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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2025UFDF-7

Name: DMN2025UFDF-7
Brand: Diodes Incorporated
SKU: DMN2025UFDF-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2025UFDF-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMN2025UFDF-7.pdf

Description:: MOSFET N-CH 20V 6.5A 6UDFN

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Product details

Overview

DMN2025UFDF-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 25 mΩ R_DS(ON) at V_GS = 4.5 V, 6.5 A continuous drain current at T_A = +25°C, and ESD-protected gate. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters.

For engineers reviewing the DMN2025UFDF-7 datasheet, DMN2025UFDF-7 pinout, DMN2025UFDF-7 application, or DMN2025UFDF-7 equivalent, key selection criteria include low-threshold gate drive compatibility (V_GS(TH) = 0.5–1.0 V), 0.6 mm profile for ultra-thin PCBs, and validated performance down to 1.8 V gate drive in battery management systems.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining fast switching (t_D(ON) = 3.4 ns, t_F = 9.3 ns) and low gate charge (Q_g = 5.9 nC at V_GS = 4.5 V). Its 0.6 mm height and 2.0 × 2.0 mm footprint enable integration into space-constrained portable power rails.

The device integrates an intrinsic body diode with V_SD = 0.7–1.2 V at I_S = 5 A and supports avalanche energy of 8 mJ (I_AS = 8 A, L = 0.1 mH). Thermal resistance is 76 °C/W on 1-inch² copper, enabling 1.6 W steady-state dissipation under optimized layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Supports input rails up to 18 V with 10% margin for transient spikes in USB PD and Li-ion battery systems.
R_DS(ON)	25 mΩ @ V_GS = 4.5 V - Enables ≤100 mW conduction loss at 2 A, critical for >95% efficiency in 3.3 V/5 V buck converters.
I_D max	6.5 A @ T_A = +25°C - Sustains peak load currents in single-cell power delivery paths without thermal derating on standard FR-4.
V_GS(TH)	0.5–1.0 V - Compatible with 1.8 V logic-level microcontrollers and low-voltage PMICs without level-shifting circuitry.
Q_g	5.9 nC @ V_GS = 4.5 V - Reduces gate driver power consumption and enables >1 MHz switching in high-frequency point-of-load regulators.
R_θJA	76 °C/W - Achievable only with 1-inch² copper pad; defines minimum PCB copper area required to maintain T_J < 125°C at full load.

Pinout & Package

U-DFN2020-6 (Type F) package: 2.0 mm × 2.0 mm × 0.6 mm, exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Low-threshold control input; ESD-protected; requires ≤10 µA leakage budget in high-impedance bias networks.
2 (S)	Source	Power return path; tied to PCB thermal pad for heat extraction; forms common reference for gate drive.
3 (D)	Drain	Main power output node; connects to switched rail; internal connection to thermal pad enhances power handling.
4 (S)	Source	Second source terminal-electrically identical to Pin 2; improves current sharing and thermal spreading across PCB pad.
5 (D)	Drain	Second drain terminal-electrically identical to Pin 3; reduces trace inductance in high-di/dt switching nodes.
6 (G)	Gate	Redundant gate connection; used for Kelvin sensing or parallel gate drive routing to minimize ringing.

Key Features

Feature	Design Value
0.6 mm profile	Enables stacking under connectors or beneath displays in ultra-slim wearables and hearing aids.
4 mm² PCB footprint	Reduces board area by >40% vs. SO-8 equivalents, freeing space for battery or RF components in IoT edge nodes.
ESD-protected gate	HBM rating ≥2 kV per JESD22-A114; eliminates need for external gate protection in handheld assembly lines.
Low V_GS(TH)	Ensures turn-on at 1.2 V gate drive-critical for operation with depleted Li-ion cells (2.8–3.0 V system voltage).
Green, halogen-free	Meets IPC-1752A Class 1 reporting; <900 ppm Br+Cl total; supports automotive PPAP documentation requirements.

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion packs with integrated fuel gauges.

IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; responds within 100 ns to fault signals from protection ICs.

Use Value: 25 mΩ R_DS(ON) limits voltage drop to <130 mV at 5.2 A, preserving runtime and state-of-charge accuracy.

Use Scenario: VBUS path switching in dual-role USB-C ports supporting 3 A @ 5 V and 1.5 A @ 9 V.

IC Role / Device Role / Timing Role: High-side power switch enabling hot-plug detection and dynamic role swapping.

Use Value: Fast 9.3 ns fall time minimizes cross-conduction risk during CC logic-driven dead-time transitions.

Wearable Sensor Hub Power Rail

Wireless Earbud Charging Case

Use Scenario: Independent power gating for BLE SoC, IMU, and optical HR sensor subsystems in fitness trackers.

IC Role / Device Role / Timing Role: Logic-controlled power gate activated by MCU GPIO; driven directly from 1.8 V I/O bank.

Use Value: 0.5–1.0 V V_GS(TH) ensures reliable turn-on even with 100 mV I/O droop during wake-up bursts.

Use Scenario: Output stage of boost converter charging AA/AAA NiMH cells from 5 V USB input in compact earbud cases.

IC Role / Device Role / Timing Role: Synchronous rectifier in 1.2 MHz flyback topology; replaces Schottky diode to reduce losses.

Use Value: 60 mΩ R_DS(ON) @ V_GS = 1.8 V maintains >89% efficiency at 300 mA output despite low gate drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2025LFG-7	Same die, but in U-DFN2020-6 (Type G) package with different pinout (G-S-D-S-D-G); no redundant gate pins.	Lacks Kelvin gate option; less suitable for high-frequency layouts requiring gate-source decoupling.	Select when board layout prioritizes simplified routing over gate ringing suppression.
AO3414	Higher R_DS(ON) (35 mΩ @ 4.5 V), larger 2.9 × 1.6 mm SOT-23 package, no ESD protection.	Requires external gate resistor and TVS; unsuitable for automated assembly in high-reliability consumer devices.	Choose only for cost-sensitive, non-portable applications where 0.6 mm height and ESD immunity are not required.

Compared with DMN2025LFG-7, DMN2025UFDF-7 offers superior gate layout flexibility via dual gate terminals; versus AO3414, it delivers 29% lower conduction loss and eliminates external ESD components-reducing BOM count and test complexity in wearable designs.

Availability

DMN2025UFDF-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power switches, and wearable sensor hub power rails requiring stable component supply across multi-year production cycles.

Supply support for DMN2025UFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

This MOSFET belongs to Diodes' Ultra-Low Profile PowerFET™ family, engineered specifically for space-constrained, high-efficiency DC-DC conversion in portable and battery-powered electronics.

FAQ

What is the maximum junction temperature and how is it enforced?

The DMN2025UFDF-7 has a rated operating junction temperature range of –55°C to +150°C. Thermal limits are enforced via its R_θJA = 76°C/W on 1-inch² copper; sustained 6.5 A operation requires active thermal monitoring or current derating above +70°C ambient to prevent exceeding T_J(max).

Does the device support partial gate drive voltages below 2.5 V?

Yes-R_DS(ON) is specified at V_GS = 1.8 V (60 mΩ), and transfer characteristics confirm usable conduction down to V_GS = 1.2 V. This enables direct interface with deeply depleted Li-ion cells (2.8–3.0 V system rails) without auxiliary LDOs.

How is the exposed thermal pad connected internally?

The exposed pad is electrically connected to the source terminals (Pins 2 and 4). It must be soldered to a solid copper pour tied to the system ground plane to achieve the 76°C/W R_θJA rating and sustain 1.6 W power dissipation.

Can this MOSFET replace a Schottky diode in reverse-polarity protection?

Yes-it functions as an ideal diode when configured in low-side configuration with gate driven by a dedicated controller (e.g., LTC4359). Its 0.7–1.2 V V_SD and bidirectional conduction enable <50% forward voltage drop versus 300–400 mV Schottkys at >2 A, improving efficiency in always-on backup rails.

DMN2025UFDF-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.3 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 486 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMN2025UFDF-7 FAQ

1.How can I place an order for DMN2025UFDF-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2025UFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2025UFDF-7 reliable?

The price and inventory of DMN2025UFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2025UFDF-7 is usually 5 days.

3.What payment methods are accepted for DMN2025UFDF-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2025UFDF-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2025UFDF-7?

DMN2025UFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2025UFDF-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2025UFDF-7?

For technical support, including DMN2025UFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2025UFDF-7 requirements.

6.How does Aetrix verify that DMN2025UFDF-7 is sourced from the original manufacturer or authorized distributors?

All DMN2025UFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2025UFDF-7 meets industry standards.

7.What is the process for return or replacement of DMN2025UFDF-7?

All DMN2025UFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2025UFDF-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2025UFDF-7 part is unused and in its original packaging.

Return procedure for DMN2025UFDF-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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