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Diodes Incorporated DMN2055UWQ-13
- Part No.:
- DMN2055UWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN2055UWQ-13.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT323 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:9,600
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Product details
Overview
DMN2055UWQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in SOT323 package, rated for 20V VDSS, 46mΩ RDS(ON) @ 4.5V VGS, and 3.1A continuous drain current at +25°C - optimized for automotive power management and DC-DC converter high-side switching.
For engineers reviewing the DMN2055UWQ datasheet, DMN2055UWQ pinout, DMN2055UWQ application, or DMN2055UWQ equivalent, key selection criteria include its low 35mΩ typical RDS(ON) at 4.5V, 400pF Ciss, 4.3nC total gate charge, AEC-Q101 qualification, and SOT323 thermal performance (RθJA = 191°C/W with 2oz copper).
Technical Context
This MOSFET employs a planar trench-gated silicon process to achieve low on-resistance while maintaining fast switching (tr = 2.7ns, tf = 4.4ns) and low input capacitance. Its gate threshold voltage range (0.4–1.0V) enables compatibility with 2.5V and 3.3V logic-level drive.
The device integrates a body diode with 0.7V typical forward voltage at 1A and supports pulsed drain currents up to 22A. Thermal design is constrained by its 0.65W power dissipation limit on FR-4 with 2oz copper and 1in² thermal pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - maximum blocking voltage for 12V automotive rail and 5V/3.3V system-level switching |
| RDS(ON) | 46mΩ @ 4.5V VGS - enables ≤145mW conduction loss at 3.1A, critical for thermally constrained SOT323 layouts |
| ID (continuous) | 3.1A @ +25°C - derates to 2.4A at +70°C, defining usable current in ambient-limited automotive modules |
| Ciss | 400pF @ 10V VDS - determines gate drive strength requirement and switching transition speed |
| Qg | 4.3nC @ 4.5V VGS - sets minimum gate driver current (e.g., ≥43mA for 100ns turn-on) and drive loss |
| TJ range | −55°C to +150°C - supports under-hood automotive operation and industrial temperature cycling |
Pinout & Package
Package: SOT323 - surface-mount plastic case, 0.027g mass, UL 94V-0 rated, moisture sensitivity level 1, matte tin–annealed terminals solderable per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | High-current output path | Connected to load or switching node; carries full ID and must be routed with low-inductance copper |
| Source (S) | Reference return path | Common node for gate drive reference and current sensing; ties to ground or low-side switch source |
| Gate (G) | Control terminal | High-impedance input requiring <4.3nC charge; sensitive to ESD and ringing; requires RC snubber if driven by high-Z sources |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 53mΩ - enables direct interface with 2.5V microcontroller GPIO without level-shifting |
| Fast switching with low Qgd | 4.8nC - reduces Miller plateau time and improves hard-switching efficiency in DC-DC topologies |
| AEC-Q101 qualification | Qualified for automotive applications with PPAP capability and IATF 16949 manufacturing - required for engine control, ADAS, and body electronics |
| Green packaging | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb), RoHS 3 compliant - meets EU automotive environmental mandates |
Applications
| Automotive Body Control Module | USB Power Delivery Switch |
|---|---|
Use Scenario: Controlling 12V lighting loads (LED headlamps, interior lamps) in BCMs with PWM dimming and short-circuit protection. IC Role / Device Role / Timing Role: High-side load switch managing up to 3.1A peak current with fast turn-off (<20ns delay) to meet ISO 7637-2 transient response requirements. Use Value: 46mΩ RDS(ON) limits self-heating to <150mW at 2.5A, enabling compact SOT323 placement near microcontroller without thermal derating. |
Use Scenario: Enabling/disabling VBUS path in USB Type-C PD sink applications with overcurrent and reverse-voltage protection. IC Role / Device Role / Timing Role: Low-voltage N-channel switch controlled by 3.3V PMIC, operating in linear mode during soft-start and saturated mode during steady-state. Use Value: 0.4–1.0V VGS(TH) ensures reliable turn-on with 3.3V logic, while 400pF Ciss minimizes gate drive power in frequent enable/disable cycles. |
| Industrial Sensor Node Power Gate | Portable Medical Device Load Switch |
Use Scenario: Isolating power to MEMS sensors and ADCs in battery-powered IIoT nodes to extend sleep-mode battery life. IC Role / Device Role / Timing Role: Ultra-low-leakage (≤1µA IDSS) power gate activated by MCU GPIO to reduce system quiescent current below 10µA. Use Value: 1.0µA max IDSS at 20V ensures <20nW standby loss, preserving multi-year battery life in remote monitoring deployments. |
Use Scenario: Managing power sequencing for Bluetooth LE radios and display drivers in handheld diagnostic tools. IC Role / Device Role / Timing Role: Logic-level N-MOSFET used as reverse-polarity protection and hot-swap controller with integrated body diode conduction path. Use Value: 0.7V typical VSD at 1A enables low-loss reverse-path operation during plug-in events, reducing thermal stress on external protection ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UWQ-7 | Same SOT323 package, but 30mΩ RDS(ON) @ 4.5V and 3.8A ID; higher gate charge (5.2nC) | Better conduction efficiency in high-duty-cycle DC-DC converters; less suitable for fast-pulsed loads due to slower switching | Select when lower RDS(ON) dominates over switching loss - e.g., always-on power rails in infotainment systems |
| AO3400 | Same 30V rating, 44mΩ RDS(ON) @ 4.5V, but not AEC-Q101 qualified; 5.5nC Qg; SOT23 package | Lacks automotive qualification and has larger footprint; higher thermal resistance (RθJA = 220°C/W) | Acceptable for cost-sensitive consumer or industrial prototypes where AEC-Q101 is not mandated |
Compared with DMN2055UWQ, DMN2053UWQ delivers lower conduction loss but increases gate drive demand, while AO3400 offers similar RDS(ON) without automotive compliance - making DMN2055UWQ the optimal balance of qualification, thermal density, and drive simplicity for production automotive modules.
Availability
DMN2055UWQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery designs, and portable medical instrumentation requiring stable component supply across extended product lifecycles.
Supply support for DMN2055UWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' Automotive-Qualified PowerMOS family, engineered specifically for high-reliability 12V automotive subsystems including lighting, power distribution, and sensor interface circuits.
FAQ
Is DMN2055UWQ suitable for hot-swap applications?
Yes - its 20V VDSS, low 46mΩ RDS(ON), and 22A pulsed drain rating support controlled inrush limiting in 5V/12V hot-swap circuits. The body diode's 0.7V VSD enables reverse-current path during plug-in transients, and AEC-Q101 qualification ensures robustness against repeated insertion cycles in automotive docking stations.
What PCB layout practices minimize thermal rise in SOT323?
Use minimum 1-inch-square 2oz copper thermal pad connected to the source pin via multiple vias (≥4× 0.3mm diameter). Maintain ≥0.5mm clearance between drain/source traces and adjacent signals. Avoid placing the device near heat sources; thermal simulation shows junction-to-ambient resistance drops from 241°C/W to 191°C/W with this layout, enabling full 3.1A rating at +70°C ambient.
Does DMN2055UWQ require a gate resistor for stability?
A 10Ω–47Ω series gate resistor is recommended to dampen ringing caused by 3.7Ω intrinsic gate resistance and PCB trace inductance. Without it, fast edges (2.7ns rise time) can excite parasitic LC oscillations >200MHz, risking EMI and false turn-on. The resistor value balances damping effectiveness against added 4.3nC gate charge delay (~50ps per ohm).
Can DMN2055UWQ replace a P-channel MOSFET in high-side switching?
No - as an N-channel device, it requires gate voltage above source potential for conduction. In high-side configuration, it needs a charge pump or bootstrap circuit to generate ≥2.5V above the rail. A P-channel part like DMG1012T avoids this complexity but trades higher RDS(ON) (190mΩ); DMN2055UWQ is preferred only when lower on-resistance justifies added gate drive design effort.
DMN2055UWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 46mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN2055UWQ-13 FAQ
1.How can I place an order for DMN2055UWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2055UWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2055UWQ-13 reliable?
The price and inventory of DMN2055UWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2055UWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN2055UWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2055UWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2055UWQ-13?
DMN2055UWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2055UWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2055UWQ-13?
For technical support, including DMN2055UWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2055UWQ-13 requirements.
6.How does Aetrix verify that DMN2055UWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN2055UWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2055UWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN2055UWQ-13?
All DMN2055UWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2055UWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2055UWQ-13 part is unused and in its original packaging.
Return procedure for DMN2055UWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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