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Diodes Incorporated DMN2053UFDBQ-13
- Part No.:
- DMN2053UFDBQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMN2053UFDBQ-13.pdf
- Description:
- MOSFET 2N-CH 20V 4.6A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,156
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Product details
Overview
DMN2053UFDBQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a U-DFN2020-6 (Type B) package, rated for 20V VDSS, 35 mΩ RDS(ON) @ 4.5V VGS, and 4.6A continuous drain current at +25°C. It delivers low on-resistance with fast switching for compact, high-efficiency load switching in portable power adaptors and automotive-grade power management circuits.
For engineers reviewing the DMN2053UFDBQ-13 datasheet, DMN2053UFDBQ-13 pinout, DMN2053UFDBQ-13 application, or DMN2053UFDBQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 0.6 mm max height, 4 mm² PCB footprint, and dual-channel configuration enabling space-constrained dual-load control without discrete duplication.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel has separate source, drain, and gate terminals. Its 20V breakdown voltage and sub-1V gate threshold (0.4–1.0V) support direct logic-level drive from 1.8V/2.5V/3.3V microcontrollers and PMICs.
Thermal performance is optimized for FR-4 PCB mounting: RθJA = 110°C/W with 1-inch² copper plate, and 153°C/W with minimum pad layout. Dynamic parameters-including 3.6 nC total gate charge at 4.5V and 32 pF Crss-enable efficient operation in 1–5 MHz DC-DC and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Supports input rails up to 18V nominal with 10% margin for transient spikes in USB PD and automotive accessory systems. |
| RDS(ON) @ 4.5V | 35 mΩ - Enables ≤175 mW conduction loss at 4.6A, critical for thermally constrained portable adaptor secondary-side switches. |
| ID (max, +25°C) | 4.6 A - Sustains full-rated load current per channel without derating on standard 2oz FR-4 with recommended pad layout. |
| Ciss | 369 pF - Low input capacitance reduces gate drive power and improves turn-on speed in high-frequency synchronous rectification. |
| Qg @ 4.5V | 3.6 nC - Minimizes required gate driver current (e.g., <1 mA average at 1 MHz), easing integration with low-power MCU GPIOs. |
| TJ Range | −55°C to +150°C - Validated operation across automotive under-hood and industrial ambient conditions per AEC-Q101 stress testing. |
Pinout & Package
Package: U-DFN2020-6 (Type B), 2.0 × 2.0 × 0.6 mm, lead-free NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2-enables independent load control per channel. |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to ground (low-side) or output rail (high-side) depending on topology. |
| G1 | Gate of Channel 1 | Logic-level control input; threshold range 0.4–1.0V ensures reliable turn-on with 1.8V I/O domains. |
| D2 | Drain of Channel 2 | Independent power path-no internal connection to D1-supports dual-rail or redundant load switching. |
| S2 | Source of Channel 2 | Separate reference for Channel 2; allows asymmetrical grounding or floating configurations (e.g., dual high-side). |
| G2 | Gate of Channel 2 | Isolated control input; enables independent PWM or enable sequencing between channels without crosstalk. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Eliminates need for two discrete MOSFETs and associated layout area-reduces BOM count and routing complexity in dual-load systems. |
| 0.6 mm maximum height | Enables ultra-thin end equipment such as slim power banks and wearable charging modules where Z-height is constrained. |
| AEC-Q101 qualified | Validated for automotive applications including infotainment power rails and ADAS camera module supplies-PPAP-capable with IATF 16949 manufacturing. |
| 4 mm² PCB footprint | Reduces board area by >50% versus SO-8 or TSOP-6 dual MOSFETs-critical for space-limited USB-C adapter PCBs. |
| Low Coss (54 pF) | Minimizes switching losses during hard commutation events, improving efficiency in buck converter synchronous rectifiers. |
Applications
| USB-C Power Delivery Adaptors | Automotive Infotainment Power Rails |
|---|---|
|
Use Scenario: Dual-path load switching for independent control of Type-C port VBUS and auxiliary 5V rail in compact travel adapters. IC Role / Device Role: Dual N-channel MOSFET providing low-loss, logic-level–driven high-side switching for both rails. Use Value: 35 mΩ RDS(ON) limits thermal rise to <15°C at 4.6A, enabling fanless operation in sealed enclosures. |
Use Scenario: Redundant 5V supply switching for head unit display and audio subsystems with fault isolation. IC Role / Device Role: Dual-channel load switch delivering AEC-Q101–compliant power gating with independent enable control. Use Value: −55°C to +150°C operation ensures reliability across vehicle cabin temperature extremes without derating. |
| Portable Medical Battery Packs | Industrial IoT Sensor Hubs |
|
Use Scenario: Isolated battery discharge paths for primary and backup Li-ion cells feeding diagnostic and telemetry circuits. IC Role / Device Role: Dual N-MOSFET configured as back-to-back high-side switches for bidirectional blocking and controlled discharge. Use Value: 43 mΩ RDS(ON) @ 2.5V VGS supports direct drive from low-voltage fuel gauges, eliminating level-shifter components. |
Use Scenario: Power sequencing of BLE radio, environmental sensor array, and secure element in edge-node gateways. IC Role / Device Role: Dual load switch enabling staggered power-up and independent fault shutdown per subsystem. Use Value: 3.6 nC Qg allows clean, jitter-free enable timing using standard MCU GPIOs without external drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2056UFD-7 | Single-channel, same package and RDS(ON), but lacks second channel; higher RDS(ON) (40 mΩ) at 2.5V. | Requires two units for dual-load function-increases PCB area and BOM count. | Select only when single-channel operation suffices and board area permits duplication. |
| SI6926ADQ-T1-GE3 | 20V dual N-MOSFET, but RDS(ON) = 48 mΩ @ 4.5V and Qg = 5.2 nC; not AEC-Q101 qualified. | Lacks automotive qualification and exhibits higher switching losses at 1–3 MHz frequencies. | Acceptable for cost-sensitive consumer electronics where AEC-Q101 and low Qg are non-critical. |
Compared with DMN2053UFDBQ-13, DMN2056UFD-7 increases system footprint and component count for dual functionality, while SI6926ADQ-T1-GE3 trades off automotive compliance and switching efficiency for lower unit cost in non-automotive designs.
Availability
DMN2053UFDBQ-13 is available at Aetrix Electronics and suitable for USB-C power adaptors, automotive infotainment systems, and portable medical battery packs requiring stable component supply and AEC-Q101 assurance.
Supply support for DMN2053UFDBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and consumer markets.
The DMN2053UFDBQ belongs to Diodes' U-DFN dual MOSFET product line, engineered specifically for space-constrained, high-efficiency load switching in automotive and portable power applications where low RDS(ON), logic-level drive, and AEC-Q101 compliance are mandatory.
FAQ
Is DMN2053UFDBQ-13 suitable for high-side load switching?
Yes-each channel operates as an independent N-channel MOSFET with no internal source tie. For high-side use, a gate driver capable of supplying VGS ≥ VIN + VGS(TH) is required. The 1.0V max VGS(TH) and 4.5V-rated RDS(ON) make it compatible with bootstrap or charge-pump drivers in 5–12V rail applications.
What is the thermal performance on a minimal PCB pad layout?
With the minimum recommended FR-4 pad layout (2 oz copper), RθJA is 153°C/W. At 4.6A and 35 mΩ RDS(ON), power dissipation is 745 mW, resulting in a junction-to-ambient temperature rise of ~114°C-requiring ambient ≤36°C for TJ ≤150°C. Use of 1-inch² copper reduces rise to ~82°C.
Does the device include integrated ESD protection?
No-DMN2053UFDBQ-13 does not integrate ESD protection circuitry. Per the datasheet, gate-source leakage is specified at ±100 nA with VGS = ±12V, and absolute maximum VGSS is ±12V. External TVS diodes or series resistors are recommended for gate protection in noisy environments.
Can both channels be paralleled to increase current capacity?
No-channels are electrically isolated with separate drains, sources, and gates; paralleling would require matched VGS(TH) and RDS(ON) tracking, which is not characterized or guaranteed. The device is specified for 4.6A per channel, and thermal coupling in the shared die may cause uneven current sharing if externally paralleled.
DMN2053UFDBQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V
- Power - Max:
- 820mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DMN2053UFDBQ-13 FAQ
1.How can I place an order for DMN2053UFDBQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2053UFDBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2053UFDBQ-13 reliable?
The price and inventory of DMN2053UFDBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2053UFDBQ-13 is usually 5 days.
3.What payment methods are accepted for DMN2053UFDBQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2053UFDBQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2053UFDBQ-13?
DMN2053UFDBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2053UFDBQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2053UFDBQ-13?
For technical support, including DMN2053UFDBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2053UFDBQ-13 requirements.
6.How does Aetrix verify that DMN2053UFDBQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN2053UFDBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2053UFDBQ-13 meets industry standards.
7.What is the process for return or replacement of DMN2053UFDBQ-13?
All DMN2053UFDBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2053UFDBQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2053UFDBQ-13 part is unused and in its original packaging.
Return procedure for DMN2053UFDBQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2053UFDBQ-13 Tags
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