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Diodes Incorporated DMN2055UQ-7

Part No.:
DMN2055UQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMN2055UQ-7.pdf
Description:
MOSFET BVDSS: 8V~24V SOT23 T&R 3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,706

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Product details

Overview

DMN2055UQ from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage power switching, featuring 20V VDSS, 38mΩ RDS(ON) at VGS = 4.5V, 4.8A ID (TA = +25°C), and AEC-Q101 qualification for automotive use in load switching and power management circuits.

For engineers reviewing the DMN2055UQ datasheet, DMN2055UQ pinout, DMN2055UQ application, or DMN2055UQ equivalent, key selection criteria include its low-threshold gate drive (VGS(TH) = 0.4–1.0V), fast switching (tF = 4.4ns), and SOT23 package suitability for space-constrained DC-DC converter and battery protection designs.

Technical Context

This MOSFET employs a planar trench-gate process to achieve low RDS(ON) while maintaining low gate charge (QG = 4.3nC) and minimal output capacitance (Coss = 55pF). Its 0.4–1.0V gate threshold enables direct interfacing with 1.8V/2.5V/3.3V logic outputs without level shifting.

Thermal performance is defined by RθJA = 113°C/W on 1-inch2 copper and 162°C/W on standard FR-4, supporting continuous operation up to +150°C junction temperature. The integrated body diode exhibits VSD = 0.7–1.0V at 1A, suitable for synchronous rectification and reverse polarity protection.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - Maximum drain-source blocking voltage for 3.3V/5V rail applications
RDS(ON) 38mΩ @ VGS = 4.5V - Enables <150mW conduction loss at 4.5A in compact SOT23
ID (TA = +25°C) 4.8A - Continuous current rating with standard PCB layout, sufficient for USB PD load switches
QG 4.3nC - Low gate charge reduces driver power and enables >1MHz PWM operation
Ciss 400pF - Input capacitance compatible with low-power microcontroller GPIOs driving directly
tF 4.4ns - Fast fall time minimizes switching losses in high-frequency buck converters
VGS(TH) 0.4–1.0V - Guaranteed turn-on with 1.8V logic, eliminating need for gate boosters

Pinout & Package

Package: SOT23 - 3-pin surface-mount plastic package (2.9mm × 1.3mm × 1.0mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Current return path for N-channel channel Connected to ground or low-side reference; internal bond wire to die substrate
2 (Gate) Control terminal for channel conduction High-impedance input requiring <100nA leakage; sensitive to ESD per HBM 2kV
3 (Drain) Main current-carrying terminal Connected to load or supply rail; handles full switched current and voltage stress

Key Features

Feature Design Value
Low RDS(ON) at low VGS 45mΩ @ VGS = 2.5V - Enables efficient operation from single Li-ion or 3.3V rails
Fast switching with low QGD QGD = 4.8nC - Minimizes Miller plateau duration and improves hard-switching robustness
Automotive-grade reliability AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 facilities - Validated for under-hood and infotainment systems
Green packaging Halogen- and antimony-free, <900ppm Br+Cl, <1000ppm Sb - Compliant with EU ELV and JGPSSI directives

Applications

USB Power Delivery Switch Automotive Body Control Module

Use Scenario: Selective 5V/9V/15V/20V rail enablement in Type-C port controllers with overcurrent protection.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path between controller and connector.

Use Value: 38mΩ RDS(ON) limits voltage drop to <190mV at 5A, preserving PD negotiation margins and thermal headroom in 25mm² footprint.

Use Scenario: Driving LED dome lights, door locks, and window motors in 12V vehicle electrical architecture.

IC Role / Device Role / Timing Role: High-reliability discrete switch replacing mechanical relays for pulse-width modulated loads.

Use Value: AEC-Q101 qualification ensures 150°C operation and 1000-cycle thermal cycling endurance required for BCM mounting near HVAC ducts.

Portable Battery Protection Industrial Sensor Node Power Gating

Use Scenario: Reverse-polarity and overcurrent protection in rechargeable tool packs and medical handhelds.

IC Role / Device Role / Timing Role: Back-to-back configuration with second MOSFET to block reverse current and support bidirectional fault detection.

Use Value: 0.4V VGS(TH) allows integration with low-quiescent-current protection ICs (e.g., DW01A) using shared 2.5V reference.

Use Scenario: Power gating of BLE/Wi-Fi transceivers and analog front-ends in battery-powered IIoT edge nodes.

IC Role / Device Role / Timing Role: Controlled shutdown of non-critical subsystems during deep-sleep mode to extend battery life.

Use Value: 100nA IGSS leakage ensures <1µA total off-state current, enabling >10-year shelf life in sealed sensor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2053UQ-7 Same SOT23 package, but 25mΩ RDS(ON) @ 4.5V and 5.5A ID; higher QG (5.8nC) Better conduction efficiency at high duty cycles; less suitable for ultra-low-power wake-up events Select when minimizing I2R loss dominates over gate drive energy budget
AO3400 Non-AEC-Q101, 28mΩ RDS(ON) @ 4.5V, 5.7A ID, but no guaranteed VGS(TH) min and higher Ciss (640pF) Limited to commercial-grade consumer electronics; not validated for automotive thermal cycling Acceptable for cost-sensitive industrial controls where AEC-Q101 is not mandated

Compared with DMN2055UQ, DMN2053UQ offers lower conduction loss but increases gate drive burden, while AO3400 trades automotive reliability for marginal RDS(ON) improvement and lacks guaranteed low-threshold operation critical for 1.8V logic compatibility.

Availability

DMN2055UQ is available at Aetrix Electronics and suitable for USB PD power switches, automotive body control modules, and portable battery protection circuits requiring stable component supply across multi-year production programs.

Supply support for DMN2055UQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN2055UQ belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for low-voltage, high-reliability switching in ADAS, infotainment, and powertrain subsystems where AEC-Q101 compliance and thermal robustness are mandatory.

FAQ

Is DMN2055UQ suitable for 1.8V GPIO direct drive?

Yes. With a guaranteed VGS(TH) maximum of 1.0V and typical turn-on starting at 0.4V, the DMN2055UQ fully enhances at 1.8V gate drive, delivering ≤38mΩ RDS(ON) without external level-shifting circuitry. This is confirmed in Figure 4 of the datasheet showing RDS(ON) < 45mΩ at VGS = 2.5V and ID = 3.1A.

What is the maximum safe operating area (SOA) for pulsed operation?

The SOA curve in Figure 12 specifies single-pulse operation up to 25A at VDS = 10V for 100µs, limited by thermal constraints. At VDS = 20V, the maximum pulse current drops to ~6A for the same duration. Derating is required above TA = +25°C per the transient thermal resistance curve in Figure 13.

Does DMN2055UQ have integrated ESD protection?

No. The device has no built-in ESD protection diodes. It is rated for HBM ESD withstand of 2kV (per Diodes' internal qualification), but external TVS or RC filtering is recommended on gate and drain lines in environments with >500V system-level ESD exposure, especially in automotive harness-connected applications.

Can DMN2055UQ replace Si2302DS in existing designs?

Yes, with validation. Both are SOT23 N-channel MOSFETs with similar RDS(ON) (Si2302DS: 45mΩ @ 2.5V), but DMN2055UQ offers tighter VGS(TH) range (0.4–1.0V vs. 0.6–1.2V), lower QG (4.3nC vs. 5.2nC), and AEC-Q101 qualification. Layout and thermal validation are required due to differing SOA and package thermal resistance profiles.

DMN2055UQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.3 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
800mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMN2055UQ-7 FAQ

1.How can I place an order for DMN2055UQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2055UQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2055UQ-7 reliable?

The price and inventory of DMN2055UQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2055UQ-7 is usually 5 days.

3.What payment methods are accepted for DMN2055UQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2055UQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2055UQ-7?

DMN2055UQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2055UQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2055UQ-7?

For technical support, including DMN2055UQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2055UQ-7 requirements.

6.How does Aetrix verify that DMN2055UQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN2055UQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2055UQ-7 meets industry standards.

7.What is the process for return or replacement of DMN2055UQ-7?

All DMN2055UQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2055UQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2055UQ-7 part is unused and in its original packaging.

Return procedure for DMN2055UQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2055UQ-7 Tags

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