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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2170U-7

Name: DMN2170U-7
Brand: Diodes Incorporated
SKU: DMN2170U-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2170U-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN2170U-7.pdf

Description:: MOSFET N-CH 20V 2.3A SOT23-3

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Inventory:2,239

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Product details

Overview

DMN2170U-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET designed for low-voltage, high-efficiency switching in space-constrained DC-DC converters and load switches. It delivers R_DS(on) = 70 mΩ at V_GS = 4.5 V, V_DSS = 20 V, I_D = 2.3 A continuous, and features ultra-low gate threshold voltage (V_GS(th) = 0.45–1.0 V) enabling 1.8 V logic-level drive in portable power management.

For engineers reviewing the DMN2170U-7 datasheet, DMN2170U-7 pinout, DMN2170U-7 application, or DMN2170U-7 equivalent, key selection criteria include its AEC-Q101 qualification, SOT-23 package compatibility with 1.5 V/2.5 V/4.5 V gate drive profiles, ESD-protected gate (3 kV HBM), and thermal resistance of 208 °C/W on FR-4 PCBs.

Technical Context

This MOSFET operates as a single N-channel silicon switch optimized for battery-powered systems requiring fast turn-on with minimal gate charge. Its low V_GS(th) enables direct interface with 1.8 V and 2.5 V microcontrollers, while the integrated ESD protection diode eliminates need for external gate clamping in handheld designs.

The device uses a planar trench process to achieve stable R_DS(on) across temperature (normalized to 1.2× at 125°C) and supports pulsed drain current up to 8 A. Dynamic parameters-C_iss = 217 pF, C_oss = 62 pF, C_rss = 34 pF at V_DS = 10 V-enable efficient high-frequency (>1 MHz) synchronous buck operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage for 3.3 V rail and Li-ion battery (2.5–4.2 V) applications
R_DS(on) @ V_GS = 4.5 V	70 mΩ - Enables ≤165 mW conduction loss at 2.3 A, critical for thermally limited SOT-23 layouts
V_GS(th)	0.45–1.0 V - Guarantees full enhancement with 1.8 V GPIO, eliminating level-shifter requirement
I_D (continuous)	2.3 A - Sustained current capability under 600 mW power dissipation limit on standard FR-4
C_iss	217 pF - Low input capacitance reduces gate drive power and speeds switching in 1–3 MHz converters
ESD Rating	3 kV HBM - Integrated protection avoids external TVS in consumer-grade USB/load-switch designs
AEC-Q101 Qualified	Yes - Validated for automotive body electronics including infotainment power sequencing

Pinout & Package

Package: SOT-23 (JEDEC TO-236AB), surface-mount, 3-terminal plastic case with matte tin-plated copper leadframe; moisture sensitivity level 1 per J-STD-020D.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; internal connection to substrate for thermal conduction
2 (Gate)	Control electrode for channel inversion	ESD-protected input; requires <100 nC total gate charge for full turn-on at 4.5 V
3 (Drain)	Main current output terminal	High-side switch node; rated for 20 V transient spikes in buck converter hot-swap applications

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(th) down to 0.45 V ensures reliable turn-on with 1.8 V logic, reducing system BOM count
Low R_DS(on) at 2.5 V drive	100 mΩ at V_GS = 2.5 V supports 3.3 V MCU interfaces without gate boosting
Thermally robust SOT-23	R_θJA = 208 °C/W allows 2.3 A operation on 2 oz copper pads without heatsink
Automotive-qualified reliability	AEC-Q101 stress-tested for 1000-hour HTOL, 1000-cycle TC, and unbiased HAST
Green RoHS-compliant construction	Halogen-, antimony-, and lead-free molding compound meets UL 94V-0 flammability rating

Applications

USB Power Switching

Li-ion Battery Protection

Use Scenario: Selective power routing in USB-C PD sink devices with dual-input (adapter/battery) paths.

IC Role / Device Role: Low-side load switch controlling VBUS discharge and reverse-current blocking.

Use Value: 70 mΩ R_DS(on) limits voltage drop to <160 mV at 2.3 A, preserving USB 2.0 signaling integrity.

Use Scenario: Secondary overcurrent cutoff in single-cell battery packs for wearables.

IC Role / Device Role: Charge/discharge path FET controlled by fuel-gauge IC's enable signal.

Use Value: 0.45 V V_GS(th) ensures activation even during deep-discharge (2.8 V cell voltage).

Automotive Body Control

IoT Sensor Node Power Gating

Use Scenario: LED driver dimming and mirror heater control in door modules.

IC Role / Device Role: High-side switch driven by 3.3 V CAN/LIN transceiver GPIO pins.

Use Value: AEC-Q101 qualification guarantees operation at −40°C to +125°C ambient without derating.

Use Scenario: Wake-up power gating for BLE SoCs in battery-operated environmental sensors.

IC Role / Device Role: Always-on LDO bypass switch activated by RTC alarm signal.

Use Value: 1 μA I_DSS leakage preserves 10-year shelf life in coin-cell-powered deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053U-7	R_DS(on) = 45 mΩ @ 4.5 V; V_DSS = 20 V; higher gate charge (Q_g = 5.2 nC vs. 4.1 nC)	Better efficiency above 3 A but larger die size increases cost and thermal mass	Prefer when peak current exceeds 2.5 A and board area permits slightly larger thermal pad
AO3400	R_DS(on) = 40 mΩ @ 4.5 V; V_GS(th) = 0.7–1.4 V; no AEC-Q101 qualification	Lower on-resistance but unreliable 1.8 V drive due to higher V_GS(th) min	Select only for non-automotive consumer designs where gate drive ≥2.5 V is guaranteed

Compared with DMN2170U-7, DMN2053U-7 offers lower conduction loss at high current but sacrifices gate drive flexibility, while AO3400 lacks automotive reliability validation and risks incomplete turn-on below 2.5 V.

Availability

DMN2170U-7 is available at Aetrix Electronics and suitable for USB power delivery, Li-ion battery protection, and automotive body electronics requiring stable component supply and long-term lifecycle support.

Supply support for DMN2170U-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMN2170U-7 belongs to Diodes' "Green" logic-level MOSFET product line, engineered specifically for energy-efficient, space-constrained power management in portable and automotive electronics.

FAQ

What is the maximum safe operating temperature for DMN2170U-7 in continuous use?

The DMN2170U-7 has a junction-to-ambient thermal resistance of 208 °C/W on standard FR-4 PCBs. With 600 mW maximum power dissipation, it reaches thermal equilibrium at 125°C junction temperature when ambient is 25°C and board layout follows minimum copper pad recommendations. Derating is required above 85°C ambient.

Can DMN2170U-7 be used as a high-side switch with 3.3 V gate drive?

Yes - its V_GS(th) range (0.45–1.0 V) and R_DS(on) = 100 mΩ at V_GS = 2.5 V ensure full enhancement with 3.3 V logic. However, a level-shifter or charge pump is needed for true high-side configuration with floating source, as the device is not designed for bootstrap gate drive.

Does DMN2170U-7 include intrinsic body diode functionality?

Yes - it integrates a monolithic body diode with V_SD = 0.7–0.9 V at I_S = 1.05 A and reverse recovery time t_rr < 30 ns. This enables synchronous rectification in buck converters and freewheeling in motor drivers without external diodes.

Is tape-and-reel packaging available for DMN2170U-7, and what is the standard reel quantity?

Yes - DMN2170U-7 ships in SOT-23 tape-and-reel format per ordering code DMN2170U-7, with 3000 units per reel. Reel dimensions and orientation comply with EIA-481-D standards, and packaging includes moisture barrier bags with desiccant for MSL Level 1 handling.

DMN2170U-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 217 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 600mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN2170U-7 FAQ

1.How can I place an order for DMN2170U-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2170U-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2170U-7 reliable?

The price and inventory of DMN2170U-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2170U-7 is usually 5 days.

3.What payment methods are accepted for DMN2170U-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2170U-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2170U-7?

DMN2170U-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2170U-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2170U-7?

For technical support, including DMN2170U-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2170U-7 requirements.

6.How does Aetrix verify that DMN2170U-7 is sourced from the original manufacturer or authorized distributors?

All DMN2170U-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2170U-7 meets industry standards.

7.What is the process for return or replacement of DMN2170U-7?

All DMN2170U-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2170U-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2170U-7 part is unused and in its original packaging.

Return procedure for DMN2170U-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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