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Diodes Incorporated DMN2029UVT-13
- Part No.:
- DMN2029UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2029UVT-13.pdf
- Description:
- MOSFET N-CH 6.8A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:7,507
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Product details
Overview
DMN2029UVT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V VDSS, 24 mΩ RDS(ON) at VGS = 4.5V, and 6.8A continuous drain current at TA = +25°C. It serves as a high-efficiency synchronous rectifier or load switch in low-voltage DC-DC converters and backlight power stages.
For engineers reviewing the DMN2029UVT-13 datasheet, DMN2029UVT-13 pinout, DMN2029UVT-13 application, or DMN2029UVT-13 equivalent, key selection criteria include its low RDS(ON) at 2.5V gate drive, fast switching (tF = 433 ns), and thermal resistance of 74°C/W on 2oz copper with vias - critical for compact power management designs.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining controlled gate charge (Qg = 7.1 nC) and low output capacitance (Coss = 78 pF). Its VGS(TH) range (0.4–1.5 V) enables reliable turn-on with logic-level drivers down to 2.5V.
The device integrates a body diode with VSD = 0.65–1.2 V at IS = 1.3 A and tRR = 245 ns, supporting efficient freewheeling in buck and boost topologies. Thermal design is enabled by RθJC = 15°C/W and validated junction-to-ambient performance under two PCB layout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(ON) | 24 mΩ @ VGS = 4.5V, ID = 6.2A - Enables <150 mW conduction loss at 6 A in 12V input buck converters |
| ID (continuous) | 6.8 A @ TA = +25°C - Supports >5 W power delivery in space-constrained TSOT26 footprint |
| Qg | 7.1 nC - Reduces gate drive power and enables >1 MHz switching with standard 5V PWM controllers |
| Ciss | 646 pF - Limits Miller-induced shoot-through risk in half-bridge layouts |
| tF | 433 ns - Minimizes switching transition losses during turn-off in high-frequency SMPS |
| RθJA | 74°C/W - Achieved with 2oz copper + thermal vias; allows ~1.7 W dissipation before TJ exceeds 150°C |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common return path for drain current; internally connected to exposed pad for thermal conduction |
| 2 (G) | Gate | Control terminal; threshold voltage 0.4–1.5 V enables direct interface with 2.5V/3.3V logic |
| 3 (S) | Source | Dual-source configuration improves current sharing and reduces package inductance |
| 4 (D) | Drain | Main power output node; connected to internal die top metallization and exposed pad thermal slug |
| 5 (D) | Drain | Second drain terminal; parallel connection lowers RDS(ON) and enhances thermal spreading |
| 6 (D) | Drain | Third drain terminal; completes 3× drain / 2× source / 1× gate layout for optimized power density |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V | 32 mΩ - Enables use with battery-powered microcontrollers lacking 5V GPIO rails |
| Ultra-low Qgd/Qg ratio | 0.1 - Reduces Miller plateau duration and improves hard-switching robustness |
| Fast body diode recovery | tRR = 245 ns - Lowers reverse recovery loss in synchronous rectification mode |
| Thermally enhanced layout | Exposed drain pad + 3 drain pins - Delivers 1.7 W power dissipation capability on standard FR-4 |
| Green compound & lead-free finish | UL 94V-0, <900 ppm Br/Cl, <1000 ppm Sb - Complies with automotive and medical environmental mandates |
Applications
| DC-DC Buck Converter | LED Backlight Driver |
|---|---|
Use Scenario: Step-down regulation from 12 V to 5 V/3.3 V in portable industrial HMIs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500 kHz fixed-frequency buck controller IC. Use Value: 24 mΩ RDS(ON) cuts conduction loss by 35% vs. legacy 38 mΩ MOSFETs, extending battery runtime. |
Use Scenario: Constant-current LED string control in automotive instrument clusters. IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating 200 mA per channel at 2 kHz. Use Value: Fast 433 ns fall time ensures precise dimming resolution without LED current overshoot. |
| USB-C Power Delivery Sink | Load Switch for IoT Sensor Node |
Use Scenario: Input protection and inrush limiting in 20 V/3 A USB PD 3.0 receiver modules. IC Role / Device Role / Timing Role: Hot-swap FET placed between connector and buck converter input. Use Value: 6.8 A rating and 20 V VDSS support full PD3.0 specification with margin for transient surges. |
Use Scenario: Controlled power gating of BLE SoC and environmental sensors in battery-powered edge nodes. IC Role / Device Role / Timing Role: Logic-level load switch enabling <1 μA off-state leakage and <100 μs wake-up latency. Use Value: 1 μA IDSS and 0.7 V VGS(TH) typical ensure reliable turn-off and minimal standby drain. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2029LVT-7 | Same die, but in SOT-23-3 package with single drain/source pins; RθJA = 109°C/W (no thermal vias) | Limited to ≤0.7 W power dissipation; unsuitable for >3 A continuous loads without forced air | Select when board space is constrained and thermal budget permits lower current operation |
| AO3400A | Higher RDS(ON) (28 mΩ @ 4.5V), larger Qg (13 nC), no specified tRR or Coss data | Slower switching and higher gate drive loss; not recommended for >1 MHz or tight EMI-critical designs | Choose only for cost-sensitive, non-high-frequency applications where thermal margin is ample |
Compared with DMN2029LVT-7 and AO3400A, the DMN2029UVT-13 delivers superior thermal performance (74 vs. 109°C/W), lower switching loss (Qg 7.1 vs. 13 nC), and verified body diode recovery - making it optimal for high-density, high-efficiency power stages.
Availability
DMN2029UVT-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and USB-C power delivery systems requiring stable component supply across production lifecycles.
Supply support for DMN2029UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN2029UVT belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level MOSFET" product line, engineered specifically for high-efficiency, space-constrained power management in portable, automotive, and industrial equipment.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN2029UVT-13 supports 5.5 A continuous drain current at TA = +70°C with the recommended 2oz copper PCB layout and thermal vias. This derating reflects its RθJA = 74°C/W and 150°C maximum junction temperature, ensuring safe operation in enclosed industrial enclosures without active cooling.
Does this MOSFET have avalanche rating?
No, the DMN2029UVT-13 is not rated for repetitive avalanche energy (EAS). Its absolute maximum ratings specify only unclamped inductive switching limits via pulsed drain current (IDM = 40 A, 10 μs), and the datasheet does not guarantee or characterize avalanche robustness. Designers must implement external clamping or snubbing for inductive load switching.
Can it be used in a high-side configuration with 5 V gate drive?
Yes - with VGS = 5 V, RDS(ON) remains ≤22 mΩ (within typ/max spec), and VGS(TH) max of 1.5 V ensures full enhancement. However, high-side use requires a gate driver capable of floating bias or bootstrap operation, as the source is not at ground potential.
What is the significance of the "UVT" suffix in the part number?
The "UVT" suffix denotes Diodes' Ultra-Low RDS(ON) trench MOSFET platform in TSOT26 packaging. It distinguishes this generation from earlier "LVT" (SOT-23-3) and "MVT" (SOT-26) variants, indicating optimized die structure, dual-source/dual-drain pinning, and enhanced thermal performance via exposed pad integration.
DMN2029UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.1 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 646 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN2029UVT-13 FAQ
1.How can I place an order for DMN2029UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2029UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2029UVT-13 reliable?
The price and inventory of DMN2029UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2029UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN2029UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2029UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2029UVT-13?
DMN2029UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2029UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2029UVT-13?
For technical support, including DMN2029UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2029UVT-13 requirements.
6.How does Aetrix verify that DMN2029UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN2029UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2029UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN2029UVT-13?
All DMN2029UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2029UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2029UVT-13 part is unused and in its original packaging.
Return procedure for DMN2029UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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