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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN2310U-13

Name: DMN2310U-13
Brand: Diodes Incorporated
SKU: DMN2310U-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN2310U-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN2310U-13.pdf

Description:: MOSFET BVDSS: 8V~24V SOT23 T&R 1

Quantity:: RFQ Add To RFQ list

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Inventory:5,870

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Product details

Overview

DMN2310U-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 20V V_DSS, 175mΩ R_DS(ON) @ 4.5V V_GS, and 1.6A continuous drain current at 25°C - optimized for low-voltage load switching in portable power management circuits.

For engineers reviewing the DMN2310U-13 datasheet, DMN2310U-13 pinout, DMN2310U-13 application, or DMN2310U-13 equivalent, key selection criteria include gate threshold voltage (0.45–0.95V), ESD-protected gate, fast switching (t_D(ON) = 8ns), thermal resistance (R_θJA = 260°C/W on FR-4), and compatibility with 1.8V–4.5V logic-level drive.

Technical Context

This MOSFET operates as a single-N-channel silicon switch with low gate threshold enabling direct interface to 1.8V/2.5V/3.3V microcontroller GPIOs. Its R_DS(ON) remains stable across –55°C to +150°C junction temperature, and its 6pF Crss minimizes Miller-induced shoot-through risk in high-frequency switching.

The device integrates ESD protection on the gate terminal (±8V rating) and features a fully lead-free, halogen-free "Green" construction compliant with RoHS 3 and AEC-Q101 qualification readiness - supporting industrial and consumer-grade reliability requirements without derating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20V - supports input rails up to 18V with 10% margin for transients
R_DS(ON)	175mΩ @ 4.5V V_GS - limits conduction loss to ≤1.1mW at 300mA load
I_D (max)	1.6A @ 25°C - suitable for USB-powered peripherals and battery-fed subsystems
V_GS(TH)	0.45–0.95V - ensures reliable turn-on with 1.8V logic and low-power MCU outputs
C_iss/C_oss/C_rss	38pF / 10pF / 6pF @ 10V - enables clean 1MHz+ switching with minimal gate drive energy
Q_g	0.7nC - reduces gate driver power consumption and simplifies discrete gate control
R_θJA	260°C/W (FR-4, min pad) - requires no heatsink for <300mW dissipation in standard PCB layout

Pinout & Package

SOT23-3 surface-mount package with 0.915mm pitch, 2.4mm × 1.3mm footprint, and matte tin-plated copper leadframe. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Power output node	Connected to load return path; carries full switched current and dissipates I²R losses
2 (Gate)	Control input	ESD-protected MOS gate requiring ≤10µA leakage drive; sensitive to overvoltage beyond ±8V
3 (Source)	Reference node	Tied to system ground or low-side return; defines V_GS reference and body diode cathode

Key Features

Feature	Design Value
Low gate threshold voltage	0.45–0.95V enables robust turn-on with 1.8V I/O without level-shifting circuitry
Fast switching speed	8ns turn-on delay + 138ns rise time supports >1MHz PWM in compact DC-DC stages
ESD-protected gate	Integrated protection withstands ≥2kV HBM, reducing need for external TVS on control lines
Thermally optimized R_θJA	184°C/W with 1-inch² copper improves power handling by 40% vs. standard FR-4 layout
Green, RoHS 3-compliant	Halogen- and antimony-free compound meets IPC-1752a reporting and automotive supply chain mandates

Applications

USB Power Switching

Smartphone Battery Protection

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals under firmware control.

IC Role / Device Role / Timing Role: Low-side load switch controlling 5V rail with fast response to prevent bus enumeration faults.

Use Value: 175mΩ R_DS(ON) limits voltage drop to <0.8V at 4.5A peak, preserving USB 2.0 compliance.

Use Scenario: Isolating backup battery from main Li-ion cell during charging or fault conditions.

IC Role / Device Role / Timing Role: Reverse-current blocking switch activated by battery management IC GPIO.

Use Value: Body diode forward voltage of 0.8–1.2V at 1A enables passive reverse-blocking without external Schottky.

IoT Sensor Node Power Gating

Wearable Display Backlight Control

Use Scenario: Shutting down BLE radio or environmental sensors during deep-sleep mode to reduce quiescent current.

IC Role / Device Role / Timing Role: High-efficiency, low-I_Q power gate driven directly by 1.8V MCU output.

Use Value: 0.45V V_GS(TH) ensures full enhancement at 1.8V, eliminating need for charge-pump gate drivers.

Use Scenario: Modulating LED backlight brightness via PWM in ultra-thin smartwatches.

IC Role / Device Role / Timing Role: Low-R_DS(ON) switch synchronizing with 20kHz PWM dimming signal.

Use Value: 6pF Crss suppresses gate oscillation and prevents false triggering during fast edge transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016U-7	Lower R_DS(ON) (120mΩ @ 4.5V) but higher Q_g (1.1nC); same SOT23 package	Better conduction efficiency above 500mA; slower switching due to higher gate charge	Select when minimizing I²R loss dominates over switching frequency constraints
AO3400	Higher V_DSS (30V), similar R_DS(ON) (28mΩ @ 10V), but V_GS(TH) starts at 0.8V - less compatible with 1.8V logic	Supports wider input range but requires 2.5V+ drive for guaranteed turn-on	Select only if system uses ≥2.5V GPIO and needs extended voltage headroom

Compared with DMN2016U-7 and AO3400, the DMN2310U-13 delivers optimal balance of ultra-low gate threshold, moderate R_DS(ON), and minimal Crss - making it uniquely suited for 1.8V–2.5V logic-driven load switching where both turn-on certainty and switching fidelity matter.

Availability

DMN2310U-13 is available at Aetrix Electronics and suitable for USB power delivery, IoT sensor node power gating, and wearable display backlight control requiring stable component supply and consistent SOT23 tape-and-reel logistics.

Supply support for DMN2310U-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

The DMN2310U belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for space-constrained, low-voltage power management in portable and battery-operated electronics.

FAQ

What is the maximum safe operating junction temperature for DMN2310U-13?

The absolute maximum junction temperature is +150°C, and the device is characterized for stable R_DS(ON) performance across –55°C to +150°C. Thermal derating begins at +85°C ambient on standard FR-4 layouts, with R_θJA rising from 260°C/W to 320°C/W at +85°C ambient per Figure 5.

Can DMN2310U-13 be used in automotive applications?

The DMN2310U-13 is not AEC-Q101 qualified out-of-box, but Diodes offers automotive-grade variants (e.g., DMN2310UQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. Standard DMN2310U-13 is approved for industrial and consumer use only.

Does DMN2310U-13 require a gate resistor in typical load-switch configurations?

A gate resistor is recommended between 10Ω and 100Ω to dampen ringing caused by PCB trace inductance and gate capacitance interaction. While not mandatory for DC operation, it improves EMI performance and prevents unintended oscillation during fast edge transitions in PWM applications.

How does the body diode forward voltage affect reverse-current protection in load-switch designs?

The body diode V_SD is 0.8–1.2V at 1A, enabling passive reverse-current blocking when the MOSFET is off and source voltage exceeds drain. This eliminates need for external Schottky diodes in many single-supply systems, though forward voltage drop must be accounted for in low-dropout designs.

DMN2310U-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 175mOhm @ 300mA, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.7 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 38 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 480mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN2310U-13 FAQ

1.How can I place an order for DMN2310U-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN2310U-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN2310U-13 reliable?

The price and inventory of DMN2310U-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2310U-13 is usually 5 days.

3.What payment methods are accepted for DMN2310U-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2310U-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN2310U-13?

DMN2310U-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN2310U-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN2310U-13?

For technical support, including DMN2310U-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2310U-13 requirements.

6.How does Aetrix verify that DMN2310U-13 is sourced from the original manufacturer or authorized distributors?

All DMN2310U-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2310U-13 meets industry standards.

7.What is the process for return or replacement of DMN2310U-13?

All DMN2310U-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2310U-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN2310U-13 part is unused and in its original packaging.

Return procedure for DMN2310U-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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