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Diodes Incorporated DMN21D1UDA-7B

Part No.:
DMN21D1UDA-7B
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-SMD, No Lead
Datasheet:
AetrixDMN21D1UDA-7B.pdf
Description:
MOSFET 2N-CH 20V 0.455A 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,304

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Product details

Overview

DMN21D1UDA-7B from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in an ultra-small X2-DFN0806-6 package (0.8 mm × 0.6 mm), rated for 20 V VDSS, 0.99 Ω RDS(ON) at VGS = 4.5 V, and 455 mA continuous drain current at TA = +25°C. It features a low 1.0 V max gate threshold voltage and ESD-protected gates, enabling reliable operation in space-constrained, low-voltage power management circuits such as portable battery-powered load switching.

For engineers reviewing the DMN21D1UDA-7B datasheet, DMN21D1UDA-7B pinout, DMN21D1UDA-7B application, or DMN21D1UDA-7B equivalent, key selection criteria include its dual-channel configuration, sub-1V logic-compatible gate drive, ultra-low on-resistance at 1.5–2.5 V VGS, thermal resistance of 405 °C/W, and qualification for high-density PCB layouts with minimal pad area.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel has separate source, drain, and gate terminals. Its 1.0 V max VGS(TH) enables direct interfacing with 1.2–1.8 V I/O domains, while low Ciss (31 pF) and fast switching times (tD(ON) = 4.5 ns, tF = 12 ns) support efficient high-frequency PWM control.

The device uses a thermally optimized DFN package with exposed copper paddle for enhanced heat dissipation, and each gate includes integrated protection diodes to suppress ESD transients up to ±2 kV HBM. Its RDS(ON) remains stable across −55°C to +150°C junction temperature, with <10% variation over full range at VGS = 4.5 V.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS20 V - supports input rails up to 18 V with 10% margin for transient spikes
RDS(ON) @ VGS = 4.5 V0.99 Ω max - delivers ≤45 mW conduction loss at 300 mA load
VGS(TH) max1.0 V - ensures full enhancement with 1.2 V supply, compatible with modern ultra-low-voltage MCUs
ID continuous @ 25°C455 mA - sufficient for driving LED strings, sensor bias networks, or small solenoids
Ciss31 pF - minimizes gate drive power and enables clean edge integrity above 10 MHz switching
PD310 mW - defines maximum steady-state power handling on standard FR-4 with minimum pad layout
RθJA405 °C/W - requires thermal-aware layout (e.g., ≥20 mm² copper pour) for >150 mW operation

Pinout & Package

Package: X2-DFN0806-6 - ultra-compact 0.8 mm × 0.6 mm, 0.36 mm height, 6-terminal leadless plastic package with exposed thermal paddle. Compliant with J-STD-020 Level 1 moisture sensitivity and RoHS/"Green" requirements.

Pin/TerminalCircuit RoleDesign Meaning
D1Drain of Channel 1High-side or low-side switch node; electrically isolated from D2
S1Source of Channel 1Return path for Channel 1; tied to ground or load common in high-side config
G1Gate of Channel 1Logic-level control input; ESD-protected, 113 Ω gate resistance limits ringing
D2Drain of Channel 2Independent switch node; no internal connection to D1 or S1
S2Source of Channel 2Independent return path; allows dual independent load control
G2Gate of Channel 2Second logic-level input; identical electrical characteristics to G1

Key Features

FeatureDesign Value
Ultra-low gate thresholdVGS(TH) ≤ 1.0 V enables direct drive from 1.2 V/1.8 V I/O without level shifting
Dual independent channelsNo shared terminals - supports two completely isolated switching paths in one footprint
ESD-protected gatesIntegrated gate protection diodes rated to ±2 kV HBM reduce external TVS requirements
Low-input capacitanceCiss = 31 pF minimizes gate charge (Qg = 0.41 nC), easing MCU GPIO drive burden
Thermally robust DFNExposed paddle and 405 °C/W RθJA allow 310 mW dissipation with minimal board area

Applications

Portable Power SwitchingLow-Voltage Sensor Biasing

Use Scenario: Enabling/disabling power to Bluetooth LE modules, PMIC rails, or display backlight drivers in wearables and hearing aids.

IC Role / Device Role: Dual-channel load switch controlling two independent 1.8–3.3 V subsystems.

Use Value: Sub-1V VGS(TH) eliminates need for gate driver ICs; 0.99 Ω RDS(ON) keeps dropout under 300 mV at 300 mA.

Use Scenario: Providing programmable bias current to analog sensors (e.g., gas, humidity, temperature) in IoT edge nodes.

IC Role / Device Role: Precision current-source switch regulating sensor excitation via PWM-controlled duty cycle.

Use Value: Fast 4.5 ns turn-on delay and low Ciss ensure accurate timing alignment with ADC sampling windows.

USB-C Port Power ControlSmartphone Camera Actuator Drive

Use Scenario: Managing VBUS path and CC line termination in compact USB-C receptacles where board space is limited to <1.5 mm².

IC Role / Device Role: Dual N-MOSFET implementing VBUS switch and CC pull-up/down resistor control.

Use Value: 0.8 mm × 0.6 mm footprint replaces two discrete SOT-723 FETs, saving >60% board area.

Use Scenario: Driving voice coil motors (VCM) or piezo actuators in auto-focus camera modules requiring bidirectional current pulses.

IC Role / Device Role: Half-bridge switch pair (with external high-side driver) delivering controlled 200–400 mA pulses.

Use Value: Low 1.2 Ω RDS(ON) at VGS = 2.5 V ensures >85% efficiency during short-duration actuation bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2016LFG-7Single-channel, same package; 20 V, 0.75 Ω @ 4.5 V, 600 mA IDLacks dual-channel integration; requires two units for same functionalitySelect when higher single-channel current rating is prioritized over integration density
AO6401Dual N-channel in TSOP-6; 30 V, 2.2 Ω @ 4.5 V, 4.5 A ID, larger 2.9 mm × 1.6 mm footprintHigher voltage/current capability but incompatible with ultra-dense layoutsSelect when system requires >20 V operation or >500 mA per channel with relaxed size constraints

Compared with DMN21D1UDA-7B, DMN2016LFG-7 offers lower RDS(ON) but doubles component count and board area, while AO6401 provides higher voltage headroom and current capacity at the cost of 6× larger footprint-making DMN21D1UDA-7B optimal for miniaturized 1.2–3.3 V systems where dual-channel integration and sub-1V gate drive are essential.

Availability

DMN21D1UDA-7B is available at Aetrix Electronics and suitable for portable medical monitors, wireless sensor nodes, and USB-C accessory designs requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMN21D1UDA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and communications markets.

The DMN21D1UDA belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained, low-voltage power switching in battery-operated and wearable electronics.

FAQ

What is the maximum safe operating junction temperature for DMN21D1UDA-7B?

The absolute maximum junction temperature is +150°C, validated across all operating conditions per the datasheet. Derating begins at +125°C ambient when dissipating >150 mW; thermal design must maintain TJ ≤ 150°C using the specified RθJA = 405 °C/W and recommended PCB pad layout.

Can DMN21D1UDA-7B be used in a high-side switch configuration?

Yes-each channel operates independently and supports high-side switching when the source is connected to the load and the drain to VIN. Gate drive must exceed VIN by ≥VGS(TH); for 3.3 V rail, a 4.5 V gate drive is recommended to ensure RDS(ON) < 1 Ω.

Is the X2-DFN0806-6 package compatible with standard reflow profiles?

Yes-the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 sec max). The matte tin finish ensures reliable solder wetting, and the 0.13 mm nominal lead thickness accommodates fine-pitch stencil printing.

Does DMN21D1UDA-7B include body diode conduction capability?

Yes-each channel includes an intrinsic body diode (anode at source, cathode at drain) with typical forward voltage of 0.6 V at 10 mA. This enables freewheeling in inductive loads and reverse-current blocking in back-to-back configurations, though external Schottky diodes may be added for faster recovery in high-frequency applications.

DMN21D1UDA-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-SMD, No Lead
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
455mA (Ta)
Rds On (Max) @ Id, Vgs:
990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.41nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
31pF @ 15V
Power - Max:
310mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN0806-6

DMN21D1UDA-7B FAQ

1.How can I place an order for DMN21D1UDA-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN21D1UDA-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN21D1UDA-7B reliable?

The price and inventory of DMN21D1UDA-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN21D1UDA-7B is usually 5 days.

3.What payment methods are accepted for DMN21D1UDA-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN21D1UDA-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN21D1UDA-7B?

DMN21D1UDA-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN21D1UDA-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN21D1UDA-7B?

For technical support, including DMN21D1UDA-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN21D1UDA-7B requirements.

6.How does Aetrix verify that DMN21D1UDA-7B is sourced from the original manufacturer or authorized distributors?

All DMN21D1UDA-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN21D1UDA-7B meets industry standards.

7.What is the process for return or replacement of DMN21D1UDA-7B?

All DMN21D1UDA-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN21D1UDA-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN21D1UDA-7B part is unused and in its original packaging.

Return procedure for DMN21D1UDA-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN21D1UDA-7B Tags

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