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Diodes Incorporated DMN2300UFL4-7

Part No.:
DMN2300UFL4-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-XFDFN Exposed Pad
Datasheet:
AetrixDMN2300UFL4-7.pdf
Description:
MOSFET 2N-CH 20V 2.11A 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,845

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Product details

Overview

DMN2300UFL4-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in a 6-pin X2-DFN1310-6 package, rated for 20V VDSS, 195mΩ RDS(ON) at VGS = 4.5V, and 2.11A continuous drain current at TA = +25°C. It serves as a compact, low-profile load switch in space-constrained power management circuits such as portable USB-C PD adapters and battery-powered IoT sensor nodes.

For engineers reviewing the DMN2300UFL4-7 datasheet, DMN2300UFL4-7 pinout, DMN2300UFL4-7 application, or DMN2300UFL4-7 equivalent, key selection criteria include its ultra-low 0.4mm profile, gate threshold voltage range (0.45–0.95V), sub-200mΩ on-resistance at 4.5V drive, ESD-protected gate, and thermal resistance of 90°C/W with enhanced pad layout.

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single ultra-compact DFN package, sharing common source terminals and enabling independent gate control for bidirectional or parallel switching configurations. Its low VGS(TH) enables direct interfacing with 1.8V/2.5V logic without level-shifting.

The device exhibits fast switching performance (tD(ON) ≤ 10ns, tF ≤ 25ns) and low gate charge (Qg = 3.2nC max), supporting high-frequency PWM control in DC-DC converters and smart load switches. Its RDS(ON) remains stable across −55°C to +150°C ambient, with normalized variation <1.6× at 150°C.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20V - Maximum blocking voltage before avalanche conduction; suitable for 5V–12V rail switching.
RDS(ON) 195mΩ @ VGS = 4.5V - Enables ≤420mW conduction loss at 2.11A, critical for thermally limited PCBs.
ID (continuous) 2.11A @ TA = +25°C - Sustained current capability with 1.39W power dissipation under enhanced thermal pad layout.
VGS(TH) 0.45–0.95V - Ensures reliable turn-on with 1.8V I/O microcontrollers and low-voltage PMICs.
Qg 3.2nC max - Reduces gate drive power and enables >1MHz switching in compact DC-DC regulators.
RθJA 90°C/W - Achieved with 1-inch² copper pour; allows 1.39W operation at ≤85°C ambient without heatsink.
Ciss 135.2pF max - Limits high-frequency gate oscillation risk and eases gate driver sizing.

Pinout & Package

Package: X2-DFN1310-6 - 1.3mm × 1.0mm footprint, 0.4mm maximum height, NiPdAu-plated copper leadframe, JEDEC-compliant Level 1 moisture sensitivity.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (Channel 1) Common-source connection for first MOSFET; electrically tied to exposed thermal pad (Pin 6).
4 Gate (Channel 1) Control terminal for first channel; ESD-protected, compatible with 1.8V logic thresholds.
5 Drain (Channel 1) High-side or low-side output node; rated for 20V, 2.11A continuous operation.
6 Thermal Pad / Source (Channel 2) Exposed copper pad for thermal conduction and electrical tie to second channel source; must be soldered to PCB ground plane.

Key Features

Feature Design Value
Ultra-small footprint 1.3mm² area - fits within tight spacing constraints of wearable and hearing aid PCBs.
Low-profile packaging 0.4mm max height - enables stacking under thin metal shields or in slim enclosures.
ESD-protected gate HBM ±2kV rating - eliminates need for external gate protection in consumer-grade assemblies.
Halogen- and antimony-free <900ppm Br, <900ppm Cl, <1000ppm Sb - meets IPC-1752A Class 3 environmental compliance.
Fast switching speed tF ≤ 25ns - minimizes transition losses in 500kHz–2MHz buck converter topologies.

Applications

USB-C Power Delivery Switching Wireless Earbud Battery Protection

Use Scenario: Bidirectional 5–20V power path control between USB-C port and internal Li-ion battery during charging and discharging.

IC Role / Device Role: Dual-channel load switch managing input sourcing and battery isolation with independent gate control.

Use Value: 195mΩ RDS(ON) limits voltage drop to <420mV at 2.11A, preserving PD negotiation accuracy and minimizing heat in 3.5mm-thick earbud housings.

Use Scenario: Overcurrent and short-circuit protection for primary battery cell in true wireless stereo (TWS) earbuds.

IC Role / Device Role: Low-side current-sense switch with integrated thermal shutdown margin via RDS(ON) stability up to 150°C.

Use Value: 0.4mm profile enables placement directly adjacent to 30mAh coin-cell battery without compromising mechanical stack-up or antenna clearance.

Smartwatch Display Backlight Control Industrial Sensor Node Power Gating

Use Scenario: PWM dimming of white LED backlight using constant-current sink configuration with dynamic current adjustment.

IC Role / Device Role: High-speed N-channel switch operating at 1–5kHz PWM frequency with minimal dead-time distortion.

Use Value: 3.2nC Qg ensures clean 10ns rise/fall edges, eliminating visible flicker and enabling precise 0.1% brightness resolution.

Use Scenario: Scheduled power cycling of LoRaWAN transceiver and MEMS accelerometer in battery-operated field sensors.

IC Role / Device Role: Ultra-low-leakage (IDSS ≤ 1µA) load switch enabling multi-year shelf life with <100nA standby current.

Use Value: Gate threshold of 0.45V guarantees full turn-on from 1.2V supply rails used in energy-harvesting PMUs, avoiding brownout-induced reset loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2020LFD-7 20V VDSS, 200mΩ RDS(ON) @ 4.5V, but single-channel only; same X2-DFN1310-6 package. Lacks dual-channel integration; requires two devices for independent switching paths. Select when board space permits duplication and thermal budget allows higher per-device RDS(ON).
AOB2018L 20V VDSS, 170mΩ RDS(ON) @ 4.5V, dual N-channel, but in larger TSOT-23-6 (2.9mm × 1.6mm) package. 3.7× larger footprint and 0.9mm height - incompatible with ultra-thin form factors. Select when lower on-resistance is prioritized over size and profile constraints.

Compared with DMN2300UFL4-7, DMN2020LFD-7 sacrifices channel count for identical packaging, while AOB2018L trades 3.7× area and 2.25× height for 13% lower RDS(ON); DMN2300UFL4-7 uniquely balances dual-channel functionality, 1.3mm² footprint, and sub-200mΩ performance.

Availability

DMN2300UFL4-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, wireless earbud battery protection circuits, and smartwatch display backlight drivers requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN2300UFL4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan and China.

This part belongs to Diodes' X2-DFN ultra-compact power MOSFET product line, engineered specifically for space- and thermal-constrained portable electronics where footprint, height, and low-voltage drive compatibility are primary design constraints.

FAQ

What is the maximum continuous drain current for DMN2300UFL4-7 at 85°C ambient?

At TA = +85°C, the continuous drain current is derated to 1.19A per channel, based on thermal limits with standard FR-4 PCB layout (2oz copper, minimum pad). This value assumes no additional copper pour and reflects junction temperature limiting to 150°C.

Can DMN2300UFL4-7 be used in a single-channel configuration with one gate left unconnected?

No - Pin 4 (Gate 1) and Pin 5 (Drain 1) form Channel 1; Pin 6 (Thermal Pad/Source 2) and the unmarked side terminals form Channel 2. Leaving either gate floating risks unintended turn-on due to capacitive coupling; both gates must be actively driven or pulled to source potential.

Is the thermal pad (Pin 6) electrically isolated from the sources?

No - the exposed thermal pad is internally connected to Source 2 and is not isolated. It must be soldered to a PCB ground or source net to ensure thermal performance and electrical integrity; floating the pad violates JEDEC mounting requirements and degrades RθJA by >100°C/W.

Does DMN2300UFL4-7 support 1.2V logic-level gate drive?

Not reliably - while VGS(TH) min is 0.45V, the RDS(ON) rises sharply below 1.5V: 520mΩ at 1.5V and undefined above that. For stable <200mΩ operation, ≥2.5V gate drive is required; 1.2V systems require gate boosting or level-shifting.

DMN2300UFL4-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-XFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.11A (Ta)
Rds On (Max) @ Id, Vgs:
195mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
128.6pF @ 25V
Power - Max:
1.39W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN1310-6 (Type B)

DMN2300UFL4-7 FAQ

1.How can I place an order for DMN2300UFL4-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2300UFL4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2300UFL4-7 reliable?

The price and inventory of DMN2300UFL4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2300UFL4-7 is usually 5 days.

3.What payment methods are accepted for DMN2300UFL4-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2300UFL4-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2300UFL4-7?

DMN2300UFL4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2300UFL4-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2300UFL4-7?

For technical support, including DMN2300UFL4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2300UFL4-7 requirements.

6.How does Aetrix verify that DMN2300UFL4-7 is sourced from the original manufacturer or authorized distributors?

All DMN2300UFL4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2300UFL4-7 meets industry standards.

7.What is the process for return or replacement of DMN2300UFL4-7?

All DMN2300UFL4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2300UFL4-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2300UFL4-7 part is unused and in its original packaging.

Return procedure for DMN2300UFL4-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN2300UFL4-7 Tags

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