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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2104L-7

Name: DMN2104L-7
Brand: Diodes Incorporated
SKU: DMN2104L-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2104L-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN2104L-7.pdf

Description:: MOSFET N-CH 20V 4.3A SOT23-3

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Inventory:5,725

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Product details

Overview

DMN2104L-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT-23 package, rated for 20 V V_DSS, 4.3 A continuous drain current, and 53 mΩ R_DS(on) at V_GS = 4.5 V. It features low gate threshold (0.45–1.4 V), fast switching, and AEC-Q101 qualification-used in automotive load switching, USB power switches, and portable DC-DC converter high-side control.

For engineers reviewing the DMN2104L-7 datasheet, DMN2104L-7 pinout, DMN2104L-7 application, or DMN2104L-7 equivalent, this device supports low-voltage logic-level drive, operates reliably across –55°C to +150°C, and delivers stable on-resistance under pulsed and thermal stress conditions typical in space-constrained power management designs.

Technical Context

This MOSFET employs a planar silicon process optimized for low R_DS(on) at V_GS ≥ 2.5 V, enabling direct interface with 3.3 V and 2.5 V microcontroller GPIOs. Its 325 pF C_iss and 70 pF C_rss support efficient switching up to several MHz in synchronous buck topologies.

The device integrates a body diode with 0.7–1.2 V forward voltage at 1.0 A, suitable for freewheeling in low-duty-cycle boost converters. Thermal resistance of 90°C/W (Junction-to-Ambient, FR-4 PCB) defines its derating envelope under sustained 1.4 W power dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage before avalanche; enables use in 12 V automotive and 5 V/3.3 V system rails.
R_DS(on) @ V_GS = 4.5 V	53 mΩ - Ensures ≤ 0.95 W conduction loss at 4.3 A DC, critical for thermally constrained SOT-23 layouts.
I_D (continuous)	4.3 A - Rated for steady-state load switching in USB PD adapters and LED drivers without external heatsinking.
V_GS(th)	0.45–1.4 V - Guarantees turn-on with 1.8 V logic; eliminates need for gate boosters in battery-powered IoT nodes.
C_iss	325 pF - Limits gate drive current demand; compatible with low-power MCU GPIOs driving ≤ 100 kHz PWM.
T_J range	–55°C to +150°C - Validated for under-hood automotive modules and industrial motor controllers per AEC-Q101.

Pinout & Package

Package: SOT-23 (JEDEC TO-236AB), surface-mount, 3-terminal plastic case with matte tin-plated copper leadframe; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; forms common node with body diode cathode.
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; driven directly by 1.8–5 V logic without level shift.
3 (Drain)	Current entry point into channel	Connected to load or supply rail; carries full switched current and must be routed with low-inductance layout.

Key Features

Feature	Design Value
Low R_DS(on) at 2.5 V drive	104 mΩ - Enables functional operation even with degraded gate drive, improving fault tolerance in brown-out conditions.
AEC-Q101 qualified	Stress-tested for automotive temperature cycling, HTRB, and ESD (HBM ≥ 2 kV) - approved for engine control and ADAS power stages.
RoHS & "Green" compliant	No lead, halogen, or antimony; UL 94V-0 molding compound - meets EU ELV and China RoHS II requirements for end-of-life recycling.
Low C_oss (92 pF)	Reduces turn-off energy loss and improves efficiency in high-frequency DC-DC converters (>500 kHz).

Applications

Automotive Body Control Module

USB Type-C Power Delivery Switch

Use Scenario: Controlling 12 V lighting loads (LED lamps, solenoids) in door modules and seat controls.

IC Role / Device Role / Timing Role: High-side load switch with integrated protection; replaces discrete FET + driver + sense resistor.

Use Value: Eliminates external gate resistor and pull-down; reduces BOM count by 3 components while maintaining AEC-Q101 compliance.

Use Scenario: Enabling/disabling 5–20 V power paths in portable chargers and docking stations.

IC Role / Device Role / Timing Role: Logic-level controlled power switch with fast turn-on (<20 ns) and low quiescent current.

Use Value: Supports USB PD 3.0 programmable power supply sequencing with <1 µA off-state leakage.

Portable DC-DC Converter High-Side Switch

Industrial Sensor Node Power Gating

Use Scenario: Synchronous rectification in 3.3 V output buck converters for wearables and medical monitors.

IC Role / Device Role / Timing Role: Low-R_DS(on) high-side FET paired with external low-side switch or controller IC.

Use Value: Achieves >92% efficiency at 1 A load due to 53 mΩ on-resistance and minimal gate charge (Q_g = 5.2 nC).

Use Scenario: Power gating of BLE transceivers and MEMS accelerometers during sleep mode in predictive maintenance sensors.

IC Role / Device Role / Timing Role: Ultra-low-leakage load switch isolating subsystems; complements PMIC sleep control signals.

Use Value: Reduces system standby current to <100 nA via 500 nA max I_DSS, extending battery life beyond 5 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2058U-7	R_DS(on) = 30 mΩ @ 4.5 V; higher ID (6.5 A); same SOT-23 package but larger die size	Better thermal margin in 5 A continuous loads; requires tighter layout due to higher peak current capability	Select when >4.3 A DC current or lower conduction loss is required; verify PCB copper area supports 2.0 W dissipation.
AO3400	R_DS(on) = 44 mΩ @ 4.5 V; no AEC-Q101 qualification; C_iss = 570 pF	Lower cost for consumer-grade applications; unsuitable for automotive due to unqualified reliability testing	Acceptable for non-automotive USB switches or battery management where AEC-Q101 is not mandated.

Compared with DMN2104L-7, DMN2058U-7 offers lower on-resistance for higher-current designs but demands greater board-level thermal design effort, while AO3400 trades automotive qualification and lower capacitance for cost savings in commercial applications.

Availability

DMN2104L-7 is available at Aetrix Electronics and suitable for automotive body electronics, USB power delivery systems, and portable DC-DC converter designs requiring stable component supply, AEC-Q101 compliance, and logic-level gate drive compatibility.

Supply support for DMN2104L-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan and China.

The DMN2104L-7 belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for automotive and industrial power switching where low-voltage drive, high reliability, and small footprint are mandatory.

FAQ

What is the maximum safe operating voltage for DMN2104L-7 in continuous DC applications?

The absolute maximum drain-source voltage is 20 V, and operation above this risks avalanche breakdown. For reliable long-term use, apply ≤16 V DC to maintain 20% voltage margin per AEC-Q101 derating guidelines. Transient spikes must be clamped externally if exceeding 20 V, even briefly.

Can DMN2104L-7 be used as a high-side switch with 3.3 V GPIO control?

Yes-its V_GS(th) range (0.45–1.4 V) and R_DS(on) = 53 mΩ at V_GS = 4.5 V ensure robust turn-on with 3.3 V drive. At 3.3 V, R_DS(on) rises to ~68 mΩ (interpolated from Fig. 3), still supporting ≤3.5 A continuous current within thermal limits on standard FR-4.

Does DMN2104L-7 include integrated ESD protection?

Yes-it is qualified to AEC-Q101, which mandates HBM ESD testing ≥2 kV. The device incorporates on-die protection structures meeting this requirement; no external TVS diode is needed for basic I/O-level ESD immunity in automotive environments.

How does ambient temperature affect R_DS(on) performance?

R_DS(on) increases linearly with junction temperature: normalized resistance reaches 1.6× at 150°C vs. 25°C (Fig. 5). At 85°C ambient with 1.4 W dissipation, junction temperature approaches 215°C-exceeding rating. Derate current to ≤2.8 A above 70°C ambient to stay within 150°C T_J.

DMN2104L-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 53mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN2104L-7 FAQ

1.How can I place an order for DMN2104L-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2104L-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2104L-7 reliable?

The price and inventory of DMN2104L-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2104L-7 is usually 5 days.

3.What payment methods are accepted for DMN2104L-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2104L-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2104L-7?

DMN2104L-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2104L-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2104L-7?

For technical support, including DMN2104L-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2104L-7 requirements.

6.How does Aetrix verify that DMN2104L-7 is sourced from the original manufacturer or authorized distributors?

All DMN2104L-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2104L-7 meets industry standards.

7.What is the process for return or replacement of DMN2104L-7?

All DMN2104L-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2104L-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2104L-7 part is unused and in its original packaging.

Return procedure for DMN2104L-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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