My Inquiry
My Account
Diodes Incorporated DMN2041UVT-13
- Part No.:
- DMN2041UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2041UVT-13.pdf
- Description:
- MOSFET 2N-CH 20V 5.8A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:3,735
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2041UVT-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V VDSS, 28 mΩ RDS(ON) @ 4.5V VGS, and 5.8A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and LED backlighting power stages.
For engineers reviewing the DMN2041UVT-13 datasheet, DMN2041UVT-13 pinout, DMN2041UVT-13 application, or DMN2041UVT-13 equivalent, key selection criteria include low gate charge (9.1 nC), fast switching (tF = 17 ns), thermal resistance (RθJA = 87 °C/W on 2 oz copper), and AEC-Q101 readiness for automotive-grade power management.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single TSOT26 footprint, sharing common source terminals per channel - enabling synchronous buck topologies and dual-load switching without external paralleling. Its 1.8V gate threshold (VGS(TH) max 0.9V) supports direct drive from 1.8V/2.5V logic controllers.
The device delivers low dynamic losses via Ciss = 689 pF and Crss = 79 pF at VDS = 10V, with total gate charge of 9.1 nC - balancing drive strength and EMI control. Thermal performance is validated on 1" × 1" FR-4 with 2 oz copper, achieving 1.44 W power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Supports input rails up to 18V nominal in USB PD, portable battery-powered systems. |
| RDS(ON) | 28 mΩ @ 4.5V VGS - Enables <150 mW conduction loss at 5.8A, critical for thermally constrained space-constrained converters. |
| Qg | 9.1 nC - Reduces gate driver power demand and enables efficient operation with low-side drivers like TC4427 or UCC27517. |
| tF | 17 ns - Limits switching transition time to minimize overlap loss in synchronous rectification stages. |
| RθJA | 87 °C/W - Achieved on 1" × 1" 2 oz copper PCB; allows 1.44 W dissipation before exceeding 150°C junction limit. |
| ID (max) | 5.8 A @ +25°C - Sustains peak load currents in 5–12V intermediate bus converters powering FPGAs or SoCs. |
| Ciss | 689 pF - Low input capacitance reduces Miller effect and improves stability with standard gate resistors (e.g., 10 Ω). |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9 mm × 1.6 mm × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source 1) | Channel 1 source terminal | Common-source connection point for first N-MOSFET; tied internally to Pin 4 in dual configuration. |
| 2 (Gate 1) | Channel 1 gate input | Controls turn-on of first MOSFET; requires ≥1.8V to fully enhance; compatible with 1.8V/2.5V/3.3V logic. |
| 3 (Drain 1) | Channel 1 drain terminal | High-side or low-side switch node; rated for 20V blocking and 5.8A pulsed current (IDM = 36 A). |
| 4 (Source 2) | Channel 2 source terminal | Common-source connection for second N-MOSFET; electrically isolated from Pin 1 unless externally tied. |
| 5 (Gate 2) | Channel 2 gate input | Independent gate control for second MOSFET; enables dual independent switching or parallel operation. |
| 6 (Drain 2) | Channel 2 drain terminal | Second switch node; identical rating to Pin 3; supports dual-output or phase-split converter topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 32 mΩ @ 2.5V VGS - enables efficient operation directly from 2.5V microcontroller GPIOs without level-shifting. |
| Fast switching with low Qgd | 2.1 nC gate-drain charge - minimizes Miller plateau duration and improves hard-switching efficiency in buck regulators. |
| Thermally robust layout | 87 °C/W RθJA on 2 oz copper - reduces need for thermal vias or heatsinks in compact 12V-to-3.3V point-of-load designs. |
| Automotive-qualified process | AEC-Q101 stress-tested - suitable for under-hood infotainment power supplies and ADAS camera module bias rails. |
| Green packaging | Halogen- and antimony-free, <900 ppm Br/Cl - meets IEC 61249-2-21 and IPC-4101D requirements for eco-conscious OEMs. |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Driving white LED strings in automotive instrument clusters with PWM dimming at 10–20 kHz. IC Role / Device Role / Timing Role: Low-side synchronous switch in boost-based constant-current LED driver topology. Use Value: 28 mΩ RDS(ON) limits conduction loss to <100 mW at 3.5A, reducing thermal load on small PCB areas near display glass. |
Use Scenario: Dual-path power routing in USB-C port controllers managing 5V/9V/15V/20V source/sink negotiation. IC Role / Device Role / Timing Role: Independent high-side and low-side switches for bidirectional VBUS path control and fault isolation. Use Value: Matched dual channels enable symmetrical on-resistance and timing, supporting <500 ns dead-time control without cross-conduction risk. |
| Industrial PLC I/O Module | Portable Medical Pump Motor Driver |
|
Use Scenario: Solid-state relay replacement for 24V DC digital output modules driving solenoids and indicator lamps. IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode for inductive kickback clamping. Use Value: 0.7–0.9V VSD forward drop ensures <100 mW dissipation during flyback, eliminating need for external Schottky diodes. |
Use Scenario: H-bridge half-bridge stage in brush DC motor control for infusion pumps requiring precise 0.1–500 mA current regulation. IC Role / Device Role / Timing Role: One channel as high-side, one as low-side in complementary drive mode with shoot-through protection. Use Value: 9.1 nC total gate charge enables clean 100 kHz PWM switching with minimal gate driver heat, critical for sealed, fanless enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LVT-7 | Same die, but in leaded SOT-26 (not TSOT26); RθJA = 113 °C/W (FR-4, min pad); higher leakage (IDSS ≤ 1 µA vs. same spec) | Preferred where reworkability or legacy solder process compatibility matters; not suitable for ultra-thin mobile PCBs | Select when manual assembly, wave solder, or thermal derating margin >20% is required over TSOT26 |
| AOB2041L | 20V dual N-MOSFET in TSOP-6; RDS(ON) = 30 mΩ @ 4.5V; Qg = 10.5 nC; RθJA = 95 °C/W; no AEC-Q101 qualification | Lower cost alternative for consumer-grade power tools or home appliances where automotive qualification is unnecessary | Choose for non-automotive industrial applications needing same voltage/current specs but lower compliance overhead |
Compared with DMN2041LVT-7 and AOB2041L, the DMN2041UVT-13 offers superior thermal performance (87 vs. 113/95 °C/W), AEC-Q101 readiness, and thinner profile - making it optimal for space- and reliability-critical automotive and medical power stages.
Availability
DMN2041UVT-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, automotive LED backlighting systems, and industrial PLC output stages requiring stable component supply across multi-year production cycles.
Supply support for DMN2041UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers in Asia, Europe, and the US, and manufacturing in certified ISO/TS 16949 and ISO 14001 facilities.
The DMN2041UVT belongs to Diodes' "PowerMOS" product line - engineered specifically for high-frequency, high-efficiency power conversion in space-constrained, thermally demanding applications including automotive lighting and portable electronics.
FAQ
What is the maximum safe operating junction temperature for DMN2041UVT-13?
The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating curves in Figure 5 and Figure 7 confirm RDS(ON) increases by ~1.8× from –55°C to +150°C at fixed VGS, requiring thermal design margins below 135°C for long-term reliability.
Can DMN2041UVT-13 be used in a synchronous buck converter as both high-side and low-side switches?
No - DMN2041UVT-13 contains two N-channel MOSFETs only, with no integrated bootstrap diode or level-shifter. It can serve as dual low-side switches or one high-side + one low-side only if an external gate driver with floating supply (e.g., IR2104) is used for the high-side channel. Body diode conduction must be avoided in high-side position during dead time.
Is the TSOT26 package of DMN2041UVT-13 compatible with standard SMT reflow profiles?
Yes - the TSOT26 package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard Pb-free reflow profiles (peak 260°C, 10–30 sec above 217°C). The matte tin annealed finish ensures reliable solder wetting; recommended pad dimensions are provided in the datasheet's "Suggested Pad Layout" section (page 6).
Does DMN2041UVT-13 have avalanche rating or UIS capability?
No - the datasheet does not specify Unclamped Inductive Switching (UIS) energy rating or single-pulse avalanche capability. The device is intended for clamped switching applications only. For inductive loads, external freewheeling paths (e.g., synchronous rectification or Schottky catch diodes) must be implemented to avoid voltage overshoot beyond 20V VDSS.
DMN2041UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A (Ta)
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 689pF @ 10V
- Power - Max:
- 1.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN2041UVT-13 FAQ
1.How can I place an order for DMN2041UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2041UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2041UVT-13 reliable?
The price and inventory of DMN2041UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2041UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN2041UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2041UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2041UVT-13?
DMN2041UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2041UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2041UVT-13?
For technical support, including DMN2041UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2041UVT-13 requirements.
6.How does Aetrix verify that DMN2041UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN2041UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2041UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN2041UVT-13?
All DMN2041UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2041UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2041UVT-13 part is unused and in its original packaging.
Return procedure for DMN2041UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2041UVT-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
