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Diodes Incorporated DMN2310UFB4-7B
- Part No.:
- DMN2310UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN2310UFB4-7B.pdf
- Description:
- MOSFET BVDSS: 8V~24V X2-DFN1006-
- Quantity:
- Payment:
- Shipping:
Inventory:6,777
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Product details
Overview
DMN2310UFB4-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage load switching in space-constrained portable electronics. It delivers 175 mΩ RDS(ON) at VGS = 4.5 V, supports 2.1 A continuous drain current at +25°C, and operates with a gate threshold voltage as low as 0.45 V - enabling direct drive from 1.8 V/2.5 V logic in battery-powered systems.
For engineers reviewing the DMN2310UFB4-7B datasheet, DMN2310UFB4-7B pinout, DMN2310UFB4-7B application, or DMN2310UFB4-7B equivalent, key selection criteria include ultra-small X2-DFN1006-3 footprint (0.6 mm²), low-profile 0.4 mm height, ESD-protected gate, and guaranteed RDS(ON) performance down to 1.5 V gate drive.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining fast switching (tD(ON) = 8 ns, tF = 180 ns) and low gate charge (Qg = 0.7 nC at VGS = 4.5 V). Its 20 V VDSS rating targets single-cell Li-ion and USB-powered systems where overvoltage margin and robustness against transient spikes are critical.
The device integrates an intrinsic body diode with VSD = 0.8–1.2 V at IS = 300 mA and exhibits normalized RDS(ON) variation of ≤1.4× across –55°C to +150°C - supporting reliable operation in thermally dynamic environments like wearable sensors and IoT edge nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Supports input rails up to 19 V with 5% safety margin for USB PD and single-cell Li-ion applications. |
| RDS(ON) @ VGS = 4.5 V | 175 mΩ max - Enables <100 mW conduction loss at 1 A, critical for thermal management in sealed enclosures. |
| ID (continuous, TA = +25°C) | 2.1 A - Sustains full-load current in compact DC-DC output stages without external heatsinking. |
| VGS(TH) | 0.45–0.95 V - Ensures turn-on with 1.2 V logic or weak microcontroller GPIOs; eliminates need for level shifters. |
| Qg | 0.7 nC - Reduces gate drive power and enables >1 MHz switching in high-frequency load-switching topologies. |
| RθJA (min pad layout) | 177 °C/W - Defines thermal derating curve for PCB layouts with 2 oz copper and minimal thermal relief. |
| Ciss | 38 pF - Limits capacitive loading on driving circuits and minimizes shoot-through risk in half-bridge configurations. |
Pinout & Package
Package: X2-DFN1006-3 - 0.6 mm × 1.0 mm, 0.4 mm profile, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Connected to ground or low-side return path; exposed thermal pad tied to PCB ground plane for thermal dissipation. |
| Pin 2 (Gate) | Control input (G) | ESD-protected gate requiring no external clamping; driven directly by 1.5–4.5 V logic with <0.7 nC total charge. |
| Pin 3 (Drain) | Power output (D) | Switches load between input rail and downstream circuitry; handles up to 4.7 A pulsed current during inrush events. |
Key Features
| Feature | Design Value |
|---|---|
| Footprint size | 0.6 mm² - Thirteen times smaller than SOT-23, enabling placement in tight spaces behind displays or under connectors. |
| Profile height | 0.4 mm - Allows use in ultra-thin wearables and stacked PCB assemblies where Z-height is constrained. |
| Low VGS(TH) | 0.45 V min - Guarantees turn-on even with degraded battery voltage or weak pull-up conditions in sleep-mode circuits. |
| ESD protection | HBM ±2 kV - Eliminates need for external gate protection diodes in consumer-grade portable designs. |
| RoHS & Green compliance | Lead-free, halogen-free, antimony-free - Meets IPC-1752A Class 1 reporting requirements for automotive and medical supply chains. |
Applications
| Battery Protection Circuit | USB-C Power Path Control |
|---|---|
|
Use Scenario: Isolating backup battery from main system during charging or fault conditions in smartwatches and fitness trackers. IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated only when host MCU asserts gate signal. Use Value: 175 mΩ RDS(ON) limits voltage drop to <175 mV at 1 A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: Enabling/disabling power delivery from USB-C port to internal 3.3 V rail in portable diagnostic devices. IC Role / Device Role / Timing Role: High-side power switch placed between USB-C VBUS and buck converter input; controlled via PMIC GPIO. Use Value: 0.45 V VGS(TH) ensures reliable turn-on with 3.3 V logic, while 20 V VDSS withstands USB-C 20 V transients per USB PD 3.1 spec. |
| Wireless Earbud Charging Case | Industrial Sensor Node Power Gating |
|
Use Scenario: Sequencing power to Bluetooth SoC and charging IC inside compact earbud case with limited PCB area. IC Role / Device Role / Timing Role: Dual-function switch: isolates battery during charging and enables SoC power-on after lid open detection. Use Value: X2-DFN1006-3 package fits within 1.0 mm × 0.6 mm keep-out zone near hinge mechanism; 0.4 mm height avoids interference with battery cell stacking. |
Use Scenario: Powering down LoRaWAN transceiver between periodic sensor reads in battery-operated environmental monitors. IC Role / Device Role / Timing Role: Load switch disconnecting transceiver VDD rail; driven by microcontroller wake-up timer with <100 ns response. Use Value: 8 ns turn-on delay and 180 ns fall time support sub-millisecond power cycling, reducing average current to <1 µA in deep-sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(ON) = 200 mΩ @ VGS = 4.5 V; higher VGS(TH) (0.5–1.2 V); same X2-DFN1006-3 package | Marginally higher conduction loss; less suitable for 1.8 V logic drive | Select when tighter VGS(TH) distribution or lower cost is prioritized over minimum RDS(ON). |
| AO3414 | RDS(ON) = 55 mΩ @ VGS = 10 V but 220 mΩ @ VGS = 4.5 V; SOT-23 package (3.0 mm × 1.4 mm) | Requires larger PCB area and cannot be driven from 1.8 V logic without level shifter | Choose only if higher current (up to 3.8 A) at 10 V gate drive is required and board space permits SOT-23. |
Compared with DMN2310UFB4-7B, DMN2016LFG-7 trades 14% higher RDS(ON) for improved VGS(TH) consistency, while AO3414 offers lower RDS(ON) only at ≥10 V drive - making DMN2310UFB4-7B uniquely suited for miniaturized, low-voltage, logic-direct-switched applications.
Availability
DMN2310UFB4-7B is available at Aetrix Electronics and suitable for battery-powered wearables, USB-C peripheral power management, and industrial sensor node power gating requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN2310UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This device belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained, low-voltage portable electronics where board area and Z-height are primary constraints.
FAQ
What is the maximum safe operating temperature for DMN2310UFB4-7B?
The junction temperature range is –55°C to +150°C. Under continuous 2.1 A operation at +25°C ambient, thermal resistance (RθJA = 177 °C/W) limits junction temperature to ~390°C - which exceeds absolute maximum. Derating is required: at 1.0 A, TJ ≈ 177°C, so practical max ambient is +73°C for full-rated current with standard FR-4 layout.
Can DMN2310UFB4-7B be used in high-side switching configurations?
Yes - it functions as a high-side switch when the source is connected to the load and drain to the supply rail. However, gate drive must exceed the source voltage by ≥VGS(TH); for 3.3 V rail, a minimum 3.75 V gate drive is needed. No integrated charge pump is provided, so external level-shifting or gate driver IC is required for true high-side operation above logic voltage.
Does DMN2310UFB4-7B require external gate resistors for EMI control?
No external gate resistor is required for basic switching, but a 10–47 Ω series resistor is recommended to damp ringing caused by trace inductance and Ciss/Coss interaction. The 0.7 nC Qg and 38 pF Ciss make it susceptible to fast-edge-induced oscillation in layouts with >5 mm gate trace length.
Is the exposed thermal pad electrically isolated in X2-DFN1006-3?
No - the exposed pad is internally connected to the source terminal (Pin 1). It must be soldered to a PCB copper pour tied to the source net for both thermal performance and electrical integrity. Thermal vias (≥4× 0.3 mm diameter) into inner ground planes are strongly recommended to achieve the 110 °C/W RθJA rating under enhanced layout conditions.
DMN2310UFB4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 175mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 38 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 710mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN2310UFB4-7B FAQ
1.How can I place an order for DMN2310UFB4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2310UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2310UFB4-7B reliable?
The price and inventory of DMN2310UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2310UFB4-7B is usually 5 days.
3.What payment methods are accepted for DMN2310UFB4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2310UFB4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2310UFB4-7B?
DMN2310UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2310UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2310UFB4-7B?
For technical support, including DMN2310UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2310UFB4-7B requirements.
6.How does Aetrix verify that DMN2310UFB4-7B is sourced from the original manufacturer or authorized distributors?
All DMN2310UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2310UFB4-7B meets industry standards.
7.What is the process for return or replacement of DMN2310UFB4-7B?
All DMN2310UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN2310UFB4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2310UFB4-7B part is unused and in its original packaging.
Return procedure for DMN2310UFB4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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