My Inquiry
My Account
Diodes Incorporated DMN2028UFU-7
- Part No.:
- DMN2028UFU-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
DMN2028UFU-7.pdf
- Description:
- MOSFET 2N-CH 20V 7.5A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,988
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2028UFU-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2030-6 package, rated for 20V VDS, 20.2 mΩ RDS(ON) @ 4.5V VGS, and 7.5A continuous drain current at +25°C. It integrates gate protection diodes per channel and supports low-voltage logic-level drive down to 2.5V, enabling use in compact battery-pack load switching and power-path management.
For engineers reviewing the DMN2028UFU-7 datasheet, DMN2028UFU-7 pinout, DMN2028UFU-7 application, or DMN2028UFU-7 equivalent, key selection criteria include its dual-channel layout with independent gate terminals, ultra-low RDS(ON) at 2.5V–4.5V VGS, ESD-protected gates, and thermal performance on FR-4 with 2 oz copper (RθJA = 69°C/W under enhanced layout).
Technical Context
This dual MOSFET implements two fully isolated N-channel silicon devices sharing a common source configuration in a single U-DFN2030-6 die. Each channel features a gate threshold voltage of 0.5–1.0 V and supports fast switching with tD(ON) = 53 ns and tF = 197 ns under standard test conditions (VDS = 10 V, ID = 1 A, RG = 6 Ω).
The device uses trench-gate process technology to achieve low input capacitance (Ciss = 887 pF) and low gate charge (Qg = 10 nC @ 4.5 V), enabling efficient operation in high-frequency DC-DC converters and USB-C power delivery path control where gate drive strength and switching loss are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - Supports 3.3 V–12 V system rails without avalanche stress in typical load-switch applications. |
| RDS(ON) @ 4.5 V | 15.3–20.2 mΩ - Enables ≤75 mW conduction loss at 7.5 A, suitable for thermally constrained portable PCBs. |
| VGS(TH) | 0.5–1.0 V - Ensures reliable turn-on with 1.8 V/2.5 V microcontroller GPIOs without level-shifting. |
| Ciss | 887 pF - Reduces gate drive power requirement and improves switching efficiency above 500 kHz. |
| Qg @ 4.5 V | 10 nC - Allows full turn-on with <1 µC total gate charge, minimizing driver IC sizing and heat generation. |
| TJ Range | −55°C to +150°C - Qualified for automotive cabin and industrial ambient environments with derated current. |
Pinout & Package
Package: U-DFN2030-6 (2.0 mm × 3.0 mm × 0.6 mm), exposed thermal pad, RoHS-compliant "Green" molding compound (UL 94V-0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Channel 1 Gate | Independent control input for first N-MOSFET; ESD-protected, compatible with 1.8 V logic. |
| 2 (S1) | Channel 1 Source | Source terminal for Channel 1; internally connected to Pin 3 (S2) and thermal pad in standard layout. |
| 3 (S2) | Channel 2 Source | Source terminal for Channel 2; electrically tied to Pin 2 and thermal pad for low-inductance return path. |
| 4 (D1) | Channel 1 Drain | High-current output node for Channel 1; designed for direct connection to battery or power rail. |
| 5 (D2) | Channel 2 Drain | High-current output node for Channel 2; enables dual independent load switching or parallel current sharing. |
| 6 (G2) | Channel 2 Gate | Independent control input for second N-MOSFET; identical electrical specs to Pin 1. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5 V VGS | 23.5 mΩ max - Enables robust 7.0 A operation directly from 2.5 V MCU outputs without gate boosting. |
| ESD-Protected Gates | HBM ±2 kV - Eliminates need for external gate protection in handheld and wearables designs. |
| Ultra-Small Footprint | 2.0 mm × 3.0 mm - Saves >60% board area vs. SO-8 dual MOSFETs while maintaining thermal performance. |
| Low Qgd/Qgs Ratio | 1.8 nC / 1.3 nC = 1.38 - Improves hard-switching immunity and reduces Miller-induced shoot-through risk. |
Applications
| Battery Protection Circuit | USB-C Power Path Control |
|---|---|
|
Use Scenario: Dual-FET configuration in smart battery packs to isolate cells during overvoltage/overcurrent events and enable bidirectional charging control. IC Role / Device Role / Timing Role: Primary power switch for cell balancing and charge/discharge path isolation; operates in linear and saturated modes. Use Value: 20.2 mΩ RDS(ON) minimizes voltage drop across protection FETs, preserving battery runtime and state-of-charge accuracy. |
Use Scenario: Dual-channel load switch managing VBUS routing between upstream port (UFP) and downstream port (DFP) in USB-C DRP implementations. IC Role / Device Role / Timing Role: High-side power switch controlling 5 V/9 V/15 V/20 V VBUS paths; driven by USB PD controller GPIOs. Use Value: Independent gate control allows precise sequencing of power-up/down transitions, preventing bus contention and meeting USB-C specification timing windows. |
| Portable Medical Device Power Management | Industrial Sensor Node Load Switching |
|
Use Scenario: Isolating backup coin-cell supply from main Li-ion battery during sleep mode in wearable ECG monitors and glucose meters. IC Role / Device Role / Timing Role: Low-leakage load switch enabling <1 µA system standby current; gate threshold ensures clean turn-off at 1.8 V logic levels. Use Value: 1 µA IDSS at 20 V VDS and −55°C to +150°C rating support long-term reliability in clinical-grade portable equipment. |
Use Scenario: Enabling/disabling 3.3 V sensor rails (e.g., MEMS accelerometers, environmental sensors) in battery-powered IIoT nodes based on wake-up triggers. IC Role / Device Role / Timing Role: Low-RDS(ON) power switch controlled by microcontroller GPIO; fast tF = 197 ns ensures rapid sensor activation. Use Value: 10 nC Qg allows full turn-on within 1 µs using standard 10 mA GPIO drivers, reducing wake latency below 2 ms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2028UFDE-7 | Same die, but in U-DFN2020-6 (2.0 mm × 2.0 mm); RDS(ON) slightly higher (22.5 mΩ @ 4.5 V) due to smaller thermal pad area. | Higher thermal resistance (RθJA = 95°C/W) limits continuous current to 5.5 A on same PCB layout. | Select when board space is more constrained than thermal budget, and peak current ≤5.5 A. |
| SI2302CDS-T1-GE3 | Single-channel SOT-23; RDS(ON) = 35 mΩ @ 4.5 V; no integrated gate protection diodes; lower Qg (4.5 nC). | Requires two discrete devices and external ESD protection for dual-load function; larger footprint than U-DFN2030-6. | Select only if dual-channel integration is unnecessary and cost-per-channel is prioritized over board area and protection simplicity. |
Compared with DMN2028UFU-7, DMN2028UFDE-7 trades 1 mm² area reduction for ~11% higher conduction loss and reduced thermal headroom, while SI2302CDS-T1-GE3 requires duplication and external protection to replicate dual functionality-making DMN2028UFU-7 optimal for space-constrained, high-reliability dual-switch designs.
Availability
DMN2028UFU-7 is available at Aetrix Electronics and suitable for battery pack protection, USB-C power path control, and portable medical device power management requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMN2028UFU-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN2028UFU-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power switching in space-constrained portable and battery-powered systems.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
At TA = +70°C with standard FR-4 PCB (2 oz copper, minimum pad layout), the continuous drain current per channel is 6.0 A. This rating assumes steady-state thermal equilibrium and accounts for the device's RθJA = 144°C/W and PD = 0.9 W limit under those conditions.
Does DMN2028UFU-7 support reverse current blocking in source-to-drain direction?
No-the internal body diode conducts from source to drain when VS > VD. For reverse current blocking, external circuitry such as a second MOSFET in back-to-back configuration or dedicated ideal diode controllers is required. The device does not integrate reverse-blocking capability.
Is the thermal pad electrically connected to any internal node?
Yes-the exposed thermal pad (Pin #7, unmarked but centered on bottom side) is internally connected to the source terminals (Pins 2 and 3). It must be soldered to a PCB copper pour tied to system ground or source potential to ensure both thermal performance and electrical integrity.
Can DMN2028UFU-7 be used in linear (analog) regulation mode?
Yes-it is characterized for linear operation in the Safe Operating Area (SOA) graph (Figure 12), supporting DC operation up to 7.5 A at VDS ≤ 1.2 V at +25°C ambient. However, power dissipation must remain within PD = 1.8 W (enhanced layout) and junction temperature must stay ≤ +150°C.
DMN2028UFU-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A
- Rds On (Max) @ Id, Vgs:
- 20.2mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 887pF @ 10V
- Power - Max:
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2030-6 (Type B)
DMN2028UFU-7 FAQ
1.How can I place an order for DMN2028UFU-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2028UFU-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2028UFU-7 reliable?
The price and inventory of DMN2028UFU-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2028UFU-7 is usually 5 days.
3.What payment methods are accepted for DMN2028UFU-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2028UFU-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2028UFU-7?
DMN2028UFU-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2028UFU-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2028UFU-7?
For technical support, including DMN2028UFU-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2028UFU-7 requirements.
6.How does Aetrix verify that DMN2028UFU-7 is sourced from the original manufacturer or authorized distributors?
All DMN2028UFU-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2028UFU-7 meets industry standards.
7.What is the process for return or replacement of DMN2028UFU-7?
All DMN2028UFU-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2028UFU-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2028UFU-7 part is unused and in its original packaging.
Return procedure for DMN2028UFU-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2028UFU-7 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
