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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2056U-13

Name: DMN2056U-13
Brand: Diodes Incorporated
SKU: DMN2056U-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2056U-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN2056U-13.pdf

Description:: MOSFET N-CHANNEL 20V 4A SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN2056U-13 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in SOT23 package, featuring 38 mΩ R_DS(on) at V_GS = 4.5V, 4.0 A continuous drain current at T_A = +25°C, and low 0.6–1.0 V gate threshold voltage. It serves as a high-efficiency power switch in portable DC-DC converters and battery charging circuits.

For engineers reviewing the DMN2056U-13 datasheet, DMN2056U-13 pinout, DMN2056U-13 application, or DMN2056U-13 equivalent, key selection criteria include its low-voltage gate drive compatibility (V_GS(th) down to 0.4 V), fast switching (t_D(off) = 8.5 ns), and thermal performance on FR-4 PCBs (R_θJA = 136 °C/W with thermal bias).

Technical Context

This MOSFET employs planar silicon technology optimized for low R_DS(on) while maintaining robust switching characteristics. Its gate threshold voltage range (0.4–1.0 V) enables direct interface with 1.8 V and 2.5 V logic controllers, and its low C_iss (339 pF) and C_rss (34 pF) reduce drive power and improve EMI behavior in high-frequency buck regulators.

The device integrates a body diode with 0.7–1.2 V forward voltage at 1 A and 4.7 ns reverse recovery time, supporting synchronous rectification and freewheeling in compact power stages. Its SOA is rated for 22 A pulsed drain current (10 µs, 1% duty) and supports operation from –55°C to +150°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage for low-voltage power rails (e.g., USB PD, Li-ion battery systems)
R_DS(on)	38 mΩ @ V_GS = 4.5V - Enables <150 mW conduction loss at 2 A in portable power stages
I_D (max)	4.0 A @ T_A = +25°C - Supports continuous load currents in space-constrained DC-DC modules
V_GS(th)	0.6 V (typ) - Allows reliable turn-on with 1.8 V microcontroller GPIO without level-shifting
C_iss	339 pF - Limits gate drive current demand in 1–2 MHz switching applications
t_D(off)	8.5 ns - Reduces switching transition time, lowering overlap losses in synchronous buck topologies
R_θJA	136 °C/W (with thermal bias) - Enables 0.94 W power dissipation on standard 2 oz copper FR-4 with bottom-layer heatsink

Pinout & Package

SOT23 (Standard) package: 3-pin surface-mount plastic case, 0.009 g weight, UL 94V-0 rated molding compound, matte tin–annealed copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output terminal	Connected to switched power rail; carries full load current and must be routed with low-inductance layout
G (Gate)	Control input for channel conduction	High-impedance node requiring clean, low-ESR gate drive; sensitive to ringing due to low C_iss/C_rss ratio
S (Source)	Reference node for gate control and current return	Typically tied to power ground; forms common reference for V_GS measurement and body diode cathode

Key Features

Feature	Design Value
Low R_DS(on) at low V_GS	45 mΩ @ V_GS = 2.5V - Enables efficient operation directly from 2.5 V system rails without gate boosting
Fast switching speed	t_R = 2.8 ns, t_F = 1.7 ns - Minimizes transition losses in high-frequency (>1 MHz) power converters
Low gate charge	Q_g = 4.3 nC - Reduces driver IC power consumption and simplifies gate drive design
Enhanced thermal performance	R_θJA = 136 °C/W with thermal bias - Supports higher sustained power in handheld devices with limited airflow
Green compliance	Halogen- and antimony-free, RoHS 3 compliant - Meets environmental requirements for consumer and medical electronics

Applications

Battery Charging Circuits

Portable DC-DC Converters

Use Scenario: Single-cell Li-ion charging path control in smartphones and wearables.

IC Role / Device Role / Timing Role: Load switch enabling/disabling charging current flow between adapter and battery protection IC.

Use Value: Low 0.6 V V_GS(th) ensures full enhancement under weak 2.5 V charger detection signals; 38 mΩ R_DS(on) limits voltage drop to <80 mV at 2 A.

Use Scenario: High-side synchronous rectifier in 3.3 V/5 V buck converters for Bluetooth headsets.

IC Role / Device Role / Timing Role: Power switch in main switching stage, driven by integrated controller PWM signal.

Use Value: 8.5 ns t_D(off) and 1.7 ns t_F support stable 2 MHz operation with minimal dead-time penalty and reduced output ripple.

USB Power Delivery Switching

Power Management Functions in IoT Sensors

Use Scenario: VBUS path switch in USB-C port controllers managing dual-role power sourcing/sinking.

IC Role / Device Role / Timing Role: Bidirectional power path MOSFET controlled by USB PD policy engine.

Use Value: 20 V V_DSS safely handles up to 20 V PP (USB PD 3.0 extended power range); low leakage (<1 µA IDSS) preserves standby battery life.

Use Scenario: Enable-controlled power gating for RF transceivers and sensor front-ends in LPWAN nodes.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch isolating subsystems during deep-sleep modes.

Use Value: 0.4 V min V_GS(th) allows direct control from 1.8 V MCU GPIO; 100 nA IGSS prevents unintended wake-up via gate leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2058U-7	R_DS(on) = 28 mΩ @ V_GS = 4.5V; higher 4.5 A I_D; same SOT23 package	Better conduction efficiency at >2.5 A loads; slightly higher gate charge (5.1 nC)	Select when lower conduction loss outweighs gate drive complexity in fixed 4.5 V gate-drive systems.
AO3400	R_DS(on) = 28 mΩ @ V_GS = 10V; V_GS(th) = 0.7–1.4 V; higher 5.7 A I_D; same SOT23	Requires ≥3.3 V gate drive for full enhancement; less suitable for 1.8 V logic interfaces	Prefer where gate drive voltage ≥3.3 V is guaranteed and higher peak current capability is needed.

Compared with DMN2056U-13, DMN2058U-7 offers lower R_DS(on) but demands more gate drive energy, while AO3400 provides higher current rating but lacks guaranteed turn-on below 2.5 V - making DMN2056U-13 optimal for ultra-low-voltage, space-constrained battery-powered designs.

Availability

DMN2056U-13 is available at Aetrix Electronics and suitable for battery charging circuits, portable DC-DC converters, and USB power delivery switching requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN2056U-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN2056U belongs to Diodes' low-voltage power MOSFET product line, engineered specifically for high-efficiency, small-footprint power management in portable and battery-operated electronics.

FAQ

What is the maximum safe operating junction temperature for DMN2056U-13?

The DMN2056U-13 is rated for junction temperatures from –55°C to +150°C. Its absolute maximum T_J is +150°C, and thermal derating begins above +125°C per the SOA curve. The device maintains specified R_DS(on) and V_GS(th) performance across this full range, with normalized on-resistance variation ≤10% at +150°C versus +25°C.

Can DMN2056U-13 be used in a 1.8 V logic-controlled switching application?

Yes - its gate threshold voltage ranges from 0.4 V (min) to 1.0 V (max), with typical 0.6 V at I_D = 250 µA. At V_GS = 1.8 V, it delivers R_DS(on) ≈ 65 mΩ and I_D ≈ 2.5 A, enabling functional switching in 1.8 V microcontroller systems without external level shifters or gate drivers.

Does DMN2056U-13 have avalanche rating or ruggedness specifications?

No avalanche rating is specified in the DS38480 datasheet. The device is not characterized for repetitive unclamped inductive switching (UIS) events. For applications involving inductive loads, external clamping (e.g., TVS diodes or RC snubbers) is required to limit V_DS overshoot within the 20 V V_DSS rating.

Is the SOT23 package of DMN2056U-13 compatible with standard reflow profiles for lead-free assembly?

Yes - the device uses matte tin–annealed terminals and complies with JEDEC J-STD-020 moisture sensitivity Level 1. It supports standard Pb-free reflow profiles (peak 260°C, 10–30 sec above 217°C), and its UL 94V-0 molding compound withstands multiple reflow cycles without delamination or warpage.

DMN2056U-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.3 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 339 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 940mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN2056U-13 FAQ

1.How can I place an order for DMN2056U-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2056U-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2056U-13 reliable?

The price and inventory of DMN2056U-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2056U-13 is usually 5 days.

3.What payment methods are accepted for DMN2056U-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2056U-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2056U-13?

DMN2056U-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2056U-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2056U-13?

For technical support, including DMN2056U-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2056U-13 requirements.

6.How does Aetrix verify that DMN2056U-13 is sourced from the original manufacturer or authorized distributors?

All DMN2056U-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2056U-13 meets industry standards.

7.What is the process for return or replacement of DMN2056U-13?

All DMN2056U-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2056U-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2056U-13 part is unused and in its original packaging.

Return procedure for DMN2056U-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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