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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2029UVT-7

Name: DMN2029UVT-7
Brand: Diodes Incorporated
SKU: DMN2029UVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2029UVT-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN2029UVT-7.pdf

Description:: MOSFET N-CH 6.8A TSOT26

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN2029UVT from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V V_DSS, 24 mΩ R_DS(ON) at V_GS = 4.5V, and 6.8A continuous drain current at T_A = +25°C. It delivers low on-resistance and fast switching for high-efficiency DC-DC converters and power management functions in space-constrained portable electronics.

For engineers reviewing the DMN2029UVT datasheet, DMN2029UVT pinout, DMN2029UVT application, or DMN2029UVT equivalent, key selection criteria include its 2.5V logic-level gate drive capability, 7.1 nC total gate charge, 646 pF input capacitance, and thermal resistance of 74 °C/W under enhanced PCB layout - all critical for compact, thermally managed buck regulators and LED backlight drivers.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining controlled gate charge (Q_g = 7.1 nC) and fast switching (t_r = 139 ns, t_f = 433 ns). Its gate threshold voltage range (0.4–1.5 V) ensures reliable turn-on with 2.5V–4.5V microcontroller I/O.

The device integrates a body diode with V_SD = 0.65–1.2 V at I_S = 1.3 A and exhibits low reverse recovery charge (Q_RR = 148 nC), supporting synchronous rectification and flyback topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Supports input rails up to 18 V in 3.3 V/5 V system power stages.
R_DS(ON)	24 mΩ @ V_GS = 4.5V - Enables ≤150 mW conduction loss at 6.2 A in compact DC-DC output switches.
I_D (max)	6.8 A @ T_A = +25°C - Sustains peak load currents in single-phase POL converters with 2 oz copper and thermal vias.
Q_g	7.1 nC - Reduces gate driver power demand and enables >1 MHz switching with low-side gate resistors ≤6 Ω.
C_iss	646 pF - Limits Miller-induced shoot-through risk in half-bridge configurations with moderate dV/dt.
T_J range	−55 to +150 °C - Qualified for industrial and extended-temperature embedded power modules.

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), molded plastic with UL 94V-0 rating, tin-finished copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Common return path for drain current; tied to ground or low-side reference in buck/synchronous rectifier topologies.
2 (G)	Gate	Control terminal requiring <1.5 V threshold; driven directly by 2.5 V GPIO or dedicated gate driver IC.
3 (D)	Drain	High-side switching node; connects to input rail or inductor in step-down converters.
4 (D)	Drain	Internally paralleled with Pin 3 to reduce package inductance and improve current sharing in high-frequency operation.
5 (D)	Drain	Third drain connection enhancing thermal and electrical performance; used for PCB copper pour attachment in thermal pads.
6 (S)	Source	Second source terminal providing low-inductance return path; connected to ground plane via multiple vias for EMI reduction.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 2.5 V - eliminates need for level-shifting circuitry in 3.3 V MCU-controlled power stages.
Low R_DS(ON) × Q_g figure-of-merit	24 mΩ × 7.1 nC = 170 mΩ·nC - balances conduction and switching losses for optimal efficiency at 500 kHz–2 MHz.
Enhanced thermal dissipation	R_θJA = 74 °C/W with 2 oz copper + thermal vias - supports 1.7 W steady-state power in minimal board area.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - meets IPC-1752A environmental reporting requirements.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: Step-down regulation from 12 V to 5 V/3.3 V in portable medical monitors and handheld test equipment.

IC Role / Device Role: Low-side synchronous rectifier switch in integrated buck controller designs.

Use Value: 24 mΩ R_DS(ON) reduces conduction loss by 35% vs. comparable 30 mΩ MOSFETs, extending battery runtime by >8% at 4 A load.

Use Scenario: Constant-current dimming control for edge-lit LCD panels in automotive infotainment displays.

IC Role / Device Role: PWM-controlled current sink for white LED strings operating at 20–30 mA per channel.

Use Value: Fast 139 ns rise time enables precise 100–1000 Hz PWM dimming without visible flicker or current overshoot.

Power Management Unit (PMU)

Load Switch for USB Peripherals

Use Scenario: Independent power rail enable/disable in multi-rail FPGA or SoC carrier boards.

IC Role / Device Role: High-efficiency load switch with controlled inrush limiting via gate resistor tuning.

Use Value: 0.4–1.5 V V_GS(TH) ensures clean turn-on at 1.8 V logic levels, eliminating false triggering during brown-out conditions.

Use Scenario: Hot-swap protection and sequencing for USB-C peripheral ports in docking stations.

IC Role / Device Role: Reverse-current blocking switch between VBUS and downstream 5 V rail.

Use Value: Body diode forward voltage ≤1.2 V at 1.3 A allows bidirectional conduction during plug insertion while minimizing voltage drop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2029LVT-7	Same die, but in SOT-26 (non-TSOT) package; R_θJA = 109 °C/W (no thermal vias support); 0.7 W P_D.	Limited to lower-power applications (<2.5 A continuous) due to higher thermal resistance and no exposed drain pad.	Select when board space permits larger footprint and thermal performance is secondary to cost.
AO3400A	26 mΩ @ V_GS = 4.5V, Q_g = 12 nC, C_iss = 880 pF - higher switching loss and slower turn-off (t_d(off) = 14.5 ns vs. 1023 ns).	Less suitable for >1 MHz operation; requires stronger gate drive to achieve same efficiency.	Choose only if legacy qualification or second-source validation mandates AO34xx family compatibility.

Compared with DMN2029LVT-7, the DMN2029UVT delivers 32% lower thermal resistance and 2.4× higher power handling; versus AO3400A, it achieves 41% lower Q_g and 27% lower C_iss, enabling cleaner switching waveforms and reduced gate driver stress in high-frequency POL designs.

Availability

DMN2029UVT is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and load-switching applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for DMN2029UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN2029UVT belongs to Diodes' "Ultra-Low R_DS(ON) Logic-Level MOSFET" product line, engineered specifically for high-density, high-efficiency power conversion in portable, automotive, and industrial systems where thermal headroom and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN2029UVT supports 5.5 A continuous drain current at T_A = +70°C with standard FR-4 PCB layout (2 oz copper, thermal vias). This derating reflects its 74 °C/W thermal resistance and 150 °C maximum junction temperature, ensuring safe operation in enclosed enclosures without forced airflow.

Does this MOSFET require a gate resistor for stability?

Yes - a 2–6 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 38 pF) and PCB trace inductance. Without it, fast edges may induce oscillation during turn-on/turn-off, increasing EMI and dynamic losses in high-frequency switching applications.

Can DMN2029UVT be used in reverse-biased configurations?

No - the device is not rated for reverse-biased operation (V_DS < 0). Its body diode conducts only from source to drain (anode at S, cathode at D). For reverse-blocking or bidirectional current control, a complementary P-channel MOSFET or external diode must be added in series.

Is the TSOT26 package compatible with standard SMT reflow profiles?

Yes - the TSOT26 package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and withstands peak reflow temperatures up to 260°C. Its tin-finished leadframe ensures reliable solder wetting using standard SnPb or lead-free SAC305 profiles, provided preheat and soak zones comply with Diodes' recommended ramp rates.

DMN2029UVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 6.2A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.1 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 646 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN2029UVT-7 FAQ

1.How can I place an order for DMN2029UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2029UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2029UVT-7 reliable?

The price and inventory of DMN2029UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2029UVT-7 is usually 5 days.

3.What payment methods are accepted for DMN2029UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2029UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2029UVT-7?

DMN2029UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2029UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2029UVT-7?

For technical support, including DMN2029UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2029UVT-7 requirements.

6.How does Aetrix verify that DMN2029UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN2029UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2029UVT-7 meets industry standards.

7.What is the process for return or replacement of DMN2029UVT-7?

All DMN2029UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2029UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2029UVT-7 part is unused and in its original packaging.

Return procedure for DMN2029UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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