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Diodes Incorporated DMN2053UVT-7
- Part No.:
- DMN2053UVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN2053UVT-7.pdf
- Description:
- MOSFET 2N-CH 20V 4.6A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:5,721
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Product details
Overview
DMN2053UVT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 20 V VDSS, 35 mΩ RDS(ON) @ 4.5 V VGS, 4.6 A ID at 25°C, TSOT26 package, and fast switching (tF = 3.6 ns). It serves as a synchronous rectifier or load switch in compact DC-DC converters.
For engineers reviewing the DMN2053UVT-7 datasheet, DMN2053UVT-7 pinout, DMN2053UVT-7 application, or DMN2053UVT-7 equivalent, key selection criteria include low-voltage gate drive compatibility (1.8 V–4.5 V), thermal resistance (RθJA = 108 °C/W with copper pad), and body diode performance (VSD = 0.7 V @ 1 A).
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 3.6 nC) and low output capacitance (Coss = 54 pF), enabling efficient operation in 1–3 MHz buck converters. Its 20 V rating targets single-cell Li-ion and USB-powered systems.
The device integrates a co-packaged body diode with 1.4 A continuous forward current capability and 6.0 ns reverse recovery time, supporting synchronous rectification without external diode replacement. Gate threshold voltage (VGS(TH) = 0.4–1.0 V) ensures reliable turn-on with logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Supports input rails up to 18 V in battery-powered DC-DC stages |
| RDS(ON) | 35 mΩ @ 4.5 V VGS - Enables <150 mW conduction loss at 4.6 A in compact layouts |
| ID | 4.6 A @ 25°C - Sustains peak load currents in portable backlight and PMIC applications |
| Ciss | 369 pF - Limits gate drive power requirement for 3 MHz switching |
| tF | 3.6 ns - Reduces switching transition losses in high-frequency PWM control |
| RθJA | 108 °C/W - Requires only 1-inch² 2 oz copper pad for 1.1 W dissipation at ambient |
| VGS(TH) | 0.4–1.0 V - Ensures full enhancement with 1.8 V GPIO or low-voltage controller outputs |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), RoHS-compliant matte tin finish, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate | Primary control terminal; accepts 0–12 V drive; low Ciss enables fast edge rates |
| 2 (S1) | Source | Reference node for gate drive; connected to power ground in high-side switch configurations |
| 3 (D1) | Drain | High-current output path; electrically tied to D2/S2 in dual-die layout |
| 4 (D2) | Drain | Second drain terminal; paralleled with D1 to reduce package inductance and improve current sharing |
| 5 (S2) | Source | Secondary source terminal; bonded to S1 internally; enhances thermal and current distribution |
| 6 (G2) | Gate | Second gate terminal; internally connected to G1; reduces gate loop inductance for high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5 V VGS | 43 mΩ - Enables use with 2.5 V microcontroller I/O without level-shifting |
| Low Qgd/Qg ratio | 1.0/3.6 nC - Improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
| Body diode tRR | 6.0 ns - Minimizes reverse recovery loss in synchronous rectifier mode |
| Thermal resistance reduction | RθJA = 108 °C/W (vs. 173 °C/W standard layout) - Achieved via internal dual-drain/source bonding and optimized pad layout |
Applications
| LED Backlight Driver | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Driving white LED strings in thin-profile tablets using 3.3 V–5 V input with PWM dimming. IC Role / Device Role: Low-side synchronous rectifier in boost converter output stage. Use Value: 35 mΩ RDS(ON) limits conduction loss to <80 mW at 4 A, enabling >92% efficiency at 1 MHz switching. | Use Scenario: Load switching between USB-C port and system power rail with overcurrent protection. IC Role / Device Role: Single-pole, single-throw (SPST) power switch with fast fault response. Use Value: 1.8 V gate threshold allows direct control from USB PD controller GPIO; 22 A pulsed rating supports surge handling during hot-plug events. |
| Portable Audio Amplifier PSU | Wearable Sensor PMIC |
Use Scenario: Supplying clean 3.3 V bias to Class-D audio amplifier ICs in Bluetooth earbuds. IC Role / Device Role: High-efficiency buck converter main switch operating at 2.2 MHz. Use Value: 369 pF Ciss and 3.6 ns tR enable stable 2.2 MHz operation with minimal gate drive loss and EMI. | Use Scenario: Regulating power to ultra-low-power inertial measurement units (IMUs) in fitness trackers. IC Role / Device Role: Load switch controlling power to sensor subsystem during sleep/wake cycles. Use Value: 100 nA IGSS and 1 µA IDSS ensure <1 µA quiescent current in off-state, preserving battery life over multi-week standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2056UVT-7 | RDS(ON) = 28 mΩ @ 4.5 V (lower), but higher Ciss = 440 pF and Qg = 4.2 nC | Better conduction loss at high load; less suitable for >2 MHz switching due to increased gate drive demand | Select when efficiency at 3–5 A DC load dominates over switching frequency requirements |
| AO3414 | RDS(ON) = 44 mΩ @ 4.5 V (higher), same TSOT26 package, but no dual-drain/source terminals | Higher conduction loss and thermal resistance (RθJA = 150 °C/W); lacks parallel terminal architecture for low-inductance layouts | Acceptable for cost-sensitive, lower-frequency (<1 MHz) applications where layout space permits larger copper area |
Compared with DMN2053UVT-7, DMN2056UVT-7 trades higher gate charge for lower on-resistance-favoring high-current DC operation-while AO3414 lacks dual-terminal construction and exhibits higher thermal impedance, limiting its use in thermally constrained, high-frequency designs.
Availability
DMN2053UVT-7 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery switching, and wearable sensor PMICs requiring stable component supply across production ramps and long-lifecycle programs.
Supply support for DMN2053UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN2053UVT-7 belongs to Diodes' "Ultra-Low RDS(ON) TrenchMOS" product line, engineered specifically for space-constrained, high-efficiency power conversion in portable and battery-powered electronics.
FAQ
What is the maximum safe operating junction temperature for DMN2053UVT-7?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A104. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating is required above +85°C ambient; at 100°C ambient, maximum continuous power must be reduced to ≤0.55 W using the 108 °C/W RθJA value.
Can DMN2053UVT-7 be used in a high-side switch configuration?
Yes-it supports high-side operation when driven by a gate driver capable of providing ≥20 V VGS relative to the source (e.g., bootstrap or isolated driver). The ±12 V VGS rating and low Qgd minimize Miller plateau effects, but source-referenced gate control requires careful layout to avoid shoot-through during transitions.
Does DMN2053UVT-7 have integrated ESD protection?
No-this MOSFET does not include on-chip ESD protection diodes. External TVS devices or series resistors are recommended on gate lines in handheld or connector-exposed applications. The gate oxide is rated for ±12 V, and unclamped human-body-model (HBM) ESD withstand is ≤2 kV per JEDEC JESD22-A114.
Is the TSOT26 package lead-free and RoHS compliant?
Yes-DMN2053UVT-7 uses matte tin annealed over copper leadframe and fully complies with EU RoHS Directive 2015/863/EU (RoHS 3), containing <100 ppm lead, <900 ppm bromine/chlorine, and <1000 ppm antimony. UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity confirm suitability for standard reflow processes.
DMN2053UVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 369pF @ 10V
- Power - Max:
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN2053UVT-7 FAQ
1.How can I place an order for DMN2053UVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2053UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2053UVT-7 reliable?
The price and inventory of DMN2053UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2053UVT-7 is usually 5 days.
3.What payment methods are accepted for DMN2053UVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2053UVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2053UVT-7?
DMN2053UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2053UVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2053UVT-7?
For technical support, including DMN2053UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2053UVT-7 requirements.
6.How does Aetrix verify that DMN2053UVT-7 is sourced from the original manufacturer or authorized distributors?
All DMN2053UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2053UVT-7 meets industry standards.
7.What is the process for return or replacement of DMN2053UVT-7?
All DMN2053UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2053UVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2053UVT-7 part is unused and in its original packaging.
Return procedure for DMN2053UVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2053UVT-7 Tags
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