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Diodes Incorporated DMN2040UQ-7

Part No.:
DMN2040UQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMN2040UQ-7.pdf
Description:
MOSFET BVDSS: 8V~24V SOT23 T&R 3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,716

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Product details

Overview

DMN2040UQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in SOT23 package, rated for 20V VDSS, 25 mΩ RDS(ON) at VGS = 4.5V and 6.0A ID at TA = +25°C, designed for automotive power-management and general-purpose interfacing switches.

For engineers reviewing the DMN2040UQ datasheet, DMN2040UQ pinout, DMN2040UQ application, or DMN2040UQ equivalent, this part supports low-voltage DC-DC load switching, battery protection circuits, and automotive body electronics where AEC-Q101 qualification, low gate charge (7.5 nC), and fast switching (tF = 9.4 ns) are critical selection criteria.

Technical Context

This MOSFET operates as a single N-channel silicon switch with gate threshold voltage of 0.5–1.2 V, enabling direct drive from 3.3 V and 5 V microcontrollers. Its low RDS(ON) and 667 pF Ciss support high-efficiency, high-frequency switching in space-constrained automotive modules.

The device integrates a body diode with VSD = 0.7–1.2 V at IS = 1 A and exhibits robust thermal performance: RθJA = 92 °C/W on 1-inch2 copper, supporting continuous operation up to TJ = +150°C under defined PCB layout conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V - Maximum drain-source blocking voltage; suitable for 12 V automotive systems with transient margin.
RDS(ON) 25 mΩ @ VGS = 4.5 V, ID = 8.2 A - Enables <150 mW conduction loss at 6 A, reducing thermal stress in compact layouts.
Qg 7.5 nC - Low total gate charge minimizes driver power and enables efficient PWM control at >1 MHz frequencies.
tF 9.4 ns - Fast fall time reduces switching transition losses in high-speed load switching applications.
ID (max) 6.0 A @ TA = +25°C - Continuous current rating sufficient for automotive LED drivers and ECU power rails.
Ciss 667 pF - Input capacitance impacts gate drive strength requirements; compatible with standard logic-level drivers.
TJ range −55°C to +150°C - Full automotive temperature range compliance per AEC-Q101, validated across extreme thermal cycling.

Pinout & Package

Package: SOT23 - surface-mount plastic package with matte tin-annealed copper leadframe, moisture sensitivity level 1, UL 94V-0 rated molding compound, weight ≈ 0.008 g.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Current return path for channel conduction Connected to ground or low-side reference; body diode anode; requires low-impedance PCB trace for thermal and current handling.
2 (Gate) Control terminal for channel formation High-impedance input requiring <100 nA leakage; driven by MCU GPIO or dedicated gate driver; sensitive to ESD.
3 (Drain) Power output terminal Connects to load or supply rail; carries full switched current; thermally coupled to die via exposed pad (no internal thermal pad in SOT23).

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive use with PPAP support and IATF 16949 manufacturing; eliminates requalification effort for Tier 1 designs.
Low RDS(ON) at 2.5 V drive 33 mΩ @ VGS = 2.5 V - enables reliable turn-on from low-voltage MCUs and battery-backed controllers.
Low Ciss and Qgd Ciss = 667 pF, Qgd = 2.5 nC - reduces Miller effect and improves switching controllability in high-dV/dt environments.
Green, RoHS-compliant construction Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); fully compliant with EU RoHS 2015/863/EU and JIS C 0950.

Applications

Automotive Body Control Module (BCM) USB-C Power Delivery Load Switch

Use Scenario: Controlling power to door locks, interior lighting, and window lift motors in 12 V vehicle architectures.

IC Role / Device Role: Low-side load switch managing up to 6 A resistive/inductive loads with integrated body diode freewheeling.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; 25 mΩ RDS(ON) limits self-heating during extended duty cycles.

Use Scenario: Enabling/disabling VBUS power path in portable USB-C accessories with 3.3 V or 5 V logic control.

IC Role / Device Role: Single N-channel power switch placed between source and load, controlled by system MCU GPIO.

Use Value: 7.5 nC Qg allows clean turn-on/turn-off without external gate resistor tuning; SOT23 footprint saves board area in space-limited dongles.

Industrial Sensor Node Power Gating Smartphone Battery Protection Circuit

Use Scenario: Isolating sensor subsystems during sleep mode to reduce quiescent current in battery-powered IIoT nodes.

IC Role / Device Role: High-side or low-side power gate controlled by ultra-low-power MCU with 2.5 V–4.5 V GPIO.

Use Value: 33 mΩ RDS(ON) at VGS = 2.5 V ensures minimal voltage drop and leakage (<1 µA IDSS) preserves battery life over months.

Use Scenario: Secondary overcurrent protection switch placed between battery cell and system PMIC in smartphones.

IC Role / Device Role: Fast-acting current-limiting switch activated by fuel gauge or protection IC during fault events.

Use Value: 9.4 ns tF and 21 ns tD(OFF) enable sub-microsecond fault isolation; AEC-Q101 grade adds process consistency for high-volume mobile production.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2041UQ-7 Same SOT23 package, but P-channel; VDSS = −20 V, RDS(ON) = 32 mΩ @ VGS = −4.5 V Requires high-side configuration with inverted logic; not drop-in compatible for low-side use Select only when high-side switching topology and complementary drive are required.
NTMFS4C06NT1G SO-8FL package, 20 V, 3.2 mΩ RDS(ON) @ 4.5 V, higher current (27 A), no AEC-Q101 certification Higher power density but lacks automotive qualification; larger footprint and thermal mass Prefer for industrial non-automotive applications needing lower RDS(ON) and higher ID.

Compared with DMN2040UQ, DMN2041UQ enables high-side switching but requires redesign of gate drive and layout, while NTMFS4C06NT1G delivers superior conduction efficiency at the cost of automotive compliance and board space-making DMN2040UQ optimal for AEC-Q101–mandated, space-constrained low-to-mid power switching.

Availability

DMN2040UQ is available at Aetrix Electronics and suitable for automotive body electronics, USB-C accessory power management, and industrial sensor node power gating requiring stable component supply across multi-year production cycles.

Supply support for DMN2040UQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN2040UQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for reliable low-voltage power switching in harsh-temperature, high-reliability vehicle subsystems.

FAQ

Is DMN2040UQ suitable for high-side switching configurations?

No-DMN2040UQ is an N-channel MOSFET optimized for low-side switching. High-side use would require gate voltage boosted above the source potential, which is impractical in its SOT23 package without external charge pump circuitry. For high-side applications, Diodes offers complementary P-channel devices like DMN2041UQ.

What is the maximum safe operating junction temperature for continuous operation?

The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation up to this limit when mounted on a 1-inch² copper pad (RθJA = 92 °C/W). Derating is required above TA = +70°C per the datasheet's ID vs. TA curve, with 4.8 A maximum at +70°C ambient.

Does DMN2040UQ include integrated ESD protection on the gate?

Yes-the gate oxide is rated for ±12 V VGSS, and the device passes HBM ESD testing per AEC-Q101 requirements. However, it does not include on-chip Zener clamps; external gate resistors and TVS diodes are recommended in high-noise automotive environments per Diodes' application guidelines.

Can DMN2040UQ be used in DC-DC converter synchronous rectification?

No-it is not specified or characterized for synchronous rectifier operation. The body diode recovery time (tRR = 12 ns) and QRR = 3.4 nC are typical for switching, but lack the optimized reverse recovery profile and SOA derating required for high-frequency synchronous rectification in buck converters.

DMN2040UQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.5 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
667 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
800mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMN2040UQ-7 FAQ

1.How can I place an order for DMN2040UQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2040UQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2040UQ-7 reliable?

The price and inventory of DMN2040UQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2040UQ-7 is usually 5 days.

3.What payment methods are accepted for DMN2040UQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2040UQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2040UQ-7?

DMN2040UQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2040UQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2040UQ-7?

For technical support, including DMN2040UQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2040UQ-7 requirements.

6.How does Aetrix verify that DMN2040UQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN2040UQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2040UQ-7 meets industry standards.

7.What is the process for return or replacement of DMN2040UQ-7?

All DMN2040UQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2040UQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2040UQ-7 part is unused and in its original packaging.

Return procedure for DMN2040UQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2040UQ-7 Tags

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