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Diodes Incorporated DMN2026UVT-13
- Part No.:
- DMN2026UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2026UVT-13.pdf
- Description:
- MOSFET N-CH 20V 6.2A TSOT-26
- Quantity:
- Payment:
- Shipping:
Inventory:3,115
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Product details
Overview
DMN2026UVT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V VDSS, 24 mΩ RDS(ON) at 4.5V VGS, and 6.2A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and power management functions in space-constrained portable electronics.
For engineers reviewing the DMN2026UVT-13 datasheet, DMN2026UVT-13 pinout, DMN2026UVT-13 application, or DMN2026UVT-13 equivalent, key selection criteria include low-voltage gate drive compatibility (2.5V–4.5V), fast switching (tF = 197 ns), ESD-protected gate, thermal resistance (RθJA = 75 °C/W with thermal vias), and TSOT26 footprint suitability for high-density PCB layouts.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 10 nC at 4.5V) and minimized output capacitance (Coss = 91 pF). Its threshold voltage range (0.4–1.5 V) enables reliable turn-on with logic-level drivers.
The integrated body diode supports synchronous rectification and reverse recovery (tRR = 119 ns, QRR = 96 nC), and the device is characterized for operation across –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 4.5V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 3.3V/5V rail applications |
| RDS(ON) | 24 mΩ @ VGS = 4.5V, ID = 6.2A - Enables <150 mW conduction loss at 6A load |
| Qg | 10 nC @ VGS = 4.5V - Low gate drive energy supports >1 MHz switching in buck converters |
| Ciss | 887 pF @ VDS = 10V - Limits Miller-induced shoot-through risk in half-bridge topologies |
| tF | 197 ns - Fast fall time reduces switching transition losses in high-frequency SMPS |
| RθJA | 75 °C/W (with thermal vias) - Allows 1.75 W dissipation at +25°C ambient with proper layout |
| VGS(TH) | 0.4–1.5 V - Ensures robust turn-on with 2.5V GPIO or low-dropout LDO outputs |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.90 × 2.80 × 0.60 mm), lead-free, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Main current return path; internally connected to exposed thermal pad for enhanced heat transfer |
| 2 (G) | Gate | Control terminal with ±10 V rating and integrated ESD protection diode to source |
| 3 (D) | Drain | High-side switch node; electrically tied to die substrate and thermal pad |
| 4 (S) | Source | Second source connection - paralleled with Pin 1 to reduce source inductance in high-dI/dt paths |
| 5 (D) | Drain | Second drain connection - paralleled with Pin 3 to minimize channel resistance and improve current sharing |
| 6 (D) | Drain | Third drain connection - provides additional thermal and electrical path to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V VGS | 32 mΩ - Enables efficient operation directly from 2.5V logic rails without level-shifting |
| ESD-protected gate | HBM >2 kV - Eliminates need for external gate protection in handheld and USB-powered designs |
| Low input capacitance | Ciss = 887 pF - Reduces driver power consumption and improves control loop stability |
| Fast switching speed | tD(OFF) = 619 ns, tF = 197 ns - Supports high-frequency (>500 kHz) PWM in compact power supplies |
| Thermally enhanced layout | Exposed drain pads on Pins 3/5/6 - Enables direct thermal coupling to inner-layer copper planes via vias |
Applications
| Mobile Power Bank DC-DC | LCD Backlight Driver |
|---|---|
Use Scenario: Step-down conversion from single-cell Li-ion (3.0–4.2V) to 3.3V/1.8V system rails in portable power banks. IC Role / Device Role: Synchronous high-side switch in 1.2 MHz buck converter controlling output voltage and efficiency. Use Value: 24 mΩ RDS(ON) at 4.5V VGS limits conduction loss to <100 mW at 2A, extending battery runtime by ≥8% vs. standard 40 mΩ alternatives. |
Use Scenario: PWM-controlled current sink for white LED strings in automotive infotainment displays. IC Role / Device Role: Low-side constant-current switch modulating LED brightness with 100–1000 Hz dimming frequency. Use Value: Fast tF = 197 ns ensures clean dimming edges without visible flicker, while 2.5V-compatible VGS(TH) allows direct MCU GPIO drive. |
| USB-C PD Sink Protection | Industrial Sensor Node PMIC |
Use Scenario: Reverse-polarity and overcurrent protection switch between USB-C receptacle and internal 5V bus. IC Role / Device Role: Low-RDS(ON) pass transistor enabling <50 mV drop at 3A, minimizing voltage loss during hot-plug events. Use Value: 24 mΩ RDS(ON) ensures <75 mV dropout at full 3A load, preserving regulated 4.75V minimum for downstream regulators. |
Use Scenario: Load switch enabling/disabling 3.3V sensor supply rail in battery-operated IoT nodes. IC Role / Device Role: Controlled power gating element with fast enable/disable response and low quiescent current leakage. Use Value: IDSS <1 μA at 20V ensures <100 nA standby leakage per switch, extending 10-year battery life targets in LPWAN sensors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2026LVT-7 | Same die, but in TSOT26-7 variant with different tape/reel packaging (3k vs. 10k); identical electrical specs and thermal performance. | No functional difference - only logistics distinction for small-batch prototyping vs. production volume. | Select DMN2026LVT-7 for evaluation or low-volume builds where reel size impacts inventory turnover. |
| AO3414 | RDS(ON) = 32 mΩ @ 4.5V (vs. 24 mΩ); higher Ciss = 1050 pF; no specified ESD rating; same TSOT26 footprint. | Suitable for cost-sensitive non-critical loads where 33% higher conduction loss is acceptable. | Choose AO3414 only when BOM cost reduction outweighs 0.5W extra loss at 6A and absence of gate ESD hardening. |
Compared with DMN2026UVT-13, DMN2026LVT-7 offers identical performance in smaller reels for flexibility, while AO3414 trades 33% higher RDS(ON) and unqualified ESD tolerance for lower unit cost - making the DMN2026UVT-13 optimal for thermally constrained, high-reliability 2.5–4.5V gate-drive systems.
Availability
DMN2026UVT-13 is available at Aetrix Electronics and suitable for mobile power bank DC-DC converters, LCD backlight drivers, and USB-C PD sink protection circuits requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DMN2026UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.
The DMN2026UVT-13 belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level MOSFET" product line, engineered specifically for high-efficiency, space-constrained power conversion in battery-powered and USB-powered devices.
FAQ
Is DMN2026UVT-13 suitable for 2.5V gate drive applications?
Yes. The device guarantees RDS(ON) ≤32 mΩ at VGS = 2.5V and ID = 5.2A, with a gate threshold voltage range of 0.4–1.5V. This ensures full enhancement and low conduction loss when driven directly from 2.5V microcontrollers or LDOs without level-shifting circuitry.
What is the maximum continuous drain current at +85°C ambient?
At TA = +85°C with the recommended 2oz FR-4 board layout and thermal vias, the maximum continuous drain current is derated to approximately 4.3A, based on its 1.75W power dissipation rating and 75°C/W thermal resistance (PD = ID² × RDS(ON); solving yields ID ≈ √(1.75W / 0.024Ω) ≈ 8.5A at 25°C, then linearly derated).
Does DMN2026UVT-13 include integrated gate protection?
Yes. The datasheet explicitly states "ESD Protected Gate" and specifies ±10V gate-source voltage rating. Electrical characteristics confirm IGSS ≤ ±10 μA at ±8V, and the equivalent circuit diagram shows a gate-to-source protection diode - eliminating need for external TVS or resistors in most portable applications.
Can DMN2026UVT-13 be used in synchronous rectifier configurations?
Yes. Its body diode exhibits VSD = 0.7–1.2V at IS = 1.3A and tRR = 119 ns with QRR = 96 nC, enabling use as a synchronous rectifier in buck or flyback topologies up to ~500 kHz. Layout must minimize source inductance (via dual-source pins) to avoid shoot-through.
DMN2026UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.4 nC @ 8 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 887 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.15W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
DMN2026UVT-13 FAQ
1.How can I place an order for DMN2026UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2026UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2026UVT-13 reliable?
The price and inventory of DMN2026UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2026UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN2026UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2026UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2026UVT-13?
DMN2026UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2026UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2026UVT-13?
For technical support, including DMN2026UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2026UVT-13 requirements.
6.How does Aetrix verify that DMN2026UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN2026UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2026UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN2026UVT-13?
All DMN2026UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2026UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2026UVT-13 part is unused and in its original packaging.
Return procedure for DMN2026UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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