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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2025UFDF-13

Name: DMN2025UFDF-13
Brand: Diodes Incorporated
SKU: DMN2025UFDF-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2025UFDF-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMN2025UFDF-13.pdf

Description:: MOSFET N-CH 20V 6.5A 6UDFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN2025UFDF-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for low R_DS(ON) at logic-level gate drive (25 mΩ @ V_GS = 4.5V, 6.5 A continuous), fast switching, and ESD-protected gate. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters and battery management systems.

For engineers reviewing the DMN2025UFDF-13 datasheet, DMN2025UFDF-13 pinout, DMN2025UFDF-13 application, or DMN2025UFDF-13 equivalent, key selection criteria include its 1.8V gate threshold compatibility, 0.6mm profile for ultra-thin designs, thermal resistance of 76°C/W on enhanced PCB layout, and validated performance in 1–3A portable power rails.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low conduction loss while maintaining controlled gate charge (Q_g = 5.9 nC @ V_GS = 4.5V) and fast switching (t_r = 5.4 ns, t_f = 9.3 ns). Its low V_GS(TH) (0.5–1.0 V) enables direct interface with 1.8V/2.5V microcontroller GPIOs without level-shifting.

The device integrates an intrinsic body diode with V_SD = 0.7–1.2 V @ I_S = 5 A and exhibits robust avalanche capability (E_AS = 8 mJ, I_AS = 8 A), supporting reliable operation under inductive load transients in buck converter freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Supports input rails up to 18 V with 10% margin; suitable for single-cell Li-ion (4.2 V) and dual-cell (8.4 V) battery systems.
R_DS(ON)	25 mΩ @ V_GS = 4.5V, I_D = 4 A - Delivers ≤100 mW conduction loss at 2 A, enabling >95% efficiency in 1–2 MHz buck converters.
V_GS(TH)	0.5–1.0 V - Ensures turn-on with standard 1.8V I/O; eliminates need for external gate driver in low-power load-switch applications.
Q_g	5.9 nC @ V_GS = 4.5V - Enables <10 ns effective switching transition with 6 Ω gate resistor; reduces gate-drive power in high-frequency SMPS.
R_θJA	76 °C/W - Achieved with 1-inch² copper pad; allows 1.6 W continuous dissipation at +70°C ambient in space-constrained PCB layouts.
C_iss/C_oss/C_rss	486 / 92 / 77 pF @ V_DS = 10 V - Low reverse transfer capacitance minimizes Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0 mm × 2.0 mm footprint, 0.6 mm maximum height, exposed thermal pad (pin 6), RoHS-compliant NiPdAu-plated terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing; connected to internal die source metallization.
4	Gate (G)	ESD-protected gate input; requires ≤10 kΩ series resistor for robustness against ringing in high-dV/dt environments.
5	Drain (D)	Main power terminal; tied directly to die drain region; must be routed over solid ground/power plane for thermal and EMI control.
6	Thermal Pad (EP)	Electrically connected to drain; mandatory solder connection to PCB thermal pad for achieving R_θJA = 76 °C/W rating.

Key Features

Feature	Design Value
0.6 mm profile	Enables integration into <0.8 mm total board thickness designs-critical for wearables and slim IoT sensors.
4 mm² PCB footprint	Reduces layout area by >50% vs. SO-8 or TSOP-6; supports dense multi-phase regulator modules.
ESD-protected gate	HBM rating ≥2 kV per JESD22-A114; eliminates need for external gate protection in automated assembly lines.
Low R_DS(ON) at 1.8 V	60 mΩ @ V_GS = 1.8 V, I_D = 4 A - Enables efficient operation directly from 1.8 V LDO outputs in always-on subsystems.
Halogen- and antimony-free	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752a Class 3 material declarations for automotive Tier-1 supply chain compliance.

Applications

Battery Protection Circuit

USB-C Power Delivery Sink

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; responds within <100 ns to protection IC fault signals.

Use Value: 25 mΩ R_DS(ON) limits voltage drop to <52 mV at 2.1 A, preserving battery runtime and minimizing thermal rise in sealed enclosures.

Use Scenario: Input power path management for USB-C PD receivers operating at 5–20 V.

IC Role / Device Role / Timing Role: High-side OR-ing FET enabling seamless switchover between adapter and battery sources.

Use Value: Fast t_f = 9.3 ns and low Q_gd = 2.2 nC minimize cross-conduction losses during dynamic voltage transitions across 20 V input range.

Portable DC-DC Buck Converter

Smartphone PMIC Load Switch

Use Scenario: Synchronous rectifier in 1.2–3.3 V output, 1–3 A buck regulators for APUs and RF modules.

IC Role / Device Role / Timing Role: Bottom-FET in 2 MHz fixed-frequency buck stage; driven by integrated controller's complementary gate signal.

Use Value: C_oss = 92 pF and low R_DS(ON) reduce switching loss and improve light-load efficiency by >3% vs. comparable 30 mΩ devices.

Use Scenario: Per-rail power gating for camera ISPs, display drivers, and sensor hubs in mobile SoC platforms.

IC Role / Device Role / Timing Role: Logic-level-controlled load switch enabling sub-10 μs rail enable/disable with minimal inrush.

Use Value: V_GS(TH) = 0.5–1.0 V ensures full enhancement using baseband processor's 1.8 V GPIO, eliminating level shifter BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2026UFDF-13	R_DS(ON) = 22 mΩ @ V_GS = 4.5V, but higher Q_g = 7.2 nC; same U-DFN2020-6 package.	Better conduction loss at high current (>4 A), but slower switching increases AC loss above 1.5 MHz.	Select when thermal budget dominates over switching frequency constraints (e.g., <1 MHz industrial DC-DC).
AO3414	SO-23 package; R_DS(ON) = 28 mΩ @ V_GS = 4.5V; no ESD protection; R_θJA = 150 °C/W.	Larger footprint (2.9 × 1.3 mm), higher thermal resistance limits power handling to ≤0.5 W without heatsink.	Choose only if legacy SO-23 layout reuse is required and peak current stays below 2.5 A.

Compared with DMN2025UFDF-13, DMN2026UFDF-13 trades 12% lower R_DS(ON) for 22% higher gate charge, while AO3414 sacrifices 12% conduction efficiency and 50% thermal performance for package compatibility-making DMN2025UFDF-13 optimal for balanced high-frequency, space-constrained power delivery.

Availability

DMN2025UFDF-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery sinks, and portable DC-DC buck converters requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMN2025UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This part belongs to Diodes' U-DFN logic-level MOSFET product line, engineered specifically for high-density, low-voltage power management in portable and battery-powered electronics where size, efficiency, and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The DMN2025UFDF-13 supports 5.2 A continuous drain current at T_A = +70°C with a 1-inch² copper pad (R_θJA = 76 °C/W), verified per datasheet Note 6. This rating assumes no derating beyond ambient temperature and accounts for junction-to-ambient thermal path limitations-not package or bond-wire current capacity alone.

Is the thermal pad (Pin 6) electrically isolated or connected internally?

Pin 6 is the exposed thermal pad and is electrically connected to the drain terminal internally. It must be soldered to a PCB copper pour tied to the drain net to achieve the specified 76 °C/W thermal resistance and avoid violating maximum junction temperature limits during operation.

Can this MOSFET be used in a high-side configuration with 5 V gate drive?

Yes-its V_GS(TH) max of 1.0 V and R_DS(ON) = 25 mΩ @ V_GS = 4.5V ensure full enhancement with 5 V gate drive. However, high-side use requires a floating gate driver or charge pump; the device itself does not integrate bootstrap circuitry or level-shifting capability.

Does the "e4" marking on the top-side indicate lead-free finish?

Yes-the "e4" marking denotes NiPdAu (nickel-palladium-gold) plating over the copper leadframe, confirming full RoHS compliance and halogen-free status per Diodes' definitions. This finish provides superior solderability, corrosion resistance, and wire-bond compatibility compared to traditional SnPb or matte tin finishes.

DMN2025UFDF-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.3 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 486 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMN2025UFDF-13 FAQ

1.How can I place an order for DMN2025UFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2025UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2025UFDF-13 reliable?

The price and inventory of DMN2025UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2025UFDF-13 is usually 5 days.

3.What payment methods are accepted for DMN2025UFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2025UFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2025UFDF-13?

DMN2025UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2025UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2025UFDF-13?

For technical support, including DMN2025UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2025UFDF-13 requirements.

6.How does Aetrix verify that DMN2025UFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMN2025UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2025UFDF-13 meets industry standards.

7.What is the process for return or replacement of DMN2025UFDF-13?

All DMN2025UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2025UFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2025UFDF-13 part is unused and in its original packaging.

Return procedure for DMN2025UFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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