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Diodes Incorporated DMN2080UCB4-7
- Part No.:
- DMN2080UCB4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, WLBGA
- Datasheet:
-
DMN2080UCB4-7.pdf
- Description:
- MOSFET N-CH 20V 3A X2-WLB0606-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,955
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Product details
Overview
DMN2080UCB4-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 0.8 mm × 0.8 mm WLCSP package, rated for 20 V VDSS, 43 mΩ RDS(ON) at VGS = 4.5 V, and 4.0 A continuous drain current. It features a low 0.7 V typical gate threshold voltage and integrated G-S ESD protection (2 kV HBM), targeting high-efficiency load switching in space-constrained DC-DC converters and battery management systems.
For engineers reviewing the DMN2080UCB4-7 datasheet, DMN2080UCB4-7 pinout, DMN2080UCB4-7 application, or DMN2080UCB4-7 equivalent, key selection criteria include its ultra-small footprint, low RDS(ON) at 1.5–2.5 V drive, thermal resistance of 99 °C/W on enhanced PCB layout, and body diode recovery time of 5 ns - all critical for compact, high-frequency power stages.
Technical Context
This MOSFET employs trench-MOS technology to achieve low on-resistance while maintaining fast switching performance. Its 0.7 V VGS(TH) enables direct interfacing with low-voltage logic (e.g., 1.8 V GPIO), and the built-in source-drain diode supports synchronous rectification with 0.7 V forward drop at 1 A.
The X2-WLB0808-4 (Type B) wafer-level chip-scale package uses four solder bumps with 0.4 mm pitch and 0.35 mm profile, requiring precise stencil-defined solder paste deposition. Thermal performance is highly layout-dependent: RθJA drops from 176 °C/W (minimal pad) to 99 °C/W (1-inch² copper plate).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 3.3 V/5 V rail switching and battery-side load control |
| RDS(ON) | 43 mΩ @ VGS = 4.5 V - Enables <172 mW conduction loss at 2 A, critical for thermally limited wearables |
| VGS(TH) | 0.7 V typ. - Allows turn-on from 1.8 V logic without level-shifting, reducing BOM count |
| Qg | 7.4 nC - Low gate charge supports >1 MHz switching in buck converters with minimal driver loss |
| tRR | 5 ns - Fast body diode recovery minimizes shoot-through risk in synchronous buck topologies |
| Package | X2-WLB0808-4 (Type B) - 0.8 mm × 0.8 mm, 0.35 mm height, 4-bump WLCSP for ultra-dense PCB layouts |
| PD (enhanced layout) | 1.25 W - Supports 3.2 A continuous current at +70°C ambient with 1-inch² copper pour |
Pinout & Package
Package: X2-WLB0808-4 (Type B), wafer-level chip-scale package with four solder bumps in 2×2 array. Dimensions: 0.81 mm × 0.81 mm × 0.35 mm. Pin 1 identifier is marked by a corner bump offset.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Bump 1 (Top-Left) | Source | Primary current return path; tied to PCB ground plane for lowest inductance and thermal resistance |
| Bump 2 (Top-Right) | Drain | Main power output node; connects to switch-node in buck converter or battery cathode in load switch |
| Bump 3 (Bottom-Left) | Source | Second source connection to reduce package resistance and improve current sharing |
| Bump 4 (Bottom-Right) | Gate | Control input; requires <100 pF routing to minimize ringing; no external gate resistor needed below 2 MHz |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) at low VGS | 68 mΩ @ VGS = 1.5 V - Enables efficient operation directly from 1.8 V microcontroller GPIO |
| Integrated G-S ESD protection | 2 kV HBM - Eliminates need for external TVS diodes in portable battery-connected circuits |
| Wafer-level CSP footprint | 0.8 mm × 0.8 mm - Saves >70% board area vs. comparable SOT-23 or SC-70 MOSFETs |
| Low-profile construction | 0.35 mm max height - Compatible with stacked PCB assemblies and thin end-products (e.g., smart bands) |
| Halogen- and antimony-free | <900 ppm Br+Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 environmental compliance for global OEMs |
Applications
| Battery Protection Circuit | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: Isolating Li-ion battery during overvoltage/overtemperature fault conditions in portable medical monitors. IC Role / Device Role: Primary high-side load switch controlling battery discharge path. Use Value: 43 mΩ RDS(ON) limits voltage drop to <86 mV at 2 A, preserving battery runtime and enabling accurate voltage sensing. | Use Scenario: Enabling/disabling 5 V/3 A USB-C power path in docking stations with strict 1 ms response time. IC Role / Device Role: Low-side load switch driven by USB-PD controller GPIO. Use Value: 0.7 V VGS(TH) ensures full turn-on from 1.8 V PD controller outputs, eliminating level shifters and reducing latency. |
| Wearable DC-DC Converter High-Side Switch | Smartphone PMIC Output Stage |
Use Scenario: High-frequency (2 MHz) buck converter supplying 1.2 V core power to BLE SoC in hearables. IC Role / Device Role: Synchronous rectifier in 2 MHz buck topology. Use Value: 5 ns body diode tRR prevents reverse recovery losses, sustaining >92% efficiency at light loads. | Use Scenario: Output stage of multi-rail PMIC powering camera ISP and display interface in smartphones. IC Role / Device Role: Independent load switch per rail, controlled via I²C-configured GPIO. Use Value: 0.35 mm profile allows placement under narrow flex cables, avoiding mechanical interference in slim bezel designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2075UFB4-7 | RDS(ON) = 38 mΩ @ 4.5 V; same package; higher Qg (8.5 nC) | Better conduction loss but slower switching; less suitable for >1.5 MHz apps | Prefer when thermal margin is tight and switching frequency ≤1 MHz |
| AO3414 | SOT-23 package; RDS(ON) = 50 mΩ @ 4.5 V; 1.1 V VGS(TH); 1.1 mm height | Larger footprint and height; no integrated ESD diode; requires external protection | Choose only if WLCSP assembly capability is unavailable or rework requirements demand leaded package |
Compared with DMN2080UCB4-7, DMN2075UFB4-7 trades slightly higher gate drive loss for lower conduction loss, while AO3414 sacrifices size, ESD robustness, and low-threshold drive to enable standard SMT rework - making DMN2080UCB4-7 optimal for miniaturized, high-reliability battery-powered systems.
Availability
DMN2080UCB4-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and USB-C load switching requiring stable component supply across high-mix, low-volume production runs.
Supply support for DMN2080UCB4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This device belongs to Diodes' advanced WLCSP MOSFET product line, engineered specifically for ultra-compact, high-efficiency power management in portable and wearable electronics where board space and thermal headroom are severely constrained.
FAQ
What is the maximum continuous drain current for DMN2080UCB4-7 at +70°C ambient?
The DMN2080UCB4-7 supports 3.2 A continuous drain current at TA = +70°C when mounted on an FR-4 board with a 1-inch² copper pour (Note 6). This rating assumes VGS ≥ 4.5 V and accounts for thermal resistance of 99 °C/W. Derating is required above +70°C ambient per the SOA curve in Figure 11.
Does DMN2080UCB4-7 require external gate resistors for 2 MHz switching?
No external gate resistor is required for stable 2 MHz operation. With only 7.4 nC total gate charge and low gate resistance (1 kΩ), the device achieves clean turn-on/turn-off edges using direct MCU GPIO drive. Layout inductance must be minimized - keep gate trace <2 mm and avoid vias between driver and gate bump.
Can DMN2080UCB4-7 be used in reverse polarity protection circuits?
No - it is an N-channel MOSFET optimized for low-side or high-side switching with gate drive referenced to source. For reverse polarity protection, a P-channel device (e.g., DMN6070LSD) or dedicated protection IC is required. The body diode conducts from source to drain, not drain to source, limiting its use in that topology.
Is the X2-WLB0808-4 package compatible with standard reflow profiles?
Yes - the DMN2080UCB4-7's X2-WLB0808-4 package is qualified for standard Pb-free reflow per J-STD-020, with peak temperature up to 260°C. Diodes recommends using Type 4 or 5 solder paste and verifying voiding via cross-section analysis, especially given the 0.219 mm bump height and 0.4 mm pitch.
DMN2080UCB4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 4-XFBGA, WLBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 56mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.4 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 710mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-WLB0606-4
DMN2080UCB4-7 FAQ
1.How can I place an order for DMN2080UCB4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2080UCB4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2080UCB4-7 reliable?
The price and inventory of DMN2080UCB4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2080UCB4-7 is usually 5 days.
3.What payment methods are accepted for DMN2080UCB4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2080UCB4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2080UCB4-7?
DMN2080UCB4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2080UCB4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2080UCB4-7?
For technical support, including DMN2080UCB4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2080UCB4-7 requirements.
6.How does Aetrix verify that DMN2080UCB4-7 is sourced from the original manufacturer or authorized distributors?
All DMN2080UCB4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2080UCB4-7 meets industry standards.
7.What is the process for return or replacement of DMN2080UCB4-7?
All DMN2080UCB4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2080UCB4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2080UCB4-7 part is unused and in its original packaging.
Return procedure for DMN2080UCB4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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