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Diodes Incorporated DMN2028UFU-13
- Part No.:
- DMN2028UFU-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
DMN2028UFU-13.pdf
- Description:
- MOSFET 2N-CH 20V 7.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,233
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Product details
Overview
DMN2028UFU-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2030-6 package, rated for 20V V(BR)DSS, 20.2mΩ RDS(ON) @ 4.5V VGS, and 7.5A continuous drain current at +25°C. It integrates ESD-protected gates and low-threshold voltage (0.5–1.0V) for efficient load switching in compact battery-powered systems.
For engineers reviewing the DMN2028UFU-13 datasheet, DMN2028UFU-13 pinout, DMN2028UFU-13 application, or DMN2028UFU-13 equivalent, key selection criteria include its dual-channel configuration, 2.5V gate drive capability, 887pF input capacitance, thermal resistance of 69°C/W (with copper pad), and compliance with RoHS, halogen-free, and antimony-free "Green" standards.
Technical Context
This dual MOSFET uses planar trench-gate technology to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 53ns, tF = 197ns) and low gate charge (Qg = 10nC @ 4.5V). Its symmetric channel pairing supports independent or paralleled operation in high-density power rails.
The device features integrated gate protection diodes per channel, 12A avalanche current rating (IAS), and operates across –55°C to +150°C junction temperature range. Thermal performance is optimized for FR-4 PCBs with 1-inch² copper plate (RθJA = 69°C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum blocking voltage before breakdown; enables use in 12V/19V battery systems and USB PD auxiliary rails. |
| RDS(ON) Max | 20.2mΩ @ VGS = 4.5V - Low conduction loss at standard logic-level drive; supports ≥95% efficiency in 5A load switch designs. |
| ID (Cont) | 7.5A @ TA = +25°C - Sustained current handling with 1.8W power dissipation limit on enhanced PCB layout. |
| VGS(TH) | 0.5–1.0V - Ensures reliable turn-on with 1.8V/2.5V microcontroller GPIOs without level-shifting. |
| Ciss | 887pF - Low input capacitance reduces gate drive power and speeds up switching transitions. |
| Qg | 10nC @ VGS = 4.5V - Enables fast, low-energy gate charging for high-frequency PWM control (e.g., 500kHz+ DC-DC sync rectification). |
| ESD Rating | HBM ±2kV - Integrated gate protection eliminates need for external TVS in space-constrained portable designs. |
Pinout & Package
Package: U-DFN2030-6 - 2.0mm × 3.0mm × 0.6mm ultra-thin molded plastic case (UL 94V-0), moisture sensitivity level 1, 0.012g weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Channel 1 Gate | Logic-level input controlling first N-channel MOSFET; tied internally to ESD diode to S1. |
| 2 (S1) | Channel 1 Source | Power return node for Channel 1; electrically isolated from S2 but thermally coupled via shared die substrate. |
| 3 (D1) | Channel 1 Drain | Main current path output for Channel 1; connected to top-side copper paddle for thermal conduction. |
| 4 (D2) | Channel 2 Drain | Main current path output for Channel 2; symmetrical to D1; shares thermal pad with D1. |
| 5 (S2) | Channel 2 Source | Power return node for Channel 2; separate electrical node from S1, enabling floating or independent source biasing. |
| 6 (G2) | Channel 2 Gate | Independent logic-level input for second MOSFET; includes dedicated gate protection diode to S2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate load switches or half-bridge configurations without cross-conduction risk; no shared source/drain ties. |
| Low 2.5V gate threshold | Guarantees full enhancement with 2.5V I/Os (e.g., ARM Cortex-M0+/M4 MCUs), eliminating external level shifters in wearables and IoT nodes. |
| 8.4°C/W RθJC | Direct junction-to-case thermal path allows >1.5W dissipation into PCB copper when using recommended 1-inch² thermal pad. |
| 100% lead-free & green compound | Complies with EU RoHS 2, halogen-free (<900ppm Br/Cl), and antimony-free (<1000ppm) requirements for automotive and medical end equipment. |
| Fast 66ns rise time | Reduces switching losses in 300–1000kHz DC-DC converters; pairs with low Qgd (1.8nC) to minimize Miller-induced shoot-through. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Dual-path overcurrent and reverse-polarity protection in smart battery packs with separate charge/discharge FET control. IC Role / Device Role / Timing Role: Dual N-MOSFET used as back-to-back switch pair; G1/S1 controls discharge path, G2/S2 controls charge path. Use Value: 20.2mΩ RDS(ON) limits voltage drop to <100mV at 5A, preserving battery runtime; ESD protection prevents gate damage during hot-plug events. |
Use Scenario: Bidirectional 5–20V power path management in USB-C port controllers supporting alternate modes and power role swapping. IC Role / Device Role / Timing Role: Load switch for VBUS routing; each channel handles forward/reverse conduction depending on CC logic state. Use Value: 2.5V gate drive compatibility enables direct interface with USB PD controller GPIOs; 12A avalanche rating withstands transient fault currents. |
| Wireless Earbud Charging Case | Industrial Sensor Node Power Sequencing |
|
Use Scenario: Independent enable control of charging circuitry (Li-ion charger IC) and system power rail (PMIC input) from single Li-Po cell. IC Role / Device Role / Timing Role: Dual low-RDS(ON) switch isolating charger IC input and PMIC input; sequenced via MCU GPIOs. Use Value: 0.5V gate threshold ensures turn-on at end-of-discharge (2.8V battery); 23.5mΩ @ 2.5V VGS maintains <80mV dropout at 3.5A peak load. |
Use Scenario: Controlled power-up sequencing of analog front-end (AFE), MCU, and RF transceiver in battery-operated environmental sensors. IC Role / Device Role / Timing Role: Dual-channel power switch enabling staggered enable timing (e.g., AFE first, then MCU, then radio) via independent gate signals. Use Value: Independent S1/S2 terminals allow ground-referenced or floating source configurations; low Ciss minimizes timing skew between channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2028UFDE-7 | Same die, identical RDS(ON) and gate specs, but packaged in U-DFN2020-6 (2.0×2.0mm) with 4-pin layout (no G2/S2 separation). | Single-channel only; lacks independent second source terminal - unsuitable for back-to-back or isolated dual-load configurations. | Select only if board space is constrained to <2.0mm² and dual independent sources are not required. |
| SI2302DS-T1-GE3 | Single N-channel, 20V, 35mΩ @ 4.5V, 2.6A ID; no ESD protection; SOT-23 package. | Requires two devices and external gate protection for dual-path function; higher RDS(ON) increases conduction loss by >70% at 4.5A. | Use only for cost-sensitive, low-current (<2A) applications where dual-channel integration is unnecessary. |
Compared with DMN2028UFU-13, DMN2028UFDE-7 sacrifices channel independence for smaller footprint, while SI2302DS-T1-GE3 requires duplication and external protection to approximate functionality - making DMN2028UFU-13 the only single-device solution for compact, robust dual-load switching.
Availability
DMN2028UFU-13 is available at Aetrix Electronics and suitable for battery pack protection, USB-C power delivery switching, and wireless earbud charging case designs requiring stable component supply and long-term industrial lifecycle support.
Supply support for DMN2028UFU-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The DMN2028UFU belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage load switching in portable and battery-powered applications where size, thermal performance, and gate-drive simplicity are critical.
FAQ
What is the maximum safe operating temperature for DMN2028UFU-13?
The junction temperature must not exceed +150°C under any operating condition. With RθJA = 69°C/W on a 1-inch² copper pad, the device supports 7.5A continuous current at ambient ≤+55°C. Derating is required above that ambient; full derating curves are provided in Figure 12 (SOA) of the datasheet.
Can DMN2028UFU-13 be used in a back-to-back configuration for AC coupling?
Yes - its dual independent channels with separate S1 and S2 terminals enable true back-to-back N-MOSFET configuration for bidirectional blocking. Each channel's body diode orientation allows reverse-current blocking when gates are biased appropriately, as confirmed in the Equivalent Circuit diagram (page 2).
Does DMN2028UFU-13 require external gate resistors for typical 3.3V MCU drive?
No external gate resistor is required for basic on/off switching at ≤100kHz. The device's low input capacitance (887pF) and 191Ω gate resistance allow clean 3.3V GPIO edges; however, a 10Ω series resistor is recommended for EMI suppression in high-noise environments or when driving at >500kHz.
Is the U-DFN2030-6 package compatible with standard reflow profiles?
Yes - the package meets IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and is qualified for standard lead-free reflow (peak 260°C, 60s above 217°C). Recommended solder paste volume and stencil aperture are defined in AP02001 (Diodes' suggested pad layout document).
DMN2028UFU-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A
- Rds On (Max) @ Id, Vgs:
- 20.2mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 887pF @ 10V
- Power - Max:
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2030-6 (Type B)
DMN2028UFU-13 FAQ
1.How can I place an order for DMN2028UFU-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2028UFU-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2028UFU-13 reliable?
The price and inventory of DMN2028UFU-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2028UFU-13 is usually 5 days.
3.What payment methods are accepted for DMN2028UFU-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2028UFU-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2028UFU-13?
DMN2028UFU-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2028UFU-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2028UFU-13?
For technical support, including DMN2028UFU-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2028UFU-13 requirements.
6.How does Aetrix verify that DMN2028UFU-13 is sourced from the original manufacturer or authorized distributors?
All DMN2028UFU-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2028UFU-13 meets industry standards.
7.What is the process for return or replacement of DMN2028UFU-13?
All DMN2028UFU-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2028UFU-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2028UFU-13 part is unused and in its original packaging.
Return procedure for DMN2028UFU-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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