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Diodes Incorporated DMN2075UDW-7
- Part No.:
- DMN2075UDW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN2075UDW-7.pdf
- Description:
- MOSFET N-CH 20V 2.8A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:2,950
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Product details
Overview
DMN2075UDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 20V VDS, 48 mΩ RDS(on) at VGS = 4.5V, and 2.8A continuous drain current at 25°C. It features low input capacitance (594 pF Ciss), fast switching (7.4 ns tD(on)), and AEC-Q101 qualification for automotive power management.
For engineers reviewing the DMN2075UDW-7 datasheet, DMN2075UDW-7 pinout, DMN2075UDW-7 application, or DMN2075UDW-7 equivalent, key selection criteria include its dual-channel configuration, 2.5V gate threshold compatibility, thermal resistance of 221°C/W (RθJA), and suitability for space-constrained DC-DC converter topologies requiring low conduction loss and fast turn-on.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single SOT363 package, enabling synchronous rectification or load-switching with shared gate drive. Its 0.4–1.0V gate threshold range supports logic-level control from 1.8V to 4.5V microcontrollers, while low Crss (57.7 pF) minimizes Miller-induced shoot-through risk in half-bridge configurations.
The device employs trench-gate process technology to achieve 40 mΩ typical RDS(on) at 4.5V, with guaranteed 48 mΩ max under production test conditions. Thermal design is constrained by 0.58W total power dissipation on 2oz copper FR-4 with 1-inch² pad, and junction-to-case resistance of 65°C/W enables localized heatsinking in compact modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - Supports 12V rail switching and 5V logic-compatible power stages without derating |
| RDS(on) @ 4.5V | 48 mΩ max - Enables ≤130 mW conduction loss at 2.8A, critical for high-efficiency buck converters |
| Qg | 7.0 nC - Low gate charge reduces driver power demand and enables >1 MHz PWM operation |
| Ciss | 594 pF - Limits capacitive loading on gate drivers; compatible with standard 1Ω–10Ω series gate resistors |
| tD(on) | 7.4 ns - Fast turn-on minimizes overlap loss in synchronous rectifiers and motor H-bridges |
| TJ Range | −55°C to +150°C - Validated for under-hood automotive environments and industrial temperature cycling |
| AEC-Q101 | Qualified - Meets stress testing requirements for automotive electronics including HTGB, HTRB, and TC |
Pinout & Package
Package: SOT363 (SC-70-6), surface-mount, 6-pin plastic case with matte tin-plated Alloy42 leadframe; moisture sensitivity level 1 per J-STD-020; weight ≈ 0.006 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires external gate resistor for EMI control |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; tied to ground or low-side return path in half-bridge |
| 3 (D1) | Drain of Channel 1 | High-current output node; routed to inductor or load; thermally coupled to package backside |
| 4 (D2) | Drain of Channel 2 | Second high-current output; electrically isolated from D1 but shares thermal mass in package |
| 5 (S2) | Source of Channel 2 | Independent source node; enables dual low-side switching or independent load control |
| 6 (G2) | Gate of Channel 2 | Separate gate terminal for second channel; allows asynchronous or phase-shifted drive |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 2.5V | 59 mΩ max - Enables direct drive from 2.5V I/O banks without level-shifting |
| Low Coss | 64.5 pF - Reduces turn-off energy loss and improves light-load efficiency in resonant topologies |
| Fast tD(off) | 28.1 ns - Short delay supports precise dead-time control in synchronous buck regulators |
| Body diode VSD | 0.75 V typ - Low forward voltage minimizes reverse-recovery losses during freewheeling |
| RoHS & "Green" | Lead-free, halogen-free molding compound - Complies with IPC-1752 and EU Directive 2011/65/EU |
Applications
| Automotive Body Control Module | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Controlling LED lighting loads and solenoid actuators in door modules and seat controls. IC Role / Device Role: Dual low-side switch managing independent 12V loads with coordinated PWM dimming. Use Value: 48 mΩ RDS(on) limits self-heating to <100 mW per channel at 2A, eliminating need for external heatsinks in sealed enclosures. | Use Scenario: Implementing bidirectional power path control in portable chargers supporting USB PD 3.0. IC Role / Device Role: Dual-channel load switch enabling simultaneous VBUS sourcing and sinking with reverse-current blocking. Use Value: Independent G1/G2 control allows seamless transition between sink/source modes without cross-conduction, leveraging 57.7 pF Crss for stable gate drive. |
| Industrial DC-DC Converter | Smartphone PMIC Load Switch |
Use Scenario: Synchronous rectification in 5V-to-3.3V buck converters powering FPGA I/O banks. IC Role / Device Role: Dual N-MOSFET replacing discrete Schottky diodes to improve conversion efficiency above 85%. Use Value: 7.4 ns tD(on) and 6.7 ns tf enable tight dead-time tuning, reducing body-diode conduction and associated losses. | Use Scenario: Peripherals power gating in battery-powered handheld devices with strict leakage budgets. IC Role / Device Role: Dual independent load switches isolating camera, audio codec, and sensor subsystems. Use Value: 100 nA max IGSS at ±8V ensures <1 µA total off-state leakage across both channels, preserving battery life over weeks of standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2075LSD-13 | Same die, SO-8 package; higher RθJA (110°C/W); 3.5A ID rating | Requires larger PCB area; better suited for higher-power, lower-frequency switching | Select when thermal budget allows larger footprint and peak current exceeds 2.8A |
| NTMFS4C06NT1G | Single-channel, 30V, 2.8mΩ RDS(on); 12A ID; SO-8FL package | Not pin-compatible; requires redesign for dual-channel functionality | Choose only if single-channel topology suffices and ultra-low RDS(on) justifies added cost and layout change |
Compared with DMN2075UDW-7, DMN2075LSD-13 offers higher current handling in a larger package but sacrifices board space efficiency, while NTMFS4C06NT1G delivers superior conduction performance at the cost of losing dual-channel integration and requiring circuit rearchitecture.
Availability
DMN2075UDW-7 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, industrial DC-DC converters, and smartphone peripheral power gating requiring stable component supply and AEC-Q101 compliance.
Supply support for DMN2075UDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing facilities in China, Taiwan, and the U.S.
The DMN2075UDW-7 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for high-reliability automotive and industrial power management where space, thermal performance, and gate-drive simplicity are critical.
FAQ
What is the maximum safe operating junction temperature for DMN2075UDW-7?
The absolute maximum junction temperature is +150°C, validated per AEC-Q101 thermal stress tests. Operation above 125°C requires derating of continuous drain current to 2.1A at VGS = 2.5V and 2.2A at VGS = 4.5V, based on thermal resistance data for 2oz copper FR-4 with 1-inch² pad.
Can DMN2075UDW-7 be used in a synchronous buck converter's high-side position?
No - DMN2075UDW-7 is a dual N-channel MOSFET with no integrated bootstrap circuitry or level-shifting capability. It is designed exclusively for low-side or synchronous rectifier roles where gate drive referenced to source is feasible. High-side use would require external gate driver with floating supply.
Does the SOT363 package support hand-soldering or rework?
Yes - the SOT363 package is compatible with standard hot-air rework stations and IR reflow profiles. Its moisture sensitivity level 1 eliminates bake requirements, and matte tin plating ensures reliable solder wetting. Recommended preheat ramp rate is ≤3°C/s, peak temperature 260°C for ≤10 seconds.
How does the body diode forward voltage impact efficiency in discontinuous conduction mode?
With a typical VSD of 0.75V at 1A, the body diode contributes measurable conduction loss during freewheeling intervals. In DCM, this loss dominates at light loads; efficiency gains from synchronous rectification exceed 3% compared to Schottky diodes when channel RDS(on) is fully leveraged during active conduction phases.
DMN2075UDW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 594.3 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN2075UDW-7 FAQ
1.How can I place an order for DMN2075UDW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2075UDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2075UDW-7 reliable?
The price and inventory of DMN2075UDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2075UDW-7 is usually 5 days.
3.What payment methods are accepted for DMN2075UDW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2075UDW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2075UDW-7?
DMN2075UDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2075UDW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2075UDW-7?
For technical support, including DMN2075UDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2075UDW-7 requirements.
6.How does Aetrix verify that DMN2075UDW-7 is sourced from the original manufacturer or authorized distributors?
All DMN2075UDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2075UDW-7 meets industry standards.
7.What is the process for return or replacement of DMN2075UDW-7?
All DMN2075UDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2075UDW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2075UDW-7 part is unused and in its original packaging.
Return procedure for DMN2075UDW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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