Diodes Incorporated DMN2046U-13
- Part No.:
- DMN2046U-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN2046U-13.pdf
- Description:
- MOSFET N-CH 20V 3.4A SOT23
- Quantity:
- Payment:

- Shipping:

Inventory:9,886
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Product details
Overview
DMN2046U-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 20V V(BR)DSS, 72mΩ RDS(ON) @ 4.5V VGS, and 3.4A continuous drain current at 25°C - optimized for high-efficiency battery charging and DC-DC converter power switches in portable electronics.
For engineers reviewing the DMN2046U-13 datasheet, DMN2046U-13 pinout, DMN2046U-13 application, or DMN2046U-13 equivalent, key selection criteria include low-threshold gate drive compatibility (VGS(th) = 0.4–1.4V), fast switching (tD(on) = 6.7ns), ESD-protected gate, and thermal performance on FR-4 PCBs with 100°C/W RθJA under thermal bias.
Technical Context
This discrete MOSFET operates as a low-voltage, logic-level power switch with integrated body diode and ESD protection. Its gate threshold voltage range (0.4–1.4V) enables direct drive from 2.5V/3.3V microcontrollers, while its 292pF Ciss and 32pF Crss support efficient high-frequency PWM operation in synchronous buck topologies.
The device's RDS(ON) shifts predictably with temperature (normalized to 1.0 at 25°C, ~1.6 at 150°C @ 4.5V), and its safe operating area (SOA) supports pulsed drain currents up to 18A (≤10µs, 1% duty), making it suitable for transient-heavy load switching in portable power adaptors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum blocking voltage before avalanche; sets upper limit for input rail in 5V/12V systems |
| RDS(ON) | 72mΩ @ VGS = 4.5V, ID = 3.6A - Enables <260mW conduction loss at 3.4A, critical for thermal budget in compact SOT23 |
| ID (continuous) | 3.4A @ TA = 25°C - Sustained load current capability with standard FR-4 layout and no heatsink |
| Qg | 3.8nC @ VGS = 4.5V - Low gate charge reduces driver power and switching losses in 500kHz–1MHz DC-DC converters |
| Ciss | 292pF @ VDS = 10V - Input capacitance determines Miller effect and required gate drive strength |
| tD(on) | 6.7ns - Short turn-on delay enables precise timing control in high-speed synchronous rectification |
| VGS(th) | 0.4–1.4V - Guaranteed turn-on with 2.5V logic; avoids partial enhancement and shoot-through risk |
Pinout & Package
SOT23-3 package: surface-mount, 3-terminal plastic case with matte tin-plated copper leadframe; UL 94V-0 rated molding compound; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output terminal | Connected to switched load or inductor node; carries full load current and must be routed with low-inductance trace |
| G (Gate) | Control input for channel conduction | ESD-protected; requires <6.3Ω series resistance to damp ringing when driven by MCU GPIO |
| S (Source) | Reference node for gate drive and current return | Typically tied to ground or low-side shunt; defines VGS reference and impacts layout-dependent common-source inductance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V VGS | 110mΩ - Enables usable conduction even with weak gate drive, improving efficiency in brown-out conditions |
| Fast switching speed | tD(off) = 69.1ns, tf = 34.1ns - Reduces transition losses in high-frequency (>1MHz) converters |
| Integrated ESD protection | ±10μA IGSS max - Eliminates need for external gate protection in handheld device designs |
| Green packaging | Halogen- and antimony-free, RoHS-compliant - Meets IEC 61249-2-21 and JEDEC J-STD-020 requirements for eco-design |
Applications
| Battery Charging Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: High-efficiency linear or switching charger for single-cell Li-ion batteries in wearables. IC Role / Device Role / Timing Role: Low-side power switch controlling charge current path and reverse-current blocking during termination. Use Value: 72mΩ RDS(ON) limits voltage drop to <250mV at 3.4A, preserving charging accuracy and minimizing thermal rise in sealed enclosures. |
Use Scenario: Load switch enabling/disabling 5V USB-C power path in portable hubs or dongles. IC Role / Device Role / Timing Role: Controlled power gate with fast turn-off (tf = 34.1ns) to meet USB PD 3.0 fault response timing. Use Value: ESD-protected gate withstands repeated hot-plug events without external TVS, reducing BOM count. |
| DC-DC Synchronous Rectifier | Portable Power Adaptor Output Stage |
Use Scenario: Secondary-side synchronous rectifier in isolated 5V/3A flyback converter for medical sensors. IC Role / Device Role / Timing Role: Low-Vth N-MOSFET replacing Schottky diode to reduce forward loss and improve light-load efficiency. Use Value: 0.4–1.4V VGS(th) ensures reliable turn-on with gate drive derived from transformer auxiliary winding. |
Use Scenario: Main output switch in compact 12V-to-5V buck converter for Bluetooth speakers. IC Role / Device Role / Timing Role: High-side or low-side switching element operating at 600kHz with minimal gate drive demand. Use Value: 3.8nC Qg allows use of low-cost 3.3V GPIO-driven gate driver ICs without excessive power dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2045U-13 | Lower RDS(ON): 52mΩ @ 4.5V, but higher Qg (5.2nC); same SOT23 package and pinout | Better conduction loss, but increased switching loss above 1MHz due to higher gate charge | Select when thermal headroom is constrained and switching frequency ≤500kHz |
| AO3400A | Higher RDS(ON): 44mΩ @ 10V, but only 28mΩ @ 4.5V; slightly higher Ciss (420pF); same SOT23-3 | Superior low-VGS performance, but less robust SOA (ID = 5.7A, but lower pulse rating) | Prefer for ultra-low-voltage gate drive (<2.0V) where VGS(th) margin is critical |
Compared with DMN2046U-13, DMN2045U-13 trades higher gate drive energy for lower conduction loss, while AO3400A delivers better sub-3V turn-on at the cost of reduced ruggedness in pulsed overloads - both require revalidation of gate drive strength and thermal layout.
Availability
DMN2046U-13 is available at Aetrix Electronics and suitable for battery charging circuits, USB power delivery switches, and portable power adaptor output stages requiring stable component supply and long-term manufacturability.
Supply support for DMN2046U-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design and manufacturing operations across Asia and the Americas.
The DMN2046U belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for space-constrained, high-efficiency power management in portable and battery-powered systems.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN2046U-13 has an operating junction temperature range of –55°C to +150°C. For continuous DC operation at 3.4A, thermal design must ensure TJ remains ≤150°C - achievable with 100°C/W RθJA on thermally enhanced FR-4 layouts per Note 6 in the datasheet.
Is the body diode suitable for reverse-current blocking in battery backup paths?
Yes - the integrated body diode has a forward voltage of ≤1.2V at 0.94A and exhibits reverse recovery charge (Qrr) of 3.6nC, enabling effective reverse-current isolation in OR-ing and backup-switching configurations without external diodes.
Can DMN2046U-13 be used in a high-side configuration with 3.3V gate drive?
No - it is an N-channel device requiring gate voltage > source voltage to conduct. In high-side applications, a charge pump or level-shifting gate driver is mandatory; for native 3.3V high-side switching, a P-channel alternative like DMG2305U is recommended.
Does the SOT23-3 package support hand soldering or rework?
Yes - the SOT23-3 footprint is compatible with standard hot-air rework stations and fine-tip irons. The matte tin finish ensures solderability per MIL-STD-202 Method 208, and moisture sensitivity level 1 eliminates bake requirements prior to assembly.
DMN2046U-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 72mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 292 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 760mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN2046U-13 FAQ
1.How can I place an order for DMN2046U-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2046U-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2046U-13 reliable?
The price and inventory of DMN2046U-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2046U-13 is usually 5 days.
3.What payment methods are accepted for DMN2046U-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2046U-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2046U-13?
DMN2046U-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2046U-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2046U-13?
For technical support, including DMN2046U-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2046U-13 requirements.
6.How does Aetrix verify that DMN2046U-13 is sourced from the original manufacturer or authorized distributors?
All DMN2046U-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2046U-13 meets industry standards.
7.What is the process for return or replacement of DMN2046U-13?
All DMN2046U-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2046U-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2046U-13 part is unused and in its original packaging.
Return procedure for DMN2046U-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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