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Diodes Incorporated DMN2028UVT-7
- Part No.:
- DMN2028UVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2028UVT-7.pdf
- Description:
- MOSFET N-CH 20V 6.2A TSOT-26
- Quantity:
- Payment:
- Shipping:
Inventory:77
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Product details
Overview
DMN2028UVT from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 20 V V(BR)DSS, 24 mΩ RDS(ON) at 4.5 V VGS, and 6.2 A continuous drain current at +25°C. It targets DC-DC converters and backlighting circuits where low conduction loss and fast switching are critical.
For engineers reviewing the DMN2028UVT datasheet, DMN2028UVT pinout, DMN2028UVT application, or DMN2028UVT equivalent, key selection criteria include its TSOT26 package footprint, gate threshold voltage range (0.4–1.5 V), thermal resistance (76 °C/W with thermal vias), and body diode forward voltage (1.2 V at 1.3 A).
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 8.3 nC) and fast switching dynamics (tD(ON) = 13.2 ns, tD(OFF) = 65 ns). Its design supports logic-level drive compatibility down to 2.5 V VGS, enabling direct interface with 3.3 V microcontrollers.
The device integrates a monolithic body diode with 1.5 A maximum forward current rating and exhibits stable on-resistance over temperature (±15% variation from −55°C to +150°C at fixed VGS). Its TSOT26 package enables compact layout in space-constrained power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20 V - Maximum drain-source blocking voltage before avalanche breakdown; defines safe operating range in 12 V and 19 V input systems. |
| RDS(ON) | 24 mΩ @ 4.5 V VGS - Conduction loss of 0.93 W at 6.2 A; enables >92% efficiency in 5 V output buck converters. |
| ID (Continuous) | 6.2 A @ TA = +25°C - Sustained load current capability under standard PCB mounting; derates to ~3.8 A at +85°C ambient. |
| Qg | 8.3 nC - Total gate charge required for full turn-on; determines driver strength requirement and switching loss trade-off. |
| Ciss | 856 pF - Input capacitance at 10 V VDS; impacts gate drive loop stability and Miller effect during hard-switching. |
| VGS(TH) | 0.4–1.5 V - Gate threshold range ensures reliable turn-on with 1.8 V/3.3 V logic; avoids partial enhancement in noisy environments. |
| RθJA | 76 °C/W - Junction-to-ambient thermal resistance with 2 oz copper + thermal vias; enables 1.6 W power dissipation at +85°C ambient. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.90 mm × 1.60 mm × 0.90 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for drain current | Internally connected to exposed pad; must be soldered to large copper pour for thermal and electrical performance. |
| 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring <100 nA leakage; sensitive to ESD; requires gate resistor for ringing suppression. |
| 3 (Drain) | Main current-carrying output node | Connected to high-side switch node; handles pulsed currents up to 40 A (10 μs pulse, 1% duty). |
| 4 (Source) | Redundant source connection | Electrically tied to Pin 1; improves current sharing and thermal spreading in high-current layouts. |
| 5 (Drain) | Redundant drain connection | Electrically tied to Pin 3; reduces trace inductance and enhances high-frequency switching integrity. |
| 6 (Drain) | Third drain connection | Provides additional current path and mechanical anchoring; critical for thermal reliability in sustained 6.2 A operation. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5 V VGS | 32 mΩ - Enables use in battery-powered systems with weak gate drive, reducing dropout voltage in LDO replacements. |
| Ultra-low Qgd / Qg ratio | 3.1 nC / 8.3 nC = 37% - Minimizes Miller plateau duration, improving hard-switching robustness in synchronous rectifiers. |
| Body diode reverse recovery time | Not specified but implied by Crss = 78 pF and fast tF = 22 ns - Supports high-frequency (>1 MHz) flyback and boost topologies without external snubbers. |
| Green compound packaging | Br+Cl <1500 ppm, Sb <1000 ppm - Meets IPC-1752A Class 3 material declarations for automotive and industrial compliance reporting. |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Driving parallel strings of white LEDs in notebook displays using PWM dimming at 200 Hz–20 kHz. IC Role / Device Role / Timing Role: Low-side synchronous switch in boost converter output stage; commutates 1.2 A peak LED current per channel. Use Value: 24 mΩ RDS(ON) limits conduction loss to <35 mW per channel, enabling >94% power efficiency and eliminating heatsink requirements. | Use Scenario: Controlling 5–20 V power path between USB-C port and system rail in portable devices. IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS with controlled slew rate; supports hot-plug detection and overcurrent shutdown. Use Value: 0.4–1.5 V VGS(TH) ensures clean turn-on with 3.3 V GPIO; 40 A pulsed rating withstands inrush during cable insertion. |
| Point-of-Load DC-DC Converter | Industrial Sensor Power Sequencer |
Use Scenario: High-density 12 V to 3.3 V buck converter delivering 5 A to FPGA I/O banks in edge computing modules. IC Role / Device Role / Timing Role: High-side power switch in integrated power stage; operates at 500 kHz with 4.5 V gate drive. Use Value: 8.3 nC Qg allows efficient driving with 1 Ω gate resistor; 76 °C/W RθJA sustains 1.2 W loss at +70°C board temperature. | Use Scenario: Sequencing 3.3 V, 5 V, and 12 V rails for analog sensor front-ends in factory automation nodes. IC Role / Device Role / Timing Role: Discrete power switch enabling staggered startup via microcontroller GPIO control. Use Value: TSOT26 footprint fits tight 2.5 mm × 2.5 mm routing zones; 20 V rating covers all common industrial supply rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2028LVT-7 | Same die, different marking; identical RDS(ON), Qg, and thermal specs; same TSOT26 package. | No functional difference; used interchangeably in production; differs only in date code and internal lot tracking. | Select when sourcing from alternate Diodes Incorporated wafer lots or for BOM flexibility across dual part numbers. |
| AO3400 | Higher RDS(ON) (28 mΩ @ 4.5 V), higher Qg (12 nC), larger TSOP-6 footprint (3.05 mm × 1.65 mm). | Lower efficiency in high-current apps; requires larger PCB area; less suitable for ultra-thin designs. | Choose only if DMN2028UVT is unavailable; verify layout clearance and thermal margin due to 30% higher conduction loss. |
Compared with DMN2028LVT-7, the DMN2028UVT offers identical electrical and thermal performance with no design impact; versus AO3400, it delivers lower conduction loss, faster switching, and superior board-space efficiency in thin-profile power stages.
Availability
DMN2028UVT is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and USB-C power delivery circuits requiring stable component supply and long-term manufacturability.
Supply support for DMN2028UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN2028UVT belongs to Diodes' "UVT" logic-level MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in portable and industrial equipment.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN2028UVT has a rated junction temperature range of −55°C to +150°C. For continuous operation, the absolute maximum TJ is 150°C. Derating is required above +85°C ambient; with thermal vias and 2 oz copper, it sustains 6.2 A up to +70°C board temperature before reaching TJ = 150°C.
Is the body diode suitable for synchronous rectification?
Yes-the integrated body diode supports bidirectional current flow with 1.5 A maximum forward current and 1.2 V VF at 1.3 A. While not optimized for ultra-fast recovery like dedicated Schottky diodes, its Crss = 78 pF and fast tF = 22 ns enable use in ≤500 kHz synchronous buck topologies without significant reverse recovery loss.
Can DMN2028UVT replace DMN2028LVT-7 in existing designs?
Yes-DMN2028UVT and DMN2028LVT-7 share identical electrical specifications, thermal characteristics, pinout, and package dimensions. They differ only in internal lot coding and date marking; no layout, firmware, or thermal redesign is needed for substitution.
What is the recommended PCB pad layout for thermal performance?
Diodes recommends using the AP02001 pad layout: 1.6 mm × 1.0 mm exposed pad with 9 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground plane. This achieves the 76 °C/W RθJA rating; omitting vias degrades thermal resistance to 105 °C/W, limiting usable current by ~35%.
DMN2028UVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 856 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
DMN2028UVT-7 FAQ
1.How can I place an order for DMN2028UVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2028UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2028UVT-7 reliable?
The price and inventory of DMN2028UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2028UVT-7 is usually 5 days.
3.What payment methods are accepted for DMN2028UVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2028UVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2028UVT-7?
DMN2028UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2028UVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2028UVT-7?
For technical support, including DMN2028UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2028UVT-7 requirements.
6.How does Aetrix verify that DMN2028UVT-7 is sourced from the original manufacturer or authorized distributors?
All DMN2028UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2028UVT-7 meets industry standards.
7.What is the process for return or replacement of DMN2028UVT-7?
All DMN2028UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2028UVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2028UVT-7 part is unused and in its original packaging.
Return procedure for DMN2028UVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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