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Diodes Incorporated DMN2026UVT-7

Part No.:
DMN2026UVT-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMN2026UVT-7.pdf
Description:
MOSFET N-CH 20V 6.2A TSOT-26
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,989

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Product details

Overview

DMN2026UVT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a TSOT26 package, rated for 20V VDS, 24 mΩ RDS(ON) at 4.5V VGS, and 6.2A continuous drain current at +25°C. It delivers low gate charge (10 nC at VGS = 4.5V), fast switching (tr = 66 ns), and ESD-protected gate - optimized for high-efficiency DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMN2026UVT-7 datasheet, DMN2026UVT-7 pinout, DMN2026UVT-7 application, or DMN2026UVT-7 equivalent, key selection criteria include its 2.5V logic-level gate drive capability, 1.15W power dissipation on FR-4, 887 pF input capacitance, and thermal resistance of 107°C/W (junction-to-ambient, steady-state).

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining robust body diode performance (VSD = 0.7–1.2 V at 1.3 A) and low reverse recovery charge (QRR = 96 nC). Its gate threshold voltage (0.4–1.5 V) enables reliable turn-on with 2.5V microcontroller outputs.

The device features integrated gate protection diodes and is characterized for operation across –55°C to +150°C junction temperature. Thermal design is supported by validated RθJC = 16°C/W and transient thermal impedance curves for pulsed-load analysis.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating20 V - supports 12V rail switching and USB-powered systems without derating
RDS(ON) @ 4.5V24 mΩ max - enables <150 mW conduction loss at 6.2A, critical for thermally constrained PCBs
Qg @ 4.5V10 nC - reduces gate driver power demand and switching transition time in high-frequency converters
Ciss887 pF - determines Miller effect and required gate drive strength for stable 1–2 MHz operation
tr/tf66 ns / 197 ns - enables efficient hard-switched topologies up to ~1.5 MHz with minimal overlap loss
PD (FR-4)1.15 W - defines maximum continuous power handling on standard 1-oz copper board without thermal vias
VGS(TH)0.4–1.5 V - ensures full enhancement with 1.8V/2.5V/3.3V logic families, including low-voltage MCUs

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (1.0 mm height, 2.9 × 2.8 mm footprint), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (S)SourceCommon return path for load current; tied to ground or low-side reference in buck/boost configurations
2 (G)GateControl terminal requiring ≤±10 V drive; ESD-protected with internal diode clamp
3 (D)DrainHigh-side connection point for load; carries full switched current and withstands 20 V transients
4 (S)Source (redundant)Second source bond for lower parasitic inductance and improved thermal spreading in high-current paths
5 (D)Drain (redundant)Second drain bond to reduce channel resistance and improve current sharing under pulse loads
6 (G)Gate (redundant)Secondary gate bond minimizes gate loop inductance, critical for noise immunity in high-dV/dt environments

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 2.5 V - eliminates need for gate boosters in portable 3.3V/2.5V systems
Low Qgd/Qgs ratioQgd = 1.8 nC, Qgs = 1.3 nC - improves hard-switching efficiency and reduces Miller-induced shoot-through risk
Body diode softnesstRR = 119 ns, QRR = 96 nC - minimizes voltage overshoot and EMI during synchronous rectifier commutation
Thermal vias compatible layoutValidated PD = 1.75 W with 2-oz copper + thermal vias - enables >2× power handling vs. standard FR-4
ESD-protected gateHBM rating ≥ 2 kV - prevents field failure during assembly and handling without external Zener clamps

Applications

DC-DC Buck ConverterLED Backlight Driver

Use Scenario: Step-down regulator supplying 3.3V/5V from 12V automotive or industrial input.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in fixed-frequency 500 kHz–1 MHz converter.

Use Value: 24 mΩ RDS(ON) at 4.5V reduces conduction loss by 35% vs. comparable 30 mΩ MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Constant-current LED string driver for LCD panel backlighting in thin client displays.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch modulating current through 4–6 series LEDs.

Use Value: Fast tr/tf (66/197 ns) enables clean 10–20 kHz dimming without visible flicker or audible noise.

USB Power Delivery SwitchLoad Switch for Portable Devices

Use Scenario: Input protection and hot-swap control in USB-C PD 20V/3A power path.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected high-side switch with controlled slew rate.

Use Value: 20V VDS rating and 6.2A ID support full USB PD 3.0 specification without derating; low Ciss ensures stable gate control under noisy bus conditions.

Use Scenario: Always-on rail enable for PMIC subsystems in battery-powered IoT sensors.

IC Role / Device Role / Timing Role: Low-quiescent current load switch with fast turn-on for wake-up event response.

Use Value: Sub-1V VGS(TH) allows direct MCU GPIO control; 10 nC Qg enables <1 μs turn-on delay, meeting sub-10 μs wake latency targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2026LVT-7RDS(ON) = 28 mΩ @ 4.5V; same TSOT26 package and pinoutSlightly higher conduction loss; identical thermal and switching specsSelect when marginally higher RDS(ON) is acceptable for cost-sensitive volume production
AO3400ARDS(ON) = 28 mΩ @ 4.5V; SO-23 package (larger footprint, higher RθJA)Higher thermal resistance (150°C/W) limits power density; slower tr (10 ns longer)Choose only if legacy SO-23 board space is fixed and thermal headroom exceeds 25°C

Compared with DMN2026LVT-7 and AO3400A, the DMN2026UVT-7 offers the lowest RDS(ON) in TSOT26, enabling highest power density in space-constrained DC-DC modules and fastest switching among logic-level 20V MOSFETs with matched package size.

Availability

DMN2026UVT-7 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and USB power delivery systems requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.

Supply support for DMN2026UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers across Asia, Europe, and the U.S., serving industrial, computing, consumer, and communications markets.

The DMN2026UVT-7 belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level MOSFET" product line, engineered specifically for high-efficiency, high-density power conversion in portable and energy-sensitive applications.

FAQ

What is the maximum continuous drain current at +85°C ambient?

At TA = +85°C with standard FR-4 mounting (no thermal vias), the maximum continuous drain current is derated to 4.3 A based on RθJA = 107°C/W and TJ(max) = +150°C. With 2-oz copper and thermal vias, it supports 5.8 A at +85°C per the 1.75 W PD rating.

Is the DMN2026UVT-7 suitable for synchronous rectification in a 1 MHz buck converter?

Yes - its 10 nC total gate charge, 66 ns rise time, and 887 pF Ciss enable efficient synchronous operation at 1 MHz. The low Qgd/Qgs ratio further suppresses Miller-induced false turn-on, critical for stability in high-frequency topologies.

Does the TSOT26 package support reflow soldering per JEDEC J-STD-020?

Yes - the DMN2026UVT-7 is qualified for moisture sensitivity level 1 (MSL-1), meaning it can be stored indefinitely at ≤30°C/60% RH and subjected to standard lead-free reflow profiles (peak 260°C) without baking or special handling.

How does the body diode performance compare to Schottky alternatives?

The integrated body diode has VSD = 0.7–1.2 V at 1.3 A and tRR = 119 ns. While forward voltage is higher than Schottky diodes, its soft recovery and co-packaged integration eliminate layout parasitics and reduce EMI - making it preferable to discrete Schottky + MOSFET solutions in compact, high-reliability designs.

DMN2026UVT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18.4 nC @ 8 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
887 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.15W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMN2026UVT-7 FAQ

1.How can I place an order for DMN2026UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2026UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2026UVT-7 reliable?

The price and inventory of DMN2026UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2026UVT-7 is usually 5 days.

3.What payment methods are accepted for DMN2026UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2026UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2026UVT-7?

DMN2026UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2026UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2026UVT-7?

For technical support, including DMN2026UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2026UVT-7 requirements.

6.How does Aetrix verify that DMN2026UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN2026UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2026UVT-7 meets industry standards.

7.What is the process for return or replacement of DMN2026UVT-7?

All DMN2026UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2026UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2026UVT-7 part is unused and in its original packaging.

Return procedure for DMN2026UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2026UVT-7 Tags

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