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Diodes Incorporated DMN2055UWQ-7
- Part No.:
- DMN2055UWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN2055UWQ-7.pdf
- Description:
- MOSFET BVDSS: 8V~24V SOT323 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:3,960
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Product details
Overview
DMN2055UWQ from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in SOT323 package, rated for 20V VDSS, 46mΩ RDS(ON) @ 4.5V VGS, and 3.1A continuous drain current at +25°C - optimized for high-efficiency DC-DC converters and automotive power management switches.
For engineers reviewing the DMN2055UWQ datasheet, DMN2055UWQ pinout, DMN2055UWQ application, or DMN2055UWQ equivalent, key selection criteria include low gate charge (4.3nC), fast switching (tF = 4.4ns), AEC-Q101 qualification, and thermal resistance of 191°C/W on 2oz FR-4 with thermal bias - critical for space-constrained automotive and portable power designs.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining robust body diode performance (VSD = 0.7V @ 1A) and low input capacitance (Ciss = 400pF). Its 0.4–1.0V gate threshold enables reliable turn-on with 2.5V logic-level drive.
The device operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 22A. Its SOT323 package delivers 0.027g mass and UL 94V-0 flammability rating, meeting stringent automotive PCB layout and reliability requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - supports 12V automotive rail and 5V/3.3V system inputs without derating |
| RDS(ON) | 46mΩ @ 4.5V VGS - limits conduction loss to ≤0.44W at 3.1A, enabling compact thermal design |
| Qg | 4.3nC - reduces gate drive power and enables >1MHz switching in synchronous buck stages |
| tF | 4.4ns - minimizes switching transition time, lowering dynamic losses in high-frequency converters |
| RθJA | 191°C/W (2oz copper + thermal bias) - allows 0.65W dissipation at ≤100°C ambient rise |
| ID (continuous) | 3.1A @ +25°C - sustains full load in USB-C PD adapters and LED driver high-side switches |
| VGS(TH) | 0.4–1.0V - ensures robust turn-on with 1.8V/2.5V/3.3V microcontroller GPIOs |
Pinout & Package
SOT323 surface-mount package: 1.8–2.2mm × 2.0–2.2mm footprint, 0.9–1.0mm height, matte tin-plated copper leadframe, moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–8V VGS; low Ciss (400pF) eases drive from low-power MCUs |
| 2 (S) | Source | Reference node for gate drive; connected to ground or low-side return path in switch configurations |
| 3 (D) | Drain | Power output terminal; handles 20V blocking and 3.1A conduction; integrated body diode enables freewheeling |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power modules, including engine control units and ADAS domain controllers |
| Low RDS(ON) at 2.5V VGS | 53mΩ enables use with 2.5V logic drivers - eliminates level-shifting in battery-powered systems |
| Green compound & RoHS 3 compliant | Halogen-free (<900ppm Br/Cl), antimony-free (<1000ppm), fully lead-free - meets IATF 16949 manufacturing standards |
| Fast tD(OFF) | 15.4ns delay supports precise PWM timing in digital power controllers and motor gate drivers |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Low-side load switching for interior lighting and window lift motors in 12V vehicle architectures. IC Role / Device Role / Timing Role: N-channel MOSFET used as grounded-source power switch controlled by MCU GPIO. Use Value: 46mΩ RDS(ON) limits voltage drop to <150mV at 3A, reducing heat sink need and PCB area vs. higher-RDS(ON) alternatives. |
Use Scenario: Input power path control in portable chargers supporting 20V/5A USB-C PD profiles. IC Role / Device Role / Timing Role: High-side protection switch placed between input connector and buck converter stage. Use Value: 20V VDSS and 3.1A rating support full PD3.0 specification; fast tF (4.4ns) prevents shoot-through during hot-swap events. |
| Industrial Sensor Node Power Gating | Medical Wearable Battery Management |
Use Scenario: Duty-cycled power enable for ultra-low-power environmental sensors in IIoT edge nodes. IC Role / Device Role / Timing Role: Logic-level N-MOSFET acting as sleep-mode power gate driven by ARM Cortex-M0+ wake signal. Use Value: 0.4V VGS(TH) min ensures reliable turn-on with 1.8V I/O; 100nA IGSS prevents leakage-induced wake-up false triggers. |
Use Scenario: Load switching between Li-ion battery and precision analog front-end in ECG patch monitors. IC Role / Device Role / Timing Role: Low-noise, low-RDS(ON) switch isolating battery during charging or standby. Use Value: 35mΩ typical RDS(ON) keeps voltage sag <100mV at 2.5A peak, preserving ADC reference stability and signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UWQ-7 | Lower RDS(ON) (38mΩ @ 4.5V), same SOT323 package, identical AEC-Q101 qualification | Better efficiency in thermally constrained 3.1A loads; marginally higher Qg (4.8nC) | Select when conduction loss dominates over switching loss and board space prohibits larger packages |
| AO3400 | Higher RDS(ON) (44mΩ @ 4.5V), non-AEC-Q101, RoHS-compliant but not halogen-free | Cost-sensitive consumer electronics only; unsuitable for automotive PPAP or green compliance programs | Choose only for non-automotive prototypes where AEC-Q101 and halogen-free status are not required |
Compared with DMN2055UWQ, DMN2053UWQ offers lower conduction loss at identical footprint and qualification, while AO3400 trades automotive reliability and green compliance for lower unit cost in commercial-grade applications.
Availability
DMN2055UWQ is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, and industrial sensor node power gating requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.
Supply support for DMN2055UWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned with AEC-Q200 and AEC-Q101 standards.
The DMN2055UWQ belongs to Diodes' automotive-qualified logic-level MOSFET product line, engineered for high-reliability power switching in 12V/24V vehicle subsystems and portable power interfaces where low RDS(ON), fast switching, and green compliance are mandatory.
FAQ
Is DMN2055UWQ suitable for high-frequency switching above 1MHz?
Yes - its 4.3nC total gate charge and 4.4ns fall time enable efficient operation in synchronous buck converters up to 2MHz. Layout must minimize gate loop inductance; recommended gate resistor is 6Ω for optimal ringing suppression without compromising speed.
What is the maximum allowable PCB pad size for thermal performance in SOT323?
For rated 0.65W power dissipation, Diodes recommends a minimum 1-inch square 2oz copper thermal pad connected to the source pin via multiple vias. Smaller pads reduce RθJA margin - with standard FR-4 layout, RθJA rises to 241°C/W, limiting safe continuous current to ~2.4A at +70°C ambient.
Does DMN2055UWQ support bidirectional current flow in battery protection circuits?
No - it is a unidirectional N-channel MOSFET. The intrinsic body diode conducts only from source to drain. For reverse-current blocking, external series diode or complementary P-channel configuration is required; the device itself does not support true bidirectional conduction.
How does gate threshold variation affect operation across temperature?
VGS(TH) decreases from 1.0V at –55°C to 0.4V at +150°C (Figure 8). This improves turn-on margin at high temperature but risks unintended turn-on if gate is left floating near 0.5V; always use active pull-down or gate driver with defined low-state voltage.
DMN2055UWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 46mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN2055UWQ-7 FAQ
1.How can I place an order for DMN2055UWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2055UWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2055UWQ-7 reliable?
The price and inventory of DMN2055UWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2055UWQ-7 is usually 5 days.
3.What payment methods are accepted for DMN2055UWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2055UWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2055UWQ-7?
DMN2055UWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2055UWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2055UWQ-7?
For technical support, including DMN2055UWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2055UWQ-7 requirements.
6.How does Aetrix verify that DMN2055UWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN2055UWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2055UWQ-7 meets industry standards.
7.What is the process for return or replacement of DMN2055UWQ-7?
All DMN2055UWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2055UWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2055UWQ-7 part is unused and in its original packaging.
Return procedure for DMN2055UWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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