My Inquiry
My Account
Diodes Incorporated DMN2055UW-13
- Part No.:
- DMN2055UW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN2055UW-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT323 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:4,674
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN2055UW-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT323 package, rated for 20V VDSS, 46mΩ RDS(ON) at 4.5V VGS, and 3.1A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and low-voltage power switching in space-constrained portable electronics.
For engineers reviewing the DMN2055UW-13 datasheet, DMN2055UW-13 pinout, DMN2055UW-13 application, or DMN2055UW-13 equivalent, key selection criteria include its low gate threshold (0.4–1.0V), fast switching (tF = 4.4ns), low input capacitance (Ciss = 400pF), and thermal resistance of 191°C/W on 2oz copper PCB - critical for thermally sensitive battery-powered designs.
Technical Context
This MOSFET operates as a low-side switching device with enhancement-mode logic-level gate drive compatibility down to 2.5V. Its 0.4–1.0V VGS(TH) enables direct interfacing with 3.3V and 2.5V microcontrollers without level-shifting circuitry.
The device integrates a body diode with 0.7–1.0V forward voltage at 1A and exhibits normalized RDS(ON) variation ≤1.6× across –55°C to +150°C junction temperature, supporting stable operation in automotive cabin and industrial ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports 12V rail and 5V logic-supplied systems with margin against transients |
| RDS(ON) | 46mΩ @ 4.5V VGS - limits conduction loss to <150mW at 3.1A, enabling compact thermal design |
| ID (continuous) | 3.1A @ +25°C - sufficient for load switches and buck converter synchronous rectification up to ~5W |
| Ciss | 400pF - reduces gate drive power and enables >1MHz switching with low-power drivers |
| tF | 4.4ns - minimizes switching transition losses in high-frequency DC-DC topologies |
| RθJA | 191°C/W (2oz copper) - allows ~2.7°C rise at 0.52W dissipation, suitable for unheatsinked PCB layouts |
| VGS(TH) | 0.4–1.0V - ensures reliable turn-on with 1.8V/2.5V/3.3V I/O domains without external bias |
Pinout & Package
Package: SOT323 - ultra-small surface-mount plastic package (2.15 × 2.10 × 0.95 mm), moisture sensitivity level 1, RoHS-compliant matte tin-plated leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Internally connected to exposed die paddle in SOT323; primary thermal path to PCB ground plane |
| 2 (Gate) | Control electrode for channel formation | High-impedance input requiring <100nA leakage; sensitive to ESD but compatible with standard CMOS drivers |
| 3 (Drain) | Power output terminal | Connected to load or switching node; carries full switched current and must be routed with low-inductance layout |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 2.5V - eliminates need for gate driver ICs in 3.3V systems |
| Low Qg | 4.3nC total gate charge - reduces driver power consumption and improves efficiency above 500kHz |
| Green construction | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) - meets IPC-1752A Tier 1 reporting |
| Fast body diode | VSD = 0.7V @ 1A - enables efficient synchronous rectification and freewheeling in buck converters |
Applications
| Portable Power Management | Battery Protection Circuits |
|---|---|
Use Scenario: Load switching in USB-C PD power banks and wireless charging receivers where board area is constrained and thermal headroom is limited. IC Role / Device Role: Low-side power switch controlling 5–12V output rails with minimal voltage drop and self-heating. Use Value: 46mΩ RDS(ON) at 4.5V ensures <0.45V dropout at 10A peak, preserving system efficiency while fitting within 2.2mm² footprint. | Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs using discrete MOSFET-based protection ICs. IC Role / Device Role: Primary discharge FET with integrated body diode used for reverse-current blocking and safe shutdown. Use Value: 0.7V VSD and 22A pulsed rating support fast fault response and bidirectional current handling without external diode. |
| DC-DC Synchronous Rectifier | IoT Sensor Node Power Switching |
Use Scenario: Secondary-side switch in 3.3V/5V buck converters powering MCU subsystems in industrial gateways. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction losses and improve light-load efficiency. Use Value: 35mΩ typical RDS(ON) at 4.5V cuts rectifier loss by >60% vs. 0.3V Schottky, extending runtime in energy-harvesting applications. | Use Scenario: Power gating of BLE radios, environmental sensors, and flash memory in coin-cell–powered wearables. IC Role / Device Role: Ultra-low-quiescent current load switch enabling sub-μA standby states via gate-controlled isolation. Use Value: 100nA IGSS and 1μA IDSS prevent leakage-induced battery drain, sustaining >1-year shelf life in sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UW-7 | Same SOT323 package; 30mΩ RDS(ON) @ 4.5V but higher 5.5A ID rating and 25V VDSS | Higher current capability suits 5–6A loads; slightly larger die increases Ciss to 470pF | Select when higher continuous current or tighter RDS(ON) tolerance is required, accepting marginally slower switching |
| AO3400 | SOT23-3 package; 44mΩ RDS(ON) @ 4.5V, 5.7A ID, but 30V VDSS and 500pC Qg | Larger footprint (2.9 × 1.3mm vs. 2.2 × 2.1mm); higher gate charge demands stronger drivers | Choose for legacy SOT23-3 board compatibility or where higher voltage margin justifies larger size and drive overhead |
Compared with DMN2055UW-13, DMN2053UW-7 offers lower on-resistance for higher-current DC-DC stages, while AO3400 provides wider voltage headroom and higher current but requires more board area and gate drive strength - making DMN2055UW-13 optimal for ultra-compact, low-power, logic-level–driven switching where thermal and layout constraints dominate.
Availability
DMN2055UW-13 is available at Aetrix Electronics and suitable for portable power management, battery protection circuits, DC-DC synchronous rectification, and IoT sensor node power switching requiring stable component supply and consistent parametric performance across production batches.
Supply support for DMN2055UW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and product qualification aligned to AEC-Q101 for automotive MOSFETs.
The DMN2055UW belongs to Diodes' logic-level N-channel MOSFET product line, engineered for high-efficiency, low-voltage power switching in space- and thermally constrained applications such as portable electronics and battery-powered systems.
FAQ
What is the maximum continuous drain current for DMN2055UW-13 at +70°C ambient?
The DMN2055UW-13 supports 2.4A continuous drain current at TA = +70°C with recommended FR-4 PCB layout (2oz copper, thermal pad). This derating reflects its 191°C/W thermal resistance and 150°C maximum junction temperature - ensuring reliable operation in enclosed handheld enclosures without forced airflow.
Does DMN2055UW-13 have avalanche rating or SOA curves for inductive switching?
No avalanche rating is specified in the datasheet. However, Figure 12 provides Safe Operating Area (SOA) curves for single-pulse conditions up to 10s, confirming 22A pulsed current capability at VDS = 10V with 10μs pulse width and 1% duty cycle - suitable for non-repetitive inductive turn-off events when paired with appropriate snubbing.
Can DMN2055UW-13 be used in automotive applications?
While DMN2055UW-13 is not AEC-Q101 qualified, Diodes Incorporated offers automotive-grade variants (e.g., DMN2055UWQ-13) with PPAP documentation and IATF 16949 manufacturing. For non-safety-critical cabin modules operating within –40°C to +105°C ambient, engineering validation per AEC-Q100 stress tests is required before deployment.
What is the gate-to-source leakage current specification at maximum rated voltage?
IGSS is specified as ±100nA maximum at VGS = ±8V and TA = +25°C. This ultra-low leakage ensures minimal gate bias current draw in high-impedance control circuits - critical for battery-operated systems where gate resistor networks or microcontroller GPIOs must maintain stable VGS without loading.
DMN2055UW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 46mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN2055UW-13 FAQ
1.How can I place an order for DMN2055UW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2055UW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2055UW-13 reliable?
The price and inventory of DMN2055UW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2055UW-13 is usually 5 days.
3.What payment methods are accepted for DMN2055UW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2055UW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2055UW-13?
DMN2055UW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2055UW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2055UW-13?
For technical support, including DMN2055UW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2055UW-13 requirements.
6.How does Aetrix verify that DMN2055UW-13 is sourced from the original manufacturer or authorized distributors?
All DMN2055UW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2055UW-13 meets industry standards.
7.What is the process for return or replacement of DMN2055UW-13?
All DMN2055UW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2055UW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2055UW-13 part is unused and in its original packaging.
Return procedure for DMN2055UW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN2055UW-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
