches. |
| Qg | 5.9 nC @ 4.5V - Reduces gate drive power and allows use of low-current drivers in space-constrained designs. |
| tR/tF | 5.4 ns / 9.3 ns - Minimizes switching transition losses in 500 kHz–1 MHz buck regulators. |
| RθJA | 98 °C/W - Achievable with 1-inch² copper pour; enables 1.4 W dissipation without forced air in handheld devices. |
| VGS(TH) | 0.5–1.0 V - Ensures full enhancement with 1.8V GPIO or low-voltage microcontroller outputs. |
Pinout & Package
U-DFN2020-6 (Type B) is a 2.0 mm × 2.0 mm × 0.6 mm leadless package with exposed thermal pad and six terminals on 0.65 mm pitch. Pin 1 identifier is marked by chamfered corner per JEDEC MO-252.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Q1 | High-side switch node for first MOSFET channel; connects to input rail in half-bridge configuration. |
| S1 | Source of Q1 | Return path for Q1; tied to SW node or ground depending on topology (e.g., buck low-side). |
| G1 | Gate of Q1 | Control input for Q1; requires <1.0 V threshold margin for reliable turn-on with 1.8V logic. |
| D2 | Drain of Q2 | Second channel drain; used for dual-phase interleaving or independent load switching. |
| S2 | Source of Q2 | Independent source terminal; enables floating-source configurations like high-side drivers. |
| G2 | Gate of Q2 | Separate gate control; supports asynchronous or synchronized dual-channel operation. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into <1.0 mm total PCB thickness designs for wearables and ultra-slim tablets. |
| 4 mm² footprint | Reduces board area by >40% vs. SO-8 dual MOSFETs; critical for multi-rail PMIC layouts. |
| ESD-protected gate | HBM rating ≥2 kV ensures robustness during SMT assembly and field handling without extra protection circuitry. |
| Low RDS(ON) temperature coefficient | RDS(ON) increases only 1.8× from –55°C to +150°C at 4.5V, improving thermal stability in automotive cabin modules. |
| Halogen- and antimony-free | Meets IPC-1752A Class 1 reporting requirements and EU Directive 2015/863/EU for green electronics compliance. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration in lithium-ion battery packs to block reverse current and enable overvoltage/overcurrent cutoff. IC Role / Device Role / Timing Role: Dual N-channel switch providing bidirectional blocking with matched RDS(ON) and fast fault response (<100 ns propagation delay via external comparator). Use Value: Eliminates need for discrete Schottky diodes or P-channel high-side switches, reducing BOM count and forward voltage drop by >300 mV. | Use Scenario: Input power path management in portable USB-C PD receivers, supporting 5–20 V input with dynamic load switching. IC Role / Device Role / Timing Role: Dual-channel load switch controlling VBUS routing and CC line power negotiation sequencing. Use Value: 25 mΩ RDS(ON) limits voltage drop to <150 mV at 6 A, preserving PD negotiation margins and enabling 100 W operation within thermal limits. |
| Multi-Phase Buck Converter | Smartphone PMIC Power Stage |
Use Scenario: High-frequency (1–2 MHz) dual-phase buck regulator for SoC core voltage (VDD_CPU), where phase interleaving reduces output ripple. IC Role / Device Role / Timing Role: Two synchronized low-side switches sharing one inductor; gate timing controlled by dedicated PWM controller. Use Value: 5.9 nC Qg and 9.3 ns tF minimize dead-time losses, achieving >94% efficiency at 3 A load with 5 V input. | Use Scenario: Compact power stage for display bias, camera sensor, or RF front-end rails in smartphones with strict height constraints. IC Role / Device Role / Timing Role: Dual independent load switch enabling rapid rail enable/disable under PMIC command with minimal leakage (<1 µA). Use Value: 0.6 mm height and 4 mm² footprint allow placement beneath OLED displays, freeing top-side real estate for antenna modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2026UFDB-7 | RDS(ON) = 22 mΩ @ 4.5V (lower), but higher Qg = 7.2 nC and same 20V rating. | Better conduction loss at high current, but increased gate drive demand limits use with weak MCU GPIOs. | Select when efficiency > gate drive simplicity; verify driver capability for 7.2 nC charge. |
| SI2302DDS-T1-GE3 | Single-channel, 20V, 2.6A, 0.095 Ω RDS(ON); no dual configuration or ESD protection. | Requires two devices and external ESD diodes to match functionality; larger footprint and higher assembly cost. | Only consider if dual-channel integration is unnecessary and board area is not constrained. |
Compared with DMN2025UFDB-7, DMN2026UFDB-7 improves conduction loss but raises gate drive burden, while SI2302DDS-T1-GE3 sacrifices integration and reliability for lower unit cost-making DMN2025UFDB-7 optimal for space- and performance-critical dual-switch applications.
Availability
DMN2025UFDB-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery sinks, and multi-phase buck converters requiring stable component supply across consumer, industrial, and automotive-qualified production programs.
Supply support for DMN2025UFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMN2025UFDB-7 belongs to Diodes' U-DFN power MOSFET product line, engineered specifically for ultra-compact, high-efficiency power conversion in portable and battery-powered systems where thermal density and board area are limiting factors.
FAQ
What is the maximum safe operating junction temperature for DMN2025UFDB-7?
The absolute maximum junction temperature is +150°C, validated across all operating conditions per datasheet Section 3. Thermal derating begins at +25°C ambient using RθJA = 98 °C/W (with 1-inch² copper). At 6.0 A continuous current and 4.5V gate drive, junction temperature rise is ~147°C above ambient, requiring careful thermal design to stay within limit.
Does DMN2025UFDB-7 support synchronous rectification in buck converters?
Yes-its matched dual N-channel structure, low RDS(ON) (25 mΩ), and fast switching (tR = 5.4 ns, tF = 9.3 ns) make it suitable for synchronous buck low-side switching. The integrated body diode has VSD = 0.7–1.2 V at 5 A, enabling efficient freewheeling before high-side FET turn-on.
Can DMN2025UFDB-7 be used in automotive applications?
While the device meets AEC-Q101 stress test requirements when manufactured in IATF 16949 facilities, it is not officially AEC-Q101 qualified. Diodes Incorporated states that automotive-grade versions require explicit PPAP documentation and change control-contact their automotive team for qualified variants like DMN2025UFDBQ-7.
What is the recommended PCB pad layout for thermal performance?
Per Diodes' Package Outline DS40151 Rev. 4-2, use the U-DFN2020-6 (Type B) suggested pad layout with a solid 1-inch² copper pour connected to the exposed thermal pad via ≥4 thermal vias (0.3 mm diameter, filled or plated). This achieves the 98 °C/W RθJA rating cited in the datasheet's Note 6.
DMN2025UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 486pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN2025UFDB-7 FAQ
1.How can I place an order for DMN2025UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2025UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2025UFDB-7 reliable?
The price and inventory of DMN2025UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2025UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMN2025UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2025UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2025UFDB-7?
DMN2025UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2025UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2025UFDB-7?
For technical support, including DMN2025UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2025UFDB-7 requirements.
6.How does Aetrix verify that DMN2025UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMN2025UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2025UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMN2025UFDB-7?
All DMN2025UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2025UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2025UFDB-7 part is unused and in its original packaging.
Return procedure for DMN2025UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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