Diodes Incorporated DMN21D2UFB-7

Overview

DMN21D2UFB-7 from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in an ultra-small X1-DFN1006-3 package (1.0 × 0.6 × 0.5 mm), featuring R_DS(ON) = 0.99 Ω @ V_GS = 4.5 V, V_GS(TH) ≤ 1.0 V, and 760 mA continuous drain current at T_A = +25°C. It serves as a low-voltage load switch in space-constrained power management circuits such as USB port protection and battery-powered sensor nodes.

For engineers reviewing the DMN21D2UFB-7 datasheet, DMN21D2UFB-7 pinout, DMN21D2UFB-7 application, or DMN21D2UFB-7 equivalent, key selection criteria include gate threshold voltage compatibility with 1.8 V logic, on-resistance at low V_GS, thermal resistance under PCB-limited dissipation, and ESD-protected gate integrity in high-density layouts.

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low R_DS(ON) while maintaining fast switching (t_D(ON) = 3.5 ns, t_f = 9.8 ns) and low input capacitance (C_iss = 27.6 pF). Its sub-1V gate threshold enables direct drive from 1.8 V I/O rails without level shifting.

The device integrates an intrinsic body diode with V_SD = 0.6 V @ I_S = 150 mA and supports bidirectional current flow in analog switch configurations. Thermal performance is defined for two mounting conditions: R_θJA = 325 °C/W (minimum pad) and 141 °C/W (enhanced thermal vias), enabling design flexibility across cost- and performance-tier PCBs.

Key Specifications

Pinout & Package

Package: X1-DFN1006-3 - ultra-compact 1.0 mm × 0.6 mm, 0.5 mm max height, 3-terminal leadless plastic package with NiPdAu-plated copper leadframe and UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage load switch applications.

Compared with DMN2016LFG-7 and AO3400A, DMN21D2UFB-7 uniquely balances ultra-low V_GS(TH), compact size, and moderate R_DS(ON)-making it optimal for 1.8 V–driven, space-constrained load switching where gate drive simplicity and PCB real estate are prioritized over absolute lowest on-resistance.

Availability

DMN21D2UFB-7 is available at Aetrix Electronics and suitable for USB power switching, wearable sensor biasing, LED flash control, and battery protection circuits requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN21D2UFB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' DFN-series low-voltage MOSFET product line, engineered specifically for space- and power-constrained portable electronics requiring direct 1.8 V logic compatibility and minimal thermal footprint.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN21D2UFB-7 supports 610 mA continuous drain current at T_A = +70°C with standard FR-4 mounting (no thermal vias), and 700 mA under pulsed conditions (t < 5 s). Derating follows R_θJA = 325 °C/W; exceeding these limits risks junction temperature exceeding 150°C.

Is the exposed thermal pad electrically isolated?

No-the exposed pad (Pin 4, not numbered in top view but present in X1-DFN1006-3 outline) is internally connected to the drain terminal. It must be soldered to a PCB copper pour tied to the drain net to achieve specified R_θJA = 141 °C/W and prevent thermal runaway under sustained load.

Can this MOSFET be used in linear (ohmic) mode for analog switching?

Yes-its low R_DS(ON) variation across V_GS (0.6–3.0 Ω from 1.5–4.5 V) and low C_oss (4.0 pF) make it suitable for analog signal routing in low-frequency (<1 MHz), low-voltage (<5 V) applications, provided gate drive remains within ±12 V and power dissipation stays within 0.25 W at T_A = +70°C.

Does the "-7" suffix indicate tape-and-reel packaging?

Yes-the "-7" suffix denotes 3,000-unit tape-and-reel packaging in 8 mm wide carrier tape with 4 mm pitch, per Diodes' ordering information. The alternate "-7B" variant uses 2 mm pitch and 10,000-unit reels, but both share identical electrical and thermal specifications.