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Diodes Incorporated DMN2055UW-7

Part No.:
DMN2055UW-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SC-70, SOT-323
Datasheet:
AetrixDMN2055UW-7.pdf
Description:
MOSFET BVDSS: 8V~24V SOT323 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:600

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Product details

Overview

DMN2055UW-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT323 package, rated for 20V VDSS, 46mΩ RDS(ON) @ 4.5V VGS, and 3.1A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and low-voltage power switching in space-constrained portable electronics.

For engineers reviewing the DMN2055UW-7 datasheet, DMN2055UW-7 pinout, DMN2055UW-7 application, or DMN2055UW-7 equivalent, key selection criteria include low gate charge (4.3nC), fast switching (tF = 4.4ns), thermal resistance (RθJA = 191°C/W on 2oz copper), and AEC-Q101 readiness for automotive-grade power management.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining tight VGS(TH) distribution (0.4–1.0V) and robust body diode performance (VSD = 0.7V @ 1A). Its 400pF Ciss and 37pF Crss support efficient gate drive in synchronous buck topologies.

The device operates across –55°C to +150°C junction temperature range with normalized RDS(ON) variation <1.6× over full range at VGS = 4.5V. Thermal design is enabled by validated FR-4 PCB layout data and transient thermal resistance curves for pulse-width-dependent power handling.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - supports 12V rail switching and USB PD auxiliary power paths without derating
RDS(ON) 46mΩ @ 4.5V VGS - enables ≤145mW conduction loss at 3.1A in compact layouts
Qg 4.3nC - reduces gate driver power and allows use of low-current logic-level drivers
Ciss 400pF - minimizes Miller effect during hard-switching transitions in 500kHz–2MHz converters
PD 0.65W @ 2oz copper - defines maximum continuous dissipation on standard PCBs with thermal bias
tF 4.4ns - limits switching losses and EMI generation in high-frequency SMPS designs
VGS(TH) 0.4–1.0V - ensures reliable turn-on with 1.8V/3.3V microcontroller GPIOs

Pinout & Package

SOT323 surface-mount package: 1.8–2.2mm × 2.0–2.2mm footprint, 0.3mm nominal thickness, 0.027g mass, UL 94V-0 molded plastic housing with matte tin–annealed copper leadframe.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Current return path for channel conduction Connected to ground or low-side reference; forms cathode of integrated body diode
2 (Gate) Control terminal for channel modulation High-impedance input requiring <4.3nC charge; sensitive to ESD (±8V rating)
3 (Drain) Main current output terminal Carries switched load current; electrically tied to package tab (no thermal pad)

Key Features

Feature Design Value
Low RDS(ON) at logic-level drive 35mΩ typical @ 4.5V VGS enables >92% efficiency in 3.3V-input buck converters
Fast switching with low Qgd/Qgs ratio Qgd = 4.8nC, Qgs = 0.3nC - suppresses shoot-through risk in synchronous rectification
Thermally robust SOT323 layout RθJA = 191°C/W on 2oz copper - permits 0.65W operation without heatsink in handheld devices
Green, halogen-free construction <900ppm Br+Cl, <1000ppm Sb - meets IPC-1752A Class 3 material declarations for automotive Tier 1 BOMs

Applications

USB-C Power Delivery Switch Smartphone PMIC Load Switch

Use Scenario: Enables/disables 5–20V power paths between USB-C port and system rails under MCU control.

IC Role / Device Role / Timing Role: Low-side load switch with fast turn-off (<20ns) to prevent backfeed during hot-plug events.

Use Value: 46mΩ RDS(ON) limits voltage drop to <145mV at 3.1A, preserving bus voltage regulation margins.

Use Scenario: Isolates camera sensor or display module from main SoC supply during sleep states.

IC Role / Device Role / Timing Role: Controlled power gate with sub-1V VGS(TH) ensuring compatibility with 1.8V I/O domains.

Use Value: 0.65W power rating supports burst-mode operation up to 3.1A without thermal throttling.

Automotive Body Control Module Wireless Earbud Charging Case

Use Scenario: Drives LED indicators and small solenoids in 12V vehicle subsystems with CAN/LIN interface coordination.

IC Role / Device Role / Timing Role: General-purpose N-channel switch qualified per AEC-Q101 stress tests.

Use Value: –55°C to +150°C operating range and 22A pulsed rating handle cold-crank and load-dump transients.

Use Scenario: Controls charging current flow from Li-ion battery to TWS earbud PCB during case-to-earbud handoff.

IC Role / Device Role / Timing Role: Compact, low-RDS(ON) switch minimizing heat buildup in thermally isolated plastic enclosures.

Use Value: SOT323 footprint (2.15mm × 2.10mm) fits within 3mm × 3mm board area constraints of ultra-portable designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2053UW-7 Lower RDS(ON) (32mΩ @ 4.5V) but higher Qg (6.2nC); same SOT323 package Better conduction loss, worse switching loss above 1MHz Select when efficiency >1MHz is secondary to static loss reduction in 500kHz–1MHz converters
AO3400 Higher RDS(ON) (44mΩ @ 4.5V), larger Qg (11nC), different pinout (G-S-D vs S-G-D) Requires PCB redesign; less suitable for space-constrained layouts Choose only if legacy AO3400 inventory exists and thermal margin exceeds 0.3W

Compared with DMN2055UW-7, DMN2053UW-7 trades higher gate drive demand for lower conduction loss, while AO3400 demands layout revision and delivers inferior dynamic performance - making DMN2055UW-7 optimal for balanced efficiency, size, and drive simplicity in new designs.

Availability

DMN2055UW-7 is available at Aetrix Electronics and suitable for USB-C power delivery switches, smartphone PMIC load switches, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for DMN2055UW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and product qualification to AEC-Q101 standards.

The DMN2055UW belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for high-density, low-voltage power management in portable and automotive electronics where thermal and footprint constraints dominate.

FAQ

What is the maximum continuous drain current for DMN2055UW-7 at +70°C ambient?

The DMN2055UW-7 supports 2.4A continuous drain current at TA = +70°C with recommended FR-4 PCB layout (2oz copper, thermal bias). This derating reflects its 191°C/W RθJA and 150°C maximum junction temperature, ensuring safe operation under sustained load in enclosed environments.

Does DMN2055UW-7 have a specified avalanche rating?

No avalanche energy rating (EAS) is specified in the DS41990 datasheet. The device is characterized for repetitive unclamped inductive switching only under defined test conditions (VDD = 10V, L = 0.1mH, IAS = 2.4A), and Diodes Incorporated does not guarantee avalanche capability beyond those parameters.

Can DMN2055UW-7 be used in place of a P-channel MOSFET for high-side switching?

No - DMN2055UW-7 is an N-channel device requiring gate voltage above source potential for conduction. It cannot function as a high-side switch without a charge pump or bootstrap circuit. Its pinout (S-G-D) and logic-level threshold are optimized for low-side configurations only.

Is the SOT323 package of DMN2055UW-7 compatible with reflow soldering per J-STD-020?

Yes - the DMN2055UW-7's SOT323 package has Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and subjected to standard Pb-free reflow profiles (peak 260°C) without baking or special handling.

DMN2055UW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
46mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.3 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
520mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

DMN2055UW-7 FAQ

1.How can I place an order for DMN2055UW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2055UW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2055UW-7 reliable?

The price and inventory of DMN2055UW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2055UW-7 is usually 5 days.

3.What payment methods are accepted for DMN2055UW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2055UW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2055UW-7?

DMN2055UW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2055UW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2055UW-7?

For technical support, including DMN2055UW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2055UW-7 requirements.

6.How does Aetrix verify that DMN2055UW-7 is sourced from the original manufacturer or authorized distributors?

All DMN2055UW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2055UW-7 meets industry standards.

7.What is the process for return or replacement of DMN2055UW-7?

All DMN2055UW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2055UW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2055UW-7 part is unused and in its original packaging.

Return procedure for DMN2055UW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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