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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2053U-13

Name: DMN2053U-13
Brand: Diodes Incorporated
SKU: DMN2053U-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2053U-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN2053U-13.pdf

Description:: MOSFET N-CH 20V 6.5A SOT23 T&R 1

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Product details

Overview

DMN2053U-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 20V V_DSS, 29 mΩ R_DS(ON) @ V_GS = 10V, and 6.5A continuous drain current at T_A = +25°C. It serves as a low-voltage power switch in portable battery management, load switching, and DC-DC converter synchronous rectification.

For engineers reviewing the DMN2053U-13 datasheet, DMN2053U-13 pinout, DMN2053U-13 application, or DMN2053U-13 equivalent, key selection criteria include its 4.5V gate drive compatibility, 414 pF input capacitance, 4.6 nC total gate charge, and thermal resistance of 93°C/W on enhanced PCB layout - critical for compact, thermally constrained designs.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 2.6 ns, t_F = 3.8 ns) and low gate charge (Q_g = 4.6 nC). Its 0.95 V typical V_GS(TH) enables reliable turn-on with 1.8–4.5 V logic-level drivers.

Designed for operation up to +150°C junction temperature, it features low input/output leakage (<100 nA IGSS, <1 µA IDSS), 58 pF C_oss, and integrated body diode with 0.7 V typical V_SD at 1 A - supporting bidirectional current handling in buck converters and reverse polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage for 3.3 V/5 V rail applications without derating
R_DS(ON)	29 mΩ @ V_GS = 10 V - Enables ≤180 mW conduction loss at 6.5 A, reducing thermal stress
I_D (max)	6.5 A @ T_A = +25°C - Supports high-current load switching in space-constrained SOT23 footprint
Q_g	4.6 nC - Low gate drive energy requirement, compatible with microcontroller GPIOs and low-power drivers
C_iss	414 pF - Limits Miller effect during switching; enables stable operation up to ~1 MHz in DC-DC stages
T_J range	−55°C to +150°C - Qualified for industrial and automotive under-hood ambient conditions
R_θJA	93°C/W (enhanced layout) - Allows 1.3 W dissipation with ≤57°C rise above ambient on 1-inch² copper pad

Pinout & Package

Package: SOT23 - Surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to switched load or power rail; carries full I_D; requires thermal pad connection for power dissipation
Gate (G)	Control electrode	Receives logic-level drive signal; 3.6 Ω gate resistance limits ringing and EMI during edge transitions
Source (S)	Reference node and return path	Common ground reference for gate drive and load return; forms body diode cathode (D→S conduction)

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	35 mΩ - Ensures efficient operation with 3.3 V microcontrollers and PMICs without level-shifting
Fast switching speed	t_F = 3.8 ns - Reduces transition losses in high-frequency (>500 kHz) DC-DC converters
Low gate charge	Q_gd = 1.4 nC - Minimizes Miller plateau duration, improving controllability under dynamic load
Green packaging	Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements
Body diode performance	V_SD = 0.7 V @ 1 A - Supports low-loss freewheeling in synchronous buck topologies

Applications

Portable Power Switching

Battery Protection Circuit

Use Scenario: Load switching in USB-C PD adapters and wireless charging receivers where size and efficiency are critical.

IC Role / Device Role: High-side load switch controlling 5 V/3.3 V system rails.

Use Value: 29 mΩ R_DS(ON) limits voltage drop to <190 mV at 6.5 A, preserving regulation margin and minimizing self-heating in 2.9 mm × 1.3 mm footprint.

Use Scenario: Overcurrent and reverse-polarity protection in single-cell Li-ion battery packs.

IC Role / Device Role: Back-to-back configured MOSFET for bidirectional current blocking and fault isolation.

Use Value: 0.95 V typical V_GS(TH) ensures robust turn-on with battery voltages down to 2.8 V, enabling fail-safe cutoff before cell damage.

Synchronous Rectifier

Logic-Level Interface Driver

Use Scenario: Secondary-side rectification in isolated 5 V/12 V flyback converters for IoT gateways.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: 414 pF C_iss and 4.6 nC Q_g allow clean gate drive from standard PWM controllers, cutting rectifier loss by >40% vs. 40 V Schottky.

Use Scenario: Signal-level translation between 1.8 V FPGA I/O and 3.3 V peripheral buses.

IC Role / Device Role: Level-shifting switch enabling bidirectional data lines with minimal propagation delay.

Use Value: 2.6 ns t_D(ON) and 3.8 ns t_F preserve signal integrity in 50 MHz digital interfaces without added timing skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2056U-7	R_DS(ON) = 32 mΩ @ 4.5 V; higher Q_g (5.2 nC); same SOT23 package	Slightly lower efficiency at 5 V drive; marginally slower switching	Preferred when cost sensitivity outweighs 10% R_DS(ON) penalty and gate drive strength is ample
AO3400	R_DS(ON) = 28 mΩ @ 10 V but 44 mΩ @ 4.5 V; C_iss = 520 pF; non-RoHS-3 compliant	Higher switching loss at 1 MHz; lacks halogen-free certification for EU medical devices	Acceptable for legacy industrial controls where RoHS 3 compliance is not mandated

Compared with DMN2053U-13, DMN2056U-7 trades marginal R_DS(ON) increase for broader production availability, while AO3400 offers similar on-resistance only at 10 V drive - making DMN2053U-13 optimal for 3.3 V–4.5 V logic-compatible, thermally constrained, and environmentally regulated designs.

Availability

DMN2053U-13 is available at Aetrix Electronics and suitable for portable power switching, battery protection circuits, and synchronous rectifier designs requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN2053U-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for consumer, industrial, and automotive markets.

The DMN2053U belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for low-voltage, high-density power switching where gate drive simplicity, thermal efficiency, and environmental compliance are mandatory.

FAQ

What is the maximum safe operating voltage for DMN2053U-13?

The absolute maximum drain-source voltage (V_DSS) is 20 V DC. Operation beyond this rating risks avalanche breakdown and permanent device failure. For reliable long-term use, design margins should limit steady-state V_DS to ≤16 V, especially under transient conditions or elevated temperature.

Can DMN2053U-13 be driven directly by a 3.3 V microcontroller GPIO?

Yes - with 0.95 V typical V_GS(TH) and guaranteed turn-on at V_GS ≥ 2.5 V, the DMN2053U-13 achieves 35 mΩ R_DS(ON) at 4.5 V and remains fully enhanced at 3.3 V (R_DS(ON) ≈ 48 mΩ). This enables direct drive without external level shifters in most 3.3 V systems.

Is thermal derating required when mounting on standard FR-4 PCB?

Yes - the 93°C/W R_θJA value assumes a 1-inch² copper pad. On standard 2 oz FR-4 with minimum recommended pads, R_θJA rises to 160°C/W. At 6.5 A, junction temperature exceeds 150°C unless ambient is kept below 40°C or airflow/heat sinking is added.

Does DMN2053U-13 include an integrated body diode, and what are its characteristics?

Yes - it integrates a monolithic body diode with 0.7 V typical forward voltage (V_SD) at 1 A and 6.8 ns reverse recovery time (t_RR). This supports freewheeling in buck converters and reverse-current blocking in battery paths, though external Schottky diodes may be preferred for ultra-low V_F or faster recovery.

DMN2053U-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 414 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 800mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN2053U-13 FAQ

1.How can I place an order for DMN2053U-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2053U-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2053U-13 reliable?

The price and inventory of DMN2053U-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2053U-13 is usually 5 days.

3.What payment methods are accepted for DMN2053U-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2053U-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2053U-13?

DMN2053U-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2053U-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2053U-13?

For technical support, including DMN2053U-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2053U-13 requirements.

6.How does Aetrix verify that DMN2053U-13 is sourced from the original manufacturer or authorized distributors?

All DMN2053U-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2053U-13 meets industry standards.

7.What is the process for return or replacement of DMN2053U-13?

All DMN2053U-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2053U-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2053U-13 part is unused and in its original packaging.

Return procedure for DMN2053U-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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