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Diodes Incorporated DMN2053UVT-13
- Part No.:
- DMN2053UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2053UVT-13.pdf
- Description:
- MOSFET 2N-CH 20V 4.6A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:4,003
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Product details
Overview
DMN2053UVT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TSOT26 package, rated for 20V VDSS, 35mΩ RDS(ON) @ VGS = 4.5V, 4.6A continuous drain current at +25°C, and optimized for DC-DC converters and LED backlighting power switches.
For engineers reviewing the DMN2053UVT-13 datasheet, DMN2053UVT-13 pinout, DMN2053UVT-13 application, or DMN2053UVT-13 equivalent, key selection criteria include low-voltage gate drive compatibility (1.8V–4.5V), fast switching (tR = 3.0ns), low input capacitance (Ciss = 369pF), thermal resistance (RθJA = 108°C/W with 1-inch² copper), and RoHS-compliant green packaging.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 3.6nC) and fast turn-on/turn-off timing (tD(ON) = 2.6ns, tD(OFF) = 12.5ns). Its threshold voltage range (0.4–1.0V) enables reliable operation with logic-level gate drivers.
The device integrates a body diode with VSD = 0.7–1.2V at 1A and reverse recovery charge QRR = 0.9nC, supporting synchronous rectification and flyback topologies where diode conduction occurs during dead time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports 12V rail and 5V logic-supplied buck converters without derating |
| RDS(ON) | 35mΩ @ VGS = 4.5V - limits I²R loss to ≤0.79W at 4.6A, enabling compact thermal design |
| ID (TA = +25°C) | 4.6A - sufficient for mid-power portable DC-DC stages (e.g., 3.3V/3A output) |
| Ciss | 369pF - reduces gate drive power requirement and improves EMI margin in high-frequency switching |
| tR/tF | 3.0ns / 3.6ns - enables >2MHz operation with minimal switching loss in PWM controllers |
| RθJA | 108°C/W - allows 1.1W dissipation with ≤117°C junction rise above ambient on FR-4 with 1-inch² copper |
| VGS(TH) | 0.4–1.0V - ensures full enhancement with 1.8V GPIO or low-VCC microcontroller outputs |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), lead-free matte tin finish, moisture sensitivity level 1, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate | Primary control terminal; accepts 0–12V gate drive; low Ciss minimizes Miller effect |
| 2 (S1) | Source | Reference node for gate drive; tied to power ground in low-side switch configuration |
| 3 (D1) | Drain | High-current output path; connected to switched rail (e.g., LED anode or buck inductor) |
| 4 (D2) | Drain (parallel) | Internally bonded to D1; doubles current-carrying capability and thermal spreading |
| 5 (S2) | Source (parallel) | Internally bonded to S1; reduces source inductance and improves gate control stability |
| 6 (G2) | Gate (parallel) | Internally bonded to G1; lowers gate resistance (Rg = 4.1Ω) for faster edge rates |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 43mΩ - enables use with 2.5V logic or battery-powered systems down to 2.7V |
| Ultra-low input capacitance | Ciss = 369pF - cuts gate drive energy by >40% vs. comparable 20V MOSFETs, reducing driver stress |
| Fast switching with low Qgd | Qgd = 1.0nC - suppresses Miller plateau duration, improving duty cycle fidelity in high-frequency PWM |
| Green, halogen-free construction | <900ppm Br+Cl, <1000ppm Sb - meets IPC-1752A Class 3 reporting and automotive ELV compliance |
| Thermally enhanced layout | Dual-drain/dual-source terminals - lowers effective RDS(ON) and junction-to-board thermal resistance |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Driving white LED strings in tablet displays using constant-current buck topology. IC Role / Device Role: Low-side PWM switch controlling inductor current and regulating LED current via feedback loop. Use Value: 35mΩ RDS(ON) at 4.5V gate drive minimizes conduction loss in 3A–4A backlight rails, extending battery life by ≥8% vs. 50mΩ alternatives. | Use Scenario: Hot-swap protection and load switching in USB-C PD sink applications with 5–20V input range. IC Role / Device Role: Reverse-polarity and overcurrent protected power path switch upstream of PD controller. Use Value: 20V rating and 1.4A body diode forward current support safe 5V/9V/15V/20V auto-negotiated PD profiles without external diode. |
| Portable DC-DC Converter | Smartphone Power Management |
Use Scenario: High-efficiency 1.8V/2A buck converter supplying SoC core voltage in wearables. IC Role / Device Role: Synchronous rectifier in dual-MOSFET buck stage, replacing Schottky diode. Use Value: Body diode VSD = 0.7V and QRR = 0.9nC reduce reverse recovery loss, improving efficiency by 2.3% at 1MHz switching. | Use Scenario: Load switch for camera module or RF front-end power domain in LTE/5G smartphones. IC Role / Device Role: Controlled power enable/disconnect with fast turn-on (tD(ON) = 2.6ns) and low leakage (<1µA). Use Value: 100nA IGSS and 1.0µA IDSS ensure <10µW standby loss per switch, critical for always-on sensor subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage power switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2056UVT-13 | RDS(ON) = 28mΩ @ 4.5V, higher ID (5.2A), same TSOT26 package | Better conduction efficiency in >4A loads; slightly higher Ciss (420pF) | Select when thermal headroom is constrained and gate drive can support identical voltage levels. |
| AO3414 | RDS(ON) = 44mΩ @ 4.5V, lower Qg (2.4nC), same 20V rating and SOT-23 footprint | Lower gate drive demand but higher conduction loss; not pin-compatible due to different pinout (G-S-D vs. G-S-D-D-S-G) | Choose only if board redesign permits SOT-23 layout and system prioritizes gate drive simplicity over efficiency. |
Compared with DMN2056UVT-13, the DMN2053UVT-13 trades 7mΩ higher RDS(ON) for 0.5nC lower Qg, favoring high-frequency, low-duty-cycle applications; versus AO3414, it delivers 9mΩ lower on-resistance and dual-terminal layout for improved thermal and EMI performance in space-constrained layouts.
Availability
DMN2053UVT-13 is available at Aetrix Electronics and suitable for LED backlighting, portable DC-DC converters, and USB-C power delivery systems requiring stable component supply across production ramps and long-life designs.
Supply support for DMN2053UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMN2053UVT belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power switching in space-constrained portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current at +70°C ambient?
The DMN2053UVT-13 supports 3.7A continuous drain current at TA = +70°C with standard FR-4 PCB layout and 2oz copper. This derating reflects thermal limitations under steady-state conduction, not device failure-junction temperature remains within -55°C to +150°C operating range when power dissipation stays below 1.1W.
Can this MOSFET be driven directly by a 1.8V GPIO?
Yes-the gate threshold voltage ranges from 0.4V to 1.0V, and RDS(ON) is specified at 56mΩ @ VGS = 1.8V, ID = 2.0A. At 1.8V drive, the device fully enhances and sustains usable current, though conduction loss increases ~60% versus 4.5V operation.
Is the TSOT26 package compatible with standard SOT-23 reflow profiles?
Yes-TSOT26 uses the same JEDEC-standard reflow profile as SOT-23, including peak temperature ≤260°C for ≤30 seconds. Its thinner profile (0.6mm max height) requires no adjustment to stencil aperture or placement offset, but board-level thermal relief must accommodate dual-drain/source terminals for optimal solder joint reliability.
Does the body diode support synchronous rectification?
Yes-the integrated body diode has VSD = 0.7V typical at 1A and reverse recovery charge QRR = 0.9nC, enabling efficient synchronous rectification in buck and flyback topologies up to 2MHz. Its low QRR minimizes shoot-through risk and reduces EMI compared to discrete Schottky solutions.
DMN2053UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN2053UVT-13 FAQ
1.How can I place an order for DMN2053UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2053UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2053UVT-13 reliable?
The price and inventory of DMN2053UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2053UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN2053UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2053UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2053UVT-13?
DMN2053UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2053UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2053UVT-13?
For technical support, including DMN2053UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2053UVT-13 requirements.
6.How does Aetrix verify that DMN2053UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN2053UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2053UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN2053UVT-13?
All DMN2053UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2053UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2053UVT-13 part is unused and in its original packaging.
Return procedure for DMN2053UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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