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Diodes Incorporated DMN2053UFDB-13
- Part No.:
- DMN2053UFDB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2053UFDB-13.pdf
- Description:
- MOSFET 2N-CH 20V 4.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,209
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Product details
Overview
DMN2053UFDB-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 20V VDSS, 35mΩ RDS(ON) @ VGS = 4.5V, and 4.6A continuous drain current at TA = +25°C. It serves as a compact, low-profile load switch in portable power adaptors and battery-powered systems requiring high-efficiency power path control.
For engineers reviewing the DMN2053UFDB-13 datasheet, DMN2053UFDB-13 pinout, DMN2053UFDB-13 application, or DMN2053UFDB-13 equivalent, key selection criteria include its 0.6mm max height, 4mm² PCB footprint, low gate charge (3.6nC @ VGS = 4.5V), and validated performance across -55°C to +150°C junction temperature range.
Technical Context
This dual N-channel MOSFET integrates two independent switching elements sharing a common source configuration in a single 2.0mm × 2.0mm U-DFN package. Its gate threshold voltage (0.4–1.0V) enables direct drive from 1.8V/2.5V logic, while low input capacitance (369pF) and fast switching (tD(ON) = 2.6ns, tF = 3.6ns) support high-frequency DC-DC and load-switching topologies.
The device features matched on-resistance characteristics between channels, with RDS(ON) tightly specified at 23–35mΩ @ 4.5V and 30–43mΩ @ 2.5V. Thermal resistance is optimized for FR-4 PCBs: RθJA = 110°C/W with 1-inch² copper pad, enabling 1.14W steady-state dissipation without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Supports input rails up to 18V with 10% margin for transient spikes in USB PD and portable power applications. |
| RDS(ON) @ 4.5V | 35mΩ max - Limits conduction loss to <0.72W at 4.6A, critical for thermally constrained space-constrained designs. |
| Qg @ 4.5V | 3.6nC - Enables efficient gate driving with low-power controllers; reduces switching loss in 1–3MHz DC-DC converters. |
| Ciss | 369pF - Minimizes Miller effect and improves noise immunity in high-dV/dt environments like motor drivers and LED dimmers. |
| TJ Range | -55°C to +150°C - Qualified for industrial and extended-temperature automotive accessory modules without derating. |
| Package | U-DFN2020-6 (Type B) - 2.0mm × 2.0mm × 0.6mm footprint fits ultra-thin devices; requires no through-hole vias or thermal pads beyond standard layout. |
Pinout & Package
U-DFN2020-6 (Type B) is a leadless, bottom-terminated surface-mount package with six terminals arranged in a 2×3 array. The package uses NiPdAu-plated copper leadframe, complies with J-STD-020 Level 1 moisture sensitivity, and has UL 94V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | Primary high-side switching node; connects to input rail in high-side load switch configurations. |
| S1 | Source of Channel 1 | Common source terminal shared with S2; tied to ground or system return path in dual-channel operation. |
| G1 | Gate of Channel 1 | Independent control input for Channel 1; accepts 1.8V–4.5V logic-level drive without level-shifting. |
| D2 | Drain of Channel 2 | Second high-side switching node; enables redundant or parallel power path control in fault-tolerant designs. |
| S2 | Source of Channel 2 | Internally bonded to S1; ensures matched channel characteristics and eliminates floating source issues. |
| G2 | Gate of Channel 2 | Independent control input for Channel 2; supports staggered turn-on/tailored sequencing in multi-rail systems. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile 0.6mm max height | Enables integration into <1.0mm-thick consumer electronics such as wireless earbuds and wearables without mechanical interference. |
| 4mm² PCB footprint | Reduces board area by >60% vs. SO-8 or TSOP-6 equivalents-critical for space-constrained USB-C accessories and IoT sensors. |
| Lead-free & halogen-free "Green" construction | Meets RoHS 3 (2015/863/EU), JEDEC J-STD-020, and automotive AEC-Q200 stress test requirements out-of-box. |
| Low input capacitance (Ciss = 369pF) | Reduces gate drive power consumption and EMI generation in battery-powered systems operating at ≥2MHz switching frequencies. |
| Matched dual-channel RDS(ON) | Ensures balanced current sharing in paralleled configurations; eliminates need for external balancing resistors in dual-load applications. |
Applications
| USB-C Power Delivery Adaptors | Smartphone Battery Protection Circuits |
|---|---|
|
Use Scenario: Isolating VBUS paths during cable insertion/removal and managing dual-role power negotiation. IC Role / Device Role / Timing Role: Dual-channel high-side load switch controlling upstream/downstream VBUS routing with independent enable timing. Use Value: Prevents backfeed and inrush surges using sub-10ns turn-off fall time and body diode reverse recovery (tRR = 6.0ns). |
Use Scenario: Enabling/disabling charging and system power rails under MCU supervision during sleep/wake transitions. IC Role / Device Role / Timing Role: Low-voltage load switch interfacing directly with 1.8V GPIOs to gate battery current flow with minimal leakage. Use Value: Achieves <1µA off-state IDSS and 0.4V gate-source threshold-enabling reliable control from ultra-low-power microcontrollers. |
| Wireless Earbud Charging Cases | Industrial Sensor Node Power Management |
|
Use Scenario: Managing power delivery to multiple earbuds simultaneously while minimizing thermal buildup in sealed enclosures. IC Role / Device Role / Timing Role: Dual independent switches regulating charging current to left/right earbud batteries with shared thermal path. Use Value: 110°C/W RθJA with 1-inch² copper allows 4.2A continuous operation at ambient ≤60°C without heatsinking. |
Use Scenario: Sequencing power to RF transceivers, ADCs, and memory in battery-operated environmental monitoring nodes. IC Role / Device Role / Timing Role: Precision-controlled power gating element supporting programmable wake-up intervals and low-quiescent-current sleep modes. Use Value: 0.0065g mass and 2.0mm × 2.0mm footprint minimize PCB weight and area-key for drone-mounted and handheld sensor platforms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2056UFD-7 | Single-channel, same 20V/35mΩ spec but higher Qg (4.5nC) and larger U-DFN2020-6 (Type A) footprint. | Lacks dual-channel independence; requires two devices for identical functionality, increasing board area and BOM count. | Select only when single-switch redundancy suffices and layout allows extra 0.2mm pitch tolerance. |
| AOB2036L | 20V dual N-channel in TSOP-6; RDS(ON) = 28mΩ @ 4.5V but 1.1mm height and 3× larger footprint (5.0mm × 6.0mm). | Not suitable for ultra-thin designs; higher thermal resistance (RθJA = 160°C/W) limits current handling in confined spaces. | Prefer only if legacy TSOP-6 reflow compatibility or manual inspection access is required. |
Compared with DMN2053UFDB-13, DMN2056UFD-7 increases gate drive energy and doubles component count for dual-path control, while AOB2036L sacrifices 70% board area and 32% thermal efficiency-making DMN2053UFDB-13 optimal for miniaturized, high-density power management.
Availability
DMN2053UFDB-13 is available at Aetrix Electronics and suitable for USB-C power adaptors, smartphone battery protection circuits, wireless earbud charging cases, and industrial sensor node power management requiring stable component supply across production lifecycles.
Supply support for DMN2053UFDB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
The DMN2053UFDB belongs to Diodes' U-DFN Logic-Level MOSFET product line, engineered specifically for space-constrained, battery-powered applications demanding low RDS(ON), minimal gate charge, and robust thermal performance in sub-1mm profiles.
FAQ
What is the maximum continuous drain current for DMN2053UFDB-13 at 70°C ambient?
The maximum continuous drain current is 3.7A at TA = +70°C with 2oz copper on FR-4 PCB and minimum recommended pad layout. This derating reflects thermal limits imposed by RθJA = 153°C/W under standard mounting conditions, not device degradation.
Does DMN2053UFDB-13 support 1.8V logic-level gate drive?
Yes-its gate threshold voltage ranges from 0.4V to 1.0V, and RDS(ON) is specified at 43mΩ @ VGS = 2.5V and 56mΩ @ VGS = 1.8V with ID = 2A. This enables direct interface with 1.8V microcontrollers without level shifters.
Is the U-DFN2020-6 (Type B) package compatible with standard reflow profiles?
Yes-the package meets J-STD-020 Level 1 moisture sensitivity and is qualified for standard lead-free reflow (peak 260°C, 60s above 217°C). Its NiPdAu finish ensures solderability per MIL-STD-202, Method 208 without pre-baking.
How does the dual-channel architecture improve reliability in load-switch applications?
The integrated dual structure shares thermal mass and ensures matched RDS(ON) and switching timing between channels. This eliminates current imbalance risks in parallel configurations and reduces failure modes associated with discrete dual-MOSFET layouts, such as gate drive skew or thermal runaway.
DMN2053UFDB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V
- Power - Max:
- 820mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN2053UFDB-13 FAQ
1.How can I place an order for DMN2053UFDB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2053UFDB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2053UFDB-13 reliable?
The price and inventory of DMN2053UFDB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2053UFDB-13 is usually 5 days.
3.What payment methods are accepted for DMN2053UFDB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2053UFDB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2053UFDB-13?
DMN2053UFDB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2053UFDB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2053UFDB-13?
For technical support, including DMN2053UFDB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2053UFDB-13 requirements.
6.How does Aetrix verify that DMN2053UFDB-13 is sourced from the original manufacturer or authorized distributors?
All DMN2053UFDB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2053UFDB-13 meets industry standards.
7.What is the process for return or replacement of DMN2053UFDB-13?
All DMN2053UFDB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2053UFDB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2053UFDB-13 part is unused and in its original packaging.
Return procedure for DMN2053UFDB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2053UFDB-13 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
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