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Diodes Incorporated DMN2040UVT-13
- Part No.:
- DMN2040UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2040UVT-13.pdf
- Description:
- MOSFET N-CH 20V 6.7A TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:2,183
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Product details
Overview
DMN2040UVT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V VDSS, 24 mΩ RDS(ON) @ 4.5V VGS, and 6.7A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and power management functions in space-constrained portable electronics.
For engineers reviewing the DMN2040UVT-13 datasheet, DMN2040UVT-13 pinout, DMN2040UVT-13 application, or DMN2040UVT-13 equivalent, key selection criteria include low gate charge (7.5 nC), fast switching (tF = 9.4 ns), thermal resistance (RθJA = 77 °C/W with thermal vias), and RoHS-compliant "Green" packaging for compact power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining controlled gate charge and output capacitance (Ciss = 667 pF, Coss = 91 pF). Its 0.4–1.5 V gate threshold voltage enables reliable turn-on with 2.5 V logic-level drive, supporting direct interface with modern microcontrollers and PMICs.
The device features a monolithic body diode with 0.7–1.2 V forward voltage at 1.3 A and 12 ns reverse recovery time, enabling synchronous rectification and flyback operation without external diode supplementation in low-voltage buck converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports input rails up to 18 V in USB PD, battery-powered, and 5 V/3.3 V system power stages |
| RDS(ON) | 24 mΩ @ 4.5 V - delivers <150 mW conduction loss at 6.2 A, critical for thermally limited PCB layouts |
| Qg | 7.5 nC - enables efficient 1–2 MHz switching with minimal gate driver power consumption |
| tF | 9.4 ns - reduces switching transition losses and EMI in high-frequency DC-DC regulators |
| RθJA | 77 °C/W - achieves 1.6 W power dissipation with thermal vias, suitable for 2 oz copper FR-4 boards |
| VGS(TH) | 0.4–1.5 V - ensures robust turn-on with 2.5 V GPIO or LDO outputs, eliminating level-shifter need |
| Ciss | 667 pF - balances gate drive strength and noise immunity in densely routed power ICs |
Pinout & Package
TSOT26 surface-mount package (2.9 × 2.8 × 0.95 mm) with exposed drain pad for thermal enhancement; 6-pin configuration with pin 1 marked by dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting 0–4.5 V logic-level signals; low input capacitance (667 pF) minimizes driver loading |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to ground or low-side return path in buck topologies |
| 3 (D) | Drain | Main current path output; connected to switch node in DC-DC converters; electrically tied to exposed pad |
| 4 (D) | Drain | Second drain connection - paralleled with Pin 3 to reduce package inductance and improve thermal spreading |
| 5 (S) | Source | Secondary source terminal - enhances current handling and reduces bond-wire resistance in high-pulse applications |
| 6 (G) | Gate | Redundant gate connection - improves gate drive integrity and reduces EMI susceptibility in noisy environments |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 2.5 V | 32 mΩ enables full-load operation with 2.5 V microcontroller I/O without gate boosting |
| Ultra-low Qgd/Qg ratio | 2.5/7.5 = 0.33 - suppresses Miller-induced shoot-through in half-bridge configurations |
| Thermally enhanced TSOT26 | Exposed drain pad lowers junction-to-board thermal resistance by ~25% vs standard SOT-26 |
| Halogen- and antimony-free | <900 ppm Br+Cl, <1000 ppm Sb - meets IPC-1752A Class 3 material declaration requirements |
| Moisture sensitivity Level 1 | No bake required before reflow - compatible with standard J-STD-020 assembly processes |
Applications
| USB-C Power Delivery Sink | Smartphone PMIC Load Switch |
|---|---|
Use Scenario: Low-side power path control for 5–20 V input, delivering up to 6.7 A to USB-C port controllers and Type-C CC logic. IC Role / Device Role: Load switch managing hot-plug sequencing and overcurrent protection via external current-sense resistor. Use Value: 24 mΩ RDS(ON) limits voltage drop to <160 mV at 6.7 A, preserving bus voltage margin for USB PD negotiation. | Use Scenario: Independent power rail enable for camera ISP, display backlight, or RF transceiver subsystems in mobile SoC designs. IC Role / Device Role: Single-FET load switch with integrated thermal shutdown behavior via RDS(ON) temperature coefficient. Use Value: 0.4–1.5 V VGS(TH) range ensures clean turn-on with 1.8 V/2.8 V PMIC GPIOs, avoiding partial conduction states. |
| Portable SSD Power Rail | Wireless Earbud Charging Case |
Use Scenario: High-efficiency 3.3 V/5 V buck converter primary-side switch in M.2 NVMe SSD enclosures powered from USB 3.x host ports. IC Role / Device Role: Synchronous rectifier FET operating at 1–1.5 MHz with 9.4 ns fall time to minimize dead-time losses. Use Value: 77 °C/W RθJA with thermal vias allows 1.6 W dissipation in 10 mm² board area - sufficient for 3 A continuous loads. | Use Scenario: Input protection and battery charging path isolation in compact TWS earbud charging cases using single-cell Li-ion batteries. IC Role / Device Role: Reverse-current blocking switch between USB input and linear charger IC, leveraging body diode forward voltage of 0.7 V. Use Value: 12 ns tRR and 3.4 nC QRR prevent voltage overshoot during dynamic load transitions, protecting sensitive charging ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041UVT-13 | Higher RDS(ON) (30 mΩ @ 4.5 V), same package and pinout | Slightly lower efficiency in high-current paths; identical thermal and drive requirements | Select when cost sensitivity outweighs 25% higher conduction loss at full load |
| AO3414 | Higher Qg (12 nC), higher RDS(ON) (35 mΩ @ 4.5 V), same TSOT26 footprint | Reduced switching efficiency above 500 kHz; requires stronger gate driver | Choose only if legacy qualification or second-source validation mandates Alpha & Omega parts |
Compared with DMN2040UVT-13, DMN2041UVT-13 trades 25% higher conduction loss for lower unit cost, while AO3414 increases gate drive demand and switching loss - making DMN2040UVT-13 optimal for thermally constrained, high-frequency power stages requiring minimal driver overhead.
Availability
DMN2040UVT-13 is available at Aetrix Electronics and suitable for USB-C power delivery systems, smartphone PMIC load switching, and portable SSD power rails requiring stable component supply, long-term lifecycle support, and RoHS-compliant "Green" packaging.
Supply support for DMN2040UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers across Asia, Europe, and the US, serving automotive, industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' "Ultra-Low RDS(ON) Logic-Level" product line, engineered specifically for high-density, high-efficiency power conversion in battery-powered and USB-powered electronics where thermal headroom and gate drive simplicity are critical.
FAQ
What is the maximum continuous drain current at +75°C ambient?
The DMN2040UVT-13 supports 5.3 A continuous drain current at +75°C ambient temperature under standard FR-4 board conditions (2 oz copper, thermal vias), per the Absolute Maximum Ratings table. This derating reflects thermal limitations rather than electrical failure - junction temperature remains within -55°C to +150°C operating range when power dissipation stays below 1.6 W.
Does this MOSFET require a gate resistor for stability in 1 MHz DC-DC applications?
A 1–5 Ω gate resistor is recommended to dampen ringing caused by gate loop inductance and Ciss/Crss interaction, especially when driving from low-impedance sources. The device's 1.2 Ω intrinsic gate resistance and 83 pF Crss make it susceptible to oscillation without proper layout and gate damping - verified in Diodes' application note AP02011 for TSOT26 MOSFETs in buck regulators.
Can the body diode be used for reverse polarity protection?
No - the body diode conducts from source to drain (forward-biased when source > drain), making it unsuitable for reverse polarity protection. For that function, the MOSFET must be placed in the high-side or configured as an ideal diode with external control. The DMN2040UVT-13's 1.2 A continuous body diode rating applies only to synchronous rectification or freewheeling paths, not input protection.
Is the TSOT26 package lead (Pb)-free and compatible with lead-free reflow profiles?
Yes - the DMN2040UVT-13 is fully RoHS 3 compliant (2015/863/EU) with no purposely added lead, and its tin-finished terminals meet JEDEC J-STD-020 moisture sensitivity Level 1. It is qualified for peak reflow temperatures up to 260°C and withstands standard Pb-free soldering profiles without delamination or voiding, as confirmed in Diodes' packaging reliability report PR-2018-042.
DMN2040UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 667 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN2040UVT-13 FAQ
1.How can I place an order for DMN2040UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2040UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2040UVT-13 reliable?
The price and inventory of DMN2040UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2040UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN2040UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2040UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2040UVT-13?
DMN2040UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2040UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2040UVT-13?
For technical support, including DMN2040UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2040UVT-13 requirements.
6.How does Aetrix verify that DMN2040UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN2040UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2040UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN2040UVT-13?
All DMN2040UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2040UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2040UVT-13 part is unused and in its original packaging.
Return procedure for DMN2040UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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