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Diodes Incorporated DMN2050LFDB-13
- Part No.:
- DMN2050LFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2050LFDB-13.pdf
- Description:
- MOSFET 2N-CH 20V 3.3A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:17,537
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Product details
Overview
DMN2050LFDB from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 20V VDSS, 45 mΩ RDS(ON) @ 4.5V VGS, and 4.5A ID at +25°C - optimized for high-efficiency DC-DC converters and battery charging circuits in space-constrained portable power adaptors.
For engineers reviewing the DMN2050LFDB datasheet, DMN2050LFDB pinout, DMN2050LFDB application, or DMN2050LFDB equivalent, key selection criteria include low RDS(ON) at 2.5V–4.5V gate drive, fast switching (tR/tF ≤ 8 ns), and thermal performance on FR-4 with 1-inch copper pad (RθJA = 89°C/W).
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single compact U-DFN2020-6 (Type B) package with exposed drain pads for thermal conduction. Each channel features a gate threshold voltage of 0.4–1.0 V and supports logic-level drive down to 2.5 V, enabling direct interface with 3.3V microcontrollers and PMICs.
Its dynamic characteristics include Ciss = 389 pF, Qg = 5.7 nC @ 4.5V, and tD(OFF) = 25 ns - balancing low gate charge for efficiency and controlled switching speed to minimize EMI in portable power management systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage compatible with 12V/15V input rails in USB PD and Li-ion charging stages. |
| RDS(ON) | 45 mΩ @ 4.5V VGS - Enables <100 mW conduction loss at 2A load in synchronous buck converters. |
| ID (max) | 4.5 A @ +25°C - Sustains continuous current for dual-path 2A load switches or half-bridge legs in compact DC-DC modules. |
| Ciss | 389 pF - Low input capacitance reduces gate drive power and improves PWM responsiveness in high-frequency (>1 MHz) regulators. |
| tR/tF | 8 ns each - Fast edge rates support efficient operation up to 2 MHz switching without excessive shoot-through risk. |
| RθJA | 89 °C/W (with 1″² copper) - Allows 1.42 W power dissipation at +70°C ambient, suitable for unheatsinked portable designs. |
| VGS(TH) | 0.4–1.0 V - Ensures reliable turn-on with 1.8V/2.5V/3.3V logic outputs, eliminating need for level-shifting circuitry. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0 mm × 2.0 mm × 0.6 mm, thermally enhanced with dual exposed drain pads (D1/D2) and NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain 1 | Primary high-side or low-side switch node; electrically connected to exposed pad D1 for thermal and current path integrity. |
| Pin 2 (S1) | Source 1 | Return path for Channel 1; tied to ground or input rail depending on topology (e.g., low-side switch or synchronous rectifier). |
| Pin 3 (G1) | Gate 1 | Control terminal for Channel 1; requires <5.7 nC total charge for full turn-on at 4.5V, compatible with standard GPIO drivers. |
| Pin 4 (G2) | Gate 2 | Independent control input for Channel 2; enables dual-phase or redundant switching without cross-talk. |
| Pin 5 (S2) | Source 2 | Isolated return for Channel 2; supports split-load or differential configurations (e.g., dual buck or load-sharing paths). |
| Pin 6 (D2) | Drain 2 | Second high-current output node; shares thermal pad with D1 but electrically isolated - allows independent routing in layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V | 55 mΩ - Enables stable operation with weak-drive controllers (e.g., battery fuel gauges or low-power MCUs) without gate boosting. |
| Low Ciss & Qg | 389 pF / 5.7 nC - Reduces gate driver losses and simplifies layout by minimizing trace inductance sensitivity. |
| Fast tD(OFF) | 25 ns - Limits dead-time requirements in synchronous rectification, improving light-load efficiency in DC-DC converters. |
| Thermally optimized U-DFN | RθJC = 18°C/W - Direct heat transfer from die to PCB copper enables >1W dissipation in 2-layer boards without thermal vias. |
| Green, RoHS-compliant | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - Meets IPC-1752A material declaration requirements for automotive and medical OEMs. |
Applications
| Battery Charging Circuit | USB-C Power Delivery Module |
|---|---|
|
Use Scenario: Dual-path Li-ion charger managing input multiplexing between wall adapter and OTG power sources. IC Role / Device Role / Timing Role: Dual N-channel switch controlling bidirectional power routing and reverse-current blocking. Use Value: 45 mΩ RDS(ON) minimizes voltage drop across charging FETs, preserving 95%+ efficiency at 2A while maintaining thermal safety in 20 mm² footprint. |
Use Scenario: Compact 20W USB-C PD sink implementing programmable power supply (PPS) with synchronous rectification. IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier pair in buck-boost converter stage. Use Value: Matched 8 ns rise/fall times and low Qgd (1.5 nC) reduce switching overlap loss, enabling >92% efficiency at 1 MHz switching frequency. |
| Portable Power Adaptor | Industrial Sensor Node Power Rail |
|
Use Scenario: 5V/3.3V dual-output AC-DC adaptor for handheld test equipment with tight size constraints. IC Role / Device Role / Timing Role: Dual-channel load switch isolating downstream rails during sleep mode and enabling soft-start sequencing. Use Value: 0.4–1.0 V VGS(TH) ensures clean turn-on with 3.3V MCU GPIOs; low IDSS (<1 μA) prevents standby current leakage. |
Use Scenario: Remote wireless sensor node powered by coin-cell or energy harvester, requiring ultra-low quiescent power. IC Role / Device Role / Timing Role: Dual-path power selector managing primary battery and backup supercapacitor inputs. Use Value: 100 nA max IGSS and <1 μA IDSS preserve micropower operation; U-DFN2020-6 footprint fits sub-100 mm² PCB area budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LFG-7 | Same U-DFN2020-6 package, but single-channel; RDS(ON) = 32 mΩ @ 4.5V, higher ID = 5.2A. | Requires two devices for dual functionality; better suited for discrete high-current paths than integrated dual switching. | Select when layout allows separate placement and higher per-channel current (>4.5A) is required. |
| AOB2036L | SO-8 package, dual N-channel, RDS(ON) = 28 mΩ @ 4.5V, but larger footprint and RθJA = 60°C/W (with heatsink). | Supports higher power (2.5W) but incompatible with ultra-compact portable designs due to 5×6 mm body. | Select when thermal headroom >1.5W is needed and board space permits SO-8 mounting. |
Compared with DMN2050LFDB, DMN2053LFG-7 offers lower RDS(ON) per channel but doubles component count and layout area, while AOB2036L trades miniaturization for higher power handling - making DMN2050LFDB optimal for space-limited, thermally constrained dual-switch applications below 1.4W.
Availability
DMN2050LFDB is available at Aetrix Electronics and suitable for battery charging circuits, portable power adaptors, and DC-DC converter designs requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for DMN2050LFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMN2050LFDB belongs to Diodes' logic-level dual MOSFET product line, engineered specifically for miniaturized, high-frequency power conversion where low gate charge, matched dual channels, and thermal efficiency in sub-2mm² packages are critical.
FAQ
What is the maximum safe operating temperature for DMN2050LFDB?
The device supports junction temperatures from –55°C to +150°C. With RθJA = 89°C/W on a 1-inch² copper pad, it sustains 1.42 W at +25°C ambient and derates linearly to 0.90 W at +70°C ambient. Thermal design must ensure TJ stays ≤150°C under worst-case load and ambient conditions.
Can DMN2050LFDB be used in a synchronous buck converter's high-side position?
No - as a standard N-channel MOSFET, it requires gate drive above the source potential. It is suitable only for low-side switching or synchronous rectification in buck converters where the source is grounded or referenced to a stable node. High-side use would require external bootstrap or charge-pump circuitry.
Does DMN2050LFDB have integrated ESD protection?
The datasheet does not specify built-in ESD protection diodes. Its gate oxide is rated for ±12 V VGSS, and typical HBM ESD rating for this process is 2 kV - but system-level ESD protection (e.g., TVS on gate traces) is recommended for robustness in portable end-equipment.
How does the U-DFN2020-6 (Type B) package affect PCB layout?
The package uses two exposed drain pads (D1/D2) that must be soldered to dedicated thermal pads on the PCB. Recommended layout includes 1-inch² copper pour per drain pad, ≥4 thermal vias (0.3 mm diameter) per pad, and isolation of G1/G2/S1/S2 traces to prevent coupling - critical for noise-sensitive power management applications.
DMN2050LFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 389pF @ 10V
- Power - Max:
- 730mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN2050LFDB-13 FAQ
1.How can I place an order for DMN2050LFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2050LFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2050LFDB-13 reliable?
The price and inventory of DMN2050LFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2050LFDB-13 is usually 5 days.
3.What payment methods are accepted for DMN2050LFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2050LFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2050LFDB-13?
DMN2050LFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2050LFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2050LFDB-13?
For technical support, including DMN2050LFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2050LFDB-13 requirements.
6.How does Aetrix verify that DMN2050LFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMN2050LFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2050LFDB-13 meets industry standards.
7.What is the process for return or replacement of DMN2050LFDB-13?
All DMN2050LFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2050LFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2050LFDB-13 part is unused and in its original packaging.
Return procedure for DMN2050LFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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