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Diodes Incorporated DMN2040LTS-13

Part No.:
DMN2040LTS-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-TSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixDMN2040LTS-13.pdf
Description:
MOSFET 2N-CH 20V 6.7A 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,404

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Product details

Overview

DMN2040LTS-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSSOP-8L package, rated for 20 V VDSS, 6.7 A continuous drain current at 25°C, and 19 mΩ typical RDS(on) at VGS = 4.5 V. It features low gate threshold (0.5–1.2 V), fast switching (tD(on) = 5.2 ns), and AEC-Q101 qualification for automotive power management circuits.

For engineers reviewing the DMN2040LTS-13 datasheet, DMN2040LTS-13 pinout, DMN2040LTS-13 application, or DMN2040LTS-13 equivalent, key selection criteria include dual-channel RDS(on) matching, thermal resistance (RθJA = 140 °C/W), gate charge (Qg = 5.2 nC), and AEC-Q101 reliability validation for under-hood DC-DC and load-switching designs.

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices in a single TSSOP-8L thermally enhanced package, enabling compact half-bridge or dual-load configurations without cross-conduction risk. Its low 1.2 V max VGS(th) ensures reliable turn-on with 3.3 V logic-level drivers, while the 570 pF Ciss and 75 pF Crss support high-frequency PWM operation up to 1 MHz.

The device uses planar trench-gate technology optimized for low RDS(on) vs. temperature stability-RDS(on) increases only 1.6× from −55°C to +150°C at VGS = 4.5 V-and includes integrated body diodes with 0.7–1.2 V forward voltage at 1.7 A, suitable for synchronous rectification and bidirectional current paths.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20 V - Supports 12 V automotive rail systems with 67% headroom against transients.
RDS(on) @ VGS = 4.5 V19 mΩ typ - Enables ≤120 mW conduction loss per channel at 6 A DC load.
Qg5.2 nC - Allows efficient drive with <10 mA average gate current at 1 MHz PWM.
tD(on)5.2 ns - Minimizes shoot-through risk in half-bridge topologies with tight dead-time control.
RθJA140 °C/W - Limits junction rise to ≤125°C at 0.89 W dissipation on FR-4 PCB with minimum pad layout.
AEC-Q101 QualifiedValidated for automotive temperature cycling (−55°C to +150°C) and HTRB stress - required for engine control and ADAS power stages.

Pinout & Package

Package: TSSOP-8L (3.0 mm × 4.4 mm × 1.0 mm), molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3Source 1 (S1)Common source node for Channel 1; tied internally to Pin 4 in standard layout.
4Drain 1 (D1)High-side output terminal for Channel 1; electrically isolated from D2.
5, 6, 7Source 2 (S2)Common source node for Channel 2; independent of S1 for dual-load isolation.
8Drain 2 (D2)High-side output terminal for Channel 2; enables independent switching of two loads.
G1Gate 1Control input for Channel 1; requires separate gate resistor to prevent oscillation.
G2Gate 2Control input for Channel 2; fully independent timing and drive capability.

Key Features

FeatureDesign Value
Low RDS(on) matching≤10% inter-channel variation ensures balanced current sharing in parallel load control.
Logic-level gate driveVGS(th) max = 1.2 V - compatible with 3.3 V microcontrollers without level-shifting circuitry.
Fast switching with low QgdQgd = 1.25 nC - reduces Miller plateau time and improves EMI profile in high-dV/dt environments.
Integrated body diodeVSD = 0.7 V @ 1.7 A - supports freewheeling in buck converters and reverse-current blocking in USB PD power paths.

Applications

Automotive LED Headlamp DriverUSB-C Power Delivery Load Switch

Use Scenario: Dual-channel current regulation for high-beam/low-beam LED strings in modern vehicle lighting modules.

IC Role / Device Role / Timing Role: Dual N-MOSFET switch controlling independent LED channels with PWM dimming and short-circuit protection.

Use Value: Low RDS(on) minimizes thermal derating at 5 A/channel; AEC-Q101 qualification ensures 15-year field reliability under vibration and thermal cycling.

Use Scenario: Bidirectional 5–20 V load switching in USB-C port controllers managing power role swapping.

IC Role / Device Role / Timing Role: Dual-channel reverse-polarity and overcurrent protected path switch enabling Source/Sink reconfiguration.

Use Value: Matched RDS(on) ensures symmetric on-resistance in both directions; low Qg supports 300 kHz dynamic reconfiguration without gate driver saturation.

Industrial PLC Digital Output ModuleDC-DC Converter Synchronous Rectifier

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller output cards driving 24 V solenoids and indicators.

IC Role / Device Role / Timing Role: Dual-channel high-side switch with integrated current sensing feedback via RDS(on) monitoring.

Use Value: 6.7 A rating handles 2 A inductive loads with 3× surge margin; low leakage (<1 μA IDSS) prevents false triggering during sleep mode.

Use Scenario: Secondary-side synchronous rectification in 12 V input, 3.3/5 V output isolated flyback converters for telecom power supplies.

IC Role / Device Role / Timing Role: Dual N-MOSFET replacing Schottky diodes to reduce conduction loss and improve efficiency above 75% load.

Use Value: 19 mΩ RDS(on) cuts rectifier loss by >60% vs. 40 V/3 A Schottky; fast tf = 6.1 ns suppresses ringing during zero-cross transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2041LTS-13RDS(on) = 24 mΩ @ 4.5 V (vs. 19 mΩ); same package and pinout.Slightly higher conduction loss limits use in high-current (>5 A) continuous duty cycles.Select when cost sensitivity outweighs 260 mW/channel efficiency penalty at full load.
SI6926ADQ-T1-GE3Higher VDSS = 30 V; RDS(on) = 22 mΩ @ 4.5 V; Qg = 7.5 nC (vs. 5.2 nC).Better transient tolerance but slower switching and higher gate drive demand.Prefer for 24 V industrial systems where 30 V rating justifies added switching loss and driver complexity.

Compared with DMN2040LTS-13, DMN2041LTS-13 trades lower cost for reduced efficiency at high current, while SI6926ADQ-T1-GE3 offers wider voltage margin at the expense of increased gate charge and thermal overhead-making DMN2040LTS-13 optimal for space-constrained 12 V automotive and USB-C power switches requiring minimal drive strength and best-in-class RDS(on).

Availability

DMN2040LTS-13 is available at Aetrix Electronics and suitable for automotive LED drivers, USB-C power delivery load switching, and industrial PLC digital output modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN2040LTS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN2040LTS-13 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive body electronics, infotainment power management, and industrial control systems demanding high reliability and low RDS(on) in compact packages.

FAQ

What is the maximum continuous drain current per channel at 100°C ambient?

At TA = 100°C, the DMN2040LTS-13 delivers 3.2 A per channel (derated from 4.9 A at 70°C using RθJA = 140 °C/W and TJ(max) = 150°C). This assumes FR-4 PCB with minimum recommended copper pad area per datasheet Figure 11 transient thermal curve.

Does the device support bidirectional current flow between drains?

No-drains D1 and D2 are electrically isolated. Current flows only from drain to source in each channel. However, the integrated body diodes allow reverse current from source to drain (S→D), enabling freewheeling in inductive loads when the MOSFET is off.

Can DMN2040LTS-13 be used in linear (analog) regulator applications?

It is not recommended: the device lacks guaranteed Safe Operating Area (SOA) curves for linear mode, and its RDS(on) variation with temperature (±15% over −55°C to +125°C) introduces instability in precision analog biasing. Use dedicated LDOs or linear regulators instead.

Is the TSSOP-8L package lead-free and RoHS-compliant?

Yes-the DMN2040LTS-13 is lead-free by design and RoHS-compliant per EU Directive 2011/65/EU, with no intentionally added lead and "Green" molding compound meeting UL 94V-0 flammability rating. Moisture sensitivity level is rated at Level 1 per J-STD-020.

DMN2040LTS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-TSSOP (0.173", 4.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual) Common Drain
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
6.7A (Ta)
Rds On (Max) @ Id, Vgs:
26mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
5.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
570pF @ 10V
Power - Max:
890mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-TSSOP

DMN2040LTS-13 FAQ

1.How can I place an order for DMN2040LTS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2040LTS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2040LTS-13 reliable?

The price and inventory of DMN2040LTS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2040LTS-13 is usually 5 days.

3.What payment methods are accepted for DMN2040LTS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2040LTS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2040LTS-13?

DMN2040LTS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2040LTS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2040LTS-13?

For technical support, including DMN2040LTS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2040LTS-13 requirements.

6.How does Aetrix verify that DMN2040LTS-13 is sourced from the original manufacturer or authorized distributors?

All DMN2040LTS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2040LTS-13 meets industry standards.

7.What is the process for return or replacement of DMN2040LTS-13?

All DMN2040LTS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2040LTS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2040LTS-13 part is unused and in its original packaging.

Return procedure for DMN2040LTS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2040LTS-13 Tags

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