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Diodes Incorporated DMN2053UFDB-7
- Part No.:
- DMN2053UFDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2053UFDB-7.pdf
- Description:
- MOSFET 2N-CH 20V 4.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,621
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Product details
Overview
DMN2053UFDB from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type B) package, rated for 20V VDSS, 35mΩ RDS(ON) @ 4.5V VGS, and 4.6A ID at TA = +25°C. It delivers low on-resistance and low input capacitance for high-efficiency load switching in portable power adaptors and battery-powered systems.
For engineers reviewing the DMN2053UFDB datasheet, DMN2053UFDB pinout, DMN2053UFDB application, or DMN2053UFDB equivalent, key selection criteria include its dual-channel layout, 0.6mm max height for space-constrained PCBs, thermal resistance of 110°C/W (with copper plate), and guaranteed RDS(ON) down to 1.8V gate drive - critical for low-voltage logic-level control in modern power management.
Technical Context
This dual N-channel MOSFET integrates two independent silicon die in a single 2.0mm × 2.0mm U-DFN package with exposed drain pads for thermal performance. Each channel supports 20V breakdown voltage and operates with gate threshold voltage (VGS(TH)) between 0.4V and 1.0V, enabling reliable turn-on from 1.8V–4.5V logic sources.
Dynamic parameters include Ciss = 369pF, Qg = 3.6nC @ 4.5V, tr = 3.0ns, and tf = 3.6ns - optimized for fast switching with minimal gate drive loss. The device features integrated body diodes with VSD = 0.7–1.2V @ 1A and tRR = 6.0ns, supporting synchronous rectification and bidirectional current paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports 12V/15V rail switching without avalanche stress in portable power systems |
| RDS(ON) @ 4.5V | 35mΩ max - enables ≤160mW conduction loss at 4.6A, reducing thermal load on compact PCBs |
| ID (TA = +25°C) | 4.6A - sufficient for USB-C PD sink-side load switches and multi-rail PMIC output stages |
| Ciss | 369pF - low input capacitance minimizes gate drive current and speeds up switching transitions |
| Qg @ 4.5V | 3.6nC - reduces gate driver power consumption and simplifies low-power MCU GPIO direct drive |
| RθJA (copper plate) | 110°C/W - allows 1.14W continuous dissipation with basic thermal relief, suitable for unheatsinked designs |
| Package | U-DFN2020-6 (Type B) - 4mm² footprint, 0.6mm max height, compatible with automated SMT assembly |
Pinout & Package
U-DFN2020-6 (Type B) is a 2.0mm × 2.0mm, 0.6mm maximum height, lead-free, halogen-free surface-mount package with six terminals and dual exposed drain pads for enhanced thermal conduction. Pin 1 is marked by a corner chamfer and located at bottom-left in top view.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | Primary high-current output node; connected to internal die and exposed pad for thermal path |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to ground or return path in high-side switch configurations |
| G1 | Gate of Channel 1 | Logic-level control input; requires <1.0V VGS(TH) for turn-on, compatible with 1.8V/3.3V MCUs |
| D2 | Drain of Channel 2 | Independent high-current output node; electrically isolated from D1 but shares thermal pad |
| S2 | Source of Channel 2 | Reference node for Channel 2; enables dual independent load switching or parallel operation |
| G2 | Gate of Channel 2 | Independent logic-level control input; identical electrical characteristics to G1 for synchronized or separate control |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched MOSFETs in one 2.0×2.0mm package reduce board area vs. discrete dual-SOIC solutions by >75% |
| Low RDS(ON) @ 1.8V | 56mΩ max - ensures functional switching even under brown-out or low-VCC conditions in battery systems |
| Low-profile construction | 0.6mm max height - enables use in ultra-thin devices such as wearables and slim power banks |
| Green, RoHS-compliant materials | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752A Tier 1 requirements |
| Thermally enhanced layout | Exposed D1/D2 pads and NiPdAu-plated terminals support 110°C/W RθJA with 1-inch² copper plate |
Applications
| USB-C Power Delivery Sink Switching | Multi-Rail PMIC Output Stage |
|---|---|
|
Use Scenario: Controlling power path from USB-C port to system rails (VBUS, VCONN, VSAFEOUT) in portable devices. IC Role / Device Role: Dual-channel load switch managing independent 5V/9V/15V/20V input routing and overcurrent protection. Use Value: 35mΩ RDS(ON) limits voltage drop to <175mV at 5A, preserving PD negotiation margins and minimizing heat in sealed enclosures. |
Use Scenario: Enabling/disabling secondary power domains (e.g., display, audio, sensor subsystems) in battery-powered SoC platforms. IC Role / Device Role: Dual independent power gate controlling sequencing and isolation between PMIC outputs and downstream loads. Use Value: Independent G1/G2 control allows staggered power-up and fault containment - preventing single-point failure propagation across domains. |
| Portable Power Adapter Secondary Side | Smart Battery Protection Circuit |
|
Use Scenario: Replacing mechanical relays or discrete MOSFETs in compact AC/DC adapters delivering 20W–45W to laptops and tablets. IC Role / Device Role: Synchronous rectifier and output load switch handling 20V/3A output with minimal conduction loss. Use Value: 43mΩ RDS(ON) @ 2.5V VGS enables efficient operation directly from adapter controller's low-voltage gate drive, eliminating level-shifters. |
Use Scenario: Implementing cell balancing, charge/discharge path control, and short-circuit isolation in 2S–3S Li-ion battery packs. IC Role / Device Role: Dual-channel reverse-polarity and overcurrent protection switch placed between battery terminals and protection IC. Use Value: Matched RDS(ON) channels ensure balanced current sharing during parallel discharge; 20V rating covers full 3S pack voltage (12.6V nominal, 13.2V max). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2056UFD-7 | Single-channel, same 20V/35mΩ spec but no second FET; 20% larger footprint (U-DFN2030-6) | Lacks dual-channel independence; requires two units for equivalent functionality | Select only if board layout permits duplication and thermal budget allows higher RθJA (130°C/W) |
| NTMFS4C06NT1G | 25V rating, 2.9mΩ RDS(ON) @ 10V, but 4.5V RDS(ON) = 4.2mΩ - not specified below 2.5V | Higher voltage margin but undefined 1.8V/2.5V turn-on behavior; unsuitable for low-VGS logic control | Prefer only in 24V industrial systems where gate drive ≥4.5V is guaranteed and sub-2V operation is unnecessary |
Compared with DMN2053UFDB, DMN2056UFD-7 increases PCB area and component count for dual functionality, while NTMFS4C06NT1G sacrifices guaranteed low-voltage turn-on for lower RDS(ON) - making DMN2053UFDB uniquely suited for compact, battery-fed designs requiring dual-channel logic-level control.
Availability
DMN2053UFDB is available at Aetrix Electronics and suitable for USB-C power delivery sink switching, multi-rail PMIC output staging, and portable power adapter secondary-side load management requiring stable component supply and long-term lifecycle continuity.
Supply support for DMN2053UFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN2053UFDB belongs to Diodes' U-DFN logic-level MOSFET product line, engineered specifically for space-constrained, high-efficiency power management in portable and battery-powered electronics.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMN2053UFDB?
The DMN2053UFDB has an operating junction temperature range of –55°C to +150°C. Its RDS(ON) increases by ~1.5× from 25°C to 125°C at VGS = 4.5V, per Figure 6. Derating follows standard FR-4 PCB thermal models: with 1-inch² copper, continuous power drops from 1.14W at 25°C to ~0.5W at 100°C ambient, based on RθJA = 110°C/W and TJ(max) = 150°C.
Can DMN2053UFDB be used in automotive applications?
The standard DMN2053UFDB is not AEC-Q200 qualified. However, Diodes offers the automotive-grade variant DMN2053UFDBQ, which undergoes extended temperature testing (–40°C to +125°C), humidity robustness validation, and PPAP documentation. For non-safety-critical infotainment or accessory power modules, qualification review with Diodes' automotive team is required before deployment.
How does the dual-channel configuration affect gate drive requirements?
Each channel (G1 and G2) has independent gate terminals with identical electrical specs: VGS(TH) = 0.4–1.0V, Qg = 3.6nC @ 4.5V, and Rg = 4.1Ω. Driving both gates simultaneously doubles total gate charge (7.2nC), but does not increase per-channel drive strength requirements. Standard 3.3V GPIOs with ≥10mA sink/source capability can drive both channels directly without external buffers.
Is the U-DFN2020-6 (Type B) package compatible with standard reflow profiles?
Yes - the U-DFN2020-6 (Type B) package is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60s above 217°C). Its NiPdAu-plated terminals meet MIL-STD-202 Method 208 solderability requirements, and the 0.6mm profile avoids tombstoning when using recommended 0.30mm stencil apertures and 0.15mm paste thickness.
DMN2053UFDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V
- Power - Max:
- 820mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN2053UFDB-7 FAQ
1.How can I place an order for DMN2053UFDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2053UFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2053UFDB-7 reliable?
The price and inventory of DMN2053UFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2053UFDB-7 is usually 5 days.
3.What payment methods are accepted for DMN2053UFDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2053UFDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2053UFDB-7?
DMN2053UFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2053UFDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2053UFDB-7?
For technical support, including DMN2053UFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2053UFDB-7 requirements.
6.How does Aetrix verify that DMN2053UFDB-7 is sourced from the original manufacturer or authorized distributors?
All DMN2053UFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2053UFDB-7 meets industry standards.
7.What is the process for return or replacement of DMN2053UFDB-7?
All DMN2053UFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2053UFDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2053UFDB-7 part is unused and in its original packaging.
Return procedure for DMN2053UFDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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