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Diodes Incorporated DMN2029USD-13
- Part No.:
- DMN2029USD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN2029USD-13.pdf
- Description:
- MOSFET 2N-CH 20V 5.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:12,783
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Product details
Overview
DMN2029USD-13 from Diodes Incorporated is a 20V dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 5.8A continuous drain current at VGS = 4.5V, with RDS(on) = 25 mΩ (max), and qualified to AEC-Q101 for automotive-grade reliability. It serves as a synchronous rectifier or power switch in high-efficiency DC-DC converters and backlighting circuits.
For engineers reviewing the DMN2029USD-13 datasheet, DMN2029USD-13 pinout, DMN2029USD-13 application, or DMN2029USD-13 equivalent, key selection criteria include its dual-channel SO-8 layout, low 2.5V turn-on capability, 1171 pF input capacitance, fast 16.5 ns turn-on delay, and AEC-Q101 qualification for automotive power management designs.
Technical Context
This dual MOSFET integrates two independent N-channel devices in a single SO-8 footprint, sharing no internal connection between channels-confirmed by the discrete equivalent circuit diagram showing isolated D1/S1/G1 and D2/S2/G2 terminals. Each channel supports 20V VDSS, ±8V VGSS, and operates down to 2.5V gate drive.
Thermal performance is defined for two mounting conditions: 115°C/W RθJA on standard FR-4 (2 oz Cu), and 95°C/W with 1-inch² copper pad. Dynamic parameters-including 10.4 nC total gate charge at 4.5V, 2.3 nC Qgd, and 7.5 ns body diode trr-are specified at VDS = 10V, enabling accurate loss modeling in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage per channel; suitable for 12V rail switching and USB PD auxiliary power paths |
| RDS(on) @ 4.5V | 25 mΩ max - Enables <150 mW conduction loss at 5.8A; critical for thermally constrained DC-DC phases |
| ID continuous | 5.8 A @ TA = +25°C - Validated thermal limit with standard PCB layout; derates to 4.7A at +70°C |
| Ciss | 1171 pF - Determines gate drive strength requirement; impacts switching loss in 500 kHz–1 MHz converters |
| tD(on) | 16.5 ns - Short turn-on delay enables precise timing control in synchronous rectification and phase-shifted topologies |
| Qg @ 4.5V | 10.4 nC - Defines minimum gate driver current (e.g., 1 A peak needed for 10 ns rise time) |
| AEC-Q101 | Qualified - Confirmed reliability for automotive infotainment, body control modules, and ADAS power supplies |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 3.95 mm × 4.95 mm body, 1.27 mm pitch). Pin 1 marked with dot; pin numbering follows standard SO-8 counterclockwise sequence from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input; requires dedicated gate resistor and driver path to avoid cross-talk |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; electrically isolated from S2 unless externally tied |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switching node; shares thermal pad with D2 but not electrically connected |
| 4 (D2) | Drain of Channel 2 | Second independent drain terminal; used for complementary switching or dual-phase output |
| 5 (S2) | Source of Channel 2 | Separate source return; enables floating-source configurations such as high-side drivers with bootstrap gate drive |
| 6 (G2) | Gate of Channel 2 | Fully independent gate; no internal coupling to G1-supports asynchronous or interleaved control |
| 7, 8 (Thermal Pad) | Exposed Drain Tie | Internally connected to both D1 and D2; must be soldered to PCB ground or power plane for thermal and EMI performance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 2.5V | 35 mΩ max - Enables operation from 3.3V logic rails without level-shifting in portable power stages |
| Fast switching speed | 16.5 ns tD(on), 53.5 ns tf - Reduces transition losses in high-frequency (>1 MHz) point-of-load regulators |
| Low input capacitance | 1171 pF Ciss - Lowers gate drive power and improves EMI behavior versus comparable 20V duals |
| AEC-Q101 qualification | Stress-tested per automotive temperature, humidity, and HTRB requirements - eliminates requalification for Tier-1 BOMs |
| Green, lead-free construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets EU ELV and China RoHS compliance mandates |
Applications
| Automotive Body Control Module | Laptop Backlight Inverter |
|---|---|
Use Scenario: Driving LED strings and solenoids in door lock actuators and interior lighting via 12V battery-supplied PWM outputs. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling parallel LED banks and resistive loads with independent enable timing. Use Value: 25 mΩ RDS(on) minimizes heat buildup in sealed enclosures; AEC-Q101 rating ensures 15-year field reliability under thermal cycling. | Use Scenario: Synchronous rectification in boost converter powering CCFL or white LED backlight arrays in 15.6″ notebook displays. IC Role / Device Role / Timing Role: Dual N-channel configured as active clamp and rectifier pair operating at 600 kHz with 50 ns dead-time control. Use Value: 7.5 ns body diode trr and 2.3 nC Qgd reduce shoot-through risk and improve efficiency over discrete diode solutions. |
| Industrial DC-DC POL Converter | USB-C Power Delivery Auxiliary Switch |
Use Scenario: 5V-to-3.3V/1.8V point-of-load regulation in programmable logic controllers with tight thermal budgets. IC Role / Device Role / Timing Role: Dual-phase high-side switch implementing interleaved buck topology with shared controller feedback loop. Use Value: 95°C/W RθJA with enhanced copper pad allows >3A/channel operation without heatsink in 2-layer industrial PCBs. | Use Scenario: VBUS path switching and reverse-current protection in USB-C port controllers supporting 20V/5A PD3.0 profiles. IC Role / Device Role / Timing Role: Independent channel used for forward VBUS pass and reverse-blocking function with independent gate control. Use Value: 20V VDSS and 35 mΩ RDS(on) at 2.5V gate drive support direct MCU GPIO control without external level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2029LSD-13 | Same die, thinner SO-8 package (1.05 mm height vs. 1.75 mm); identical RDS(on), Qg, and ratings | Preferred for ultra-low-profile designs (e.g., slim smartphones); thermal pad soldering process differs slightly | Select when board height <1.1 mm is mandatory; verify reflow profile compatibility with thinner mold compound |
| SI2302DS-T1-GE3 | Single-channel 20V N-MOSFET; RDS(on) = 35 mΩ @ 4.5V; no AEC-Q101 qualification; smaller SOT-23 package | Requires two devices and extra PCB area; lacks automotive qualification and dual-channel timing alignment | Only acceptable for cost-sensitive, non-automotive consumer applications where space permits discrete duplication |
Compared with DMN2029LSD-13, the DMN2029USD-13 offers superior thermal dissipation due to taller package and larger thermal pad contact area; versus SI2302DS-T1-GE3, it delivers true dual-channel synchronization, AEC-Q101 assurance, and 30% lower RDS(on) at same VGS, enabling higher efficiency in compact power stages.
Availability
DMN2029USD-13 is available at Aetrix Electronics and suitable for automotive body control modules, laptop backlight inverters, and industrial DC-DC POL converters requiring stable component supply, AEC-Q101 compliance, and dual-channel thermal co-location.
Supply support for DMN2029USD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the Philippines.
The DMN2029USD-13 belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power conversion in automotive and portable electronics where low RDS(on), fast switching, and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum safe operating junction temperature for DMN2029USD-13?
The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Continuous operation above +125°C requires derating of ID and PD per Figure 4 and Figure 6. The device achieves full-rated 5.8A only up to +25°C ambient; at +70°C ambient, continuous current drops to 4.7A with standard PCB layout.
Can DMN2029USD-13 be used in high-side switch configuration?
Yes-each channel supports high-side operation when paired with appropriate gate driving (e.g., bootstrap or isolated driver). The 20V VDSS and 2.5V VGS(th) min allow reliable turn-on with 3.3V or 5V logic, and the isolated gate terminals prevent channel crosstalk during floating-source switching.
Is the thermal pad (pins 7–8) electrically connected to the drains?
Yes-the exposed thermal pad is internally bonded to both D1 and D2 terminals, as confirmed in the mechanical data section and package outline. It must be soldered to a PCB copper pour tied to the drain net (not ground) to maintain electrical integrity and maximize thermal transfer.
Does DMN2029USD-13 support 100% duty cycle operation?
Yes-its continuous drain current rating (5.8A at +25°C) applies under steady-state DC conditions. However, thermal management is critical: with RθJA = 115°C/W on standard FR-4, even 2A load generates ~50°C junction rise; forced airflow or enhanced copper is required for sustained 100% duty at >3A.
DMN2029USD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1171pF @ 10V
- Power - Max:
- 1.2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN2029USD-13 FAQ
1.How can I place an order for DMN2029USD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2029USD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2029USD-13 reliable?
The price and inventory of DMN2029USD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2029USD-13 is usually 5 days.
3.What payment methods are accepted for DMN2029USD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2029USD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2029USD-13?
DMN2029USD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2029USD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2029USD-13?
For technical support, including DMN2029USD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2029USD-13 requirements.
6.How does Aetrix verify that DMN2029USD-13 is sourced from the original manufacturer or authorized distributors?
All DMN2029USD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2029USD-13 meets industry standards.
7.What is the process for return or replacement of DMN2029USD-13?
All DMN2029USD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2029USD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2029USD-13 part is unused and in its original packaging.
Return procedure for DMN2029USD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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