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Diodes Incorporated DMN2028UFDF-13
- Part No.:
- DMN2028UFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2028UFDF-13.pdf
- Description:
- MOSFET N-CH 20V 7.9A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,951
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Product details
Overview
DMN2028UFDF-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in U-DFN2020-6 package, optimized for low RDS(ON) (25 mΩ @ VGS = 4.5 V) and fast switching in compact power management circuits. It delivers 7.9 A continuous drain current at +25°C and supports battery management, DC-DC converters, and load switching in space-constrained portable electronics.
For engineers reviewing the DMN2028UFDF-13 datasheet, DMN2028UFDF-13 pinout, DMN2028UFDF-13 application, or DMN2028UFDF-13 equivalent, key selection criteria include gate threshold voltage (0.5–1.0 V), thermal resistance (64 °C/W with copper pad), ESD-protected gate, and compatibility with 1.5–4.5 V logic-level drive in high-efficiency buck stages.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining robust switching performance. Its 0.6 mm profile and 4 mm² footprint enable integration into ultra-thin PCBs, and the integrated source-drain diode supports synchronous rectification in step-down regulators.
The device features a gate threshold voltage of 0.5–1.0 V, enabling direct drive from 1.8 V and 2.5 V microcontrollers. Its dynamic parameters-Qg = 9.8 nC (VGS = 4.5 V), tr = 87 ns, tf = 239 ns-support high-frequency operation up to 1 MHz in DC-DC controllers without excessive gate drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 3.3 V/5 V input rail protection and 12 V bus switching. |
| RDS(ON) | 25 mΩ @ VGS = 4.5 V - Enables <150 mW conduction loss at 4 A, critical for thermally limited battery-powered designs. |
| ID (continuous) | 7.9 A @ TA = +25°C - Supports high-current load switching in USB PD adapters and power banks with minimal derating. |
| VGS(TH) | 0.5–1.0 V - Ensures reliable turn-on with 1.8 V I/O domains and eliminates need for level-shifting in MCU-driven power rails. |
| Qg | 9.8 nC @ VGS = 4.5 V - Reduces gate driver power consumption and enables use with low-current GPIO pins in portable systems. |
| RθJA | 64 °C/W (with 1-inch² copper pad) - Allows 2.03 W power dissipation at +70°C ambient, supporting sustained operation in enclosed enclosures. |
| Ciss | 907 pF - Limits high-frequency gate oscillation risk and simplifies layout in noise-sensitive sensor modules. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, RoHS-compliant NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; ESD-protected; requires <10 kΩ series resistor for robustness in noisy environments. |
| 2 (S) | Source | Power return node; tied to PCB ground plane; forms low-inductance path for synchronous rectifier current. |
| 3 (D) | Drain | High-side or low-side power switch node; connects to input rail or output inverter leg; shares thermal pad with case. |
| 4 (S) | Source | Second source terminal for improved current sharing and reduced package parasitic inductance. |
| 5 (D) | Drain | Second drain terminal enhancing current capacity and thermal spreading in high-pulse-load applications. |
| 6 (Thermal Pad) | Exposed Drain / Thermal Interface | Internally connected to drain; must be soldered to solid copper pour for RθJA = 64 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile U-DFN2020-6 | 0.6 mm height enables stacking under displays or beneath batteries in smartphones and wearables. |
| Logic-level gate drive | VGS(TH) ≤ 1.0 V ensures full enhancement with 1.8 V/2.5 V microcontroller outputs without external biasing. |
| ESD-protected gate | HBM rating ≥ 2 kV per JESD22-A114 allows safe handling during SMT assembly and field rework. |
| Green, halogen-free construction | <900 ppm Br+Cl, <1000 ppm Sb - meets IPC-1752A Class 3 reporting and automotive ELV compliance. |
| Fast switching with low Qgd/Qgs | Qgd = 1.8 nC, Qgs = 1.5 nC - minimizes Miller plateau duration and improves duty-cycle fidelity in PWM control. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs with integrated fuel gauges. IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; responds within 100 ns to fault signals from protection ICs. Use Value: 25 mΩ RDS(ON) limits voltage drop to <100 mV at 4 A, preserving battery runtime and state-of-charge accuracy. |
Use Scenario: Input power path selection between legacy USB-A and USB-C ports in portable chargers. IC Role / Device Role / Timing Role: High-side OR-ing switch enabling seamless source handover without output glitch. Use Value: Fast tf = 239 ns and low Coss = 98 pF prevent cross-conduction and reduce transient overshoot during port switching. |
| Step-Down Converter High-Side Switch | Smartphone Backlight Dimming Driver |
|
Use Scenario: High-frequency (1–2 MHz) buck converter in PMICs powering application processors. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating in continuous conduction mode with 500 ns dead-time control. Use Value: Qg = 9.8 nC reduces gate drive loss by >40% vs. comparable 30 V MOSFETs, improving light-load efficiency above 92%. |
Use Scenario: PWM-controlled current sink for white LED strings in OLED display power management. IC Role / Device Role / Timing Role: Low-side current regulator modulating LED current at 10–20 kHz with minimal thermal rise. Use Value: 0.6 mm profile allows placement directly beneath display flex cables; RDS(ON) stability over –55 to +150°C ensures consistent brightness across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2028LFD-7 | Same die, but in leaded SOT-23-6 package; RDS(ON) = 28 mΩ @ 4.5 V; higher RθJA = 190 °C/W. | Preferred for prototyping or low-volume boards where hand-soldering or test probe access is required. | Select when thermal budget allows >2× junction-to-ambient resistance and board real estate permits larger footprint. |
| AO3414 | RDS(ON) = 32 mΩ @ 4.5 V; Qg = 12 nC; no specified ESD rating; 0.95 mm height. | Suitable for cost-sensitive industrial power supplies where 10% higher conduction loss is acceptable. | Choose only if gate drive strength exceeds 15 mA and ESD immunity is verified externally via RC snubbers. |
Compared with DMN2028UFDF-13, DMN2028LFD-7 trades thermal performance for assembly flexibility, while AO3414 sacrifices gate robustness and efficiency for lower unit cost-making the DMN2028UFDF-13 optimal for miniaturized, high-reliability consumer power stages.
Availability
DMN2028UFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and high-density DC-DC converters requiring stable component supply and long-term lifecycle support.
Supply support for DMN2028UFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' Ultra-Low RDS(ON) Logic-Level Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in portable and wearable electronics.
FAQ
What is the maximum allowable gate-source voltage for DMN2028UFDF-13?
The absolute maximum VGS is ±8 V per the datasheet's "Maximum Ratings" table. Exceeding this risks permanent gate oxide damage. For reliable operation, keep VGS ≤ 6 V in all conditions-including transient spikes-and use a Zener clamp if driving from unregulated sources.
Can DMN2028UFDF-13 be used in avalanche mode?
Yes-it is rated for 12 A avalanche current (IAS) and 8 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. However, avalanche operation is not recommended for repetitive stress; it is intended only for infrequent fault events like inductive kickback in relay drivers.
Is the thermal pad electrically isolated in U-DFN2020-6?
No-the exposed thermal pad is internally connected to the drain terminal. It must be soldered to a PCB copper pour tied to the drain net to maintain electrical integrity and achieve the specified 64 °C/W thermal resistance. Floating or grounding the pad causes functional failure and thermal runaway.
Does DMN2028UFDF-13 meet AEC-Q101 for automotive use?
No-the standard DMN2028UFDF-13 is not AEC-Q101 qualified. Diodes offers an automotive-grade variant (e.g., DMN2028UFDFQ-13) with PPAP documentation, extended temperature screening, and IATF 16949 manufacturing controls. Use only the Q-suffix part for automotive applications.
DMN2028UFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 907 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 660mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMN2028UFDF-13 FAQ
1.How can I place an order for DMN2028UFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2028UFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2028UFDF-13 reliable?
The price and inventory of DMN2028UFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2028UFDF-13 is usually 5 days.
3.What payment methods are accepted for DMN2028UFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2028UFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2028UFDF-13?
DMN2028UFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2028UFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2028UFDF-13?
For technical support, including DMN2028UFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2028UFDF-13 requirements.
6.How does Aetrix verify that DMN2028UFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMN2028UFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2028UFDF-13 meets industry standards.
7.What is the process for return or replacement of DMN2028UFDF-13?
All DMN2028UFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2028UFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2028UFDF-13 part is unused and in its original packaging.
Return procedure for DMN2028UFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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