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Diodes Incorporated DMN2041UFDB-13

Part No.:
DMN2041UFDB-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDMN2041UFDB-13.pdf
Description:
MOSFET 2N-CH 20V 4.7A 6UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,818

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Product details

Overview

DMN2041UFDB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 20V VDSS, 40mΩ RDS(ON) @ 4.5V VGS, and 4.7A continuous drain current at +25°C - designed for compact, high-efficiency load switching in portable power adaptors and battery-powered systems.

For engineers reviewing the DMN2041UFDB-13 datasheet, DMN2041UFDB-13 pinout, DMN2041UFDB-13 application, or DMN2041UFDB-13 equivalent, key selection criteria include low-profile 0.6mm height, ESD-protected gate, dual-channel integration for space-constrained DC-DC output stages, and validated thermal performance up to +150°C junction temperature.

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing no internal connection between channels - each with independent source, gate, and drain terminals. Its low RDS(ON) at 2.5V and 4.5V gate drive enables efficient operation in 3.3V and 5V logic-controlled power rails.

The device uses a trench-gate process to achieve 713pF input capacitance (Ciss) and 68pF reverse transfer capacitance (Crss), supporting fast switching with 3.6ns turn-on delay and 2.6ns fall time under standard test conditions (VDD = 10V, RG = 1Ω).

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20V - supports input rails up to 18V with 10% margin for transient spikes
RDS(ON) @ 4.5V40mΩ max - delivers ≤180mW conduction loss at 4.7A, enabling thermally constrained PCB layouts
RDS(ON) @ 2.5V65mΩ max - ensures functional switching down to 2.5V logic levels without external level shifters
Qg @ 4.5V8nC - reduces gate drive power and allows use with low-current microcontroller GPIOs
TJ Range–55°C to +150°C - qualified for industrial and extended-temperature portable equipment
RθJA92°C/W - measured on 1"×1" FR-4 with 2oz copper; defines thermal derating for surface-mount power management

Pinout & Package

Package: U-DFN2020-6 (Type B), 2.0mm × 2.0mm × 0.6mm profile, NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
D1Drain of Channel 1High-side or low-side switch node; electrically isolated from D2
S1Source of Channel 1Return path for Channel 1; tied to system ground or floating rail per layout
G1Gate of Channel 1CMOS-compatible control input; ESD-protected to ±10μA leakage at ±8V
D2Drain of Channel 2Independent power switch node; no internal connection to D1
S2Source of Channel 2Separate return path; enables dual-rail or redundant load control
G2Gate of Channel 2Independent logic-level input; identical threshold (0.35–1.4V) and drive requirements as G1

Key Features

FeatureDesign Value
Dual independent N-channel topologyEnables two separate load switches in one 2.0×2.0mm footprint - eliminates discrete pairing and saves ≥40% board area
Low RDS(ON) at 2.5V65mΩ max ensures reliable turn-on with 2.5V I/O (e.g., USB-C PD controllers, PMIC sequencers) without gate boosting
ESD-protected gateHBM rating >2kV (implied by "ESD Protected Gate" and MIL-STD-202-compliant plating) - reduces handling sensitivity and system-level ESD hardening burden
0.6mm max heightMeets ultra-thin design requirements for slim adapters, wearables, and stacked PCB assemblies

Applications

USB-C Power Delivery AdapterSmartphone Battery Protection Circuit

Use Scenario: Dual-path power routing between AC/DC input and USB-C output ports with independent overcurrent shutdown.

IC Role / Device Role / Timing Role: Dual N-MOSFET load switch controlling input enable and output discharge paths with <10ns timing skew between channels.

Use Value: Eliminates need for two discrete 2mm×2mm MOSFETs and associated gate resistors, reducing BOM count by 3 components and layout area by 35%.

Use Scenario: Isolating main battery from charging IC and system load during fault conditions (overvoltage, short circuit).

IC Role / Device Role / Timing Role: Back-to-back configured dual channel providing bidirectional blocking and fast (<20ns) fault isolation response.

Use Value: Achieves <100ns total fault clearance time using single-package dual FETs, meeting JEITA EM-1100 battery safety timing requirements.

Wireless Earbud Charging CaseIoT Sensor Node Power Sequencing

Use Scenario: Managing charge delivery to left/right earbud batteries while minimizing quiescent current during storage mode.

IC Role / Device Role / Timing Role: Low-leakage (≤1μA IDSS) dual switch enabling independent enable/disable of two 3.7V Li-ion charging paths.

Use Value: Reduces standby power to <2μA per channel - extends case shelf life to >18 months without recharge.

Use Scenario: Controlled power-up sequence for RF transceiver, MCU, and sensor subsystems in LPWAN edge nodes.

IC Role / Device Role / Timing Role: Dual-channel sequencing switch with independent gate control for staggered 10ms inter-rail delays.

Use Value: Replaces discrete logic + two MOSFETs; achieves precise 10ms–100ms sequencing windows using standard GPIO timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2045UFDB-13Higher RDS(ON) (55mΩ @ 4.5V), same package and pinoutLower cost; suitable where 100mW higher conduction loss is acceptableSelect when thermal budget allows 15% higher I²R loss and cost sensitivity outweighs efficiency gain
SI2302DS-T1-GE3Single-channel SOT-23; 28mΩ @ 4.5V but requires two devices and extra PCB areaNo integrated dual-channel timing correlation; higher assembly costChoose only if existing SOT-23 footprint reuse is mandatory and board area is unconstrained

Compared with DMN2041UFDB-13, DMN2045UFDB-13 trades 15mΩ higher on-resistance for lower unit cost, while SI2302DS-T1-GE3 forces duplication of layout and gate drive resources - making the DMN2041UFDB-13 optimal for space- and efficiency-critical dual-switch designs.

Availability

DMN2041UFDB-13 is available at Aetrix Electronics and suitable for USB-C power adapters, smartphone battery protection circuits, and wireless earbud charging cases requiring stable component supply, RoHS-compliant sourcing, and full traceability.

Supply support for DMN2041UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMN2041UFDB-13 belongs to Diodes' U-DFN ultra-small-footprint MOSFET product line, engineered specifically for miniaturized power switching in portable and battery-powered electronics where height, thermal resistance, and gate drive compatibility are critical.

FAQ

What is the maximum pulsed drain current rating for DMN2041UFDB-13?

The pulsed drain current (IDM) is rated at 20A for 10μs pulses with 1% duty cycle. This rating assumes proper PCB thermal design (1"×1" FR-4, 2oz copper) and accounts for transient thermal impedance limits. It is not sustainable in DC operation due to power dissipation constraints (PD = 1.4W steady-state).

Does DMN2041UFDB-13 integrate body diodes, and what is their forward voltage?

Yes - each channel includes an intrinsic body diode with typical forward voltage (VSD) of 0.75V at 4.4A and 25°C. The diode exhibits 6.6ns reverse recovery time (tRR) and 1.2nC reverse recovery charge (QRR), enabling efficient synchronous rectification in buck converters when used in appropriate topologies.

Can DMN2041UFDB-13 be used in automotive applications?

No - DMN2041UFDB-13 is not AEC-Q101 qualified. While its operating temperature range (–55°C to +150°C) meets automotive ambient requirements, it lacks PPAP documentation, IATF 16949 manufacturing certification, and stress-test validation required for automotive use. Diodes offers AEC-Q101 variants under different part numbers.

What is the recommended PCB pad layout for U-DFN2020-6 (Type B) package?

The official Diodes-recommended pad layout specifies X1 = 0.600mm, Y1 = 1.000mm, G1 = 0.450mm, and thermal pad dimensions matching the exposed die paddle (D2 = 0.60mm). Use solder mask defined pads and ensure ≥0.15mm soldermask dam between pins to prevent bridging during reflow.

DMN2041UFDB-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.7A
Rds On (Max) @ Id, Vgs:
40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:
713pF @ 10V
Power - Max:
1.4W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type B)

DMN2041UFDB-13 FAQ

1.How can I place an order for DMN2041UFDB-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2041UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2041UFDB-13 reliable?

The price and inventory of DMN2041UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2041UFDB-13 is usually 5 days.

3.What payment methods are accepted for DMN2041UFDB-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2041UFDB-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2041UFDB-13?

DMN2041UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2041UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2041UFDB-13?

For technical support, including DMN2041UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2041UFDB-13 requirements.

6.How does Aetrix verify that DMN2041UFDB-13 is sourced from the original manufacturer or authorized distributors?

All DMN2041UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2041UFDB-13 meets industry standards.

7.What is the process for return or replacement of DMN2041UFDB-13?

All DMN2041UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2041UFDB-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2041UFDB-13 part is unused and in its original packaging.

Return procedure for DMN2041UFDB-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2041UFDB-13 Tags

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