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Diodes Incorporated DMN2300UFB-7B
- Part No.:
- DMN2300UFB-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-UFDFN
- Datasheet:
-
DMN2300UFB-7B.pdf
- Description:
- MOSFET N-CH 20V 1.32A 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,608
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Product details
Overview
DMN2300UFB-7B from Diodes Incorporated is a 20V N-channel enhancement-mode MOSFET in X1-DFN1006-3 package, optimized as a low-profile load switch with RDS(ON) = 175 mΩ @ VGS = 4.5V, ID = 1.32 A, and gate threshold voltage of 0.45–0.95 V, deployed in space-constrained portable power rails and battery protection circuits.
For engineers reviewing the DMN2300UFB-7B datasheet, DMN2300UFB-7B pinout, DMN2300UFB-7B application, or DMN2300UFB-7B equivalent, key selection criteria include ultra-small footprint (0.6 mm²), low VGS(TH) enabling 1.8 V logic compatibility, fast switching (tF = 10.62 ns), thermal resistance of 104 °C/W on enhanced pad layout, and ESD-protected gate.
Technical Context
This MOSFET employs planar silicon process technology to achieve low RDS(ON) while maintaining robust gate oxide integrity and sub-1 V threshold control. Its channel design supports stable conduction down to 1.8 V drive, with dynamic parameters-Qg = 0.89 nC, Qgd = 0.16 nC, and Ciss = 67.6 pF-optimized for minimal switching loss in high-frequency load switching.
The device integrates an intrinsic body diode with VSD = 0.7–1.2 V at IS = 300 mA and exhibits normalized RDS(ON) drift of ≤1.6× from –55°C to +150°C, confirming suitability for ambient-variable industrial and consumer environments without derating penalties.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail protection |
| RDS(ON) | 175 mΩ @ VGS = 4.5 V - Enables <100 mW conduction loss at 1.32 A continuous current |
| ID (max) | 1.32 A @ TA = +25°C - Sustained current capability on standard FR-4 PCB with minimum pad layout |
| VGS(TH) | 0.45–0.95 V - Ensures reliable turn-on with 1.8 V GPIO or low-voltage microcontroller outputs |
| Qg | 0.89 nC - Low gate charge reduces driver power demand and enables <5 ns turn-on delay |
| RθJA | 104 °C/W - Achievable with 25 mm × 25 mm copper pour, supporting 1.2 W power dissipation |
| Ciss | 67.6 pF - Limits capacitive loading on driving logic and stabilizes gate waveform integrity |
Pinout & Package
Package: X1-DFN1006-3 - 0.6 mm² footprint, 0.5 mm profile, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Connected to load side of power rail; thermally coupled to exposed pad for heat dissipation |
| Source (S) | Reference node for gate control and current return | Bonded to PCB ground plane; defines VGS reference and carries full load current |
| Gate (G) | Control electrode for channel modulation | ESD-protected input requiring <0.89 nC charge for full enhancement; sensitive to overvoltage beyond ±8 V |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-compact DFN package | X1-DFN1006-3 occupies 0.6 mm² - 13× smaller than SOT-23, enabling dense wearable PCB layouts |
| Low gate threshold voltage | VGS(TH) down to 0.45 V ensures turn-on with 1.8 V logic, eliminating level-shifters in modern MCU interfaces |
| ESD-protected gate structure | Integrated protection withstands >2 kV HBM per JESD22-A114, reducing external TVS requirements in portable designs |
| Fast switching performance | tF = 10.62 ns and tD(OFF) = 21.71 ns support >1 MHz load switching without shoot-through risk |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Class 3 reporting and RoHS 3 compliance |
Applications
| Smartphone Power Sequencing | USB-C Port Power Switching |
|---|---|
|
Use Scenario: Controlled enable/disable of camera module, display backlight, or sensor subsystem during boot or sleep transitions. IC Role / Device Role: Load switch isolating auxiliary rails from main PMIC output to prevent backfeed and leakage. Use Value: 175 mΩ RDS(ON) limits voltage drop to <230 mV at 1.3 A, preserving margin for 3.3 V logic supply tolerance. |
Use Scenario: Hot-swap power control for USB-C receptacle VBUS line, responding to CC logic state changes. IC Role / Device Role: Single-pole, single-throw (SPST) power switch managing 5 V delivery with reverse-current blocking. Use Value: 0.45–0.95 V VGS(TH) allows direct drive from USB PD controller GPIO, eliminating discrete bias networks. |
| Wireless Earbud Battery Protection | IoT Sensor Node Rail Management |
|
Use Scenario: Isolating charging circuitry from battery during deep sleep to reduce quiescent current below 1 µA. IC Role / Device Role: Low-leakage high-side switch placed between Li-ion cell and system load. Use Value: IDSS ≤ 1 µA at VDS = 20 V ensures <10 nA effective off-state drain, extending shelf life by months. |
Use Scenario: Dynamic powering of BLE transceiver, environmental sensors, and MCU peripherals based on activity state. IC Role / Device Role: Programmable rail switch enabling firmware-controlled power domain partitioning. Use Value: 0.5 mm profile fits under 1.0 mm height shields; 104 °C/W RθJA sustains 1.2 W burst loads without thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(ON) = 120 mΩ @ VGS = 4.5 V; higher ID = 2.2 A; same X1-DFN1006-3 package | Supports higher continuous current but requires larger gate drive energy (Qg = 1.2 nC) | Select when >1.5 A load current or lower conduction loss is prioritized over gate drive simplicity |
| AO3414 | RDS(ON) = 52 mΩ @ VGS = 4.5 V; SOT-23 package; VGS(TH) = 0.7–1.4 V; no ESD protection | Larger footprint (2.9 mm²), higher threshold, no integrated ESD clamp | Choose only if board area is unconstrained and external ESD protection is already implemented |
Compared with DMN2300UFB-7B, DMN2016LFG-7 delivers lower RDS(ON) at cost of increased Qg, while AO3414 trades compactness and ESD robustness for raw on-resistance-making DMN2300UFB-7B optimal for space- and reliability-critical 1.8 V–3.3 V systems.
Availability
DMN2300UFB-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port power switching, and wireless earbud battery protection requiring stable component supply across high-mix, low-volume production runs.
Supply support for DMN2300UFB-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.
The DMN2300UFB-7B belongs to Diodes' Ultra-Small Signal MOSFET product line, engineered specifically for miniaturized load switching in battery-powered and portable electronics where footprint, profile, and low-voltage drive are critical.
FAQ
What is the maximum continuous drain current for DMN2300UFB-7B at +85°C ambient?
At TA = +85°C with 2 oz copper FR-4 PCB and minimum recommended pad layout, the continuous drain current is 0.94 A. This rating reflects thermal derating due to reduced heat dissipation capacity at elevated ambient temperature, and assumes steady-state conduction without pulse duty cycling.
Does DMN2300UFB-7B require external gate resistors for typical load-switch operation?
No external gate resistor is required for basic on/off control at frequencies ≤100 kHz. The device's low Qg (0.89 nC) and internal gate resistance (~68.5 Ω) provide inherent damping; however, a 10–47 Ω series resistor is recommended when driving from high-speed MCU GPIO to suppress ringing in layouts with >5 cm trace length.
Can DMN2300UFB-7B be used in reverse-current blocking configurations?
Yes-the body diode is oriented source-to-drain, so placing the MOSFET as a high-side switch (source tied to input rail, drain to load) blocks reverse current flow when off. With VGS = 0 V, IDSS ≤ 1 µA at 20 V ensures negligible backfeed, making it suitable for bidirectional isolation in battery backup paths.
Is the X1-DFN1006-3 package compatible with standard reflow profiles for lead-free soldering?
Yes-X1-DFN1006-3 is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard Pb-free reflow profiles (peak 260°C, 60 sec max above 217°C). The NiPdAu finish ensures wetting reliability, and the 0.5 mm profile avoids tombstoning when using recommended stencil aperture (0.12 mm thickness, 0.15 mm × 0.15 mm opening).
DMN2300UFB-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 175mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.89 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 67.62 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 468mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
DMN2300UFB-7B FAQ
1.How can I place an order for DMN2300UFB-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2300UFB-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2300UFB-7B reliable?
The price and inventory of DMN2300UFB-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2300UFB-7B is usually 5 days.
3.What payment methods are accepted for DMN2300UFB-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2300UFB-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2300UFB-7B?
DMN2300UFB-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2300UFB-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2300UFB-7B?
For technical support, including DMN2300UFB-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2300UFB-7B requirements.
6.How does Aetrix verify that DMN2300UFB-7B is sourced from the original manufacturer or authorized distributors?
All DMN2300UFB-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2300UFB-7B meets industry standards.
7.What is the process for return or replacement of DMN2300UFB-7B?
All DMN2300UFB-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2300UFB-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2300UFB-7B part is unused and in its original packaging.
Return procedure for DMN2300UFB-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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