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Diodes Incorporated DMN2250UFB-7B
- Part No.:
- DMN2250UFB-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-UFDFN
- Datasheet:
-
DMN2250UFB-7B.pdf
- Description:
- MOSFET N-CH 20V 1.35A 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,999
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Product details
Overview
DMN2250UFB from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage, high-efficiency power management. It delivers RDS(on) of 170 mΩ at VGS = 4.5 V, 1.35 A continuous drain current, and a gate threshold voltage ≤1.0 V - enabling operation with 1.8 V logic-level drive in compact DC-DC converters.
For engineers reviewing the DMN2250UFB datasheet, DMN2250UFB pinout, DMN2250UFB application, or DMN2250UFB equivalent, key selection criteria include its ultra-low VGS(th), sub-1Ω on-resistance at 2.5 V drive, DFN1006-3 footprint compatibility, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs a trench-gate process to simultaneously minimize RDS(on) and input capacitance (Ciss = 94 pF), supporting fast switching (tD(on) = 4.3 ns, tD(off) = 59.4 ns) with low gate charge (Qg = 1.4 nC at 4.5 V). Its body diode exhibits VSD = 0.7–1.2 V at 150 mA, suitable for synchronous rectification.
The device integrates ESD protection on gate terminals and operates across –55°C to +150°C junction temperature. Thermal resistance RθJA is 278°C/W on FR-4 with minimum pad layout, limiting steady-state power dissipation to 0.5 W at 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports input rails up to 18 V in buck converters without derating |
| RDS(on) | 170 mΩ @ VGS = 4.5 V - enables <100 mW conduction loss at 1.35 A |
| VGS(th) | ≤1.0 V - ensures full enhancement with 1.8 V microcontroller GPIOs |
| ID (continuous) | 1.35 A @ TA = 25°C - sufficient for point-of-load regulators up to ~5 W |
| Ciss | 94 pF - reduces gate drive power and improves switching efficiency at >1 MHz |
| Qg | 1.4 nC @ VGS = 4.5 V - allows low-current gate drivers (e.g., 10 mA peak) to achieve <10 ns rise time |
| TJ range | –55°C to +150°C - qualified per AEC-Q101 for under-hood automotive modules |
Pinout & Package
Package: X1-DFN1006-3 (1.0 × 0.6 mm, 0.5 mm height), lead-free NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Connected to ground or low-side return path; largest thermal pad area for heat sinking |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input requiring <1 µA leakage; ESD-protected for ±8 V rating |
| Pin 3 (Drain) | Power output terminal (D) | Connected to switched node; exposed drain pad on bottom provides electrical and thermal connection |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(th) ≤ 1.0 V enables direct drive from 1.8 V/2.5 V logic without level shifters |
| Low RDS(on) at low VGS | 230 mΩ @ 2.5 V - maintains efficiency in battery-powered systems with weak gate drive |
| Small-footprint DFN package | X1-DFN1006-3 saves >70% board area vs. SOT-23 while improving thermal performance |
| ESD-protected gate | Withstands ±8 V HBM per JESD22-A114 - eliminates need for external gate protection in most layouts |
Applications
| USB Power Delivery Switch | Automotive Cabin Controller |
|---|---|
Use Scenario: Selecting between USB-C upstream and downstream power paths in portable docking stations. IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V/3 A power rail with minimal voltage drop. Use Value: 170 mΩ RDS(on) limits dropout to <510 mV at 3 A, preserving bus voltage compliance. | Use Scenario: Driving LED backlight dimming circuits in instrument cluster displays. IC Role / Device Role / Timing Role: PWM-controlled high-speed switch for constant-current LED strings. Use Value: 59.4 ns turn-off delay and 25.4 ns fall time support >100 kHz PWM without duty-cycle distortion. |
| Wearable Battery Charger | Industrial Sensor Node |
Use Scenario: Enabling/disabling charging current to Li-ion cells in hearables with 1.8 V MCU control. IC Role / Device Role / Timing Role: Logic-level controlled pass element in linear charger path. Use Value: 1.0 V max VGS(th) guarantees turn-on with 1.8 V GPIO, eliminating external bias circuitry. | Use Scenario: Isolating 3.3 V sensor supply during deep-sleep mode in wireless IoT nodes. IC Role / Device Role / Timing Role: Low-quiescent-power enable switch for PMIC output rails. Use Value: 100 nA IDSS at 20 V ensures <200 nW leakage, extending battery life beyond 10 years in sleep state. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2050UFB-7 | RDS(on) = 150 mΩ @ 4.5 V; higher ID = 1.5 A; same X1-DFN1006-3 package | Better conduction efficiency above 1.3 A; identical footprint and drive requirements | Select when system peak current exceeds 1.35 A and thermal margin is constrained |
| AO3400 | RDS(on) = 42 mΩ @ 10 V but 200 mΩ @ 2.5 V; SOT-23 package; no AEC-Q101 qualification | Larger footprint, higher gate charge (Qg = 11 nC), not automotive-qualified | Acceptable for cost-sensitive consumer designs where AEC-Q101 and 1.8 V drive are not required |
Compared with DMN2250UFB, DMN2050UFB-7 offers lower conduction loss at higher currents but identical drive and packaging, while AO3400 trades automotive reliability and low-VGS performance for legacy SOT-23 compatibility and higher 10 V RDS(on) efficiency.
Availability
DMN2250UFB is available at Aetrix Electronics and suitable for USB PD switches, automotive cabin controllers, and wearable battery chargers requiring stable component supply, AEC-Q101 compliance, and 1.8 V logic compatibility.
Supply support for DMN2250UFB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.
The DMN2250UFB belongs to Diodes' X1-DFN logic-level MOSFET product line, engineered specifically for space-constrained, low-voltage power switching in automotive infotainment, portable electronics, and industrial sensors.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMN2250UFB supports 1.03 A continuous drain current at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad size). This derating reflects thermal limits imposed by RθJA = 278°C/W and PD = 0.3 W at that temperature.
Does this MOSFET require external gate resistors for EMI control?
No external gate resistor is required for basic ESD or latch-up immunity due to integrated gate protection. However, a 10 Ω series resistor is recommended in high-speed switching applications (e.g., >500 kHz) to damp ringing caused by Lstray × Ciss resonance and reduce radiated emissions.
Can DMN2250UFB be used in reverse-biased configurations?
Yes - its body diode supports forward conduction up to 1 A continuous (IS), with VSD = 0.7–1.2 V at 150 mA. Reverse-bias operation (drain negative relative to source) is limited by VDSS = 20 V; exceeding this risks avalanche breakdown unless energy-limited.
Is the X1-DFN1006-3 package compatible with standard reflow profiles?
Yes - the DMN2250UFB's X1-DFN1006-3 package is rated for moisture sensitivity level 1 (MSL-1) and supports JEDEC J-STD-020-compliant lead-free reflow profiles, including peak temperatures up to 260°C for ≤60 seconds, with no pre-bake required.
DMN2250UFB-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.1 nC @ 10 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 94 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
DMN2250UFB-7B FAQ
1.How can I place an order for DMN2250UFB-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2250UFB-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2250UFB-7B reliable?
The price and inventory of DMN2250UFB-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2250UFB-7B is usually 5 days.
3.What payment methods are accepted for DMN2250UFB-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2250UFB-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2250UFB-7B?
DMN2250UFB-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2250UFB-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2250UFB-7B?
For technical support, including DMN2250UFB-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2250UFB-7B requirements.
6.How does Aetrix verify that DMN2250UFB-7B is sourced from the original manufacturer or authorized distributors?
All DMN2250UFB-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2250UFB-7B meets industry standards.
7.What is the process for return or replacement of DMN2250UFB-7B?
All DMN2250UFB-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2250UFB-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2250UFB-7B part is unused and in its original packaging.
Return procedure for DMN2250UFB-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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