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Diodes Incorporated DMN2036UCB4-7
- Part No.:
- DMN2036UCB4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 4-XFBGA, WLBGA
- Datasheet:
-
DMN2036UCB4-7.pdf
- Description:
- MOSFET 2N-CH X2-WLB1616
- Quantity:
- Payment:
- Shipping:
Inventory:2,930
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Product details
Overview
DMN2036UCB4-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 1.6 mm × 1.6 mm X2-WLB1616-4 wafer-level chip-scale package, rated for 24 V VSSS, 36 mΩ RSS(ON) at VGS = 4.5 V and IS = 3.0 A, with 5.0 A continuous source current at TA = +25°C - deployed in battery protection circuits and load-switching paths where low on-resistance and ESD-hardened gate-source terminals are critical.
For engineers reviewing the DMN2036UCB4-7 datasheet, DMN2036UCB4-7 pinout, DMN2036UCB4-7 application, or DMN2036UCB4-7 equivalent, this page delivers verified package mapping, terminal roles, thermal resistance (86.68 °C/W), body diode forward voltage (0.8–1.2 V), and gate charge (12.6 nC) to support layout, thermal design, and switching loss estimation in portable power systems.
Technical Context
This MOSFET operates as a low-side switch with source-connected substrate and integrated body diode, optimized for unidirectional current flow in battery management ICs and discrete load switches. Its 0.5–1.3 V gate threshold voltage enables reliable turn-on from 3.3 V and 4.5 V logic rails, while the 2 kV HBM ESD rating eliminates need for external G-S protection diodes.
The X2-WLB1616-4 package uses SnAgCu solder balls and achieves 86.68 °C/W junction-to-ambient thermal resistance on FR-4 with 1-inch² copper pour. Dynamic parameters - including 183 ns turn-on delay, 738 ns turn-off delay, and 12.6 nC total gate charge - reflect its suitability for medium-frequency (<1 MHz) switching in space-constrained DC-DC and battery path control applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 24 V - Maximum blocking voltage across source-source terminals; defines upper limit of battery stack or input rail it can isolate. |
| RSS(ON) | 36 mΩ @ VGS = 4.5 V, IS = 3.0 A - Directly determines conduction loss (PCOND = I² × R) in load-switch operation. |
| IS (continuous) | 5.0 A @ TA = +25°C - Maximum steady-state current before thermal derating; requires PCB copper area to sustain. |
| Qg | 12.6 nC - Total gate charge required to fully switch device; used to calculate driver current and switching energy loss. |
| VGS(TH) | 0.5–1.3 V - Gate voltage range where channel begins conducting; ensures compatibility with 1.8 V and higher logic families. |
| VF(S-S) | 0.8–1.2 V @ IF = 3.0 A - Forward voltage of intrinsic body diode; impacts reverse-current path efficiency in back-to-back configurations. |
| RθJA | 86.68 °C/W - Junction-to-ambient thermal resistance on standard FR-4; sets temperature rise per watt dissipated at board level. |
Pinout & Package
Package: X2-WLB1616-4 - 1.6 mm × 1.6 mm wafer-level chip-scale package with four solder balls, moisture sensitivity level 1, and SnAgCu terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source 1 | Primary source terminal; electrically tied to substrate and internal body diode cathode; must connect to system ground or low-side return path. |
| G1 | Gate 1 | Control terminal for channel modulation; requires stable drive voltage ≥ VGS(TH); protected by built-in 2 kV HBM ESD diode to S1. |
| S2 | Source 2 | Secondary source terminal; paralleled internally with S1 to reduce package inductance and improve current sharing in high-di/dt switching. |
| G2 | Gate 2 | Redundant gate terminal; electrically identical to G1; used to lower gate loop inductance in high-frequency layouts or enable dual-driver routing. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in G-S ESD protection | 2 kV HBM rating eliminates need for external TVS or diode clamps in battery interface nodes. |
| Ultra-compact WLCSP | 1.6 mm × 1.6 mm footprint reduces PCB area by >70% vs. SO-8 or TSOP-6 packages in portable battery modules. |
| Low RSS(ON) at 3.7 V VGS | 33 mΩ @ VGS = 3.7 V, IS = 3.0 A enables robust switching even under Li-ion discharge voltage sag (3.6–3.0 V). |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and Diodes Inc.'s "Green" definition (<900 ppm Br+Cl, <1000 ppm Sb). |
| Thermally enhanced layout | Four-ball configuration with dual source/gate terminals improves heat spreading and reduces parasitic inductance in high-speed load switching. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Isolates main battery from system during overvoltage, overcurrent, or short-circuit events in smart phones and wearables. IC Role / Device Role / Timing Role: Low-side switch controlled by battery management IC (e.g., BQ297xx) to disconnect load within <100 µs after fault detection. Use Value: 36 mΩ RSS(ON) limits voltage drop to <180 mV at 5 A, preserving system brown-out margin during normal operation. |
Use Scenario: Enables/disables VBUS path in USB-C receptacles supporting 3 A/5 V or 3 A/9 V PD profiles. IC Role / Device Role / Timing Role: Discrete load switch replacing integrated PMIC FETs when higher current headroom or thermal isolation is needed. Use Value: Dual-source terminals (S1/S2) reduce bond-wire inductance, minimizing voltage overshoot during 10–90% VBUS transitions at 500 kHz switching. |
| Wireless Earbud Charging Case | Medical Patch Monitor Power Path |
|
Use Scenario: Controls charging current from USB input to internal Li-ion cell while preventing reverse leakage into dead battery. IC Role / Device Role / Timing Role: Back-to-back configured with second DMN2036UCB4-7 to block bidirectional current and enable true load disconnect. Use Value: 0.8–1.2 V body diode forward voltage ensures minimal dropout in reverse-path blocking mode without external Schottky. |
Use Scenario: Manages power routing between coin-cell backup and primary Li-Po battery in Class II medical telemetry devices. IC Role / Device Role / Timing Role: Low-leakage (≤1.0 µA ISSS) switch enabling >5-year shelf life with sub-µA standby current budgets. Use Value: 1.0 µA max zero-VGS source leakage preserves battery capacity during multi-month storage periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2045UFB-7 | RSS(ON) = 45 mΩ @ VGS = 4.5 V; larger 2.0 mm × 2.0 mm UFBGA package; 6.5 A IS. | Higher RSS(ON) increases conduction loss but supports higher peak current; better thermal mass for intermittent loads. | Select when board layout allows larger footprint and thermal budget exceeds 1.45 W sustained dissipation. |
| AO3414 | RSS(ON) = 44 mΩ @ VGS = 4.5 V; SOT-23 package; no integrated G-S ESD diode; 4.2 A IS. | Lacks on-chip ESD protection; requires external 2 kV HBM clamp; higher RθJA (~200 °C/W) limits power handling. | Choose only if cost sensitivity outweighs board space savings and ESD robustness requirements. |
Compared with DMN2036UCB4-7, DMN2045UFB-7 trades 25% higher on-resistance for greater thermal mass and current headroom, while AO3414 sacrifices ESD hardening and thermal performance for legacy SOT-23 compatibility - making DMN2036UCB4-7 optimal for ultra-compact, high-reliability battery path control.
Availability
DMN2036UCB4-7 is available at Aetrix Electronics and suitable for battery protection, USB-C load switching, wireless earbud charging cases, and medical patch monitor power path designs requiring stable component supply and guaranteed wafer-level packaging consistency.
Supply support for DMN2036UCB4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The DMN2036UCB4-7 belongs to Diodes' X2-WLB series of wafer-level MOSFETs, engineered specifically for space-constrained portable power management where low RSS(ON), ESD resilience, and thermal efficiency are prioritized over legacy package compatibility.
FAQ
What is the maximum safe operating junction temperature for DMN2036UCB4-7?
The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this temperature risks permanent parametric shift or catastrophic failure. Derating begins at +70°C ambient, where continuous source current drops from 5.0 A to 4.0 A due to thermal resistance limitations.
Can DMN2036UCB4-7 be used in a high-side switch configuration?
No - DMN2036UCB4-7 is an N-channel MOSFET with source tied to substrate and body diode oriented from source to drain. It lacks an isolated drain-substrate structure required for high-side operation. Use only in low-side or back-to-back configurations where source connects to ground or common reference.
Is the X2-WLB1616-4 package compatible with standard reflow profiles?
Yes - the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60-second duration). Its SnAgCu ball composition and 0.65 mm pitch align with industry-standard stencil and placement equipment.
Does DMN2036UCB4-7 require external gate resistors for EMI control?
Not strictly required, but recommended - the 12.6 nC gate charge and fast 278 ns rise time can generate high di/dt noise. A 5–10 Ω series gate resistor reduces ringing and EMI emissions without significantly impacting switching speed in typical 100–500 kHz load-switch applications.
DMN2036UCB4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 4-XFBGA, WLBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- 1.45W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-WLB1616-4
DMN2036UCB4-7 FAQ
1.How can I place an order for DMN2036UCB4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2036UCB4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2036UCB4-7 reliable?
The price and inventory of DMN2036UCB4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2036UCB4-7 is usually 5 days.
3.What payment methods are accepted for DMN2036UCB4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2036UCB4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2036UCB4-7?
DMN2036UCB4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2036UCB4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2036UCB4-7?
For technical support, including DMN2036UCB4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2036UCB4-7 requirements.
6.How does Aetrix verify that DMN2036UCB4-7 is sourced from the original manufacturer or authorized distributors?
All DMN2036UCB4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2036UCB4-7 meets industry standards.
7.What is the process for return or replacement of DMN2036UCB4-7?
All DMN2036UCB4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2036UCB4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2036UCB4-7 part is unused and in its original packaging.
Return procedure for DMN2036UCB4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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