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Diodes Incorporated DMN2120UFCL-7
- Part No.:
- DMN2120UFCL-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUFDFN
- Datasheet:
-
DMN2120UFCL-7.pdf
- Description:
- MOSFET N-CH 20V 1.8A 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,023
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Product details
Overview
DMN2120UFCL-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in a U-DFN1616-6 package, optimized for low-voltage load switching with RDS(ON) = 57 mΩ (typ) at VGS = 4.5V, 3.6A, and 1.8A continuous drain current at +25°C. It features ESD-protected gate, 0.6 mm profile, and 2.56 mm² PCB footprint-used in portable power management and battery-powered USB load switches.
For engineers reviewing the DMN2120UFCL-7 datasheet, DMN2120UFCL-7 pinout, DMN2120UFCL-7 application, or DMN2120UFCL-7 equivalent, key selection criteria include gate threshold voltage (0.3–1.0 V), thermal resistance (108 °C/W on 1-inch copper), body diode forward voltage (0.7–1.2 V), and pulsed drain capability (10 A).
Technical Context
This MOSFET employs a trench-gate process to achieve ultra-low RDS(ON) while maintaining fast switching performance: tD(ON) = 0.6 ns, tR = 2.7 ns, Qg = 1.4 nC (at VGS = 4.5V). Its low VGS(TH) enables direct drive from 1.8V/2.5V logic outputs without level shifting.
The device integrates an intrinsic body diode with tRR = 10 ns and QRR = 1.0 nC, supporting synchronous rectification in compact DC-DC converters. Thermal design is enabled by validated RθJA values: 270 °C/W (standard FR-4) and 108 °C/W (enhanced copper pad).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 3.3V/5V rail protection and single-cell Li-ion (≤4.2V) systems. |
| RDS(ON) | 57 mΩ (typ) @ VGS = 4.5V - Enables <100 mW conduction loss at 1.5A, critical for thermally constrained wearables. |
| ID (cont) | 1.8 A @ TA = +25°C - Sustains full load in always-on PMIC output stages without derating on minimal copper. |
| VGS(TH) | 0.3–1.0 V - Ensures reliable turn-on with 1.8V GPIOs and avoids shoot-through in dual-MOSFET configurations. |
| Qg | 1.4 nC @ VGS = 4.5V - Reduces gate drive power and enables high-frequency (>1 MHz) PWM control with low driver stress. |
| tRR | 10 ns - Limits reverse recovery loss during hard-switching in buck converters operating above 500 kHz. |
| RθJA | 108 °C/W - Validated on 1-inch square 2 oz copper; supports 1.16 W dissipation at ambient +70°C. |
Pinout & Package
U-DFN1616-6 (Type K) surface-mount package: 1.6 mm × 1.6 mm × 0.6 mm, no leads, exposed thermal pad (Pin 6), RoHS-compliant NiPdAu plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; ESD-protected; requires ≤12 V swing; low Ciss (130 pF) minimizes drive loss. |
| 2 | Source (S) | Return path for load current; tied to system ground or common source node in high-side switch layout. |
| 3 | Drain (D) | High-side connection point; routed over thermal pad for heat spreading; handles up to 10 A pulsed. |
| 4 | Source (S) | Second source terminal-bond-wire parallel path to reduce package inductance and improve current sharing. |
| 5 | Drain (D) | Second drain terminal-low-inductance path to power rail; used with Pin 3 for symmetric current distribution. |
| 6 | Thermal Pad (EP) | Exposed copper pad; must be soldered to PCB ground plane or dedicated thermal copper for RθJA = 108 °C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-thin profile (0.6 mm) | Enables integration into space-constrained modules like Bluetooth earbuds and smartwatches where Z-height is capped at 0.7 mm. |
| Low RDS(ON) at 2.5V drive | 140 mΩ @ VGS = 2.5V ensures <200 mW loss at 1.2A-critical for 2.5V I/O domain load switching in SoC power domains. |
| ESD-protected gate | HBM rating ≥2 kV per JESD22-A114; eliminates need for external gate protection in handheld ESD-prone environments. |
| Halogen- and antimony-free | Meets IPC-1752A "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb); required for EU medical and consumer product certifications. |
| Moisture sensitivity Level 1 | No bake requirement before reflow; compatible with standard SMT assembly lines without dry-pack handling. |
Applications
| USB Type-C Port Power Switching | Li-ion Battery Protection Circuit |
|---|---|
|
Use Scenario: Controlling VBUS enable/disable in portable USB-C accessories with strict 0.6 mm height budget. IC Role / Device Role / Timing Role: Low-side load switch managing 5 V/1.5 A power path; driven directly by microcontroller GPIO. Use Value: 57 mΩ RDS(ON) limits voltage drop to <85 mV at 1.5 A, preserving USB spec compliance; 0.6 mm profile fits stacked PCB designs. |
Use Scenario: Secondary overcurrent protection in single-cell battery packs for IoT sensors and wearables. IC Role / Device Role / Timing Role: High-side switch isolating battery from load during fault; controlled by protection IC's discharge FET driver. Use Value: 1.8 A continuous rating supports 1C discharge; low VGS(TH) ensures turn-on even as battery voltage drops to 3.0 V. |
| Always-On PMIC Output Stage | Compact DC-DC Synchronous Rectifier |
|
Use Scenario: Providing regulated 3.3 V supply to real-time clock and sensor interface in battery-backed systems. IC Role / Device Role / Timing Role: Pass transistor in LDO-like configuration; biased with fixed VGS for stable dropout control. Use Value: 100 mΩ max RDS(ON) at 2.5 V ensures <250 mV dropout at 2.5 mA standby current-extending battery life >3 months. |
Use Scenario: Replacing Schottky diode in 1.2 V/3 A buck converter for wearable display backlight drivers. IC Role / Device Role / Timing Role: Synchronous rectifier in low-VOUT topology; driven by controller's complementary gate signal. Use Value: 10 ns tRR and 1.0 nC QRR minimize dead-time loss; 57 mΩ RDS(ON) cuts conduction loss by 65% vs. 0.35 V Schottky. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016UFCL-7 | RDS(ON) = 42 mΩ @ 4.5 V (lower), but VDSS = 20 V same; higher Qg = 1.8 nC. | Better efficiency at high current; less suitable for 1.8 V drive due to higher VGS(TH) (0.5–1.2 V). | Select when primary goal is minimizing conduction loss above 1.5 A and gate drive voltage ≥2.5 V is available. |
| AO3414 | SO-23 package (3.0 × 1.4 mm); RDS(ON) = 55 mΩ @ 4.5 V; RθJA = 150 °C/W (higher thermal resistance). | Larger footprint and taller profile (1.1 mm); unsuitable for ultra-thin devices requiring <0.65 mm Z-height. | Choose only if board-level reworkability or legacy SO-23 footprint compatibility is mandatory. |
Compared with DMN2120UFCL-7, DMN2016UFCL-7 delivers lower RDS(ON) at cost of higher gate charge and tighter VGS(TH) tolerance, while AO3414 trades miniaturization for mechanical serviceability-making DMN2120UFCL-7 optimal for next-gen thin-profile battery switches.
Availability
DMN2120UFCL-7 is available at Aetrix Electronics and suitable for USB-C accessory power switching, Li-ion battery protection circuits, and always-on PMIC output stages requiring stable component supply, consistent lead-free sourcing, and tight thermal profile control.
Supply support for DMN2120UFCL-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
This part belongs to Diodes' U-DFN ultra-thin MOSFET product line, engineered specifically for space-constrained portable electronics requiring sub-1 mm height, low-voltage logic compatibility, and high reliability under thermal cycling.
FAQ
What is the maximum safe operating junction temperature for DMN2120UFCL-7?
The absolute maximum junction temperature is +150°C, and the device is characterized across –55°C to +150°C. Derating begins at +70°C ambient for continuous operation: ID drops from 1.8 A to 1.4 A. Transient thermal resistance data (Figure 13) supports short-pulse operation up to 10 A within safe SOA limits.
Can DMN2120UFCL-7 be used in high-side switch configurations?
Yes-it is rated for high-side use with proper gate drive. Its VGS(TH) range (0.3–1.0 V) and low RDS(ON) allow direct drive from a charge pump or bootstrap circuit generating ≥4.5 V gate voltage relative to source. Layout must minimize source inductance to avoid oscillation during switching.
Is the thermal pad (Pin 6) electrically isolated or connected internally?
The exposed thermal pad (Pin 6) is internally connected to the source terminals (Pins 2 and 4) in the U-DFN1616-6 package. It must be soldered to a PCB copper pour tied to the source net to achieve the specified RθJA = 108 °C/W; floating or grounding to a different potential violates safe operating conditions.
Does DMN2120UFCL-7 require external gate resistors for typical load-switch applications?
No external gate resistor is required for basic ON/OFF load switching at ≤10 kHz. However, a 10–47 Ω series resistor is recommended for PWM frequencies >100 kHz to damp ringing caused by gate-source capacitance (Ciss = 130 pF) interacting with PCB trace inductance-verified in Diodes' application note AN-5001.
DMN2120UFCL-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.8 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 130 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 450mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN1616-6 (Type K)
DMN2120UFCL-7 FAQ
1.How can I place an order for DMN2120UFCL-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2120UFCL-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2120UFCL-7 reliable?
The price and inventory of DMN2120UFCL-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2120UFCL-7 is usually 5 days.
3.What payment methods are accepted for DMN2120UFCL-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2120UFCL-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2120UFCL-7?
DMN2120UFCL-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2120UFCL-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2120UFCL-7?
For technical support, including DMN2120UFCL-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2120UFCL-7 requirements.
6.How does Aetrix verify that DMN2120UFCL-7 is sourced from the original manufacturer or authorized distributors?
All DMN2120UFCL-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2120UFCL-7 meets industry standards.
7.What is the process for return or replacement of DMN2120UFCL-7?
All DMN2120UFCL-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2120UFCL-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2120UFCL-7 part is unused and in its original packaging.
Return procedure for DMN2120UFCL-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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