My Inquiry
My Account
Diodes Incorporated DMN2041LSD-13
- Part No.:
- DMN2041LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN2041LSD-13.pdf
- Description:
- MOSFET 2N-CH 20V 7.63A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,165
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2041LSD from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 20V V(BR)DSS, 28 mΩ RDS(on) at 4.5V VGS, and 7.63A continuous drain current at 25°C. It integrates two matched low-RDS(on) switches optimized for synchronous rectification and power-stage control in compact DC-DC converters.
For engineers reviewing the DMN2041LSD datasheet, DMN2041LSD pinout, DMN2041LSD application, or DMN2041LSD equivalent, key selection criteria include gate threshold voltage (0.5–1.2V), low input capacitance (550 pF), fast switching times (tD(on) = 4.69 ns), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET implements two independent N-channel silicon devices in a single SO-8 thermally enhanced plastic package, sharing no internal connection between channels. Each channel features low gate threshold (VGS(th) = 0.5–1.2 V), enabling direct drive from 3.3V or 5V logic controllers without level shifting.
The device supports high-frequency switching with total gate charge of 7.2 nC at 4.5V VGS and exhibits low reverse transfer capacitance (Crss = 81 pF), minimizing Miller-induced shoot-through risk in half-bridge configurations used in buck and boost regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20 V - Maximum blocking voltage per channel; suitable for 12V input rail systems with margin. |
| RDS(on) | 28 mΩ @ 4.5V VGS - Enables <150 mW conduction loss at 6A, critical for high-efficiency point-of-load converters. |
| ID max | 7.63 A @ 25°C - Continuous current rating per channel under standard FR-4 PCB mounting conditions. |
| Qg | 7.2 nC @ 4.5V - Low gate charge reduces driver power and enables >1 MHz switching without excessive gate drive loss. |
| Ciss | 550 pF - Input capacitance determines gate drive strength requirement and impacts turn-on delay stability. |
| VGS(th) | 0.5–1.2 V - Ultra-low threshold allows compatibility with low-voltage microcontrollers and PMICs. |
| PD | 1.16 W - Total power dissipation limit at 25°C ambient; defines thermal derating envelope for layout design. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), molded green plastic body, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-channel MOSFET; requires external gate resistor for EMI control. |
| 2 (S1) | Source of Channel 1 | Power return node for Channel 1; electrically isolated from S2 unless externally connected. |
| 3 (D1) | Drain of Channel 1 | Main current path output for Channel 1; bonded to exposed pad for thermal conduction in SO-8 variant. |
| 4 (D2) | Drain of Channel 2 | Main current path output for Channel 2; shares thermal pad with D1 in standard SO-8 footprint. |
| 5 (S2) | Source of Channel 2 | Power return node for Channel 2; fully isolated from S1 to support floating high-side or dual low-side topologies. |
| 6 (G2) | Gate of Channel 2 | Independent control input for second N-channel MOSFET; no internal coupling to G1. |
| 7, 8 (Exposed Pad) | Thermal & Electrical Common | Internally connected to both drains (D1/D2); must be soldered to PCB copper pour for thermal management and EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 2.5V VGS | 41 mΩ - Enables operation with 2.5V logic or battery-backed controllers while maintaining <250 mW loss at 5A. |
| Low input/output leakage | IDSS ≤ 1 μA, IGSS ≤ ±100 nA - Ensures minimal standby power loss in always-on power rails and battery management systems. |
| Fast switching speed | tD(on) = 4.69 ns, tf = 6.43 ns - Supports >2 MHz PWM frequencies in high-density POL converters with tight dead-time control. |
| AEC-Q101 qualified | Qualified for automotive temperature range (−55°C to +150°C) and stress testing - Validated for under-hood and ADAS power modules. |
Applications
| USB-C Power Delivery Controller | Automotive Body Control Module |
|---|---|
Use Scenario: Dual-path load switching for USB-C port power direction control with 5V/9V/15V/20V PD profiles. IC Role / Device Role / Timing Role: Dual low-side switch controlling VBUS discharge and source/sink path selection during PD contract negotiation. Use Value: 28 mΩ RDS(on) limits voltage drop to <170 mV at 6A, preserving PD voltage compliance; low Qg enables fast path reconfiguration within 100 μs. | Use Scenario: Power distribution to LED lighting clusters, window lift motors, and door lock actuators in 12V vehicle electrical architecture. IC Role / Device Role / Timing Role: Dual protected low-side driver replacing discrete FETs and current-sense resistors in centralized power distribution unit. Use Value: AEC-Q101 qualification ensures operation across −40°C to +125°C ambient; 20V rating covers load-dump transients up to 18V sustained. |
| Industrial PLC I/O Module | Server VRM High-Density Point-of-Load |
Use Scenario: Solid-state relay replacement for 24V DC digital output channels with diagnostic feedback capability. IC Role / Device Role / Timing Role: Dual-channel switched power output with integrated overcurrent detection via RDS(on) sensing. Use Value: Matched channel characteristics enable consistent trip thresholds; low VGS(th) allows direct interface with 3.3V FPGA I/O banks. | Use Scenario: Synchronous buck converter power stage for CPU/GPU core voltage regulation in 1U server platforms. IC Role / Device Role / Timing Role: Dual N-channel high- and low-side switch in single-package configuration for compact 3-phase interleaved VRM designs. Use Value: 550 pF Ciss and 81 pF Crss reduce gate drive losses and improve cross-conduction immunity at 1.2 MHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LSD-7 | Same die, identical electrical specs; differs only in tape-and-reel packaging (1,000 pcs vs. 2,500 pcs). | No functional difference; selected based on production lot sizing and inventory turnover requirements. | Choose -7 for prototyping or low-volume builds where smaller reels reduce WIP and storage cost. |
| SI6926ADQ-T1-GE3 | Higher RDS(on) (32 mΩ @ 4.5V), higher Qg (10.5 nC), same SO-8 package and 20V rating. | Limited to lower-frequency (<800 kHz) or lower-current (<5A) applications due to increased switching and conduction losses. | Select when legacy design reuse or distributor stock availability outweighs efficiency optimization needs. |
Compared with DMN2041LSD-7, the -13 offers better logistics scalability for high-volume manufacturing; versus SI6926ADQ-T1-GE3, it delivers 14% lower conduction loss and 31% lower gate drive energy, directly improving thermal headroom in space-constrained VRMs.
Availability
DMN2041LSD is available at Aetrix Electronics and suitable for USB-C power delivery systems, automotive body control modules, industrial PLC I/O modules, and server VRM point-of-load converters requiring stable component supply and AEC-Q101 compliance.
Supply support for DMN2041LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN2041LSD belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-density power conversion in automotive, industrial, and computing applications where low RDS(on), fast switching, and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN2041LSD has a specified operating junction temperature range of −55°C to +150°C. For continuous operation under full-rated current, thermal design must ensure TJ does not exceed +150°C, which typically requires ≥1 cm² of 2-oz copper on the drain pad with thermal vias to inner layers, especially at ambient temperatures above +85°C.
Is the exposed pad electrically connected internally?
Yes, the exposed pad (pins 7 and 8) is internally connected to both drain terminals (D1 and D2). It must be soldered to a PCB copper pour tied to the system ground or power return plane to meet thermal resistance specifications (RθJA = 107.4°C/W) and ensure safe power dissipation.
Can DMN2041LSD be used in a high-side switching configuration?
No - the DMN2041LSD contains two N-channel MOSFETs only, with sources isolated (S1 and S2). High-side switching requires either P-channel devices or N-channel devices with gate drive above the source potential; this part lacks integrated charge pump or bootstrap capability and is intended for low-side or synchronous rectifier use.
Does the device support paralleling of channels for higher current?
Channels are electrically isolated but thermally coupled via the shared drain pad. Paralleling is not recommended without individual current balancing (e.g., separate source resistors), as mismatched VGS(th) (0.5–1.2V) and RDS(on) tolerance can cause uneven current sharing and thermal runaway above 5A total per channel.
DMN2041LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 7.63A
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550pF @ 10V
- Power - Max:
- 1.16W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN2041LSD-13 FAQ
1.How can I place an order for DMN2041LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2041LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2041LSD-13 reliable?
The price and inventory of DMN2041LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2041LSD-13 is usually 5 days.
3.What payment methods are accepted for DMN2041LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2041LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2041LSD-13?
DMN2041LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2041LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2041LSD-13?
For technical support, including DMN2041LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2041LSD-13 requirements.
6.How does Aetrix verify that DMN2041LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMN2041LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2041LSD-13 meets industry standards.
7.What is the process for return or replacement of DMN2041LSD-13?
All DMN2041LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2041LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2041LSD-13 part is unused and in its original packaging.
Return procedure for DMN2041LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2041LSD-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
