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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2055U-7

Name: DMN2055U-7
Brand: Diodes Incorporated
SKU: DMN2055U-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2055U-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN2055U-7.pdf

Description:: MOSFET N-CH 20V 4.8A SOT23 T&R 3

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Product details

Overview

DMN2055U-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 20V V_DSS, 38mΩ R_DS(ON) at 4.5V V_GS, and 4.8A continuous drain current at 25°C - optimized for low-voltage power switching in portable and space-constrained DC-DC converters.

For engineers reviewing the DMN2055U-7 datasheet, DMN2055U-7 pinout, DMN2055U-7 application, or DMN2055U-7 equivalent, key selection criteria include its 2.5V gate threshold compatibility with 3.3V logic, 400pF input capacitance for fast switching, and thermal resistance of 113°C/W under enhanced PCB layout - critical for battery-powered load switching and USB power path control.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining controlled gate charge (Q_G = 4.3nC) and fast switching (t_R = 2.7ns, t_F = 4.4ns). Its 0.4–1.0V gate threshold enables reliable turn-on from 2.5V–4.5V microcontroller I/Os without level shifting.

The device integrates a body diode with 0.7–1.0V forward voltage and 6.8ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in compact buck regulators and power OR-ing circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V - supports 12V rail switching and USB 5V/3.3V system interfaces without derating
R_DS(ON)	38mΩ @ 4.5V V_GS - delivers ≤170mW conduction loss at 4.8A, enabling thermally constrained PCB layouts
I_D (max)	4.8A @ 25°C - sufficient for 5W load switching in handheld devices and IoT sensor nodes
Q_G	4.3nC - enables <100ns total switching transition with 10Ω gate driver, minimizing dynamic losses
C_iss	400pF - balances drive strength requirement and EMI control in high-frequency SMPS designs
V_GS(TH)	0.4–1.0V - ensures full enhancement with 1.8V/2.5V/3.3V logic families without external bias
P_D	1.2W with 1-inch² copper pad - allows >1A sustained current in standard FR-4 with minimal heatsinking

Pinout & Package

SOT23-3 surface-mount package with gull-wing leads, 0.008g mass, UL 94V-0 molded plastic housing, and matte tin–annealed copper leadframe for RoHS-compliant reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Return path for drain current; tied to ground or low-side reference	Low-inductance connection point for source return routing; internal bond wire directly linked to die substrate
2 (Gate)	Control terminal for channel conduction	High-impedance input requiring <100nA leakage; sensitive to ESD but compatible with direct MCU GPIO drive
3 (Drain)	Current output node; connected to load or power rail	Primary heat-generating terminal; designed for top-side thermal transfer via PCB copper pour

Key Features

Feature	Design Value
Low R_DS(ON) at 2.5V V_GS	45mΩ - enables efficient operation from 3.3V logic rails without gate boosting
Fast switching speed	t_D(ON) = 2.8ns, t_F = 4.4ns - reduces transition losses in 1–3MHz DC-DC converters
Low gate leakage	I_GSS ≤ ±100nA - prevents unintended turn-on in battery-critical standby modes
Green packaging	Halogen- and antimony-free, <900ppm Br/Cl, <1000ppm Sb - meets IPC-1752A Class 3 environmental compliance
ESD robustness	Human Body Model (HBM) ≥2kV - supports automated assembly without special handling

Applications

USB Power Switching

Battery Protection Circuit

Use Scenario: Selectively enabling/disabling VBUS power delivery in USB-C port controllers.

IC Role / Device Role: Low-side load switch controlling 5V/3A USB power path.

Use Value: 38mΩ R_DS(ON) limits voltage drop to <150mV at 4A, preserving USB voltage regulation margins.

Use Scenario: Isolating lithium-ion cell from charging circuit during overvoltage or overtemperature fault.

IC Role / Device Role: Primary discharge FET in integrated protection IC auxiliary path.

Use Value: 0.4–1.0V V_GS(TH) ensures clean turn-off when gate is pulled to 0V by protection ASIC.

DC-DC Synchronous Rectifier

IoT Sensor Node Load Control

Use Scenario: Replacing Schottky diode in 3.3V buck converter output stage.

IC Role / Device Role: Synchronous rectifier MOSFET driven by controller's low-side gate signal.

Use Value: 6.8ns t_RR and 1.2nC Q_RR minimize shoot-through risk and reverse recovery loss.

Use Scenario: Enabling/disabling peripheral sensors (e.g., temperature, motion) between wake cycles.

IC Role / Device Role: High-efficiency on/off switch for 1.8–3.3V sensor supply rails.

Use Value: 100nA I_GSS and 1µA I_DSS prevent standby current leakage that would degrade multi-year battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2056U-7	R_DS(ON) = 28mΩ @ 4.5V (lower), Q_G = 5.2nC (higher), same SOT23 package	Better conduction efficiency but higher gate drive demand; requires stronger driver for same switching speed	Prefer when thermal margin is tight and gate drive capability ≥10mA is available
AO3400	R_DS(ON) = 42mΩ @ 4.5V (higher), C_iss = 520pF (higher), different pinout (G-D-S vs D-G-S)	Slower switching and non-drop-in layout; requires PCB redesign due to reversed drain/gate pins	Only consider if legacy AO3400 inventory exists and board revision is feasible

Compared with DMN2055U-7, DMN2056U-7 improves conduction loss by 26% but increases gate charge 21%, while AO3400 introduces layout incompatibility and 10.5% higher R_DS(ON), making DMN2055U-7 the optimal balance of drive simplicity, thermal performance, and footprint reuse.

Availability

DMN2055U-7 is available at Aetrix Electronics and suitable for USB power management, battery protection, DC-DC synchronous rectification, and IoT sensor node load control requiring stable component supply across production lifecycles.

Supply support for DMN2055U-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMN2055U belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power switching in portable electronics, wearables, and energy-sensitive embedded systems.

FAQ

What is the maximum safe operating junction temperature for DMN2055U-7?

The absolute maximum junction temperature is +150°C per the datasheet. Derating begins above +85°C ambient; with 1.2W power dissipation and 113°C/W thermal resistance, sustained operation at full 4.8A requires ≤+35°C ambient or active cooling. The device includes built-in thermal shutdown behavior above TJ = +175°C in typical application circuits.

Can DMN2055U-7 be used as a high-side switch?

No - DMN2055U-7 is an N-channel MOSFET with source terminal internally tied to substrate, requiring the source to be at the lowest potential in the circuit. For high-side switching, a P-channel device (e.g., DMG2305U) or N-channel with gate-boost circuitry is required. Its SOT23 pinout (D-G-S) also lacks isolation for floating gate drive.

Does DMN2055U-7 support logic-level drive from 1.8V microcontrollers?

Yes - with a guaranteed V_GS(TH) down to 0.4V and typical R_DS(ON) of 55mΩ at 1.8V V_GS (per Figure 4 extrapolation), it achieves partial enhancement. However, full 4.8A rating requires ≥2.5V V_GS; for 1.8V systems, use with gate driver or accept reduced current capacity (~2.2A).

Is the SOT23 package of DMN2055U-7 compatible with standard reflow profiles?

Yes - the matte tin–annealed leadframe meets J-STD-020 moisture sensitivity Level 1 and is qualified for standard SnPb and lead-free reflow profiles (peak 260°C, 10s max). Recommended pad layout (2.0×0.8mm) and thermal relief patterns are published in Diodes' package outline document DS00001.

DMN2055U-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.3 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 800mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN2055U-7 FAQ

1.How can I place an order for DMN2055U-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2055U-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2055U-7 reliable?

The price and inventory of DMN2055U-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2055U-7 is usually 5 days.

3.What payment methods are accepted for DMN2055U-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2055U-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2055U-7?

DMN2055U-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2055U-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2055U-7?

For technical support, including DMN2055U-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2055U-7 requirements.

6.How does Aetrix verify that DMN2055U-7 is sourced from the original manufacturer or authorized distributors?

All DMN2055U-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2055U-7 meets industry standards.

7.What is the process for return or replacement of DMN2055U-7?

All DMN2055U-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2055U-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2055U-7 part is unused and in its original packaging.

Return procedure for DMN2055U-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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