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Diodes Incorporated DMN2046UVT-13
- Part No.:
- DMN2046UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2046UVT-13.pdf
- Description:
- MOSFET 2N-CH 20V 2.6A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:5,423
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Product details
Overview
DMN2046UVT from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V VDSS, 90mΩ RDS(ON) @ 4.5V VGS, and 2.6A continuous drain current at +25°C. It integrates two ESD-protected MOSFETs with low input capacitance (278pF Ciss) and fast switching (tD(ON) = 4.8ns), deployed in DC-DC converters for portable power management.
For engineers reviewing the DMN2046UVT datasheet, DMN2046UVT pinout, DMN2046UVT application, or DMN2046UVT equivalent, key selection criteria include dual-channel RDS(ON) matching at low gate drive (2.5V–4.5V), thermal resistance (213°C/W RθJA on FR-4), and body diode forward voltage (0.7–1.2V) for synchronous rectification.
Technical Context
This dual MOSFET uses planar trench-gate technology to achieve low on-resistance while maintaining low gate charge (3.6nC @ 4.5V) and minimal reverse transfer capacitance (27pF Crss). Its gate threshold voltage range (0.4–1.4V) enables reliable turn-on with logic-level drivers.
The device features integrated gate protection diodes per channel and operates across –55°C to +150°C junction temperature. Its SOA supports single-pulse currents up to 14A with 10μs duration, and normalized RDS(ON) variation remains ≤1.8× over full temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum drain-source blocking voltage for 12V rail switching and USB PD auxiliary power stages |
| RDS(ON) @ 4.5V | 90mΩ - Confirmed static on-resistance at standard logic-level gate drive; enables <120mW conduction loss at 2.6A |
| ID (continuous) | 2.6A @ +25°C - Verified steady-state current rating on FR-4 PCB with minimum pad layout |
| Ciss | 278pF - Input capacitance determines gate drive strength requirement; compatible with low-power PWM controllers |
| tD(ON) | 4.8ns - Turn-on delay time measured at VDD=10V, enabling >10MHz switching in high-frequency buck converters |
| VGS(TH) | 0.4–1.4V - Gate threshold range ensures robust turn-on with 2.5V/3.3V microcontroller outputs |
| PD (FR-4) | 0.59W - Power dissipation limit defines thermal derating curve for compact board layouts |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Q1 | High-side switch node for first MOSFET channel; connects to input rail in high-side configuration |
| S1 | Source of Q1 | Return path for Q1; tied to common source node or ground in low-side topology |
| G1 | Gate of Q1 | Control terminal for Q1; requires <10µA leakage current drive and ESD protection compliance |
| D2 | Drain of Q2 | Independent drain node for second MOSFET; enables dual-phase or complementary switching |
| S2 | Source of Q2 | Separate source connection allows independent biasing or current sensing per channel |
| G2 | Gate of Q2 | Isolated gate input; supports independent PWM control or paralleled gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 2.5V | 130mΩ - Enables operation with battery-powered 2.5V GPIOs without level-shifting circuitry |
| ESD-protected gate | HBM ±2kV - Integrated protection eliminates need for external TVS on gate traces in handheld designs |
| Low Coss | 33pF - Reduces switching losses during hard-commutation and improves light-load efficiency |
| Fast tF | 27ns - Short fall time minimizes overlap conduction loss in synchronous rectifiers |
| Green compound | Br+Cl <1500ppm, Sb <1000ppm - Meets IPC-1752A Class A environmental reporting requirements |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Driving white LED strings in tablet displays using boost converter with PWM dimming. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling LED cathode current paths with synchronized gate drive. Use Value: 90mΩ RDS(ON) limits I²R loss to <600mW per channel at 2.1A peak, extending battery runtime by >8% vs. legacy 150mΩ devices. | Use Scenario: Implementing programmable power path control in USB-C sink ports with dual 5V/9V/15V rails. IC Role / Device Role / Timing Role: Independent high-side switches managing VBUS routing and fault isolation between alternate modes. Use Value: Matched RDS(ON) tolerance (<15%) ensures balanced current sharing during parallel operation, reducing thermal imbalance risk. |
| Portable DC-DC Converter | Smartphone Power Management |
Use Scenario: High-frequency (2MHz) buck converter supplying core voltage to application processors in wearables. IC Role / Device Role / Timing Role: Synchronous rectifier pair replacing Schottky diodes to improve light-load efficiency. Use Value: 278pF Ciss and 27pF Crss reduce gate drive energy and Miller-induced shoot-through, enabling stable 2MHz operation. | Use Scenario: Load switching for camera module, display, and RF subsystems in LTE smartphones. IC Role / Device Role / Timing Role: Dual load switch providing controlled inrush current and independent enable sequencing. Use Value: 0.4–1.4V VGS(TH) ensures clean turn-on with 1.8V/3.3V PMIC enable signals, eliminating false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2045UVT-13 | RDS(ON) = 75mΩ @ 4.5V (lower), but higher Ciss = 320pF and no ESD protection on gate | Requires external gate ESD protection; better suited for fixed 4.5V-only systems with tighter RDS(ON) budget | Select when lowest conduction loss dominates over gate drive complexity and ESD robustness |
| AOB2046L | Same 20V/90mΩ spec but in TSOP-6 package (larger footprint, 3.9mm × 2.8mm); RθJA = 120°C/W (superior thermal performance) | Preferred for thermally constrained industrial modules where board space permits larger package | Select when thermal derating margin is critical and PCB area allows TSOP-6 layout |
Compared with DMN2046UVT, DMN2045UVT-13 trades ESD robustness and gate drive simplicity for lower RDS(ON), while AOB2046L sacrifices miniaturization for significantly improved thermal resistance-making DMN2046UVT optimal for space-constrained consumer electronics requiring gate-level reliability.
Availability
DMN2046UVT is available at Aetrix Electronics and suitable for LED backlighting, portable DC-DC converters, and smartphone power management applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMN2046UVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN2046UVT belongs to Diodes' "Ultra-Small Signal and Power MOSFET" product line, engineered specifically for space-constrained portable electronics requiring logic-level drive compatibility, low thermal resistance in miniature packages, and automotive-grade process consistency.
FAQ
What is the maximum safe operating junction temperature for DMN2046UVT?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A104. Operation above this limit risks permanent degradation of gate oxide integrity and threshold voltage shift. Derating curves in Figure 12 confirm safe pulsed operation up to 14A only for durations ≤100µs at TJ = 150°C.
Can DMN2046UVT be used in automotive applications?
DMN2046UVT is not AEC-Q101 qualified. While it shares process technology with qualified parts, Diodes explicitly states that automotive use requires PPAP-capable, IATF 16949-manufactured variants-such as the AEC-Q101-compliant DMN2046UVT-Q - which undergo additional stress testing and lot traceability.
How does the dual-channel structure affect thermal coupling between MOSFETs?
Thermal resistance measurements show RθJA = 213°C/W for single-channel operation and 133°C/W when both channels conduct simultaneously under identical PCB conditions (Note 6). This indicates significant thermal coupling-both channels share the same die substrate, so simultaneous high-current operation requires 35% more heatsinking than single-channel use.
Is the body diode suitable for reverse polarity protection?
No-the intrinsic body diode has VSD = 0.7–1.2V at 0.94A and is not rated for continuous reverse-battery protection. For such applications, Diodes recommends dedicated reverse-voltage protection ICs like AP22653, as the DMN2046UVT's body diode lacks specified reverse recovery time or avalanche rating.
DMN2046UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 278pF @ 10V
- Power - Max:
- 590mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN2046UVT-13 FAQ
1.How can I place an order for DMN2046UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2046UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2046UVT-13 reliable?
The price and inventory of DMN2046UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2046UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN2046UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2046UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2046UVT-13?
DMN2046UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2046UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2046UVT-13?
For technical support, including DMN2046UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2046UVT-13 requirements.
6.How does Aetrix verify that DMN2046UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN2046UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2046UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN2046UVT-13?
All DMN2046UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2046UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2046UVT-13 part is unused and in its original packaging.
Return procedure for DMN2046UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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